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公开(公告)号：KR101323319B1
公开(公告)日：2013-10-29
申请号：KR1020120002425
申请日：2012-01-09
Applicant: 한국전기연구원
Abstract: 본 발명은 은이 첨가된 비스무스-텔레리움-셀레니움계 열전재료의 제조방법에 관한 것으로, Bi-Te-Se계 열전재료에 은 원소를 도핑재로 첨가하고, 진공상태의 앰플에 장입하여 용융시키는 제1단계와; 상기 용융된 원료를 급냉시켜 잉곳을 제조하는 제2단계와; 상기 잉곳을 파쇄하여 도핑재가 첨가된 열전재료분말을 제조하는 제3단계와; 상기 도핑재가 첨가된 열전재료
분말을 열간 프레스 하는 제4단계와; 상기 제4단계를 거친 도핑재가 첨가된 열전재료를 컷팅시키는 제5단계;를 포함하여 구성되는 은이 첨가된 비스무스-텔레리움-셀레니움계 열전재료의 제조방법을 기술적 요지로 한다. 이에 따라, Bi-Te-Se계 열전 재료에 은 원소를 도핑재로 첨가하여 소정의 급냉 및 소결 과정 그리고 열처리를 거침으로써 그 열전특성이 향상되는 이점이 있다.-
公开(公告)号：KR1020130078478A
公开(公告)日：2013-07-10
申请号：KR1020110147442
申请日：2011-12-30
Applicant: 한국전기연구원
Abstract: PURPOSE: A manufacturing method for Te type thermal conduction materials is provided to improve thermal conduction characteristics by executing a rapid cooling process and a fixed thermal treatment process. CONSTITUTION: A raw doping material is fused in a furnace. The fused raw material is rapidly cooled. An ingot is manufactured by a rapid cooling process. Raw particles are generated by fracturing the ingot. The raw particle is sintered by a spark plasma sintering process.
Abstract translation: 目的：提供Te型导热材料的制造方法，通过执行快速冷却过程和固定热处理工艺来改善导热特性。 构成：原料掺杂材料熔化在炉中。 熔融原料快速冷却。 锭通过快速冷却工艺制造。 原始颗粒是通过压裂锭产生的。 原料颗粒通过放电等离子体烧结工艺进行烧结。
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公开(公告)号：KR1020120111133A
公开(公告)日：2012-10-10
申请号：KR1020110029457
申请日：2011-03-31
Applicant: 한국전기연구원
Abstract: PURPOSE: An Sb-doped GeTe thermoelectric materials and a manufacturing method thereof are provided to have a large Seebeck coefficient by performing a constant cooling process and a hot press or discharge plasma sintering process after doping Sb on GeTe. CONSTITUTION: Sb, Ge and Te are respectively weighed according to composition ratio. The weighed Sb, Ge and Te are melted in a vacuum ampoule. An ingot is manufactured by cooling the melted raw materials. Ge1-xSbxTe powder is manufactured by breaking the ingot. The Ge1-xSbxTe powder is wire-cut after a hot press or discharge plasma sintering process.
Abstract translation: 目的：通过在GeTe上掺杂Sb后进行恒定的冷却过程和热压或放电等离子体烧结工艺，提供Sb掺杂的GeTe热电材料及其制造方法以具有大的塞贝克系数。 构成：按照组成比分别称量Sb，Ge，Te。 称重的Sb，Ge和Te在真空安瓿中熔化。 通过冷却熔融的原料来制造锭。 Ge1-xSbxTe粉末是通过破碎锭来制造的。 Ge1-xSbxTe粉末在热压或放电等离子体烧结工艺后进行线切割。
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公开(公告)号：KR1020110079490A
公开(公告)日：2011-07-07
申请号：KR1020100099418
申请日：2010-10-12
Applicant: 한국전기연구원
Abstract: PURPOSE: A method for manufacturing TE system thermal conduction material forming a twin crystal by doping material addition and the thermal conduction material are provided to improve thermoelectric property by adding a doping material to the thermal conduction material and passing a heat treatment process and a rapid cooling process. CONSTITUTION: A Te system thermal conduction material and an added doping material raw material are measured respectively according to a composition ratio. The materials are put into an ample, which then is put into a furnace and is melted in the furnace. The melted raw materials are rapidly cooled and ingots are manufactured. The ingots are crushed, a hot press process is processed and a wire cutting process is performed. An ion radius of the doping material is 56-143 pm.
Abstract translation: 目的：提供通过掺杂材料添加形成双晶的TE系统热传导材料和导热材料的方法，以通过向导热材料添加掺杂材料并通过热处理工艺和快速冷却来提高热电性能 处理。 构成：根据组成比分别测量Te系热传导材料和添加的掺杂材料原料。 将材料放入一个充足的水中，然后将其放入炉中并在炉中熔化。 将熔化的原料快速冷却并制造锭。 锭被粉碎，热压加工进行处理，并进行切线加工。 掺杂材料的离子半径为56-143μm。
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Patent Agency Ranking
公开(公告)号：KR1020110031846A
公开(公告)日：2011-03-29
申请号：KR1020090089261
申请日：2009-09-21
Applicant: 한국전기연구원
CPC classification number: B82B3/0095 , B82B1/008 , B82Y40/00 , H01L35/16
Abstract: PURPOSE: A method for manufacturing a thermoelectric material containing nano-dots is provided to improve the thermoelectric performance of the thermoelectric material by uniformly forming nano-dots in the thermoelectric material through a rapid-cooling process. CONSTITUTION: A method for manufacturing a thermoelectric material containing nano-dots includes the following: Raw materials for a thermoelectric material are measured and washed. Each raw material is measured according to the composition ratio of the thermoelectric material. The measured raw materials are introduced into a quartz pipe. The inside of the quartz pipe is set into a vacuum state. The quartz pipe is hermetically sealed by filling a gas. The quartz pipe is input into a furnace, and a primary heating process is implemented. A slowing cooling process is implemented until temperature reaches to Tc. A secondary heating process is implemented at Tc. A rapid cooling process is implemented until the temperature reached to room temperature.
Abstract translation: 目的：提供一种制造含有纳米点的热电材料的方法，以通过快速冷却工艺在热电材料中均匀地形成纳米点来改善热电材料的热电性能。 构成：用于制造含有纳米点的热电材料的方法包括：测量和洗涤热电材料的原料。 每个原料根据热电材料的组成比来测量。 将测量的原料引入石英管中。 石英管的内部设置为真空状态。 石英管通过填充气体气密密封。 将石英管输入炉内，实施一次加热。 实施缓慢的冷却过程直到温度达到Tc。 在Tc处实施二次加热过程。 实施快速冷却过程直到温度达到室温。
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公开(公告)号：KR1020100133169A
公开(公告)日：2010-12-21
申请号：KR1020090051917
申请日：2009-06-11
Applicant: 한국전기연구원
Abstract: PURPOSE: A manufacturing method and a thermoelectric module thereof are provided to simplify a manufacturing process and to remove the welding problem between an alumina substrate and a copper electrode by removing the alumina substrate. CONSTITUTION: A thermoelectric module(100) has no an insulation substrate like an alumina plate where a bare type alumina plate or aluminum oxide are formed. The thickness of the alumina layer is approximately 50~500um. In a thermoelectric element(110), a p-type device and a n-type device are sequentially arranged. The alumina layer is formed on a copper plate(120).
Abstract translation: 目的：提供一种制造方法和热电模块，以简化制造过程，并通过去除氧化铝基底来消除氧化铝基底和铜电极之间的焊接问题。 构成：热电模块（100）不具有形成裸露型氧化铝板或氧化铝的氧化铝板的绝缘基板。 氧化铝层的厚度约为50〜500um。 在热电元件（110）中，依次配置p型器件和n型器件。 氧化铝层形成在铜板（120）上。
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公开(公告)号：KR100875479B1
公开(公告)日：2008-12-22
申请号：KR1020070056769
申请日：2007-06-11
Applicant: 한국전기연구원
IPC: H01L41/187 , H01L41/16
Abstract: A composition and a manufacturing method of lead-free piezoelectric ceramics are provided to improve the piezoelectricity characteristic by adding Li2CO3 and Na2CO3 to the ceramic composition. The manufacturing method of the lead-free piezoelectric ceramic composition comprises the following steps: the step that mixes and pulverizes the sample of the Na2CO3, K2CO3, Li2CO3, Nb2O5, and Ta2O5 and dries and burns; the step that re-burns the burned sample; the step for remixing, re-pulverizing the sample; the step for sintering and molding the dried sample. Li2CO3 and Na2CO3 are added to the ceramic composition of (NaxK0.95-xLi0.05)(Nb0.95Ta0.05)O3.
Abstract translation: 提供无铅压电陶瓷的组成和制造方法，以通过向陶瓷组合物中加入Li 2 CO 3和Na 2 CO 3来改善压电特性。 无铅压电陶瓷组合物的制备方法包括以下步骤：将Na 2 CO 3，K 2 CO 3，Li 2 CO 3，Nb 2 O 5和Ta 2 O 5的样品混合并粉碎并干燥和灼烧; 重烧烧伤样本的步骤; 重新混合，重新粉碎样品的步骤; 烧结和模制干燥样品的步骤。 （Na x K 0.95-x Li 0.05）（Nb 0.95 Ta 0.05）O 3的陶瓷组合物中添加Li 2 CO 3和Na 2 CO 3。
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公开(公告)号：KR100766991B1
公开(公告)日：2007-10-15
申请号：KR1020040112676
申请日：2004-12-27
Applicant: 한국전기연구원
IPC: H01L27/108
Abstract: 본 발명에 따른 박막 커패시터 유전체의 제조방법은, a) 기판상의 실리콘 타겟에 탄탈륨(Ta) 금속을 반응성 가스인 산소와 반응시켜 가면서 증착하는 단계와, b) 상기 증착으로 형성된 산화탄탈륨(TaO) 박막을 산소 분위기 및 진공 분위기에서 소정 온도로 열처리하는 단계; 및 c) 상기 열처리된 Ta
2 O
5-x 박막을 상온까지 냉각하는 단계를 포함한 박막 커패시터 유전체의 제조방법에 있어서: 상기 단계 b)에서의 산소 분위기 및 진공 분위기 조건은 산소 주입을 50cc/min로, 진공도를 10
-6 torr 이하로 유지하는 것을 특징으로 한다.
이와 같은 본 발명에 의하면, RF 스퍼터링 방법으로 Ta
2 O
5 박막을 증착시킨 후 결정화 온도 영역으로 알려진 650∼750 ℃의 산소 및 진공 분위기에서 어닐링 처리하여 커페시터 유전체 박막을 제조하므로, 상온에서 200 ℃ 까지 유전율 변화를 측정한 결과 매우 안정한 특성을 나타내고, 4.0 ×102 (kV/cm) 이하의 전계강도 영역에서 비교적 안정한 누설전류 특성을 나타내어 메모리나 박막 커패시터용 유전체로서 채용될 경우 양호한 특성을 갖는 제품의 생산이 가능해 진다.
커패시터, 유전체, 메모리-
公开(公告)号：KR100430671B1
公开(公告)日：2004-05-10
申请号：KR1020010055264
申请日：2001-09-08
Applicant: 한국전기연구원
IPC: H01F41/02
CPC classification number: H01F10/147
Abstract: PURPOSE: A method for manufacturing a FeTaN softmagnetism thin film for magnetic devices is provided to increase the magnetic anisotropy by adding a Ti lower layer on the FeTaN softmagnetism thin film. CONSTITUTION: A substrate is provided at a position apart from a Ti target in order to form a thin film. The Ti target and the substrate are used as a cathode and an anode, respectively. A predetermined DC(Direct Current) power is applied between the Ti target and the substrate, to thereby form a Ti lower layer on the substrate through sputtering. After changing the Ti target into a Fe target, a plurality of Ta leaflets are placed on a surface of the Fe target. Then, a predetermined DC power is applied between the Fe target and the substrate under a predetermined gas pressure to form a FeTaN thin film on the Ti lower layer. The FeTaN thin film is post-heated to form a fine crystal within the FeTaN thin film.
Abstract translation: 目的：提供一种用于制造用于磁性器件的FeTaN软磁薄膜的方法，以通过在FeTaN软磁薄膜上添加Ti下层来增加磁各向异性。 构成：为了形成薄膜，在离开Ti靶的位置提供衬底。 Ti靶和衬底分别用作阴极和阳极。 在Ti靶和衬底之间施加预定的DC（直流）功率，从而通过溅射在衬底上形成Ti下层。 在将Ti目标改变为Fe目标之后，将多个Ta小叶放置在Fe目标的表面上。 然后，在预定的气压下，在Fe靶和衬底之间施加预定的DC功率，以在Ti下层上形成FeTaN薄膜。 FeTaN薄膜后加热以在FeTaN薄膜内形成精细晶体。
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