Abstract:
In a plasma processing apparatus that forms plasma from a process gas by supplying the process gas into a processing container and applying high-frequency power to an electrode provided inside the processing container on which a workpiece is placed and executes specific plasma processing on the processing surface of the workpiece, apparatus state parameter data indicating a state of the plasma processing apparatus are obtained through measurement executed by a parameter measuring instrument, optical data are obtained through measurement executed by an optical measuring instrument and electrical data are obtained through measurement executed by an electrical measuring instrument. A means for plasma leak judgment judges that a plasma leak has occurred if there is a fluctuation in the data.
Abstract:
A dual illumination system is disclosed for use with an imaging apparatus. The imaging apparatus defines a light-tight imaging compartment with an interior wall having a view port extending into the imaging compartment. This view port enables data acquisition of a biological specimen contained in the imaging compartment. The dual illumination system includes a first illumination assembly configured to direct structured light onto a first side of the specimen to enable structured light and surface topography measurements thereof. A second illumination assembly then directs light at the specimen wherein diffused fluorescent light emanates from a surface thereof for receipt through the view port to acquire fluorescence data of the specimen. The combination of structured light imaging and fluorescence imaging enables 3D diffuse tomographic reconstructions of fluorescent probe location and concentration.
Abstract:
A method for improving the measurement of semiconductor wafers is disclosed. In the past, the repeatability of measurements was adversely affected due to the unpredictable growth of a layer of contamination over the intentionally deposited dielectric layers. Repeatability can be enhanced by removing this contamination layer prior to measurement. This contamination layer can be effectively removed in a non-destructive fashion by subjecting the wafer to a cleaning step. In one embodiment, the cleaning is performed by exposing the wafer to microwave radiation. Alternatively, the wafer can be cleaned with a radiant heat source. These two cleaning modalities can be used alone or in combination with each other or in combination with other cleaning modalities. The cleaning step may be carried out in air, an inert atmosphere or a vacuum. Once the cleaning has been performed, the wafer can be measured using any number of known optical measurement systems.
Abstract:
A system and method for detecting chamber leakage by measuring the reflectivity of an oxidized thin film. In a preferred embodiment, a method of detecting leaks in a chamber includes providing a first monitor workpiece, placing the first monitor workpiece in the chamber, and forming at least one film on the first monitor workpiece. The reflectivity of the least one film of the first monitor workpiece is measured, wherein the reflectivity indicates whether there are leaks in the at least one seal of the chamber. In another embodiment, the method includes providing a second monitor workpiece, placing the second monitor workpiece in the chamber, and forming at least one film on the second monitor workpiece. The reflectivity of the at least one film of the second monitor workpiece is measured, and the second monitor workpiece film reflectivity is compared to the first monitor workpiece film reflectivity.
Abstract:
A macroscopic fluorescence illumination assembly is provided for use with an imaging apparatus with a light-tight imaging compartment. The imaging apparatus includes an interior wall defining a view port extending into the imaging compartment to enable viewing of a specimen contained therein. The illumination assembly includes a specimen support surface sized and dimensioned for receipt in the imaging compartment, and oriented to face toward the view port of the imaging apparatus. The support surface is substantially opaque and defines a window portion that enables the passage of light there through. The window portion is selectively sized and dimensioned such that the specimen, when supported atop the support surface, can be positioned and seated over the window portion in a manner forming a light-tight seal substantially there between. The illumination assembly further includes an excitation light source, and a bundle of fiber optic strands having proximal ends thereof in optical communication with the light source. The distal ends of the strands terminate proximate the window portion of the support surface. The distal ends each emit a respective beam of light originating from the light source which are then collectively directed toward the window portion and into a bottom side of the specimen wherein the diffused light passes there through and exits a topside thereof for receipt through the view port to view the fluorescence of the specimen.
Abstract:
A method for improving the measurement of semiconductor wafers is disclosed. In the past, the repeatability of measurements was adversely affected due to the unpredictable growth of a layer of contamination over the intentionally deposited dielectric layers. Repeatability can be enhanced by removing this contamination layer prior to measurement. This contamination layer can be effectively removed in a non-destructive fashion by subjecting the wafer to a cleaning step. In one embodiment, the cleaning is performed by exposing the wafer to microwave radiation. Alternatively, the wafer can be cleaned with a radiant heat source. These two cleaning modalities can be used alone or in combination with each other or in combination with other cleaning modalities. The cleaning step may be carried out in air, an inert atmosphere or a vacuum. Once the cleaning has been performed, the wafer can be measured using any number of known optical measurement systems.
Abstract:
Increasing signal to noise ratio in optical spectra obtained by spectrophotometers. An interferometer introduces interference effects into a source light beam. A dual beam configuration splits the source beam having the interference effects into a reference beam and a sample beam. The reference beam interacts with a reference substance and is detected by a reference detector. The sample beam interacts with a sample substance and is detected by a sample detector. An optical spectra of the sample is based on the difference between the detected reference beam and the detected sample beam.
Abstract:
In this way, plumes of oil and gas in the oceanic water column can be detected from a substantial distance using a highly sensitive sensor (2) and then characterized thoroughly using a less sensitive sensor (3).
Abstract:
A system and method for leak testing a plurality of hermetic electronic devices of the type that have an internai chamber that is isolated from ambient conditions by a seal structure is advantageously designed to be able to calculate the leak rate of each individual device in a marner that is independent of structural manufacturing variances that typically exist within a sampling of such devices. The method preferably involves positioning a plurality of the hermetic electronic devices within a test area, and then stimulating the hermetic electronic devices with a modulated input of energy, such as by varying the ambient pressure about the devices. A property such as the physical position of one portion of a lid of each of the hermetic electronic devices is then sensed. The sensed property is one that is known to change as a first function of the modulated input of energy and also as a second function of pressure conditions within the hermetically sealed internal chamber. The first and second functions are linearly independent of each other. By comparing the stimulation of the devices to the sensed property and by discriminating using the two known functions a leak rate is determined for each individual device that is substantially independent of variances, such as differences in lid thickness that may exist between the different devices. Accordingly, an accurate determination of leak rate may be made with a minimum of calibration.