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    Carbon film for field emission device
    71.
    发明专利
    Carbon film for field emission device 有权
    用于场发射装置的碳膜

    公开(公告)号：JP2006313761A

    公开(公告)日：2006-11-16

    申请号：JP2006229336

    申请日：2006-08-25

    Applicant: Nano Proprietary Inc ,  ナノプロプリエタリー,インコーポレイテッド

    Inventor： TOLT ZHIDAN LI

    IPC: C01B31/02 ,  H01J1/304 ,  B01J19/00 ,  C23C16/26 ,  H01J1/02 ,  H01J1/05 ,  H01J1/30 ,  H01J29/04 ,  H01J31/12 ,  H01L29/78

    CPC classification number: C23C16/26 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/30453 ,  H01J2329/0444

    Abstract: PROBLEM TO BE SOLVED: To provide a carbon film for a field emission device utilized for manufacture of a flat cathode, provided with specific physical characteristics. SOLUTION: The carbon film (703) used as a field emission cathode is a thin carbon film formed on a substrate (803). The carbon film has a UV-Raman band ranging between 1578 cm -1 and 1620 cm -1 with a full width at half maximum (FWHM) of 25 to 165 cm -1 . The carbon film may be thinner than 300 nanometers. The substrate on which the film is deposited may or may not have conductivity. In case that the substrate does not have conductivity, the substrate can be coated by a continuous conductive layer, or by a minute net structure of a conductive material. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供用于制造具有特定物理特性的扁平阴极的用于场致发射装置的碳膜。 解决方案：用作场致发射阴极的碳膜（703）是形成在基板（803）上的薄碳膜。 该碳膜具有范围在1578cm -1至16cm之间的紫外线 - 拉曼带，其宽度最大（FWHM）为25至165cm 3， SP> -1 。 碳膜可以比300纳米薄。 其上沉积有膜的基底可以具有或不具有导电性。 在基板不具有导电性的情况下，可以通过连续导电层或导电材料的微小网状结构来涂覆基板。 版权所有（C）2007，JPO＆INPIT

    Electron emitting element, electron source, image display device, and manufacturing method of electron emitting element
    76.
    发明专利
    Electron emitting element, electron source, image display device, and manufacturing method of electron emitting element 审中-公开
    电子发射元件，电子源，图像显示装置和电子发射元件的制造方法

    公开(公告)号：JP2009104916A

    公开(公告)日：2009-05-14

    申请号：JP2007276269

    申请日：2007-10-24

    Applicant: Canon Inc ,  キヤノン株式会社

    Inventor： TERAMOTO YOJI ,  FUJIWARA RYOJI ,  NISHIMURA MICHIYO ,  NOMURA KAZUJI ,  MURAKAMI SHUNSUKE

    IPC: H01J9/02 ,  H01J1/304 ,  H01J31/12

    CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30453 ,  H01J2329/0444

    Abstract: PROBLEM TO BE SOLVED: To provide an electron emitting element of field emission type which realizes electron emission that carries out beam convergence by low electric field and can emit electrons with high efficiency at a low voltage and of which manufacturing process is easy, an electron source, and an image display device. SOLUTION: A manufacturing method of the electron emitting element comprises a process to prepare beforehand a substrate having an insulating or a semi-conductive layer, and a process to expose the layer in an atmosphere including a neutral radical containing hydrogen. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 解决的问题：为了提供一种通过低电场实现光束会聚的电子发射的场致发射型电子发射元件，能够在低电压下以高效率发射电子，并且制造工艺容易， 电子源和图像显示装置。 解决方案：电子发射元件的制造方法包括预先制备具有绝缘或半导体层的衬底的工艺，以及在包含含氢的中性基团的气氛中暴露该层的工艺。 版权所有（C）2009，JPO＆INPIT

    Field emission type electrode, its manufacturing method, and its manufacturing device
    77.
    发明专利
    Field emission type electrode, its manufacturing method, and its manufacturing device 有权
    现场排放型电极及其制造方法及其制造装置

    公开(公告)号：JP2009087775A

    公开(公告)日：2009-04-23

    申请号：JP2007256825

    申请日：2007-09-28

    Applicant: Casio Comput Co Ltd ,  Kochi Prefecture Sangyo Shinko Center ,  カシオ計算機株式会社 ,  財団法人高知県産業振興センター

    Inventor： NISHIMURA KAZUHITO ,  SASAOKA HIDENORI

    IPC: H01J9/44 ,  H01J1/304 ,  H01J9/02 ,  H01J63/06

    CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30453 ,  H01J2201/30457

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a field emission type electrode capable of comparatively uniforming electron emission density. SOLUTION: After applying a humidifying treatment on a field emission type electrode with an electron emission film formed, a pulse voltage is impressed between the field emission type electrode and an opposed electrode. Water molecules adhered on the electron emission film repeats absorption and desorption in correspondence to the pulse voltage. With this, electron begins to be emitted from an area with weak electron emission intensity and an area in which electron is not emitted, so that unevenness of electron emission density of the field emission type electrode can be comparatively averaged out. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供能够使电子发射密度相对均匀的场致发射型电极的制造方法。 解决方案：在形成有电子发射膜的场发射型电极上进行加湿处理之后，在场发射型电极和相对电极之间施加脉冲电压。 附着在电子发射膜上的水分子对应于脉冲电压重复吸收和解吸。 由此，电子开始从具有弱电子发射强度的区域和不发射电子的区域发射，从而可以相对地平均出场发射型电极的电子发射密度的不均匀性。 版权所有（C）2009，JPO＆INPIT

    Carbon film for field emission device
    79.
    发明专利
    Carbon film for field emission device 有权
    用于场发射装置的碳膜

    公开(公告)号：JP2007220690A

    公开(公告)日：2007-08-30

    申请号：JP2007148694

    申请日：2007-06-04

    Applicant: Nano Proprietary Inc ,  ナノプロプリエタリー,インコーポレイテッド

    Inventor： TOLT ZHIDAN LI

    IPC: C01B31/02 ,  H01J1/304 ,  B01J19/00 ,  C23C16/26 ,  H01J1/02 ,  H01J1/05 ,  H01J1/30 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L29/78

    CPC classification number: C23C16/26 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/30453 ,  H01J2329/0444

    Abstract: PROBLEM TO BE SOLVED: To provide a field emission film used for manufacturing a flat cathode, and exhibiting a specific physical characteristic. SOLUTION: A carbon film 703 used for a field emission cathode comprises a layer of thin carbon film on a substrate 803. The carbon film has a UV Raman band in the range of 1,578 to 1,620 cm -1 with a full width at half maximum (FWHM) from 25 to 165 cm -1 . The thickness of the carbon film may be smaller than 300 nm. A substrate for depositing the film may be conductive or nonconductive. In the case of the nonconductive substrate, the substrate can be coated with a continuous conductive layer or a dense mesh structure of a conductive material. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供用于制造扁平阴极并具有特定物理特性的场致发射膜。 解决方案：用于场发射阴极的碳膜703包括在衬底803上的薄碳膜层。碳膜具有1578至1,620cm -1的范围内的UV拉曼带， SP>具有25至165cm -1的半高宽（FWHM）。 碳膜的厚度可以小于300nm。 用于沉积膜的衬底可以是导电的或不导电的。 在非导电衬底的情况下，衬底可以涂覆有导电材料的连续导电层或致密网状结构。 版权所有（C）2007，JPO＆INPIT

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