Abstract:
PURPOSE: A manufacturing method for a CIGS(copper indium gallium diselenide) thin film having an uniform Ga distribution are provided to improve efficiency of a solar cell by minimizing a segregation phenomenon in the CIGS thin film. CONSTITUTION: A Cu-In-Ga-Se precursor thin film including a selenide compound having a covalent bond structure is formed on a substrate. The precursor thin film is heat-treated in selenization. A formation method of the precursor thin film is a deposition method by a sputtering method or a thermal evaporation. The sputtering method is performed by containing a target including selenium.
Abstract:
PURPOSE: A method for manufacturing a CIS-based thin film is provided to obtain high efficiency using a CIS-based compound thin film as a light absorption layer of a thin film solar cell. CONSTITUTION: CIS-based compound nanoparticles are manufactured. The CIS-based compound nanoparticles are CIS compound nanoparticles, CIGS compound nanoparticles, or CZTS compound nanoparticles. Slurry is manufactured by mixing the CIS-based compound nanoparticles, a chelating agent, and solvents. A CIS-based compound thin film is formed by coating the CIS-based compound slurry. The CIS-based compound thin film is thermally processed.
Abstract:
PURPOSE: A method for manufacturing a CIGSe/CISe thin film by the selenization of CIGS/CIS nano particles is provided to improve the efficiency of a solar cell by inducing the high densification of a CIGSe thin film due to lattice expansion. CONSTITUTION: Cu-In-Ga-S or Cu-In-S compound nano particles that are precursors are manufactured(S1). Slurry including precursor nano particles is manufactured(S2). A CIGS or CIS precursor thin film is formed by coating a substrate with the slurry(S3). The precursor thin film is dried(S4). The precursor thin film is thermally processed using vapor selenium(S5). [Reference numerals] (AA) Start; (BB) Is it a desirable thickness?; (CC) End; (S1) Manufacturing CIGS or CIS nanoparticles; (S2) Manufacturing CIGS or CIS nanoparticles based slurry; (S3) Coating slurry with a non-vacuum state; (S4) Drying; (S5) Thermal process with selenization and high temperature
Abstract:
PURPOSE: A method for manufacturing a CIS based compound thin film using a rapid thermal process and a method for manufacturing a thin film solar cell using the CIS based compound thin film are provided to improve the efficiency of a light absorbing layer by increasing the crystallization of the CIS based compound thin film. CONSTITUTION: A CIS based compound thin film is formed on a substrate. A thermal selenization process of the CIS based compound thin film is performed by using a rapid thermal process. The CIS based compound thin film includes a CIS compound thin film, a CIGS compound thin film, or CZTS compound thin film. Se vapor is produced by heating Se metal. Se is vacuously deposited on the CIS based compound thin film.
Abstract:
본 발명은 태양전지 광흡수층용 CIS계 화합물 박막 제조장치에 관한 것으로, 더 상세하게는 파이로미터를 이용하여 진공증착에 의해 박막이 형성되는 기판의 온도를 측정하도록 하되 상기 파이로미터를 밀폐된 히팅수단 몸체의 내부에 장착하여 기판 후면의 온도를 측정하도록 함으로써 증발되는 기체의 간섭없이 정확한 측정이 가능하도록 한 것이다. 또한, 비접촉에 의해 기판의 온도를 측정함으로 접촉에 따른 기판의 손상과 열손실을 방지할 수 있어 균일한 박막의 형성이 가능하도록 하는 태양전지 광흡수층용 CIS계 화합물 박막 제조장치에 관한 것이다. 본 발명은 내측하부에 Cu,In,Ga,Se등의 원소를 내포하는 보트나 이퓨젼셀인 증발원이 설치된 진공챔버와, 상기 진공챔버의 내부에 장착되어 진공챔버의 증발물질이 내입되는 것을 방지하는 몸체와 상기 몸체의 하부면에 장착되어 기판을 안치하는 트레이와 상기 기판에 열을 가하는 열원을 구비한 히팅수단과, 상기 트레이에 안치되는 기판의 온도를 측정하는 기판온도측정장치와, 상기 기판온도측정장치로부터 측정된 신호를 입력받는 제어부를 포함하여 구성된 태양전지 광흡수층용 CIS계 화합물 박막 제조장치에 있어서, 상기 기판온도측정장치는 히팅수단의 몸체 내에 장착되어 기판 후면의 온도를 측정하는 파이로미터인 것을 특징으로 한다. 또한, 상기 히팅수단의 열원은 환형으로 구성하고, 중심에는 온도측정통공을 형성하여 파이로미터에서 광조사와 반사된 광의 입사가 이루어지도록 할 수 있다. CIS계 태양전지, 기판, 온도측정, 박막, 파이로미터