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公开(公告)号：KR1020100108078A
公开(公告)日：2010-10-06
申请号：KR1020090026548
申请日：2009-03-27
Applicant: 연세대학교 산학협력단
IPC: H01L29/78 , H01L21/336 , B82B3/00 , B82Y10/00
CPC classification number: H01L21/02606 , H01L21/02225 , H01L27/3262 , H01L29/0669 , H01L29/41725 , H01L29/42312 , H01L29/4232 , H01L29/4908
Abstract: PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the efficiency of a semiconductor device by executing a surface treatment process to a carbon nano tube. CONSTITUTION: A gate electrode(210) is formed on a substrate(200). A gate insulating layer(220) is formed on the substrate that includes the gate electrode. A source and a drain electrode(230,230') are formed on the upper part of the gate insulating layer. An active layer(240) is formed to be connected to the source and the drain electrode. The active layer includes a carbon nano tube which is surface-treated with a hydroxide ion-contained material.
Abstract translation: 目的：提供半导体器件及其制造方法，以通过对碳纳米管执行表面处理工艺来提高半导体器件的效率。 构成：在基板（200）上形成栅电极（210）。 在包括栅电极的基板上形成栅极绝缘层（220）。 源极和漏极（230,230'）形成在栅极绝缘层的上部。 有源层（240）被形成为连接到源电极和漏电极。 活性层包括用含氢氧离子的材料进行表面处理的碳纳米管。
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公开(公告)号：KR1020100090556A
公开(公告)日：2010-08-16
申请号：KR1020090009903
申请日：2009-02-06
Applicant: 연세대학교 산학협력단
Abstract: PURPOSE: A manufacturing method of an oxide nanostructure using a sol-gel process and a porous nanostructure is provided to effectively manufacture a multi-component metal oxide. CONSTITUTION: A manufacturing method of an oxide nanostructure using a sol-gel process and a porous nanostructure comprises the following steps: surface-processing a substrate(100) including the porous nanostructure(P); inserting oxidized compound sol(200) inside the porous nanostructure; drying and heating the oxidized compound sol to change the sol into oxidized compound gel for forming an oxide nanostructure inside the porous nanostructure; and separating the oxide nanostructure with the porous nanostructure.
Abstract translation: 目的：提供使用溶胶 - 凝胶法和多孔纳米结构的氧化物纳米结构的制造方法，以有效地制造多组分金属氧化物。 构成：使用溶胶 - 凝胶法和多孔纳米结构的氧化物纳米结构的制造方法包括以下步骤：对包含多孔纳米结构（P）的基板（100）进行表面处理; 将氧化的化合物溶胶（200）插入多孔纳米结构内; 干燥和加热氧化的化合物溶胶，将溶胶变成氧化的化合物凝胶，以在多孔纳米结构内形成氧化物纳米结构; 并用多孔纳米结构分离氧化物纳米结构。
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公开(公告)号：KR1020100090555A
公开(公告)日：2010-08-16
申请号：KR1020090009902
申请日：2009-02-06
Applicant: 연세대학교 산학협력단
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/42312 , H01L21/02068 , H01L21/02225 , H01L29/41725 , H01L29/4232
Abstract: PURPOSE: A method for manufacturing the gate insulating film and the gate electrode of a thin film transistor is provided to cost effectively perform manufacturing processes using a self-aligning effect. CONSTITUTION: An active layer(130) is formed on a substrate including a source electrode and a drain electrode. A polysilane thin film is formed on the active layer using a liquid manufacturing process. A gate metal layer is formed on the polysilane thin film. The polysilane thin film is converted into a gate insulating film(140') by radiating ultraviolet ray toward the lower side of the substrate. The polysilane thin film is eliminated excluding the converted gate insulating film through a thermal treatment process. The gate metal layer is patterned to form a gate electrode(150').
Abstract translation: 目的：提供一种用于制造薄膜晶体管的栅极绝缘膜和栅电极的方法，以便使用自对准效应来成本有效地执行制造工艺。 构成：在包括源电极和漏电极的基板上形成有源层（130）。 使用液体制造工艺在活性层上形成聚硅烷薄膜。 在聚硅烷薄膜上形成栅极金属层。 通过向衬底的下侧辐射紫外线，将聚硅烷薄膜转变成栅极绝缘膜（140'）。 通过热处理工艺除去转化的栅极绝缘膜之外，除去聚硅烷薄膜。 图案化栅极金属层以形成栅电极（150'）。
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公开(公告)号：KR1020100072977A
公开(公告)日：2010-07-01
申请号：KR1020080131550
申请日：2008-12-22
Applicant: 연세대학교 산학협력단
IPC: H01L21/20 , H01L21/324 , H01L21/027 , H01L29/786
CPC classification number: H01L21/02565 , G03F7/2012
Abstract: PURPOSE: An oxide semiconductor thin film and a manufacturing method thereof are provided to protect direct heat transmission to a substrate by using a laser when a post annealing is executed during the formation of an oxide semiconductor thin film. CONSTITUTION: An oxide semiconductor aqueous solution(110) by a liquid manufacturing process is formed on a substrate(100). An oxide semiconductor thin film by annealing is formed by irradiating a laser beam to the oxide semiconductor aqueous solution. At least two regions(P1,P2) are formed by using a half-tone mask when the laser beam is irradiated. The oxide semiconductor aqueous solution is formed by using a Sol-GEL method.
Abstract translation: 目的：提供氧化物半导体薄膜及其制造方法，以在形成氧化物半导体薄膜时进行后退火时，通过使用激光来保护对基板的直接热传递。 构成：在基板（100）上形成通过液体制造工艺的氧化物半导体水溶液（110）。 通过将氧化物半导体水溶液照射激光来形成退火的氧化物半导体薄膜。 当照射激光束时，通过使用半色调掩模形成至少两个区域（P1，P2）。 通过使用Sol-GEL法形成氧化物半导体水溶液。
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公开(公告)号：KR100963084B1
公开(公告)日：2010-06-14
申请号：KR1020080042897
申请日：2008-05-08
Applicant: 연세대학교 산학협력단
IPC: H01L21/324 , G02F1/136 , B82Y30/00
Abstract: 본 발명은 반응열을 이용한 비정질 실리콘층의 결정화 방법에 관한 것으로, 상부에 비정질 실리콘층이 증착된 기판을 준비하는 단계와 상기 비정질 실리콘층 상부에 금속 입자 및 대응 산화물 입자의 혼합물을 도포 및 건조하여 반응성 발열물질층을 형성하는 단계를 포함하되, 상기 발열물질층을 점화하여, 온도에 의해 상기 비정질 실리콘층의 특성을 변경하여 결정화함으로써 고온의 열을 단시간에 낼 수 있는 효과가 있다.
테르밋 반응, 비정질 실리콘, 화학 반응, 결정화-
Patent Agency Ranking
公开(公告)号：KR100933503B1
公开(公告)日：2009-12-23
申请号：KR1020070107343
申请日：2007-10-24
Applicant: 연세대학교 산학협력단
IPC: H01L21/20
Abstract: A method of fabricating an amorphous silicon thin film is provided to reduce the number of a poly silicon polymerization processes by using a Wurtz-type reductive coupling. A silicon monomer is mixed in the organic solvent and a dissipative system is formed. A metallic catalyst is dispersed in the dissipative system and the polysilanes polymer is formed. The polysilanes polymer is filtered, and a poly silicon is separated. The poly silicon is dissolved in the organic solvent and the polysilanes liquid is formed. The polysilanes liquid is deposited on the substrate, and the deposited polysilanes liquid is irradiated with UV rays and an amorphous silicon thin film is formed.
Abstract translation: 提供一种制造非晶硅薄膜的方法，以通过使用Wurtz型还原耦合来减少多晶硅聚合工艺的数量。 硅单体在有机溶剂中混合并形成耗散体系。 金属催化剂分散在耗散体系中并形成聚硅烷聚合物。 将聚硅烷聚合物过滤，并分离多晶硅。 多晶硅溶解在有机溶剂中并形成聚硅烷液体。 将聚硅烷液体沉积在基板上，并且用紫外线照射沉积的聚硅烷液体并形成非晶硅薄膜。
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公开(公告)号：KR1020090117033A
公开(公告)日：2009-11-12
申请号：KR1020080042897
申请日：2008-05-08
Applicant: 연세대학교 산학협력단
IPC: H01L21/324 , G02F1/136 , B82Y30/00
CPC classification number: H01L21/324 , G02F1/136 , H01L21/02623 , H01L21/02667
Abstract: PURPOSE: A crystallization of an amorphous silicon is provided to reduce manufacturing costs and a time for crystallization by making the amorphous silicon layer crystallization in short time by using high heat. CONSTITUTION: In a crystallization of an amorphous silicon, an amorphous silicon layer is deposited on a substrate(100). A reactivity heat material layer(130) is formed by coating a mixture of the metal particle and correspondence oxide particle on the amorphous silicon layer(120) and drying it. A characteristic of the amorphous silicon layer is changed by exothermic reaction, and the metal particle is aluminium powder and has a size of 50nm or 2um. A pollution preventing film is formed on the amorphous silicon layer, and the exothermic reaction is generated at a partial domain of the top of the amorphous silicon layer.
Abstract translation: 目的：提供非晶硅的结晶以通过使用高热量在短时间内使非晶硅层结晶而降低制造成本和结晶时间。 构成：在非晶硅的结晶中，非晶硅层沉积在基底（100）上。 通过在非晶硅层（120）上涂覆金属颗粒和对应氧化物颗粒的混合物并将其干燥来形成反应性热物质层（130）。 通过放热反应来改变非晶硅层的特性，金属颗粒是铝粉末，其尺寸为50nm或2um。 在非晶硅层上形成污染防止膜，在非晶硅层的顶部的部分区域产生放热反应。
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公开(公告)号：KR1020080099732A
公开(公告)日：2008-11-13
申请号：KR1020070045662
申请日：2007-05-10
Applicant: 연세대학교 산학협력단
IPC: G02F1/167
CPC classification number: G02F1/167 , B82Y20/00 , G02F1/133305 , G02F1/133514 , G02F2001/1676 , G02F2202/36
Abstract: A flexible electrophoretic display is provided to implement a high reflection rate and clear multi-color gray scale by using metal nano particles. An electronic paper display for expressing multi-color has the following configuration. A shading expression part(510) classifies the reflection or the penetration according to the unit area. An upper electrode(520) and a bottom electrode authorize the electric potential difference in the shading expression portion. A plurality of color particles(540) expresses the color at the upper part of the upper electrode. The electronic paper display, wherein the upper electrode consists of the transparent conductive material; and the light which is incident from outside is reflected with the color particle of the upper electrode top and the color of the electronic paper display is implemented.
Abstract translation: 提供柔性电泳显示器，通过使用金属纳米颗粒实现高反射率和清晰的多色灰度级。 用于表示多色的电子纸显示器具有以下配置。 阴影表达部分（510）根据单位面积对反射或穿透进行分类。 上电极（520）和底电极授权阴影表达部分中的电位差。 多个着色粒子（540）表示上部电极上部的颜色。 电子纸显示器，其中上电极由透明导电材料组成; 并且从外部入射的光被上电极顶部的着色颗粒反射，并且实现电子纸显示器的颜色。
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公开(公告)号：KR100844272B1
公开(公告)日：2008-07-07
申请号：KR1020070013777
申请日：2007-02-09
Applicant: 연세대학교 산학협력단
IPC: H01L21/20
CPC classification number: H01L21/187
Abstract: A method for attaching a single crystalline silicon layer to a supporting substrate and a method for manufacturing a supporting substrate including the single crystalline silicon layer are provided to secure various process variables by performing a thermal process. A substrate(20) includes a single crystalline silicon layer(10a,10b) and a division layer(14) for dividing the single crystalline silicon layer into two regions. The single crystalline silicon layer comes in contact with a transparent supporting substrate. The light is illuminated to penetrate the transparent supporting substrate. A bonding layer(22) is formed on one surface of opposing surfaces of the transparent supporting substrate and the single crystalline silicon layer. The bonding layer is melted by the illuminated light so that the single crystalline silicon layer is attached to the transparent supporting substrate.
Abstract translation: 提供将单晶硅层附着在支撑基板上的方法以及包括单晶硅层的支撑基板的制造方法，以通过进行热处理来确保各种工艺变量。 基板（20）包括单晶硅层（10a，10b）和用于将单晶硅层分成两个区域的分割层（14）。 单晶硅层与透明支撑基板接触。 灯被照亮以穿透透明的支撑衬底。 在透明支撑衬底和单晶硅层的相对表面的一个表面上形成结合层（22）。 接合层通过照射光熔化，使得单晶硅层附着到透明支撑衬底上。
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