公开(公告)号：WO2008067231A3

公开(公告)日：2008-07-24

申请号：PCT/US2007085431

申请日：2007-11-21

Applicant: AGILE RF INC ,  CHEN LEE-YIN V

Inventor： CHEN LEE-YIN V

IPC: H01Q3/44

CPC classification number: H01Q9/0471 ,  H01Q9/30

Abstract: A tunable component such as a tunable BST (Barium Strontium Titanate) capacitor is added inside the antenna structure, and the input impedance of the antenna is tuned by tuning this tunable component, rather than adding a multiple-component impedance matching network at the feed point of the antenna outside the antenna as in conventional solutions. With this structure, the input impedance of the antenna may be adjusted very precisely and efficiently.

Abstract translation: 诸如可调BST（钛酸钡锶）​​电容器之类的可调谐组件被添加到天线结构内部，并且通过调谐该可调谐组件来调谐天线的输入阻抗，而不是在馈电点处添加多分量阻抗匹配网络 如在传统解决方案中一样，天线外部的天线。 采用这种结构，天线的输入阻抗可以非常精确和高效地调整。

公开(公告)号：WO2008070248A3

公开(公告)日：2008-06-12

申请号：PCT/US2007/079139

申请日：2007-09-21

Applicant: A10 NETWORKS, INC. ,  CHEN, Lee ,  CHIONG, John ,  KWAN, Philip

Inventor： CHEN, Lee ,  CHIONG, John ,  KWAN, Philip

IPC: G06F11/30

Abstract: A system and method for resolving an identity includes a security console , which displays security information regarding a secure network. The security information includes at least a first identity used to access the secure network. An operator selects the first identity, and the security console sends it to a resolver. The resolver connects with an identity server to find an access session record with an identity matching the first identity. A second identity is extracted from this record, and the resolver returns a result that includes the second identity. The security console displays the second identity. The first identity can be a user identity of a user, where the second identity is corresponding host identity, or vise versa. In this manner, an efficient interface to security information is provided to an operator, where the operator may resolve a user/host identity to a host/user identity interactively.

公开(公告)号：WO2008067013A2

公开(公告)日：2008-06-05

申请号：PCT/US2007/079133

申请日：2007-09-21

Applicant: A10 NETWORKS, INC. ,  CHEN, Lee ,  CHIONG, John ,  WANG, Xin

Inventor： CHEN, Lee ,  CHIONG, John ,  WANG, Xin

IPC: H04L9/32 ,  G06F21/00

CPC classification number: H04L63/102 ,  H04L12/66 ,  H04L29/06 ,  H04L61/6022 ,  H04L61/6068 ,  H04L63/02 ,  H04L63/0281 ,  H04L63/04 ,  H04L63/08 ,  H04L63/0853 ,  H04L63/10 ,  H04L63/30 ,  H04L63/308 ,  H04L65/1003 ,  H04L65/1006 ,  H04L65/1069 ,  H04L65/4007 ,  H04L67/14 ,  H04L67/141 ,  H04L67/146

Abstract: The inventive system includes a host, a network including a security gateway, and a public application. Established are an access session between the network and the host and an application session between the public application and the network. An application session record is created for the application session, and includes the user's public user identity used to access the public application, the user's private user identity used to access the network, a host identity, and an application session time. To determine the private user identity for the application session, the security gateway sends a query with the host identity and the application session time. These are compared with the host identity and access session time in an access session record. If they match, then the private user identity in the access session record is returned, and it is stored as the private user identity in the application session record.

Abstract translation: 本发明的系统包括主机，包括安全网关的网络和公共应用。 建立的是网络和主机之间的访问会话以及公共应用和网络之间的应用会话。 应用程序会话记录是为应用程序会话创建的，并且包括用于访问公共应用程序的用户的公共用户身份，用于访问网络的用户的私人用户身份，主机身份和应用程序会话时间。 要确定应用程序会话的私有用户身份，安全网关会发送一个包含主机身份和应用程序会话时间的查询。 这些与访问会话记录中的主机身份和访问会话时间进行比较。 如果它们匹配，则返回访问会话记录中的私有用户标识，并将其作为私有用户标识存储在应用程序会话记录中。

公开(公告)号：WO2008021620A3

公开(公告)日：2008-02-21

申请号：PCT/US2007/071716

申请日：2007-06-21

Applicant: A10 NETWORKS INC. ,  CHEN, Lee ,  SZETO, Ronald Wai Lun

Inventor： CHEN, Lee ,  SZETO, Ronald Wai Lun

IPC: G06F15/16

Abstract: A system and method for a distributed multi-processing security gateway establishes a host side session, selects a proxy network address for a server based on network information, and using the proxy network address to establish a server side session. The proxy network address is selected such that a same processing element is assigned to process data packets from the server side session and the host side session. The network information includes a security gateway network address and a host network address. By assigning processing elements in this manner, higher capable security gateways are provided.

公开(公告)号：WO2008021620A2

公开(公告)日：2008-02-21

申请号：PCT/US2007071716

申请日：2007-06-21

Applicant: A10 NETWORKS INC ,  CHEN LEE ,  SZETO RONALD WAI LUN

Inventor： CHEN LEE ,  SZETO RONALD WAI LUN

IPC: G06F15/16

CPC classification number: H04L63/0236 ,  H04L63/0227 ,  H04L63/0281 ,  H04L63/20 ,  H04L67/28

Abstract: A system and method for a distributed multi-processing security gateway establishes a host side session, selects a proxy network address for a server based on network information, and using the proxy network address to establish a server side session. The proxy network address is selected such that a same processing element is assigned to process data packets from the server side session and the host side session. The network information includes a security gateway network address and a host network address. By assigning processing elements in this manner, higher capable security gateways are provided.

Abstract translation: 用于分布式多处理安全网关的系统和方法建立主机侧会话，基于网络信息为服务器选择代理网络地址，并使用代理网络地址建立服务器端会话。 选择代理网络地址，使得分配相同的处理元件来处理来自服务器端会话和主机侧会话的数据分组。 网络信息包括安全网关网络地址和主机网络地址。 通过以这种方式分配处理元件，提供了更高能力的安全网关。

公开(公告)号：WO2007041194A3

公开(公告)日：2007-04-12

申请号：PCT/US2006/037813

申请日：2006-09-27

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  ECONOMOU, Demetre, J. ,  CHEN, Lee ,  DONNELLY, Vincent, M.

Inventor： ECONOMOU, Demetre, J. ,  CHEN, Lee ,  DONNELLY, Vincent, M.

IPC: H01J37/32 ,  H05H3/02

Abstract: Method and system for pumping a hyperthermal neutral beam source (205) is described. The pumping system (230) enables use of the hyperthermal neutral beam source (205) for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral beam source (205) coupled to a processing chamber (210) through a neutralizing grid (248). Control is provided by separately pumping the neutral beam source (205) and the processing chamber (210).

公开(公告)号：WO2007041194A2

公开(公告)日：2007-04-12

申请号：PCT/US2006037813

申请日：2006-09-27

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  ECONOMOU DEMETRE J ,  CHEN LEE ,  DONNELLY VINCENT M

Inventor： ECONOMOU DEMETRE J ,  CHEN LEE ,  DONNELLY VINCENT M

IPC: H01J37/32 ,  H05H3/02

CPC classification number: H05H3/02 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: Method and system for pumping a hyperthermal neutral beam source (205) is described. The pumping system (230) enables use of the hyperthermal neutral beam source (205) for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral beam source (205) coupled to a processing chamber (210) through a neutralizing grid (248). Control is provided by separately pumping the neutral beam source (205) and the processing chamber (210).

Abstract translation: 描述了用于泵送超高温中性束源（205）的方法和系统。 泵送系统（230）使得能够使用超高温中性束源（205）用于半导体处理应用，例如蚀刻工艺。 描述了具有通过中和网格（248）耦合到处理室（210）的中性束源（205）的实施例。 通过分别泵送中性束源（205）和处理室（210）来提供控制。

公开(公告)号：WO2005104218A1

公开(公告)日：2005-11-03

申请号：PCT/US2005/004915

申请日：2005-02-11

Applicant: TOKYO ELECTRON LIMITED ,  YUE, Hongyu ,  CHEN, Lee

Inventor： YUE, Hongyu ,  CHEN, Lee

IPC: H01L21/66

CPC classification number: H01L22/20 ,  H01L21/28123 ,  H01L2924/0002 ,  Y02P90/14 ,  H01L2924/00

Abstract: A method and processing tool are provided for controlling trimming of a gate electrode structure containing a gate electrode layer with a first dimension by determining the first dimension of the gate electrode structure, choosing a target trimmed dimension, feeding forward the first dimension and the target trimmed dimension to a process model to create a set of process parameters, performing a trimming process on the gate electrode structure, including controlling the set of process parameter, trimming the gate electrode structure, and measuring a trimmed dimension of the gate electrode structure. The trimming process may be repeated at least once until the target trimmed dimension is obtained, where the trimmed dimension may be fed backward to the process model to create a new set of process parameters.

Abstract translation: 提供了一种方法和处理工具，用于通过确定栅极电极结构的第一尺寸，选择目标修整尺寸，向前馈送第一维和目标修整来控制包含具有第一尺寸的栅极电极层的栅电极结构的修整 以形成一组工艺参数，对栅电极结构进行修整处理，包括控制一组工艺参数，修整栅电极结构以及测量栅电极结构的修整尺寸。 修剪过程可以重复至少一次，直到获得目标修整尺寸，其中修整的尺寸可以被反馈到过程模型以创建新的一组过程参数。

公开(公告)号：WO2004109773A3

公开(公告)日：2005-07-14

申请号：PCT/US2004014757

申请日：2004-05-11

Applicant: TOKYO ELECTRON LTD ,  CHEN LEE ,  KAMBARA HIROMITSU ,  IWAMA NOBUHIRO

Inventor： CHEN LEE ,  KAMBARA HIROMITSU ,  IWAMA NOBUHIRO

IPC: H01L21/00 ,  H01L21/311 ,  H01L21/324 ,  H01L21/336 ,  H01L21/461 ,  H05H1/24

CPC classification number: H01L21/31122

Abstract: A method for heating a substrate between a first process and a second process using a plasma is described. The heating method comprises thermally isolating the substrate on the substrate holder by removing the backside supply of a heat transfer gas and removing the clamping force. Furthermore, an inert gas, such as a Noble gas, is introduced to the plasma processing system and a plasma is ignited. The substrate is exposed to the inert plasma for a period of time sufficient to elevate the temperature of the substrate from a first temperature (i.e., typically less than 100 C) to a second temperature (i.e., typically of order 400 C).

Abstract translation: 描述了使用等离子体在第一工艺和第二工艺之间加热衬底的方法。 加热方法包括通过去除传热气体的背面供应并去除夹紧力来热隔离衬底保持器上的衬底。 此外，诸如Noble气体的惰性气体被引入到等离子体处理系统中，并且等离子体被点燃。 将衬底暴露于惰性等离子体一段足以将衬底的温度从第一温度（即通常小于100℃）提升至第二温度（即典型地为400℃）的时间段。

公开(公告)号：WO03065419A2

公开(公告)日：2003-08-07

申请号：PCT/US0300049

申请日：2003-01-28

Applicant: TOKYO ELECTRON LTD ,  CHEN LEE

Inventor： CHEN LEE

IPC: C23F1/00 ,  C23F4/00 ,  H01L21/00 ,  H01L21/3213 ,  H01L

CPC classification number: H01L21/67069 ,  C23F4/00 ,  H01J37/32082 ,  H01L21/32136

Abstract: An apparatus and method are described for etching Ni−containing films using gas phase plasma etching. Etching of Ti−Ni alloys is carried out by exposure to plasma comprising hydrogen halide (HX) and carbonyl etching gases. The Ti in the Ti−Ni alloy is etched via an ion−assisted reaction with HX and the Ni is etched by reacting with CO. The method is particularly well suited for anisotropic etching of Ti− Ni metal gates for CMOS applications. Etching of Ni−Fe layers is carried out by exposure to plasma comprising a carbonyl etching gas.

Abstract translation: 描述了使用气相等离子体蚀刻来蚀刻含Ni膜的装置和方法。 通过暴露于包含卤化氢（HX）和羰基蚀刻气体的等离子体进行Ti-Ni合金的蚀刻。 通过与HX的离子辅助反应对Ti-Ni合金中的Ti进行蚀刻，并通过与CO反应来蚀刻Ni。该方法特别适用于CMOS应用的Ti-Ni金属栅极的各向异性蚀刻。 通过暴露于包含羰基蚀刻气体的等离子体来进行Ni-Fe层的蚀刻。