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公开(公告)号：TWI480653B
公开(公告)日：2015-04-11
申请号：TW097114419
申请日：2008-04-18
Applicant: 坎畢歐科技公司 , CAMBRIOS TECHNOLOGIES CORP.
Inventor： 曼弗埃 海德克 , HEIDECKER, MANFRED , 皮耶 馬可 艾勒蒙 , ALLEMAND, PIERRE-MARC , 麥可A 史派德 , SPAID, MICHAEL A. , 代海霞 , DAI, HAIXIA
CPC classification number: H01B1/02 , B22F1/0022 , B22F3/002 , B22F2001/0029 , B22F2998/10 , B82Y10/00 , B82Y30/00 , G02F1/13439 , H01B1/22 , H01L31/02162 , H05K1/097 , B22F1/0025
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公开(公告)号：TW201441144A
公开(公告)日：2014-11-01
申请号：TW103109204
申请日：2014-03-13
Applicant: 坎畢歐科技公司 , CAMBRIOS TECHNOLOGIES CORP.
Inventor： 代海霞 , DAI, HAIXIA , 史派德 麥可A , SPAID, MICHAEL A. , 沃克 傑佛瑞 , WOLK, JEFFREY , 畢亞尼 考佩許 , BIYANI, KALPESH
Abstract: 本發明係關於一種具有以奈米結構為主之透明導電膜及低漫反射之光學堆疊。本發明亦描述一種併入該等光學堆疊之顯示裝置。
Abstract in simplified Chinese: 本发明系关于一种具有以奈米结构为主之透明导电膜及低漫反射之光学堆栈。本发明亦描述一种并入该等光学堆栈之显示设备。
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83.发明专利複合透明導體及形成其之方法 COMPOSITE TRANSPARENT CONDUCTORS AND METHODS OF FORMING THE SAME 审中-公开复合透明导体及形成其之方法 COMPOSITE TRANSPARENT CONDUCTORS AND METHODS OF FORMING THE SAME
公开(公告)号：TW200924203A
公开(公告)日：2009-06-01
申请号：TW097114413
申请日：2008-04-18
Applicant: 坎畢歐科技公司 CAMBRIOS TECHNOLOGIES CORP.
Inventor： 大衛 瓊斯 JONES, DAVID , 佛羅倫 波史考特卡 PSCHENITZKA, FLORIAN , 希納 寬 QUAN, XINA , 麥可A 史派德 SPAID, MICHAEL A. , 傑佛瑞 沃克 WOLK, JEFFREY
CPC classification number: H05K3/245 , B82Y10/00 , B82Y30/00 , G02F1/13439 , H01L29/0669 , H01L29/413 , H01L31/1884 , H01L51/0048 , H01L51/5206 , H05K1/097 , H05K3/249 , H05K2201/0108 , H05K2201/026 , Y02E10/50
Abstract: 本發明描述複合透明導體,其包含基於金屬奈米線或金屬奈米管之主要導電介質,及基於不同類型之奈米結構或連續導電膜之次要導電介質。
Abstract in simplified Chinese: 本发明描述复合透明导体,其包含基于金属奈米线或金属奈米管之主要导电介质,及基于不同类型之奈米结构或连续导电膜之次要导电介质。
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84.发明专利高對比透明導體及形成其方法 HIGH CONTRAST TRANSPARENT CONDUCTORS AND METHODS OF FORMING THE SAME 审中-公开高对比透明导体及形成其方法 HIGH CONTRAST TRANSPARENT CONDUCTORS AND METHODS OF FORMING THE SAME
公开(公告)号：TW200907519A
公开(公告)日：2009-02-16
申请号：TW097114419
申请日：2008-04-18
Applicant: 坎畢歐科技公司 CAMBRIOS TECHNOLOGIES CORP.
Inventor： 曼弗埃 海德克 HEIDECKER, MANFRED , 皮耶 馬可 艾勒蒙 ALLEMAND, PIERRE-MARC , 麥可A 史派德 SPAID, MICHAEL A. , 代海霞 DAI, HAIXIA
CPC classification number: H01B1/02 , B22F1/0022 , B22F3/002 , B22F2001/0029 , B22F2998/10 , B82Y10/00 , B82Y30/00 , G02F1/13439 , H01B1/22 , H01L31/02162 , H05K1/097 , B22F1/0025
Abstract: 本發明描述增强基於導電奈米結構之透明導體之對比率的方法。藉由經由電鍍該等導電奈米結構接著蝕刻或氧化下伏導電奈米結構之步驟而減少該等奈米結構之光散射及反射性來顯著地改良對比率。
Abstract in simplified Chinese: 本发明描述增强基于导电奈米结构之透明导体之对比率的方法。借由经由电镀该等导电奈米结构接着蚀刻或氧化下伏导电奈米结构之步骤而减少该等奈米结构之光散射及反射性来显着地改良对比率。
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85.发明专利種子層、覆蓋層及薄膜及製備彼等之方法 SEED LAYERS, CAP LAYERS, AND THIN FILMS AND METHODS OF MAKING THEREOF 审中-公开种子层、覆盖层及薄膜及制备彼等之方法 SEED LAYERS, CAP LAYERS, AND THIN FILMS AND METHODS OF MAKING THEREOF
公开(公告)号：TW200741960A
公开(公告)日：2007-11-01
申请号：TW095117186
申请日：2006-05-15
Applicant: 坎畢歐科技公司 CAMBRIOS TECHNOLOGIES CORP.
IPC: H01L
CPC classification number: C23C18/1608 , B82Y30/00 , C23C18/1844 , C23C18/50 , H01L21/288 , H01L21/76814 , H01L21/76843 , H01L21/76849 , H01L21/7685 , H01L21/76861 , H01L21/76864 , H01L21/76867 , H01L21/76868 , H01L21/76871 , H01L21/76874 , H01L21/76879
Abstract: 藉由使用第一生物劑於一基板上形成一種子層。該種子層可包含結合至該生物劑之密實奈米粒子。接著該種子層用於沉積一金屬層,諸如用於固態裝置之障壁層、互連層、覆蓋層及/或滙流排線。
Abstract in simplified Chinese: 借由使用第一生物剂于一基板上形成一种子层。该种子层可包含结合至该生物剂之密实奈米粒子。接着该种子层用于沉积一金属层,诸如用于固态设备之障壁层、互连层、覆盖层及/或汇流排线。
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Patent Agency Ranking86.发明专利
公开(公告)号：HK1202975A1
公开(公告)日：2015-10-09
申请号：HK15103352
申请日：2015-04-02
Applicant: OKURA INDUSTRIAL CO LTD , CAMBRIOS TECHNOLOGIES CORP
Inventor： MISHIMA TAKASHI , GOTO KEISUKE , PSCHENITZKA FLORIAN F , WESTWATER JONATHAN J
IPC: H01B20060101
Abstract: [Means of overcoming the problem] Method of manufacturing a transparent electrically conductive substrate having an application process whereby a wet layer is formed by applying onto a substrate film a coating liquid comprising metallic nanowires dispersed in a solvent, and a drying process whereby the solvent contained in the abovementioned wet layer is removed by drying, characterised in that the abovementioned drying process includes a process whereby the orientation of the abovementioned metallic nanowires is altered by introducing a forced draft facing towards the substrate from a direction that is different from the longitudinal direction of the substrate film.
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公开(公告)号：HK1201374A1
公开(公告)日：2015-08-28
申请号：HK15101830
申请日：2015-02-23
Applicant: CAMBRIOS TECHNOLOGIES CORP
Inventor： DAI HAIXIA , SPAID MICHAEL A , WOLK JEFFREY
IPC: H01B20060101 , G02F20060101 , G06F20060101
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公开(公告)号：SG11201504223XA
公开(公告)日：2015-06-29
申请号：SG11201504223X
申请日：2013-12-06
Applicant: CAMBRIOS TECHNOLOGIES CORP
Inventor： WOLK JEFFREY , KNAPP MICHAEL R
IPC: H01B1/22
Abstract: A patterned transparent conductor including a conductive layer coated on a substrate is described. More specifically, the transparent conductor has low-visibility patterns.
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公开(公告)号：SG189953A1
公开(公告)日：2013-06-28
申请号：SG2013030226
申请日：2011-10-21
Applicant: CAMBRIOS TECHNOLOGIES CORP
Inventor： ALLEMAND PIERRE-MARC , BHATIA RIMPLE , MANSKY PAUL
Abstract: Described herein are ink compositions suitable for forming conductive films by printing, in particular, by gravure, flexographic, and reverse offset printing.
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公开(公告)号：HK1172995A1
公开(公告)日：2013-05-03
申请号：HK12113570
申请日：2008-10-21
Applicant: CAMBRIOS TECHNOLOGIES CORP
Inventor： ALDEN JONATHAN , WOLK JEFFREY , DAI HAIXIA , KNAPP MICHAEL R , NA SHUO , PAKBAZ HASH , PSCHENITZKA FLORIAN , QUAN XINA , SPAID MICHAEL A , WINOTO ADRIAN
IPC: H01L20060101 , B82Y20110101 , C30B20060101 , G02B20060101 , G02F20060101 , H01B20060101
Abstract: Disclosed herein is a method of fabricating a transparent conductor which comprises depositing a plurality of metal nanowires on a surface of a substrate, the metal nanowires being dispersed in a liquid; and forming a metal nanowire network layer on the substrate by allowing the liquid to dry, depositing a matrix material on the metal nanowire network layer, and curing the matrix material to form a matrix, the matrix and the metal nanowires embedded therein forming a conductive layer, wherein the substrate is flexible, and wherein the substrate is driven by a rotating reel along a traveling path, and the metal nanowires are deposited at a first deposition station along the traveling path, and the matrix material is deposited at a second deposition station along the traveling path.
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