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公开(公告)号：KR1020100089022A
公开(公告)日：2010-08-11
申请号：KR1020100006475
申请日：2010-01-25
Applicant: 삼성전자주식회사
IPC: H01L27/115 , G11C16/00
CPC classification number: G11C16/0483 , G11C16/10 , G11C16/26 , H01L23/5226 , H01L27/11524 , H01L27/11551 , H01L27/11556 , H01L27/11582 , H01L29/66825 , H01L29/7881 , H01L21/823425
Abstract: PURPOSE: The vertical structure of a non-volatile memory device is provided to reduce the length of the gate of ground-selection gate electrodes by forming two or more string-selection transistors. CONSTITUTION: A semiconductor pillar is vertically expanded to the upper side of a substrate. A NAND string(NS) is vertically expanded to the upper side of the substrate along the sidewall of the semiconductor pillar. The NAND string includes first selection transistors(TG1, TG2) which are adjacently arranged on one side of plurality of memory cells(MC). A plurality of word-lines(WL0 to WLn) is combined to a plurality of memory cells of the NAND string. A first selection line is commonly combined to the first selection transistors of the NAND string.
Abstract translation: 目的：提供非易失性存储器件的垂直结构，以通过形成两个或更多个串选择晶体管来减小接地选择栅电极的栅极的长度。 构成：半导体柱垂直扩展到基板的上侧。 NAND串（NS）沿着半导体柱的侧壁垂直扩展到衬底的上侧。 NAND串包括相邻地布置在多个存储单元（MC）的一侧上的第一选择晶体管（TG1，TG2）。 多个字线（WL0〜WLn）组合到NAND串的多个存储单元。 第一选择线通常组合到NAND串的第一选择晶体管。
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公开(公告)号：KR1020100088829A
公开(公告)日：2010-08-11
申请号：KR1020090007945
申请日：2009-02-02
Applicant: 삼성전자주식회사
IPC: H01L21/336 , H01L29/78
CPC classification number: H01L27/11551 , G11C16/0483 , H01L27/11556 , H01L29/66825 , H01L29/7881 , H01L21/02579
Abstract: PURPOSE: A three dimensional memory device is provided to improve the reliability by reducing the malfunction of the device and the distribution of a current due to a resistance of a vertical channel structure and a common source line. CONSTITUTION: Vertical channel structures are arranged on a semiconductor substrate in a matrix shape. The vertical channel structures form a memory cell string(Ms). The memory cell string includes memory cells(Mmn), a ground selection transistor(GSTmna), and an auxiliary ground selection transistor(GSTmnb). The gates of the ground selection transistor and the auxiliary ground selection transistor are shared. The gates of the memory cells are expanded to a first direction in order to form word lines(WLn,1, WLn,2). A common source line(CSL) is formed between the vertical channel structures.
Abstract translation: 目的：提供三维存储器件，通过减少器件的故障和由于垂直沟道结构和公共源极线的电阻引起的电流分布来提高可靠性。 构成：垂直沟道结构以矩阵形状布置在半导体衬底上。 垂直通道结构形成存储单元串（Ms）。 存储单元串包括存储单元（Mmn），接地选择晶体管（GSTmna）和辅助地选择晶体管（GSTmnb）。 接地选择晶体管和辅助接地选择晶体管的栅极共享。 为了形成字线（WLn，1，WLn，2），存储单元的栅极扩展到第一方向。 在垂直通道结构之间形成公共源极线（CSL）。
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公开(公告)号：KR100971552B1
公开(公告)日：2010-07-21
申请号：KR1020080069606
申请日：2008-07-17
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L27/11578 , H01L27/11524 , H01L27/11551 , H02J2007/0049
Abstract: 본 발명은 플래시 기억 장치 및 그 동작 방법을 제공한다. 이 장치는 하부 반도체층, 하부 반도체층에 형성된 하부 웰 영역, 및 하부 웰 영역 상에 형성된 복수의 하부 메모리 셀 유닛들을 포함하는 하부 메모리 셀 어레이, 하부 메모리 셀 에레이 상에 배치되고, 상부 반도체층, 상부 반도체층에 형성된 상부 웰 영역, 및 상부 웰 영역 상에 형성된 복수의 상부 메모리 셀 유닛들을 포함하는 상부 메모리 셀 어레이, 및 상부 메모리 셀 어레이 상에 배치되고 하부 웰 바이어스 라인 및 상부 웰 바이어스 라인을 포함하는 웰 바이러스 라인을 포함한다. 하부 웰 바이어스 라인은 하부 웰 영역과 전기적으로 접속하고, 상부 웰 바이어스 라인은 상부 웰 영역과 전기적으로 접속한다.
웰 스트래핑, 복층 구조, 바디 바이어스, 플래시 메모리Abstract translation: 公开了闪存装置和操作方法。 闪速存储器件包括底部存储单元阵列和设置在底部存储单元阵列上的顶部存储器单元阵列。 底部存储单元阵列包括底部半导体层，底部阱以及多个底部存储单元单元。 顶部存储单元阵列包括顶部半导体层，顶部阱以及多个顶部存储单元。 井顶偏置线设置在顶部存储单元阵列上，并且包括底部阱偏置线和顶部阱偏置线。底部阱偏置线电连接到底部阱，并且顶部阱偏置线电连接到 顶好
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公开(公告)号：KR1020100008960A
公开(公告)日：2010-01-27
申请号：KR1020080069606
申请日：2008-07-17
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L27/11578 , H01L27/11524 , H01L27/11551 , H02J2007/0049 , H01L21/823493 , H01L27/0688
Abstract: PURPOSE: A flash memory device including a 3D cell structure and an operation method thereof are provided to achieve high integration by independently performing erasure and program of lower and upper memory cells. CONSTITUTION: A lower memory cell array(10) comprises a lower semiconductor layer, a lower well domain formed on the lower semiconductor layer, and a plurality of lower memory cell units formed on the lower well domain. An upper memory cell array(20) is arranged on the lower memory cell array, and comprises an upper semiconductor layer, an upper well domain formed in the upper semiconductor layer, and a plurality of upper memory cell units formed on the upper well domain. A well bias line(32) comprising a lower well bias line and an upper well bias line is arranged on the upper memory cell array. The lower well bias line is electrically connected to the lower well domain and the upper well bias line is electrically connected to the upper well domain.
Abstract translation: 目的：提供一种包括3D单元结构及其操作方法的闪速存储器件，以通过独立执行上下存储单元的擦除和程序来实现高集成度。 构成：下部存储单元阵列（10）包括下半导体层，形成在下半导体层上的下阱区和形成在下阱结构域上的多个下存储单元单元。 上存储单元阵列（20）布置在下存储单元阵列上，并且包括上半导体层，形成在上半导体层中的上阱区和形成在上阱区上的多个上存储单元单元。 包括下阱偏置线和上阱偏置线的阱偏置线（32）布置在上存储单元阵列上。 下阱偏压线电连接到下阱区，上阱偏压线电连接到上阱结构域。
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公开(公告)号：KR1020090056598A
公开(公告)日：2009-06-03
申请号：KR1020070123819
申请日：2007-11-30
Applicant: 삼성전자주식회사
IPC: G10L21/0208 , G10L15/20 , H04R3/02 , H04R1/20
CPC classification number: H04R3/005 , G10L21/0208 , G10L2021/02166 , H04R2430/03 , H04R2430/20 , H04R2430/25
Abstract: A method and a device for removing noise from a sound signal inputted through a microphone are provided to minimize signal distortion generated in a low frequency band in a digital sound obtaining device, which is equipped with a small microphone array. A filter unit(210) filters a high frequency signal higher than a reference frequency and a lower frequency signal lower than the reference frequency from input signals obtained through a microphone array. A target high frequency signal generator(221) obtains a target high frequency signal by removing noise from the filtered high frequency signal. A target low frequency signal generator(222) obtains a target low frequency signal by removing the noise, which has a phase difference from a target signal, from the filtered low frequency signal. A signal composer(230) obtains a sound signal excluding the noise by composing the target high and low frequency signal.
Abstract translation: 提供一种用于从通过麦克风输入的声音信号中去除噪声的方法和装置，以最小化配备有小麦克风阵列的数字声音获取装置中的低频带中产生的信号失真。 滤波器单元（210）从通过麦克风阵列获得的输入信号中滤除高于基准频率的高频信号和低于基准频率的较低频率信号。 目标高频信号发生器（221）通过从滤波的高频信号中去除噪声来获得目标高频信号。 目标低频信号发生器（222）通过从经滤波的低频信号中去除与目标信号具有相位差的噪声来获得目标低频信号。 信号编辑器（230）通过组合目标高低频信号来获得不包括噪声的声音信号。
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Patent Agency Ranking
公开(公告)号：KR1020090037692A
公开(公告)日：2009-04-16
申请号：KR1020070103166
申请日：2007-10-12
Applicant: 삼성전자주식회사
IPC: G10L21/0272 , H04R1/04 , G10L15/20
CPC classification number: H04R3/005
Abstract: A method and an apparatus for extracting a target sound signal from a mixed sound are provided to clearly separate a specific sound signal from the mixed sound including a plurality of sounds. A microphone array(210) obtains sound signals outputted from a plurality of sound sources in a mixed sound type. A beam forming unit(220) improves an amplitude by assigning proper weight to each received signal. The beam forming unit functions as a filter which spatially reduces noise. A phase difference between the signals inputted to each microphone and an array pattern. An emphasizing signal beam forming unit increases directivity sensitivity about a specific target sound source. A sound source signal is inputted to the microphone array. An adder adds signals in which difference is generated to the time of arrival.
Abstract translation: 提供一种用于从混合声音提取目标声音信号的方法和装置，用于将特定声音信号与包括多个声音的混合声音清楚地分离。 麦克风阵列（210）获得从混合声音类型的多个声源输出的声音信号。 波束形成单元（220）通过为每个接收到的信号分配适当的权重来提高振幅。 波束形成单元用作空间上降低噪声的滤波器。 输入到每个麦克风的信号与阵列图案之间的相位差。 强调信号光束形成单元增加关于特定目标声源的指向性灵敏度。 声源信号被输入到麦克风阵列。 加法器将产生差分的信号加到到达时间。
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公开(公告)号：KR100891963B1
公开(公告)日：2009-04-08
申请号：KR1020070011085
申请日：2007-02-02
Applicant: 삼성전자주식회사
IPC: H01L23/12 , H01L21/8242
CPC classification number: H01L27/10802 , H01L21/8221 , H01L27/0688 , H01L27/108 , H01L27/10844 , H01L27/1203 , H01L29/7841
Abstract: 단일 트랜지스터 디램 소자 및 그 형성방법이 제공된다. 상기 단일 트랜지스터 디램 소자는 절연막을 포함하는 기판, 상기 절연막 상에 제공되며, 상기 절연막에 접촉하는 제 1 소오스 영역 및 제 1 드레인 영역, 상기 제 1 소오스 영역 및 상기 제 1 드레인 영역 사이의 제 1 플로팅 바디를 포함하는 제 1 반도체층, 상기 제 1 플로팅 바디를 덮는 제 1 게이트 패턴, 상기 제 1 게이트 패턴을 덮는 제 1 층간 절연막, 상기 제 1 층간 절연막 상에 제공되며, 상기 제 1 층간 절연막에 접촉하는 제 2 소오스 영역 및 제 2 드레인 영역, 상기 제 2 소오스 영역 및 상기 제 2 드레인 영역 사이의 제 2 플로팅 바디를 포함하는 제 2 반도체층 및 상기 제 2 플로팅 바디를 덮는 제 2 게이트 패턴을 포함한다.
단일 트랜지스터 디램 소자, 플로팅 바디-
公开(公告)号：KR1020080079869A
公开(公告)日：2008-09-02
申请号：KR1020070020431
申请日：2007-02-28
Applicant: 삼성전자주식회사
IPC: H01S3/0941 , H01L33/00
Abstract: A multi-layer semiconductor device having laser devices and a manufacturing method thereof are provided to implement semiconductor discrete device and the laser devices on a single chip by transmitting electrical signals of the semiconductor discrete devices to the laser devices through wiring inside the chip. A multi-layer semiconductor device having laser devices includes lower discrete devices, a lower insulating layer(9), a laser waveguide(17), semiconductor electrodes(15), and a light emitting diode(21'). The lower discrete devices are arranged on a semiconductor substrate(1). The lower insulating layer covers the semiconductor substrate having the lower discrete devices. The laser waveguide is arranged on the lower insulating layer. The semiconductor electrodes are arranged at both sides of the laser waveguide. The light emitting diode is arranged on the laser waveguide and the semiconductor electrodes, and one end thereof is electrically connected to the lower discrete devices.
Abstract translation: 提供具有激光器件的多层半导体器件及其制造方法，通过将半导体分立器件的电信号通过芯片内部的布线传输到激光器件，从而在单个芯片上实现半导体分立器件和激光器件。 具有激光器件的多层半导体器件包括下分立器件，下绝缘层（9），激光波导（17），半导体电极（15）和发光二极管（21'）。 下部分立器件布置在半导体衬底（1）上。 下绝缘层覆盖具有较低分立器件的半导体衬底。 激光波导布置在下绝缘层上。 半导体电极布置在激光波导的两侧。 发光二极管布置在激光波导和半导体电极上，其一端电连接到下分立器件。
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公开(公告)号：KR1020080070458A
公开(公告)日：2008-07-30
申请号：KR1020070008605
申请日：2007-01-26
Applicant: 삼성전자주식회사
Inventor： 정재훈
CPC classification number: H01L51/529 , H01L51/5237 , H05K7/20409
Abstract: An organic light emitting diode display is provided to discharge heat of a display panel to the outside by transmitting the heat of the display panel to a lower receiving vessel with a heat radiating fin. An organic light emitting diode display(1) includes an insulating substrate, an organic layer, a display panel(2), a heat pad(4), a lower receiving vessel(5), and a heat radiating fin(6). The organic layer is formed on the insulating substrate to emit light. The display panel is arranged on the insulating substrate and has first and second electrodes for supplying a hole and an electron to the organic layer. The heat pad is located on a top or bottom of the display panel to receive heat from the display panel. The lower receiving vessel is adjacent to the heat pad to receive the heat from the heat pad. The heat radiating fin is protruded from the lower receiving vessel to send the heat of the lower receiving vessel to the outside.
Abstract translation: 提供一种有机发光二极管显示器，用于通过用散热片将显示面板的热量传递到下部接收容器来将显示面板的热量排出到外部。 有机发光二极管显示器（1）包括绝缘基板，有机层，显示面板（2），加热垫（4），下接收容器（5）和散热片（6）。 在绝缘基板上形成有机层发光。 显示面板布置在绝缘基板上，并具有用于向有机层提供空穴和电子的第一和第二电极。 加热垫位于显示面板的顶部或底部，以从显示面板接收热量。 下接收容器与加热垫相邻以接收来自加热垫的热量。 散热片从下部接收容器突出，将下部容纳容器的热量送至外部。
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公开(公告)号：KR1020080056069A
公开(公告)日：2008-06-20
申请号：KR1020060128941
申请日：2006-12-15
Applicant: 삼성전자주식회사
Abstract: An apparatus of transforming a speech feature vector and a method thereof are provided to acquire robust feature output values by extracting a feature vector necessary for speech recognition from a speech signal and transforming the extracted feature vector using an auto-association neutral network. An apparatus of transforming a speech feature vector includes a feature extracting unit(300), a feature transforming unit(310), a post processing unit, and a delta feature extracting unit. The feature extracting unit extracts a feature vector necessary for speech recognition from a speech signal. The feature transforming unit transforms the extracted feature vector using auto-association neutral network. A hidden layer of the auto-association neutral network has at least one neuron. The post processing unit an average or maximum value of output values of the extracted hidden layer when the hidden layer has at least two neurons. The delta feature extracting unit extracts a delta feature of the transformed feature vector.
Abstract translation: 提供一种变换语音特征向量的装置及其方法，用于通过从语音信号中提取语音识别所必需的特征向量并使用自动关联中性网络变换所提取的特征向量来获取鲁棒的特征输出值。 变换语音特征向量的装置包括特征提取单元（300），特征变换单元（310），后处理单元和增量特征提取单元。 特征提取单元从语音信号中提取语音识别所需的特征矢量。 特征变换单元使用自动关联中性网络对提取的特征向量进行变换。 自动关联中性网络的隐藏层至少有一个神经元。 后处理单元，当隐层具有至少两个神经元时，所提取的隐藏层的输出值的平均值或最大值。 增量特征提取单元提取变换特征向量的增量特征。
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