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    Motion sensor
    74.
    发明授权
    Motion sensor 有权
    运动传感器

    公开(公告)号：US09569953B2

    公开(公告)日：2017-02-14

    申请号：US14857516

    申请日：2015-09-17

    Applicant: Greenwave Systems PTE LTD.

    Inventor： Eric Scott Micko

    IPC: G01B11/00 ,  G08B29/18 ,  G08B13/191 ,  G01J5/00 ,  G01J5/34 ,  G08B13/19 ,  G08B13/193 ,  G01J5/02 ,  G01J5/08

    CPC classification number: G08B29/185 ,  G01B11/00 ,  G01J5/0022 ,  G01J5/0025 ,  G01J5/02 ,  G01J5/0806 ,  G01J5/0809 ,  G01J5/0831 ,  G01J5/34 ,  G01J2005/345 ,  G08B13/19 ,  G08B13/191 ,  G08B13/193

    Abstract: A motion sensor includes an infrared detector with a first set of detector elements and a second set of detector elements. The motion sensor also includes an optical system to direct electromagnetic energy from a first set of monitored volumes spaced at a pitch in a first direction onto the first set of detector elements and to direct electromagnetic energy from a second set of monitored volumes spaced at the pitch in the first direction onto the second set of detector elements. The second set of monitored volumes have an offset from the first set of monitored volumes in the first direction.

    Abstract translation: 运动传感器包括具有第一组检测器元件的红外检测器和第二组检测器元件。 运动传感器还包括一个光学系统，用于将第一组监测体积的电磁能量以第一方向上的间距向第一组方向引导到第一组检测器元件上，并将来自第二组监测体积的电磁能量引导到间距 在第一方向上到第二组检测器元件。 第二组监视卷与第一个方向上的第一组监视卷具有偏移。

    SENSOR NOISE SUPPRESSION
    75.
    发明申请
    SENSOR NOISE SUPPRESSION 审中-公开
    传感器噪声抑制

    公开(公告)号：US20160265975A1

    公开(公告)日：2016-09-15

    申请号：US15066198

    申请日：2016-03-10

    Applicant: PHILIPS LIGHTING HOLDING B.V.

    Inventor： PETRUS ANTONIUS VERBEEK ,  ROGER PETER ANNA DELNOIJ ,  JOHANNES MARTINUS MARIA HENSING ,  MICHEL ALBERTUS THEODORUS KLEIN SWORMINK ,  MICHIEL ADRIAANSZOON KLOMPENHOUWER ,  MAREK ZBIGNIEW SZCZERBA

    IPC: G01J5/00 ,  G01J5/34

    CPC classification number: G01J5/0022 ,  G01J5/34 ,  G01J2005/345 ,  G08B13/191 ,  G08B29/18

    Abstract: A passive infrared sensor system comprising: a direct current (DC) voltage source supplying a DC voltage; a passive infrared sensor supplied with the DC voltage, the passive infrared sensor comprising at least one sensor element; an alternating current (AC) voltage source supplying an AC voltage, the AC voltage source arranged to induce an alternating current to flow through said at least one sensor element; an amplifier arranged to amplify an output signal that is output from the passive infrared sensor to generate an amplified output signal; and a filter arranged to filter the amplified output signal to provide an output of the passive infrared sensor system, wherein the filter is configured to filter a frequency of the AC voltage.

    Abstract translation: 一种被动红外传感器系统，包括：提供直流电压的直流（DC）电压源; 提供有直流电压的被动红外传感器，被动红外传感器包括至少一个传感器元件; 提供交流电压的交流电压源（AC），所述交流电压源被布置成引起交流电流流过所述至少一个传感器元件; 放大器，放大从被动红外线传感器输出的输出信号，以产生放大的输出信号; 以及滤波器，其布置成对放大的输出信号进行滤波以提供无源红外传感器系统的输出，其中，滤波器被配置为滤波AC电压的频率。

    METHOD FOR PRODUCING A MICROSYSTEM HAVING PIXELS
    76.
    发明申请
    METHOD FOR PRODUCING A MICROSYSTEM HAVING PIXELS 有权
    用于生产具有像素的微结构的方法

    公开(公告)号：US20160149071A1

    公开(公告)日：2016-05-26

    申请号：US15011812

    申请日：2016-02-01

    Applicant: Pyreos Ltd.

    Inventor： Carsten GIEBELER ,  Neil CONWAY

    IPC: H01L31/18

    CPC classification number: H01L31/1884 ,  G01J1/44 ,  G01J5/023 ,  G01J5/024 ,  G01J5/046 ,  G01J5/34 ,  G01J2005/345 ,  H01L37/02 ,  H01L37/025 ,  H01L41/316

    Abstract: A Method for producing a microsystem (1) with pixels includes: producing a thermal silicon oxide layer on the surface of a silicon wafer as a base layer (5) by oxidation of the silicon wafer; producing a silicon oxide thin layer on the base layer as a carrier layer (6)by thermal deposition; producing a platinum layer on the carrier layer by thermal deposition, whereby an intermediate product is produced; cooling the intermediate product to room temperature; pixel-like structuring of the platinum layer by removing surplus areas of the platinum layer, whereby bottom electrodes (8, 12) of the pixels (7, 8) are formed in pixel shape on the carrier layer in remaining areas; removing material on the side of the silicon wafer facing away from the base layer, so a frame (3) remains and a membrane (4) formed by the base layer and the carrier layer is spanned by the frame.

    Abstract translation: 一种用于制造具有像素的微系统（1）的方法包括：通过硅晶片的氧化在硅晶片的表面上形成作为基底层（5）的热氧化硅层; 通过热沉积在基底层上形成作为载体层（6）的氧化硅薄层; 通过热沉积在载体层上产生铂层，由此产生中间产物; 将中间产物冷却至室温; 通过去除铂层的剩余区域来形成铂层的像素结构，由此像素（7,8）的底部电极（8,12）以剩余区域中的载体层上的像素形状形成; 去除硅晶片背离基底层的材料，因此保留框架（3），并且由基底层和载体层形成的膜（4）被框架横跨。

    COMPACT HUMAN PRESENCE DETECTOR
    77.
    发明申请
    COMPACT HUMAN PRESENCE DETECTOR 审中-公开
    紧凑人体检测器

    公开(公告)号：US20160073042A1

    公开(公告)日：2016-03-10

    申请号：US14889649

    申请日：2014-05-05

    Applicant: IRLYNX

    Inventor： Pierre CAMBOU

    IPC: H04N5/33 ,  H04N5/374 ,  G01J5/34 ,  G02B3/08 ,  G01J5/00 ,  G01J5/08

    CPC classification number: H04N5/33 ,  G01J5/0025 ,  G01J5/0806 ,  G01J5/0846 ,  G01J5/34 ,  G01J2005/0077 ,  G01J2005/345 ,  G02B3/08 ,  G08B13/191 ,  G08B13/193 ,  G08B29/183 ,  H01L37/02 ,  H01L37/025 ,  H04N5/374

    Abstract: A multimodal and highly compact human presence detector that includes, on a same silicon chip made using CMOS technology, a first array of pixels, made sensitive to far-infrared radiation by depositing a pyroelectric layer, converting the received far-infrared radiation into electrical charges, juxtaposed with at least one second array of pixels sensitive to visible light, converting the received visible light into electrical charges, and a circuit for reading the charges generated in each of the arrays by the visible light or the far-infrared radiation, the detector further including, on top of the silicon chip, an optical element for focusing the far-infrared radiation on the first array, and an optical element for focusing the visible light on the second array.

    Abstract translation: 一种多模态和高度紧凑的人类存在检测器，其包括在使用CMOS技术制造的相同硅芯片上的第一阵列像素，通过沉积热电层对远红外辐射敏感，将接收到的远红外辐射转换成电荷 与可见光敏感的至少一个第二像素阵列并置，将接收到的可见光转换成电荷，以及用于通过可见光或远红外辐射读取每个阵列中产生的电荷的电路，检测器 还包括在所述硅芯片的顶部上用于将所述远红外辐射聚焦在所述第一阵列上的光学元件和用于将所述可见光聚焦在所述第二阵列上的光学元件。

    Detection circuit, sensor device and electronic apparatus
    78.
    发明授权
    Detection circuit, sensor device and electronic apparatus 有权
    检测电路，传感器和电子设备

    公开(公告)号：US09222839B2

    公开(公告)日：2015-12-29

    申请号：US14725144

    申请日：2015-05-29

    Applicant: SEIKO EPSON CORPORATION

    Inventor： Mitsuhiro Yamamura

    IPC: G01J5/34 ,  G01J5/22

    CPC classification number: G01J5/34 ,  G01J5/22 ,  G01J2005/345

    Abstract: A detection circuit includes a pyroelectric element, an amplifier circuit, a first switching element and a second switching element. The amplifier circuit includes a transistor in which a detection signal from the pyroelectric element is inputted to a gate. The first switching element interrupts an electric current that flows into the transistor. The second switching element interrupts a connection between the pyroelectric element and the gate of the transistor.

    Abstract translation: 检测电路包括热电元件，放大器电路，第一开关元件和第二开关元件。 放大器电路包括其中来自热电元件的检测信号被输入到栅极的晶体管。 第一开关元件中断流入晶体管的电流。 第二开关元件中断热电元件和晶体管的栅极之间的连接。

    THERMOELECTRIC CONVERSION ELEMENT, LIGHT DETECTION DEVICE, ELECTRONIC APPARATUS
    79.
    发明申请
    THERMOELECTRIC CONVERSION ELEMENT, LIGHT DETECTION DEVICE, ELECTRONIC APPARATUS 有权
    热电转换元件，光检测装置，电子装置

    公开(公告)号：US20150276493A1

    公开(公告)日：2015-10-01

    申请号：US14662899

    申请日：2015-03-19

    Applicant: SEIKO EPSON CORPORATION

    Inventor： Yasushi TSUCHIYA ,  Takayuki YONEMURA

    IPC: G01J5/34 ,  G01J5/12

    CPC classification number: G01J5/34 ,  G01J5/12 ,  G01J2005/123 ,  G01J2005/345

    Abstract: A thermoelectric conversion element includes a pair of electrodes and a pyroelectric material, which is a ferroelectric layer, sandwiched between the pair of electrodes. The pyroelectric material includes at least Bi (bismuth), La (lanthanum), and Fe (iron). The molar fraction of La in a Bi/La site in the crystal structure of the pyroelectric material is 0.15 or more and 0.20 or less. Such a thermoelectric conversion element, and a light detection device and electronic apparatus which include the thermoelectric conversion element have a good pyroelectric function without including Pb (lead).

    Abstract translation: 热电转换元件包括夹在该对电极之间的作为铁电体层的一对电极和热电材料。 热电材料至少包括Bi（铋），La（镧）和Fe（铁）。 热电材料的晶体结构中的Bi / La部位的La的摩尔分数为0.15以上且0.20以下。 这种热电转换元件以及包括热电转换元件的光检测装置和电子设备在不包含Pb（铅）的情况下具有良好的热电功能。

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