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    ATOMIC LAYER ETCHING WITH PULSED PLASMAS
    1.
    发明申请
    ATOMIC LAYER ETCHING WITH PULSED PLASMAS 审中-公开
    原子层蚀刻与脉冲等离子体

    公开(公告)号：WO2011081921A2

    公开(公告)日：2011-07-07

    申请号：PCT/US2010/060251

    申请日：2010-12-14

    Applicant: UNIVERSITY OF HOUSTON ,  DONNELLY, Vincent, M. ,  ECONOMOU, Demetre, J.

    Inventor： DONNELLY, Vincent, M. ,  ECONOMOU, Demetre, J.

    IPC: H01L21/3065

    CPC classification number: H01J37/32174 ,  H01J37/32036 ,  H01J37/32045 ,  H01J37/32082 ,  H01J37/32146 ,  H01L21/30655

    Abstract: A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.

    Abstract translation: 一种用于快速原子层蚀刻（ALET）的系统和方法，包括脉冲等离子体源，具有螺旋线圈电极，冷却法拉第屏蔽，设置在管顶部的对置电极，气体入口和包括衬底的反应室 支撑和边界电极。 该方法包括在等离子体蚀刻室中定位可刻蚀的衬底，在衬底的表面上形成产品层，通过脉冲等离子体源去除产物层的一部分，然后重复形成产物层并除去部分的步骤 的产品层以形成蚀刻的衬底。

    ATOMIC LAYER ETCHING WITH PULSED PLASMAS
    2.
    发明申请
    ATOMIC LAYER ETCHING WITH PULSED PLASMAS 审中-公开
    原子层蚀刻与脉冲等离子体

    公开(公告)号：WO2011081921A3

    公开(公告)日：2013-01-03

    申请号：PCT/US2010060251

    申请日：2010-12-14

    Applicant: UNIV HOUSTON SYSTEM ,  DONNELLY VINCENT M ,  ECONOMOU DEMETRE J

    Inventor： DONNELLY VINCENT M ,  ECONOMOU DEMETRE J

    IPC: H01L21/3065 ,  H01J37/32

    CPC classification number: H01J37/32174 ,  H01J37/32036 ,  H01J37/32045 ,  H01J37/32082 ,  H01J37/32146 ,  H01L21/30655

    Abstract: A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.

    Abstract translation: 一种用于快速原子层蚀刻（ALET）的系统和方法，包括脉冲等离子体源，具有螺旋线圈电极，冷却法拉第屏蔽，设置在管顶部的对置电极，气体入口和包括衬底的反应室 支撑和边界电极。 该方法包括在等离子体蚀刻室中定位可刻蚀的衬底，在衬底的表面上形成产品层，通过脉冲等离子体源去除产物层的一部分，然后重复形成产物层并除去部分的步骤 的产品层以形成蚀刻的衬底。

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