Abstract:
Provided are target detection substrate for target detecting apparatuses capable of detecting various targets such as pathogens, biological substances and toxic substances without using a costly measuring apparatus; which can detect these targets with a low measurement error, high efficiency, simplicity, speed and sensitivity; and which can make a quantitative detection thereof. The target detection substrate includes at least a target interaction part which can interact with a target on an optical interference substrate, which optical interference substrate includes a substrate and a different refractive index film having a different refractive index from that of the substrate disposed on the substrate, and interferes irradiated light to radiate it as interference light where the total number of peak tops and peak bottoms in a graph of transmittance against wavelength of the interference light is from 1 to 20 in an arbitrary wavelength range of 100 nm.
Abstract:
Methods for differential numerical aperture analysis of samples, utilizing angle-of-incidence measurements resulting from variable illumination or observation numerical apertures, or both. Metrology applications are provided, and more particularly including scatterometer, ellipsometer and similar analysis methods, including bi-directional reflectance or transmission distribution function measurement.
Abstract:
Apparatus and method for sensing and measuring optically active material in a sample, comprising: a) a light source emitting light of a wavelength that can pass through the sample; b) a light transparent sample container for holding the sample; c) a linear polarizer interposed between the light source and the sample for producing a polarized light beam; d) a symmetrical linear split-field polarizer fixedly positioned to intercept the polarized light that passed through the sample; e) detectors to detect the split light beams passing through each polarizer of the split-field polarizer; f) means to amplify the current or voltage passing through each of the detectors; g) a differential amplifier; h) a data processor; i) a display; and j) electronic circuitry to operate the apparatus and provide an output on the display.
Abstract:
An apparatus for scatterometry measurements is disclosed. The apparatus includes a modulated pump source for exciting the sample. A separate probe beam is directed to interact with the sample and the modulated optical response is measured. The measured data is subjected to a scatterometry analysis in order to evaluate geometrical sample features that induce light scattering.
Abstract:
A system for performing single wavelength ellipsometry (SWE) on a thin film on a multi-layer substrate such as silicon-on-insulator (SOI) applies a measurement beam having an absorption distance less than the thickness of the superficial layer of the multi-layer substrate. For example, for an SOI substrate, the measurement beam is selected to have a wavelength that results in an absorption distance that is less than the superficial silicon layer thickness. The system can include a cleaning laser to provide concurrent cleaning to enhance measurement accuracy without negatively impacting throughput. The measurement beam source can be configured to provide a measurement beam at one wavelength and a cleaning beam at a longer wavelength, so that the absorption depth of the measurement beam is less than the superficial layer thickness while the absorption depth of the cleaning beam is greater than the superficial layer thickness.
Abstract:
A sensor system comprises first and second fibre bragg gratings (FBGs). The two fibre bragg gratings receive light from a common light source and produce respective measurement signals having a spectrum dependent on a measurement signals having a spectrum dependent on a measurand, and a common reference signal. The two measurement signals pass through respective edge filters to respective detectors and a third detector monitors the reference intensity. A processor produces a value for the measurand from the received and detected signals. The system can be used in a temperature compensated strain gauge.
Abstract:
In an apparatus which determines characteristics of a thin film according to the present invention, a temporal change in a refractive index n and an extinction coefficient k of a thin film in a period from start of a change in the thin film as a processing target (e.g., melting) to end of the change (e.g., solidification) can be obtained with a high time resolution of pico-seconds. Based on this, it is possible to know a progress of a change in state of the thin film (e.g., crystallization) or a transition of growth of crystal grains in units of pico-seconds.
Abstract:
A method for improving the measurement of semiconductor wafers is disclosed. In the past, the repeatability of measurements was adversely affected due to the unpredictable growth of a layer of contamination over the intentionally deposited dielectric layers. Repeatability can be enhanced by removing this contamination layer prior to measurement. This contamination layer can be effectively removed in a non-destructive fashion by subjecting the wafer to a cleaning step. In one embodiment, the cleaning is performed by exposing the wafer to microwave radiation. Alternatively, the wafer can be cleaned with a radiant heat source. These two cleaning modalities can be used alone or in combination with each other or in combination with other cleaning modalities. The cleaning step may be carried out in air, an inert atmosphere or a vacuum. Once the cleaning has been performed, the wafer can be measured using any number of known optical measurement systems.
Abstract:
In order to measure an electrical voltage in an electrooptical voltage converter, polarized light at two wavelengths is sent through the medium (1). On the output side, the light is passed through a polarizer (10) and the remaining signal is measured. In order to compensate for the temperature dependency of the electrooptical coefficients, the measurement results at the two wavelengths are compared with one another, and that voltage value which is consistent with both measurements is used.
Abstract:
A film thickness measurement apparatus (1) comprises an ellipsometer (3) for acquiring a polarization state of a film on a substrate (9) and a light interference unit (4) for acquiring spectral intensity of the film on the substrate (9). In an optical system (45) of the light interference unit (4), a light shielding pattern (453a) is disposed in an aperture stop part (453), and an illumination light from a light source (41) is emitted to the substrate (9) through the optical system (45). A reflected light from the substrate (9) is guided to a light shielding pattern imaging part (43), where an image of the light shielding pattern (453a) is acquired. When the ellipsometer (3) performs a film thickness measurement, a tilt angle of the substrate (9) is obtained on the basis of the image of the light shielding pattern (453a) and a light receiving unit (32) acquires a polarization state of the reflected light. An calculation part (51) obtains a thickness of a film with high precision from the polarization state of the reflected light by using the obtained tilt angle.