Optical interference substrate, target detecting substrate, target detecting apparatus, and target detecting process
    1.
    发明申请
    Optical interference substrate, target detecting substrate, target detecting apparatus, and target detecting process 失效
    光学干涉基板,目标检测基板,目标检测装置和目标检测过程

    公开(公告)号:US20040252301A1

    公开(公告)日:2004-12-16

    申请号:US10859244

    申请日:2004-06-03

    CPC classification number: G01N21/45 G01N21/274 G01N21/77 G01N2021/7779

    Abstract: Provided are target detection substrate for target detecting apparatuses capable of detecting various targets such as pathogens, biological substances and toxic substances without using a costly measuring apparatus; which can detect these targets with a low measurement error, high efficiency, simplicity, speed and sensitivity; and which can make a quantitative detection thereof. The target detection substrate includes at least a target interaction part which can interact with a target on an optical interference substrate, which optical interference substrate includes a substrate and a different refractive index film having a different refractive index from that of the substrate disposed on the substrate, and interferes irradiated light to radiate it as interference light where the total number of peak tops and peak bottoms in a graph of transmittance against wavelength of the interference light is from 1 to 20 in an arbitrary wavelength range of 100 nm.

    Abstract translation: 提供一种能够在不使用昂贵的测量装置的情况下能够检测诸如病原体,生物物质和有毒物质的各种靶的靶检测装置的靶检测基板; 可以以低测量误差,高效率,简便性,速度和灵敏度检测这些目标; 并可进行定量检测。 目标检测基板至少包括能够与光学干涉基板上的目标相互作用的目标相互作用部分,所述光学干涉基板包括基板和与设置在基板上的基板的折射率不同的折射率的折射率膜 并且干涉照射的光以辐射它作为干涉光,其中在100nm的任意波长范围内透射率对干涉光的波长的图的峰值顶部和峰值底部的总数为1至20。

    Differential numerical aperture methods
    2.
    发明申请
    Differential numerical aperture methods 有权
    差分数值孔径法

    公开(公告)号:US20040246481A1

    公开(公告)日:2004-12-09

    申请号:US10866424

    申请日:2004-06-10

    Inventor: John V. Sandusky

    CPC classification number: G01J3/02 G01J3/0229 G01N21/47 G01N2021/214

    Abstract: Methods for differential numerical aperture analysis of samples, utilizing angle-of-incidence measurements resulting from variable illumination or observation numerical apertures, or both. Metrology applications are provided, and more particularly including scatterometer, ellipsometer and similar analysis methods, including bi-directional reflectance or transmission distribution function measurement.

    Abstract translation: 使用样品的差分数值孔径分析方法,利用由可变照明或观察数值孔径引起的入射角度测量,或两者。 提供了测量应用,更具体地包括散射仪,椭偏仪和类似的分析方法,包括双向反射或传输分布函数测量。

    Apparatus and method for measuring optically active materials
    3.
    发明申请
    Apparatus and method for measuring optically active materials 失效
    用于测量光学活性材料的装置和方法

    公开(公告)号:US20040238361A1

    公开(公告)日:2004-12-02

    申请号:US10489870

    申请日:2004-07-08

    Inventor: Yaacov Shulman

    CPC classification number: G01N21/21

    Abstract: Apparatus and method for sensing and measuring optically active material in a sample, comprising: a) a light source emitting light of a wavelength that can pass through the sample; b) a light transparent sample container for holding the sample; c) a linear polarizer interposed between the light source and the sample for producing a polarized light beam; d) a symmetrical linear split-field polarizer fixedly positioned to intercept the polarized light that passed through the sample; e) detectors to detect the split light beams passing through each polarizer of the split-field polarizer; f) means to amplify the current or voltage passing through each of the detectors; g) a differential amplifier; h) a data processor; i) a display; and j) electronic circuitry to operate the apparatus and provide an output on the display.

    Abstract translation: 用于感测和测量样品中光学活性材料的装置和方法,包括:a)发射波长可通过样品的光的光源; b)用于保持样品的透光样品容器; c)设置在所述光源和所述样品之间以产生偏振光束的线性偏振片; d)对称线性分裂场偏振器,其固定地定位成截取通过样品的偏振光; e)检测器,以检测穿过分离场偏振器的每个偏振器的分束光束; f)用于放大通过每个检测器的电流或电压的装置; g)差分放大器; h)数据处理器; i)显示器 以及j)用于操作所述设备并在所述显示器上提供输出的电子电路。

    Modulated scatterometry
    4.
    发明申请
    Modulated scatterometry 有权
    调制散点

    公开(公告)号:US20040169859A1

    公开(公告)日:2004-09-02

    申请号:US10376750

    申请日:2003-02-28

    Inventor: Walter Lee Smith

    CPC classification number: G01N21/1717 G01N21/4788 G01N2021/1719

    Abstract: An apparatus for scatterometry measurements is disclosed. The apparatus includes a modulated pump source for exciting the sample. A separate probe beam is directed to interact with the sample and the modulated optical response is measured. The measured data is subjected to a scatterometry analysis in order to evaluate geometrical sample features that induce light scattering.

    Abstract translation: 公开了一种用于散射测量的装置。 该装置包括用于激发样品的调制泵浦源。 引导单独的探针光束与样品相互作用,并测量调制的光学响应。 对测量数据进行散射分析,以评估诱导光散射的几何样本特征。

    Concurrent measurement and cleaning of thin films on silicon-on-insulator (SOI)
    5.
    发明申请
    Concurrent measurement and cleaning of thin films on silicon-on-insulator (SOI) 有权
    同时测量和清洁绝缘体上硅(SOI)上的薄膜

    公开(公告)号:US20040130718A1

    公开(公告)日:2004-07-08

    申请号:US10339518

    申请日:2003-01-08

    Inventor: Shankar Krishnan

    CPC classification number: G01J4/00 G01B11/06 G01B11/065

    Abstract: A system for performing single wavelength ellipsometry (SWE) on a thin film on a multi-layer substrate such as silicon-on-insulator (SOI) applies a measurement beam having an absorption distance less than the thickness of the superficial layer of the multi-layer substrate. For example, for an SOI substrate, the measurement beam is selected to have a wavelength that results in an absorption distance that is less than the superficial silicon layer thickness. The system can include a cleaning laser to provide concurrent cleaning to enhance measurement accuracy without negatively impacting throughput. The measurement beam source can be configured to provide a measurement beam at one wavelength and a cleaning beam at a longer wavelength, so that the absorption depth of the measurement beam is less than the superficial layer thickness while the absorption depth of the cleaning beam is greater than the superficial layer thickness.

    Abstract translation: 在诸如绝缘体上硅(SOI)的多层基板上的薄膜上执行单波长椭偏仪(SWE)的系统应用具有小于多层膜的表层的厚度的吸收距离的测量光束, 层基板。 例如,对于SOI衬底,测量光束被选择为具有导致小于表面硅层厚度的吸收距离的波长。 该系统可以包括清洁激光器以提供同时清洁以提高测量精度,而不会不利地影响生产量。 测量光束源可以被配置为提供一个波长的测量光束和较长波长的清洁光束,使得测量光束的吸收深度小于表面层厚度,而清洁光束的吸收深度更大 比表面层厚度。

    Sensors system and method incorporating fibre bragg gratings
    6.
    发明申请
    Sensors system and method incorporating fibre bragg gratings 审中-公开
    包含光纤布拉格光栅的传感器系统和方法

    公开(公告)号:US20040113055A1

    公开(公告)日:2004-06-17

    申请号:US10474551

    申请日:2003-10-09

    CPC classification number: G01L1/246 G01B11/18 G01D5/35316 G01D5/35387

    Abstract: A sensor system comprises first and second fibre bragg gratings (FBGs). The two fibre bragg gratings receive light from a common light source and produce respective measurement signals having a spectrum dependent on a measurement signals having a spectrum dependent on a measurand, and a common reference signal. The two measurement signals pass through respective edge filters to respective detectors and a third detector monitors the reference intensity. A processor produces a value for the measurand from the received and detected signals. The system can be used in a temperature compensated strain gauge.

    Abstract translation: 传感器系统包括第一和第二光纤布拉格光栅(FBG)。 两个光纤布拉格光栅接收来自公共光源的光,并产生具有取决于具有取决于被测量的光谱的测量信号的光谱的相应测量信号和公共参考信号。 两个测量信号通过相应的边缘滤波器到相应的检测器,并且第三检测器监测参考强度。 处理器从接收和检测到的信号产生被测量的值。 该系统可用于温度补偿应变仪。

    Method and apparatus for forming substrate for semiconductor or the like
    7.
    发明申请
    Method and apparatus for forming substrate for semiconductor or the like 失效
    用于形成用于半导体等的衬底的方法和装置

    公开(公告)号:US20040105096A1

    公开(公告)日:2004-06-03

    申请号:US10717552

    申请日:2003-11-21

    Inventor: Yoshio Takami

    CPC classification number: G01N21/8422 G01N21/211

    Abstract: In an apparatus which determines characteristics of a thin film according to the present invention, a temporal change in a refractive index n and an extinction coefficient k of a thin film in a period from start of a change in the thin film as a processing target (e.g., melting) to end of the change (e.g., solidification) can be obtained with a high time resolution of pico-seconds. Based on this, it is possible to know a progress of a change in state of the thin film (e.g., crystallization) or a transition of growth of crystal grains in units of pico-seconds.

    Abstract translation: 在根据本发明的确定薄膜特性的装置中,在从作为处理目标的薄膜的变化开始的时段内的薄膜的折射率n和消光系数k的时间变化( 例如,熔化)到结束变化(例如,凝固)可以以高的时间分辨率获得微微秒。 基于此,可以知道薄膜状态的变化(例如结晶)的进展或晶粒生长的转变,以微微秒为单位。

    Optical inspection equipment for semiconductor wafers with precleaning
    8.
    发明申请
    Optical inspection equipment for semiconductor wafers with precleaning 有权
    具有预清洗功能的半导体晶片的光学检测设备

    公开(公告)号:US20040100633A1

    公开(公告)日:2004-05-27

    申请号:US10717316

    申请日:2003-11-19

    Abstract: A method for improving the measurement of semiconductor wafers is disclosed. In the past, the repeatability of measurements was adversely affected due to the unpredictable growth of a layer of contamination over the intentionally deposited dielectric layers. Repeatability can be enhanced by removing this contamination layer prior to measurement. This contamination layer can be effectively removed in a non-destructive fashion by subjecting the wafer to a cleaning step. In one embodiment, the cleaning is performed by exposing the wafer to microwave radiation. Alternatively, the wafer can be cleaned with a radiant heat source. These two cleaning modalities can be used alone or in combination with each other or in combination with other cleaning modalities. The cleaning step may be carried out in air, an inert atmosphere or a vacuum. Once the cleaning has been performed, the wafer can be measured using any number of known optical measurement systems.

    Abstract translation: 公开了一种改善半导体晶片测量的方法。 在过去,由于在有意沉积的介电层上的污染层的不可预测的增长,测量的重复性受到不利影响。 在测量之前,通过去除这个污染层可以提高重复性。 通过使晶片进行清洁步骤,可以非破坏性地有效地去除该污染层。 在一个实施例中,通过将晶片暴露于微波辐射来进行清洁。 或者,可以用辐射热源清洁晶片。 这两种清洁方式可以单独使用或彼此组合使用或与其他清洁模式组合使用。 清洁步骤可以在空气,惰性气氛或真空中进行。 一旦执行了清洁,就可以使用任何数量的已知光学测量系统测量晶片。

    Method for the temperature-compensated, electro-optical measurement of an electrical voltage and device for carrying out the method
    9.
    发明申请
    Method for the temperature-compensated, electro-optical measurement of an electrical voltage and device for carrying out the method 失效
    用于进行温度补偿,电光测量电压的方法和用于执行该方法的装置

    公开(公告)号:US20040095570A1

    公开(公告)日:2004-05-20

    申请号:US10467305

    申请日:2003-08-06

    CPC classification number: G01R15/247 G01R15/241

    Abstract: In order to measure an electrical voltage in an electrooptical voltage converter, polarized light at two wavelengths is sent through the medium (1). On the output side, the light is passed through a polarizer (10) and the remaining signal is measured. In order to compensate for the temperature dependency of the electrooptical coefficients, the measurement results at the two wavelengths are compared with one another, and that voltage value which is consistent with both measurements is used.

    Abstract translation: 为了测量电光电压转换器中的电压,两个波长的偏振光通过介质(1)发送。 在输出侧,光通过偏振器(10),并测量剩余的信号。 为了补偿电光系数的温度依赖性,将两个波长的测量结果相互比较,并且使用与两个测量一致的电压值。

    Apparatus for measuring film thickness formed on object, apparatus and method of measuring spectral reflectance of object, and apparatus and method of inspecting foreign material on object
    10.
    发明申请
    Apparatus for measuring film thickness formed on object, apparatus and method of measuring spectral reflectance of object, and apparatus and method of inspecting foreign material on object 失效
    用于测量物体上形成的膜厚的装置,测量物体的光谱反射率的装置和方法,以及检测物体上的异物的装置和方法

    公开(公告)号:US20040075836A1

    公开(公告)日:2004-04-22

    申请号:US10652071

    申请日:2003-09-02

    CPC classification number: G01N21/211 G01B11/168 G01N21/9501

    Abstract: A film thickness measurement apparatus (1) comprises an ellipsometer (3) for acquiring a polarization state of a film on a substrate (9) and a light interference unit (4) for acquiring spectral intensity of the film on the substrate (9). In an optical system (45) of the light interference unit (4), a light shielding pattern (453a) is disposed in an aperture stop part (453), and an illumination light from a light source (41) is emitted to the substrate (9) through the optical system (45). A reflected light from the substrate (9) is guided to a light shielding pattern imaging part (43), where an image of the light shielding pattern (453a) is acquired. When the ellipsometer (3) performs a film thickness measurement, a tilt angle of the substrate (9) is obtained on the basis of the image of the light shielding pattern (453a) and a light receiving unit (32) acquires a polarization state of the reflected light. An calculation part (51) obtains a thickness of a film with high precision from the polarization state of the reflected light by using the obtained tilt angle.

    Abstract translation: 膜厚测量装置(1)包括用于获取基板(9)上的胶片的偏振态的椭圆偏振仪(3)和用于获取基板(9)上的胶片的光谱强度的光干涉单元(4)。 在光干涉单元(4)的光学系统(45)中,在孔径光阑部(453)中设置有遮光图案(453a),将来自光源(41)的照明光发射到基板 (9)通过光学系统(45)。 来自基板(9)的反射光被引导到获取了遮光图案(453a)的图像的遮光图案成像部(43)。 当椭圆光度计(3)进行膜厚测量时,基于遮光图案(453a)的图像获得基板(9)的倾斜角度,并且光接收单元(32)获得偏光状态 反射光。 计算部件(51)通过使用所获得的倾斜角度从反射光的偏振状态获得高精度的胶片的厚度。

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