公开(公告)号：US3273005A

公开(公告)日：1966-09-13

申请号：US26935263

申请日：1963-04-01

Applicant: GEN ELECTRIC

Inventor： LAFFERTY JAMES M

IPC: H01J1/148

CPC classification number: H01J1/148

公开(公告)号：JP2014102929A

公开(公告)日：2014-06-05

申请号：JP2012253120

申请日：2012-11-19

Applicant: Nuflare Technology Inc ,  株式会社ニューフレアテクノロジー

Inventor： KOBAYASHI YOSHIE

IPC: H01J37/06 ,  H01J9/02

CPC classification number: H01J1/148 ,  H01J9/04 ,  H01J37/065 ,  H01J2237/06308 ,  H01J2237/26 ,  H01J2237/31754

Abstract: PROBLEM TO BE SOLVED: To provide a cathode capable of suppressing an electric field at a cathode tip from being formed ununiformly, and a method for manufacturing a cathode.SOLUTION: A cathode of the present embodiment includes: a body having an electron emission surface at the upper end thereof; and a coating layer covering the body while the electron emission surface is exposed and having a groove between the electron emission surface and the coating layer. The width of the groove is 1 μm or more and 10 μm or less, and the difference between the maximum and the minimum of the width of the groove around the electron emission surface is 1 μm or less.

Abstract translation: 要解决的问题：提供能够抑制阴极尖端的电场不均匀形成的阴极及其制造方法。本实施方式的阴极包括：具有电子发射面的主体， 其上端; 以及在电子发射表面暴露并且在电子发射表面和涂层之间具有凹槽的同时覆盖主体的涂层。 槽的宽度为1μm以上且10μm以下，电子发射面周围的槽的宽度的最大值与最小值的差为1μm以下。

公开(公告)号：JP2010177029A

公开(公告)日：2010-08-12

申请号：JP2009018202

申请日：2009-01-29

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： AOKI NAOFUMI ,  KOBAYASHI TAMAKI

IPC: H01J9/02

CPC classification number: C23C14/067 ,  C23C14/35 ,  C23C14/54 ,  H01J1/148 ,  H01J9/042 ,  H01J9/148

Abstract: PROBLEM TO BE SOLVED: To manufacture a lanthanum boride film having good crystallinity by improving variation of film quality in a sputtering method, to form a lanthanum boride film having uniform film quality (crystallinity) on a substrate having a large area, and to provide a method of manufacturing an electron emitting element excellent in electron emitting characteristics (stability of electron emission in particular). SOLUTION: In a process to deposit the lanthanum boride film on the substrate by means of the sputtering method while relatively moving the substrate and a target of lanthanum boride with the substrate and the target of lanthanum boride disposed face to face, when the mean free path of sputtering gas molecules during deposition is λ(mm), and a distance between the substrate and the target is L(mm), L/λ is set to be not less than 20, and a value obtained by dividing a discharge power value by the area of the target is set to be 1-5 W/cm 2 . COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 待解决的问题：为了通过改善溅射方法中的膜质量的变化来制造具有良好结晶度的硼酸镧膜，以在具有大面积的基板上形成具有均匀膜质量（结晶度）的硼化镧膜，以及 提供一种制造电子发射特性（特别是电子发射的稳定性）优异的电子发射元件的方法。 解决方案：在通过溅射法在衬底上沉积硼硅酸镧膜的方法中，同时相对移动衬底和硼化镧靶与基底和硼化镧靶相对设置，当 沉积期间溅射气体分子的平均自由程为λ（mm），基板与目标之间的距离为L（mm），L /λ设定为不小于20，通过将放电 按目标区域的功率值设置为1-5W / cm 2 。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2005228741A

公开(公告)日：2005-08-25

申请号：JP2005018549

申请日：2005-01-26

Applicant: Nuflare Technology Inc ,  株式会社ニューフレアテクノロジー

Inventor： KATSAP VICTOR

IPC: H01J1/14 ,  H01J1/148 ,  H01J1/15 ,  H01J1/16 ,  H01J9/04 ,  H01J37/06

CPC classification number: H01J9/042 ,  H01J1/148 ,  H01J1/15 ,  H01J2201/19 ,  H01J2237/06308

Abstract: PROBLEM TO BE SOLVED: To elongate life of and improve electrooptic performance of a thermionic cathode for a device using electron beams such as a lithography device, a scanning electron microscope (SEM), and a transmission electron microscope (TEM). SOLUTION: The thermionic cathode of an improved type is provided with a conical part with its outside face covered with a carbon film having a comparatively small conical angle of not more than 60°, and has large angular intensity and brightness of emitted electron beams and a long life. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了延长使用诸如光刻装置，扫描电子显微镜（SEM）和透射电子显微镜（TEM）的电子束的装置的热离子阴极的寿命并提高电离性能。 解决方案：改进型的热离子阴极设置有圆锥形部分，其外表面覆盖有不大于60°的较小锥角的碳膜，并且具有大的角度强度和发射电子的亮度 梁和寿命长。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：KR1020170138796A

公开(公告)日：2017-12-18

申请号：KR1020160071079

申请日：2016-06-08

Applicant: 국방과학연구소

Inventor： 이성 ,  신진우 ,  홍용준 ,  소준호 ,  이성호

IPC: H01J9/04

CPC classification number: H01J1/148 ,  H01J9/04

Abstract: 제안기술은열음극재제조방법에관한것으로, 더욱상세하게는균질한미세조직을가지면서도근사정형제어가가능한사출성형공정을활용하여, 열전자방출특성이향상되며제조가용이한열음극재제조방법에관한발명이다.

Abstract translation: 提出的技术是热阴极作为材料的制造方法，并且更具体地，同时具有通过利用近似整形控制的注射成型过程中，提高热电子发射特性的均匀的显微结构是与热阴极材料制造方法，容易制造 本发明。

公开(公告)号：KR1020140044259A

公开(公告)日：2014-04-14

申请号：KR1020130067877

申请日：2013-06-13

Applicant: 가부시키가이샤 뉴플레어 테크놀로지

Inventor： 카차프빅터

IPC: H01J1/13 ,  H01J9/04

CPC classification number: H01J1/14 ,  H01J1/148 ,  H01J9/04 ,  H01J37/065 ,  H01J2237/06308

Abstract: An improved cathode comprises a cone-shaped emitter with a carbon-based coating applied to the emitter cone surface, in which there is a narrow annular gap between the emitter body and the carbon coating. The gap prevents direct contact between the carbon coating and the crystalline emitting material, thereby preventing damaging interactions and extending the service life of the cathode.

Abstract translation: 改进的阴极包括锥形发射器，其具有施加到发射体锥表面的碳基涂层，其中在发射体和碳涂层之间存在窄的环形间隙。 间隙防止碳涂层和结晶发射材料之间的直接接触，从而防止损坏的相互作用并延长阴极的使用寿命。