公开(公告)号：US06933665B2

公开(公告)日：2005-08-23

申请号：US10193016

申请日：2002-07-09

Applicant: Terry L. Gilton ,  Paul A. Morgan

Inventor： Terry L. Gilton ,  Paul A. Morgan

IPC: H01J1/05 ,  H01J1/14 ,  H01J1/304 ,  H01J1/38 ,  H01J1/48 ,  H01J9/02 ,  H01J9/38 ,  H01J19/06 ,  H01L21/00

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2329/00

Abstract: Improved methods and structures are provided for an array of vertical geometries which may be used as emitter tips, as a self aligned gate structure surrounding field emitter tips, or as part of a flat panel display. The present invention offers controlled size in emitter tip formation under a more streamlined process. The present invention further provides a more efficient method to control the gate to emitter tip proximity in field emission devices. The novel method of the present invention includes implanting a dopant in a patterned manner into the silicon substrate and anodizing the silicon substrate in a controlled manner causing a more heavily doped region in the silicon substrate to form a porous silicon region.

Abstract translation: 提供了用于垂直几何阵列的改进的方法和结构，其可以用作发射器尖端，作为围绕场发射器尖端的自对准栅极结构，或者作为平板显示器的一部分。 本发明在更简化的过程中提供了在发射极尖端形成中的受控尺寸。 本发明还提供了一种更有效的方法来控制场致发射器件中的栅极与发射极尖端的接近。 本发明的新颖方法包括以图案化的方式将掺杂剂注入到硅衬底中并以受控的方式对硅衬底进行阳极氧化，从而在硅衬底中形成更重掺杂的区域以形成多孔硅区域。

公开(公告)号：US20050040752A1

公开(公告)日：2005-02-24

申请号：US10949524

申请日：2004-09-27

Applicant: Hang-woo Lee ,  Sang-jin Lee ,  Shang-hyeun Park

Inventor： Hang-woo Lee ,  Sang-jin Lee ,  Shang-hyeun Park

IPC: H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J1/02 ,  H01J1/00 ,  H01J9/04 ,  H01J9/12 ,  H01J21/10

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  Y10S977/952

Abstract: A field emission display device and a method of fabricating the same are provided. The field emission display device includes a substrate, a transparent cathode layer, an insulation layer, a gate electrode, a resistance layer, and carbon nanotubes. The transparent cathode layer is deposited on the substrate. The insulation layer is formed on the cathode layer and has a well exposing the cathode layer. The gate electrode is formed on the insulation layer and has an opening corresponding to the well. The resistance layer is formed to surround the surface of the gate electrode and the inner walls of the opening and the well so as to block ultraviolet rays. The carbon nanotube field emitting source is positioned on the exposed cathode layer. An alignment error between the gate electrode and the cathode is removed, and carbon nanotube paste is prevented from remaining during development, thereby preventing current leakage and short circuit between the electrodes and diode emission. Accordingly, the performance of the field emission display device can be improved.

Abstract translation: 提供场发射显示装置及其制造方法。 场发射显示装置包括基板，透明阴极层，绝缘层，栅电极，电阻层和碳纳米管。 透明阴极层沉积在衬底上。 绝缘层形成在阴极层上并具有使阴极层暴露的良好状态。 栅电极形成在绝缘层上并且具有对应于阱的开口。 电阻层形成为围绕栅电极的表面和开口和阱的内壁，以阻挡紫外线。 碳纳米管场发射源位于暴露的阴极层上。 除去栅电极和阴极之间的对准误差，并且防止在显影期间保留碳纳米管糊，从而防止电极之间的电流泄漏和短路以及二极管发射。 因此，可以提高场发射显示装置的性能。

公开(公告)号：US20040245910A1

公开(公告)日：2004-12-09

申请号：US10754176

申请日：2004-01-09

Applicant: Electrovac Fabrikation Elektrotechnischer Spezialartikel GmbH ,  LG.Philips Displays Netherlands B.V.

Inventor： Xinhe Tang ,  Ernst Hammel ,  Daniel Den Engelsen ,  Edward Cosman ,  Cornelis Kortekaas

IPC: H01J001/62

CPC classification number: H01J9/247 ,  H01J9/025 ,  H01J9/241 ,  H01J63/06 ,  H01J2201/30403 ,  H01J2201/30469

Abstract: A field emission device for use as a backlight of a liquid crystal display comprises a conductive anode having a light-emitting layer and a cathode separated from the anode by a spacer. The cathode comprises nanofiber electron emitters. For example, the nanofiber electron emitters comprise a substrate, a conductive film adhered to the substrate and a plurality of isolated, hemispheroidal nanofiber clusters that are capable of emitting electrons at high current density and low field strength.

Abstract translation: 用作液晶显示器的背光源的场致发射器件包括具有发光层的导电阳极和通过间隔件从阳极分离的阴极。 阴极包括纳米纤维电子发射体。 例如，纳米纤维电子发射体包括基底，粘附到基底的导电膜和能够以高电流密度和低场强发射电子的多个分离的半球状纳米纤维簇。

公开(公告)号：US06825596B1

公开(公告)日：2004-11-30

申请号：US08609354

申请日：1996-03-01

Applicant: David A. Cathey

Inventor： David A. Cathey

IPC: H01J116

CPC classification number: H01J1/3044 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  Y10S148/116 ,  Y10S148/172 ,  Y10S438/978

Abstract: Electron emitters and a method of fabricating emitters which have a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters, and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.

Abstract translation: 电子发射体和制造具有杂质浓度梯度的发射体的方法，使得最高浓度的杂质位于发射体的顶点，朝向发射体的基底减小。 该方法包括掺杂，图案化，蚀刻和氧化衬底的步骤，从而形成具有杂质梯度的发射体。

公开(公告)号：US06812480B2

公开(公告)日：2004-11-02

申请号：US10347622

申请日：2003-01-22

Applicant: Hang-woo Lee ,  Sang-jin Lee ,  Shang-hyeun Park

Inventor： Hang-woo Lee ,  Sang-jin Lee ,  Shang-hyeun Park

IPC: H01L2100

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  Y10S977/952

Abstract: A field emission display device and a method of fabricating the same are provided. The field emission display device includes a substrate, a transparent cathode layer, an insulation layer, a gate electrode, a resistance layer, and carbon nanotubes. The transparent cathode layer is deposited on the substrate. The insulation layer is formed on the cathode layer and has a well exposing the cathode layer. The gate electrode is formed on the insulation layer and has an opening corresponding to the well. The resistance layer is formed to surround the surface of the gate electrode and the inner walls of the opening and the well so as to block ultraviolet rays. The carbon nanotube field emitting source is positioned on the exposed cathode layer. An alignment error between the gate electrode and the cathode is removed, and carbon nanotube paste is prevented from remaining during development, thereby preventing current leakage and short circuit between the electrodes and diode emission. Accordingly, the performance of the field emission display device can be improved.

Abstract translation: 提供场发射显示装置及其制造方法。 场发射显示装置包括基板，透明阴极层，绝缘层，栅电极，电阻层和碳纳米管。 透明阴极层沉积在衬底上。 绝缘层形成在阴极层上并具有使阴极层暴露的良好状态。 栅电极形成在绝缘层上并且具有对应于阱的开口。 电阻层形成为围绕栅电极的表面和开口和阱的内壁，以阻挡紫外线。 碳纳米管场发射源位于暴露的阴极层上。 除去栅电极和阴极之间的对准误差，并且防止在显影期间保留碳纳米管糊，从而防止电极之间的电流泄漏和短路以及二极管发射。 因此，可以提高场发射显示装置的性能。

公开(公告)号：US06741025B2

公开(公告)日：2004-05-25

申请号：US09555559

申请日：2000-05-31

Applicant: Richard Allan Tuck ,  Hugh Edward Bishop

Inventor： Richard Allan Tuck ,  Hugh Edward Bishop

IPC: H01J162

CPC classification number: H01J1/304 ,  H01J2201/30403

Abstract: A field electron emission material is formed by coating a substrate (221, 230) having an electrically conductive surface with a plurality of electrically conductive particles (223, 231). Each particle has a layer of electrically insulating material (222, 232) disposed either in a first location between the conductive surface of the substrate (221) and the particle (223), or in a second location between the particle (231) and the environment (237) in which the field electron emission material is disposed, but not in both of such first and second locations, so that at least some of the particles (223, 231) form electron emission sites at such first or second locations. A number of field emission devices are disclosed, utilizing such electron emission material.

Abstract translation: 通过用具有多个导电颗粒（223,231）的具有导电表面的衬底（221,230）涂覆来形成场致电子发射材料。 每个颗粒具有设置在基板（221）的导电表面和颗粒（223）之间的第一位置中的电绝缘材料层（222,232），或者位于颗粒（231）和颗粒 （237），其中场电子发射材料被设置，但不在这两个第一和第二位置，使得至少一些颗粒（223,231）在这样的第一或第二位置处形成电子发射位点。 公开了利用这种电子发射材料的多个场致发射器件。

公开(公告)号：US20040025732A1

公开(公告)日：2004-02-12

申请号：US10333535

申请日：2003-01-21

Inventor： Richard Allan Tuck ,  Adrian Paul Burden ,  Christopher Hood ,  Warren Lee ,  Michael Stuart Waite ,  Mohan Edirisinghe

IPC: B41C001/00 ,  B41M001/00

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: To create a field electron emission material, there is printed upon a substrate (1501) an ink (1503) comprising a major component of fluid vehicle; a first minor component of electrically insulating material, either on its own or provided within a precursor therefor; and a second minor component of electrically conductive particles (1504). The printed ink is then treated to expel the major component and create the field electron emission material from the minor components on the substrate. The electrically conductive particles may be omitted, to print a solid, electrically insulating layer in a field emission device.

Abstract translation: 为了产生场致电子发射材料，在衬底（1501）上印刷包括流体载体的主要组分的油墨（1503）; 电绝缘材料的第一次要组分，其本身或在其前体内提供; 和导电颗粒（1504）的第二次要组分。 然后处理印刷油墨以排出主要组分并从底物上的次要组分产生场电子发射材料。 可以省略导电颗粒，以在场致发射器件中印刷固体电绝缘层。

公开(公告)号：US20030137236A1

公开(公告)日：2003-07-24

申请号：US09555559

申请日：2000-05-31

Inventor： RICHARD ALLAN TUCK ,  HUGH EDWARD BISHOP

IPC: H01J001/62

CPC classification number: H01J1/304 ,  H01J2201/30403

Abstract: A field electron emission material is formed by coating a substrate (221, 230) having an electrically conductive surface with a plurality of electrically conductive particles (223, 231). Each particle has a layer of electrically insulating material (222, 232) disposed either in a first location between the disposed either in a first location between the conductive surface of the substrate (221) and the particle (223), or in a second location between the particle (231) and the environment (237) in which the field electron emission material is disposed, but not in both of such first and second locations, so that at least some of the particles (223, 231) form electron emission sites at such first or second locations. A number of field emission devices are disclosed, utilising such electron emission material.

Abstract translation: 通过用具有多个导电颗粒（223,231）的具有导电表面的衬底（221,230）涂覆来形成场致电子发射材料。 每个颗粒具有一层电绝缘材料（222,232），其设置在位于基板（221）的导电表面和颗粒（223）之间的第一位置之间的第一位置，或者位于第二位置 在颗粒（231）和其中设置场致电子发射材料的环境（237）之间但不在这两个第一和第二位置之间，使得至少一些颗粒（223,231）形成电子发射位点 在这样的第一或第二位置。 公开了利用这种电子发射材料的多个场致发射器件。

公开(公告)号：US20020096684A1

公开(公告)日：2002-07-25

申请号：US10092887

申请日：2002-03-07

Inventor： George R. Brandes ,  Chris S. Christos ,  Xueping Xu

IPC: H01L031/0312

CPC classification number: H01L28/20 ,  H01J1/3042 ,  H01J2201/30403 ,  H01J2201/319 ,  H01J2329/00 ,  H01L31/03765 ,  Y02E10/548

Abstract: Amorphous silicon carbide thin film structures, including: protective coatings for windows in infrared process stream monitoring systems and sensor domes, heated windows, electromagnetic interference shielding members and integrated micromachined sensors; high-temperature sensors and circuits; and diffusion barrier layers in VLSI circuits. The amorphous silicon carbide thin film structures are readily formed, e.g., by sputtering at low temperatures.

Abstract translation: 无定形碳化硅薄膜结构，包括：红外线工艺流监测系统和传感器圆顶中的窗户保护涂层，加热窗，电磁干扰屏蔽构件和集成微机械传感器; 高温传感器和电路; 和VLSI电路中的扩散阻挡层。 非晶碳化硅薄膜结构容易形成，例如通过在低温下溅射。

公开(公告)号：US06417016B1

公开(公告)日：2002-07-09

申请号：US09261477

申请日：1999-02-26

Applicant: Terry L. Gilton ,  Paul A. Morgan

Inventor： Terry L. Gilton ,  Paul A. Morgan

IPC: H01J902

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2329/00

Abstract: Improved methods and structures are provided for an array of vertical geometries which may be used as emitter tips, as a self aligned gate structure surrounding field emitter tips, or as part of a flat panel display. The present invention offers controlled size in emitter tip formation under a more streamlined process. The present invention further provides a more efficient method to control the gate to emitter tip proximity in field emission devices. The novel method of the present invention includes implanting a dopant in a patterned manner into the silicon substrate and anodizing the silicon substrate in a controlled manner causing a more heavily doped region in the silicon substrate to form a porous silicon region. Controlling the anodization of the silicon substrate further regulates and defines the shape to less heavily doped regions in the silicon substrate which form vertical geometries that can be used as emitter tips. One method of the present invention provides a self-aligned gate structure around emitter tips. Another method includes forming a field emission device. The present invention includes a novel field emitter array, a self aligned gate structure, a field emission device, and a display device all formed according to the methods provided in this application.

Abstract translation: 提供了用于垂直几何阵列的改进的方法和结构，其可以用作发射器尖端，作为围绕场发射器尖端的自对准栅极结构，或者作为平板显示器的一部分。 本发明在更简化的过程中提供了在发射极尖端形成中的受控尺寸。 本发明还提供了一种更有效的方法来控制场致发射器件中的栅极与发射极尖端的接近。 本发明的新颖方法包括以图案化的方式将掺杂剂注入到硅衬底中并以受控的方式对硅衬底进行阳极氧化，从而在硅衬底中形成更重掺杂的区域以形成多孔硅区域。 控制硅衬底的阳极化进一步调节并限定了形成到硅衬底中的较低重掺杂区域的形状，其形成可用作发射极尖端的垂直几何形状。 本发明的一种方法提供围绕发射器尖端的自对准栅极结构。 另一种方法包括形成场发射装置。 本发明包括根据本申请中提供的方法形成的新型场发射器阵列，自对准栅极结构，场发射器件和显示器件。