Abstract:
PURPOSE: A sensor apparatus for measuring neutrons, a system including the same and a method for measuring the neutrons using the same are provided to simultaneously measure thermal and fast neutrons using a thermal and a fast neutron measuring sensor including a layer of neutron conversion material. CONSTITUTION: A first sensor unit(110) measures the dose of fast neutron. A second sensor unit(120) measures the dose of thermal and fast neutrons. A neutron conversion unit(130) surrounds the second sensor unit and generates ions which causes electrical signal to the second sensor unit. The first sensor unit and the second sensor unit include a semiconductor. The neutron conversion unit is a layer of neutron conversion material.
Abstract:
본 발명은 하나의 동위원소 방사선원과 다수개의 방사선 검출기를 이용하여 물체의 두께를 여러 지점에서 비파괴, 비접촉식으로 측정하는 방법에 관한 것으로서, 더욱 상세하게는 단일 지점에 하나의 동위원소 방사선원을 구비하고, 방사선원으로부터 방출되어 물체를 투과한 방사선을 검출하기 위한 이온함 검출기를 다수의 측정 지점별로 각각 구비하되, 방사선원으로부터 먼 곳에 위치하여 입사되는 방사선량이 상대적으로 부족한 이온함 검출기에서도 방사선 검출에 필요한 최소전류값 이상의 전류 신호가 출력되도록 충진 기체의 종류, 부피 또는 압력을 이온함 검출기의 위치에 따라 다르게 설정함으로써, 요구되는 단일 방사선원의 양을 최소화하여 방사선 사용시의 안전성을 향상시키는 동시에, 방사선원의 유지·보수 비용을 절감할 수 있는 두께 측정 장치 및 방법에 관한 것이다. 본 발명에 따른 다면적 두께 측정 장치는, 대상물 측으로 방사선을 조사하는 단일 방사선원과; 대상물을 사이에 두고, 상기 방사선원의 반대측의 다수의 측정 지점에 각각 배치되어, 상기 방사선원으로부터 조사되어 대상물을 통과하는 방사선을 검출하는 다수개의 이온함 검출기;를 포함하여 구성되되, 상기 다수개의 이온함 검출기는, 상기 방사선원으로부터 상대적으로 먼 거리에 위치한 이온함 검출기의 내부에 충진되는 기체의 부피 또는 압력이 상기 방사선원으로부터 가까운 거리에 위치한 이온함 검출기의 내부에 충진되는 기체의 부피 또는 압력보다 더 크게 설정되어 구성되는 것을 특징으로 한다. 동위원소, 방사선원, 이온함 검출기, 다면적, 두께 측정, 안전성
Abstract:
An X-ray fluorescence spectrometer with a semiconductor cryogenic detector is provided to minimize the current leakage of the detector by making a specific x-rays detection unit to be semiconductor crystal and diode structure. An X-ray fluorescence spectrometer with a semiconductor cryogenic detector comprises an X-rays generating unit, a sample mounting unit, a specific x-rays detection unit(300), and an ingredient indication unit(500). The X-rays generating unit generates X-rays in order to float an energy level of the atom comprising the sample. X-rays generating unit makes X-rays incident in the sample. The sample mounting unit settles down the sample. The X-rays generated enters the sample mounting unit from X-rays generating unit. The specific X-rays detection unit detects the specific X-lays using a compound semiconductor in which the energy band gap is 0.5Ev or less. The ingredient indication unit analyzes the component of the sample using the specific x-rays. The result is indicated.
Abstract:
A nondestructive inspection device of an arbitrary shape structure using a radiation source is provided to reduce the time and cost for the inspection. A nondestructive inspection device of an arbitrary shape structure comprises: a sensor unit(110) sensing radiation, generating the optical signal; a radiation source(150) generating the radiation; a radiation source inducing unit(151) transferring the radiation source to the direction in which the sensor unit is extended; and a signal collecting unit(160) collecting the optical signal outputted from the sensor unit. The sensor unit extends to the specific direction with being closely to the surface of the structure. The sensor unit includes: a plurality of radiation detectors(111) generating the light corresponding to the incident radiation; and a plurality of light transmitting members(112) consisting of the transparent material.
Abstract:
An ionization chamber and a radiation measurement and radioactive isotope nuclide discriminating method using the ionization chamber are provided to measure radiation dose effectively and improve the accuracy of radioactive isotope nuclide discrimination by forming a coplanar anode electrode structure in the ion chamber. An ionization chamber(1) includes one coplanar anode electrode structure(10) and a cathode electrode(20). The coplanar anode electrode structure has a circular cross section and includes a first and a second electrode, wherein an insulating layer is formed lengthwise between the first and the second electrode in order to prevent electric connection between the electrode.
Abstract:
본 발명은 구조가 단순화되고 소형화가 가능한 방사선 검출용 이온 챔버에 관한 것이다. 본 발명의 실시형태는, 방사선이 입사하는 방사선 입사창을 갖고, 상기 방사선에 의하여 이온화되는 기체가 내부에 충진되며, 전기적으로 접지되는 케이스와, 상기 케이스의 내부에 상기 케이스와 소정 간격으로 이격되고, 상기 케이스와 전기적으로 절연되어 배치되는 신호전극과, 상기 신호전극과 상기 케이스 사이에 전기장을 형성하는 기설정된 전압을 상기 신호전극에 공급하는 신호전극연결부를 포함하는 방사선 검출용 이온 챔버를 제공한다. 본 발명에 따르면, 고전압 전극이 필요 없어 방사선 검출용 이온 챔버의 구조가 단순해지고 소형화되는 효과가 있다. 이온 챔버, 방사선, 두께 측정
Abstract:
A method for measuring neutron to detect distribution of nuclear materials and a device for the same are provided to detect the distribution of the nuclear materials two-dimensionally in a high level radioactive region. A device for measuring neutron to detect distribution of nuclear materials includes a neutron detection module(10), a detection module transfer device, a distribution determination device(40), and a distribution display device. The neutron detection module is installed long in a direction of any one axis. The detection module transfer device linearly moves the neutron detection module in a direction of another axis forming a predetermined angle with the one axis. The distribution determination device is connected to a signal line withdrawn from the neutron detection module and generates a display signal by analyzing a signal inputted through the signal line. And, the distribution display device displays the neutron detection state two-dimensionally by receiving a display signal of the distribution determination device.
Abstract:
PURPOSE: A method and apparatus is provided to simplify the structure of the apparatus and achieve uniformity in ion beam radiation, while controlling, in an accurate manner, an electric conductivity at the polymer surface. CONSTITUTION: A method is characterize in that ions which are accelerated by an energy of 50 to 100keV area are vacuumed and radiated so as to induce change of physical property of approximately 1 micron meter at the surface of polymer(PPO, MPPO). An apparatus comprises an adjustment control system(1), an ion duoplasmatron(3), deflection radiation system(4) and an ion beam radiation target system(8). The ion duoplasmatron is fed with gas from a gas bottle(13) by using the adjustment control system, and electric discharge is carried out within the ion duoplasmatron by adjusting the ion duoplasmatron power supply unit(2), thus generating a high density plasma. Subsequently, high voltage(50 to 100kV) is applied to thus-generated plasma so as to extract ions. The deflection radiation system is installed to follow the ion duoplasmatron, so as to radiate ion beams both in horizontal and vertical directions at the same time. An object for radiation is transferred by a transfer unit(7), and rotated by rotating units for uniform radiation at a given angle. An ion beam diagnosis unit(6) is used in adjusting the ion duoplasmatron and deflection radiation system so as to obtain uniform distribution of ion beam at a two-dimensional plane.