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    파장분할 다중화/역다중화기
    81.
    发明公开
    파장분할 다중화/역다중화기 有权
    波长段多路复用器/解复用器

    公开(公告)号：KR1020040045583A

    公开(公告)日：2004-06-02

    申请号：KR1020020073406

    申请日：2002-11-25

    Applicant: 삼성전자주식회사

    Inventor： 김영훈 ,  정선태 ,  한동균

    IPC: G02B6/293

    CPC classification number: G02B6/12016

    Abstract: PURPOSE: A wavelength division multiplexer/demultiplexer is provided to prevent an interference phenomenon between neighboring channels by increasing and reducing the width of an input waveguide. CONSTITUTION: A wavelength division multiplexer/demultiplexer includes a grating for demultiplexing multiplexed optical signal to each channel, a plurality of input waveguides for inputting optical signals into the grating, and a plurality of output waveguides for outputting the demultiplexed channels. The input waveguide(413) of the wavelength division multiplexer/demultiplexer includes a first sub-waveguide and a second sub-waveguide. The width of the first sub-waveguide(413a) is increased along with the traveling direction of the optical signals. The width of the second sub-waveguide(413b) is reduced along the traveling direction of the optical signals passing the first sub-waveguide.

    Abstract translation: 目的：提供波分复用器/解复用器，以通过增加和减小输入波导的宽度来防止相邻通道之间的干扰现象。 构成：波分多路复用器/解复用器包括用于将多路复用的光信号解复用到每个通道的光栅，用于将光信号输入光栅的多个输入波导和用于输出解复用的通道的多个输出波导。 波分多路复用器/解复用器的输入波导（413）包括第一子波导和第二子波导。 第一子波导（413a）的宽度随着光信号的行进方向而增加。 第二子波导（413b）的宽度沿着通过第一子波导的光信号的行进方向减小。

    격자를 구비한 평면 광도파로 소자
    82.
    发明授权
    격자를 구비한 평면 광도파로 소자 失效
    유자를구비한평면광도파로소자

    公开(公告)号：KR100416998B1

    公开(公告)日：2004-02-05

    申请号：KR1020010061686

    申请日：2001-10-06

    Applicant: 삼성전자주식회사

    Inventor： 조정환 ,  정선태 ,  송정환

    IPC: G02B6/02

    Abstract: PURPOSE: A planar lightwave device having grating is provided to be capable of forming the accurate and uniform grating without using a phase mask, reducing a fabrication time, and realizing the reproducibility of a fabrication process. CONSTITUTION: A core layer(230) is formed on a semiconductor substrate(210), and an optical signal is issued through one end of the core layer. Lower and upper clads(220,250) are formed to surround the core layer. The core layer includes a lightwave part(232) and at least one or more grating parts(234,236). The lightwave part becomes a transfer path of the optical signal. Each of the grating parts is extended from one side of the lightwave part so as to filter a wavelength of the optical signal. A width of the extended part is varied periodically.

    Abstract translation: 目的：提供一种具有光栅的平面光波装置，其能够在不使用相位掩模的情况下形成精确且均匀的光栅，减少制造时间并实现制造过程的再现性。 构成：在半导体衬底（210）上形成芯层（230），并且通过芯层的一端发出光信号。 下部和上部包层（220,250）形成为包围核心层。 芯层包括光波部分（232）和至少一个或多个光栅部分（234,236）。 光波部分成为光信号的传输路径。 每个光栅部分从光波部分的一侧延伸以过滤光信号的波长。 延伸部分的宽度周期性地变化。

    광도파로 제작용 기판 및 그 제작방법
    83.
    发明授权
    광도파로 제작용 기판 및 그 제작방법 有权
    光波导晶片及其形成方法

    公开(公告)号：KR100322126B1

    公开(公告)日：2002-02-04

    申请号：KR1019990001261

    申请日：1999-01-18

    Applicant: 삼성전자주식회사

    Inventor： 송영휘 ,  김태훈 ,  정선태

    IPC: G02B6/10

    CPC classification number: G02B6/13 ,  G02B6/105 ,  G02B6/132

    Abstract: 본발명은불순물조성변화를이용한도파로의변형및 잔류응력감소를통하여복굴절을제거한광도파로제작용기판및 그제작방밥에관한것으로, 이러한광도파로제작용기판은기판, 기판과인접한부분은불순물의함유량이증가되어형성되고, 코아층과의인접한부분은불순물의함량이조절되어코아층과의소정의굴절율차를갖도록형성된하부클래드층및 하부클래드층위에광도파로패턴이형성된코아층을포함함을특징으로한다. 본발명에의하면, 실리콘기판과인접한하부클래드층은불순물유량을증가시켜증착함으로써불순물함유량을증가시켜실리콘기판과의열팽창계수차이및 소결후기판냉각시하부클래드층의유리화온도와주변온도와의차를줄여실리콘기판의변형을막고더불어잔류응력을최소화시켜유도복굴절을제거할수 있다. 또한하부클래드층증착시불순물유량조절을통한하부클래드층의조성변화를이용하므로버퍼층을추가하는방법과는달리버퍼층증착및 소결공정이필요하지않는장점이있다.

    유도 결합 플라즈마 식각을 이용한 다공성 막 제조방법
    84.
    发明授权
    유도 결합 플라즈마 식각을 이용한 다공성 막 제조방법 失效
    使用ICP蚀刻技术的多孔膜的制造方法

    公开(公告)号：KR100265796B1

    公开(公告)日：2000-10-02

    申请号：KR1019980019035

    申请日：1998-05-26

    Applicant: 삼성전자주식회사

    Inventor： 정선태 ,  김동수 ,  송형승

    IPC: H01L21/3065

    Abstract: PURPOSE: A method for manufacturing a porous film using inductively coupled plasma etching is provided to maintain mechanical intensity high and to control simultaneously porosity, size, distribution, and direction by using an inductively coupled plasma etching. CONSTITUTION: A film(222) is formed on a substrate(221). A mask pattern is formed on predetermined position of the film(222) formed on the substrate(221) in order to generate fine holes. A cathode electrode is applied to the substrate(221) formed with the mask pattern. The first RF(Radio Frequency) power is applied to the cathode electrode. The second RF power is applied to an inductively coupled plasma coil. A reaction gas is injected into a chamber in order to generate plasma(223). The exposed film(222) is etched.

    Abstract translation: 目的：提供使用电感耦合等离子体蚀刻制造多孔膜的方法，以通过使用电感耦合等离子体蚀刻来保持机械强度高并且同时控制孔隙率，尺寸，分布和方向。 构成：在基板（221）上形成膜（222）。 在形成在基板（221）上的膜（222）的预定位置上形成掩模图案，以便产生细孔。 将阴极施加到形成有掩模图案的基板（221）上。 将第一RF（射频）功率施加到阴极。 第二RF功率被施加到电感耦合等离子体线圈。 将反应气体注入室以产生等离子体（223）。 暴露的膜（222）被蚀刻。

    광도파로 제작용 기판 및 그 제작방법
    85.
    发明公开
    광도파로 제작용 기판 및 그 제작방법 有权
    用于制造光波导的基板及其制造方法

    公开(公告)号：KR1020000051029A

    公开(公告)日：2000-08-16

    申请号：KR1019990001261

    申请日：1999-01-18

    Applicant: 삼성전자주식회사

    Inventor： 송영휘 ,  김태훈 ,  정선태

    IPC: G02B6/10

    CPC classification number: G02B6/13 ,  G02B6/105 ,  G02B6/132

    Abstract: PURPOSE: An optical waveguide having linear layers through which optical signals pass and its anufacturing method are provided to remove a birefringence by changing impurities on a cladding layer. CONSTITUTION: A substrate comprises a SI substrate layer(210), a core layer(230), and a cladding layer(220). A core layer is formed on a lower cladding layer where an optical waveguide is formed. A cladding layer formed on a planar substrate layer contains impurities to decrease a difference of a thermal expansion coefficient between a SI substrate and a cladding layer. A cladding layer has a different refractive index between an upper part and a lower part by injecting impurities into a SI substrate. As decreasing a sintering temperature during an inject on process, it prevents a substrate deformation and decreases a residual stress.

    Abstract translation: 目的：提供光信号通过的具有线性层的光波导及其制造方法，以通过改变包层上的杂质来去除双折射。 构成：衬底包括SI衬底层（210），芯层（230）和包覆层（220）。 芯层形成在形成有光波导的下包层上。 形成在平坦基板层上的包覆层含有杂质，以减少SI基板和包覆层之间的热膨胀系数的差异。 通过将杂质注入到SI基板中，包层在上部和下部之间具有不同的折射率。 由于在注射过程中降低烧结温度，因此可防止基材变形并降低残余应力。

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