Abstract:
The invention refers to an optical measurement arrangement having an ellipsometer (45) and a device for ascertaining and correcting directional deviations between the line normal to the specimen surface and the angle bisector (25) between the incident and return beams (23, 24) of the ellipsometer (45), and further to a measurement arrangement having a mirror objective and a device for ascertaining directional deviations between the line normal to the specimen surface and the optical axis of the mirror objective, which has a deflection element in the unused aperture space of the mirror objective. In an optical measurement arrangement of the kind described above, a direction monitoring beam (30) is directed onto the specimen (P); optical means for imaging the return reflection of the direction monitoring beam (30) onto an area detector that is connected to an evaluation circuit (46) are also provided, and positioning commands for a specimen stage (12) are available at the outputs of the evaluation circuit (46). By way of the control commands, the specimen stage is caused to tilt until the return reflection on the area detector has assumed the position at which the direction of the normal line corresponds to the direction of the angle bisector (25).
Abstract:
A polarization modulation photoreflectance technique has been developed for optical characterization of semiconductor quantum confined structures. By using a tunable laser source in conjunction with polarization state modulation, a single beam modulation spectroscopy technique may be used to characterize the optical response of semiconductor materials and structures. Disclosed methods and instruments are suitable for characterization of optical signatures of quantum electronic confinement, including resolution of excitonic states at the band edge or other direct or indirect critical points in the band structure. This allows for characterization of semiconductor quantum well structures, for characterization of strain in semiconductor films, and for characterization of electric fields at semiconductor interfaces.
Abstract:
A combination metrology tool is disclosed which is capable of obtaining both thermal wave and optical spectroscopy measurements on a semiconductor wafer. In a preferred embodiment, the principal combination includes a thermal wave measurement and a spectroscopic ellipsometric measurement. These measurements are used to characterize ion implantation processes in semiconductors over a large dosage range.
Abstract:
Provided are systems and methods using a Soleil-Babinet compensator (101) as a standard for calibrating birefringence measurement systems. Highly precise and repeatable calibration is accomplished by the method described here because, among other things, the inventive method accounts for variations of retardance across the surface of the Soleil-Babinet compensator (101). The calibration technique described here may be employed in birefringence measurement systems that have a variety of optical setups for measuring a range of retardation levels and at various frequencies of light sources.
Abstract:
To provide a concentration measuring method which enables a stable and highly accurate concentration measurement while avoiding the step of making a background measurement. The concentration measuring apparatus includes: a concentration measuring contact that is brought into contact with a subject of measurement; a light source that emits light and enters the light into the concentration measuring contact; a polarizer that takes out p-polarized and s-polarized light components from the light which is passed through the concentration measuring contact into the subject of measurement, transmitted in the subject of measurement, and returned to the concentration measuring contact; a photodetector that determines at least the quantities of the p-polarized and s-polarized light components taken out by the polarizer; and calculating means that calculates the concentration of a specific component contained in the subject of measurement based on the determined results.
Abstract:
A simultaneous optical isolation and channel monitoring system for monitoring a channel of an incident light is provided. The system includes an optical isolator for receiving an incident light so as to isolate an interference of backward light into the cavity of laser source or an optical amplifier, wherein after passing through the optical isolator, the incident light has a different polarization state output changing with a wavelength thereof, a beam splitter connected to the optical isolator for separating the light into a light to output and a light for monitoring signal, a linear polarizer connected to the beam splitter for filtering a quantity of signal from the monitored light, and a photodetector connected to the linear polarizer for detecting the quantity of signal generated from the monitored light so as to monitor the channel.
Abstract:
Apparatus for acquiring an image of a specimen comprising a cassette having an optical portion holding a specimen array on a TIR surface and being removably matable to a processing portion having a polarized light beam source and a processing polarization-sensitive portion to image the spatially distributed charges in polarization of the specimen array. In one form the array optical portion comprises a transparent slide having a bottom surface with first and second gratings located to direct polarized light to the TIR surface and to direct light reflected by that (TIR) surface to an imager, respectively. The apparatus may include a flow cell integral with the optical portion as well as means for selecting the direction and wavelength of the polarized light.
Abstract:
An optical path switch divides sample path radiation into a time series of alternating first polarized components and second polarized components. The first polarized components are transmitted along a first optical path and the second polarized components along a second optical path. A first gasless optical filter train filters the first polarized components to isolate at least a first wavelength band thereby generating first filtered radiation. A second gasless optical filter train filters the second polarized components to isolate at least a second wavelength band thereby generating second filtered radiation. A beam combiner combines the first and second filtered radiation to form a combined beam of radiation. A detector is disposed to monitor magnitude of at least a portion of the combined beam alternately at the first wavelength band and the second wavelength band as an indication of the concentration of the substance in the sample path.
Abstract:
Purging of a light beam path in an effective manner that minimizes the affect of the purging requirement on system throughput. In one embodiment, the invention is incorporated into a birefringence measurement system that has several components for directing light through a sample optical element and thereafter detecting and analyzing the light. The segment of the beam path through the sample is isolated to reduce the volume that requires continual purging.
Abstract:
A defect inspecting apparatus is disclosed that can detect finer defects with high resolution optical images of those defects, and which makes the difference in contrast greater between fine line patterns of a semiconductor device. The defect inspecting apparatus includes a sample mounting device for mounting a sample; lighting and detecting apparatus for illuminating a patterned sample mounted on a mount and detecting the optical image of the reflected light obtained therefrom. Also included is a display for displaying the optical image detected by this lighting and detecting apparatus; an optical parameter setting device for setting and displaying optical parameters for the lighting and detecting apparatus on the display; and optical parameter adjusting apparatus for adjusting optical parameters set for the lighting and detecting apparatus according to the optical parameters set by the optical parameter setting apparatus; a storage device for storing comparative image data; and a defect detecting device for detecting defects from patterns formed on the sample by comparing the optical image detected by the optical image detecting apparatus with the comparative image data stored in the storage.