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公开(公告)号：KR1020030020603A
公开(公告)日：2003-03-10
申请号：KR1020010053990
申请日：2001-09-04
Applicant: 한국전기연구원
IPC: H01F27/245
Abstract: PURPOSE: A method for manufacturing a low loss thin film inductor is provided to reduce coil loss of the inductor by increasing the thickness of the coil of the inductor, while allowing for an ease of manufacture. CONSTITUTION: A method comprises a first step of forming a soft magnetic layer(102) on a substrate(101); a second step of forming an insulating layer(103) on the soft magnetic layer; a third step of forming a seed layer(104) for an electro-plating on the insulating layer; a fourth step of forming a photoresist layer on the seed layer, and forming a pattern of a desired coil shape using the photoresist; and a fifth step of forming a coil portion(107) to the pattern of the coil shape through an electro-plating process; and a sixth step of removing the photoresist remaining around the coil portion formed in the fifth step, and attaching an upper magnetic film(109) on the resultant structure.
Abstract translation: 目的：提供一种制造低损耗薄膜电感器的方法，以通过增加电感器线圈的厚度来减少电感器的线圈损耗，同时允许制造的容易性。 构成：一种方法包括在衬底（101）上形成软磁层（102）的第一步骤; 在软磁性层上形成绝缘层（103）的第二步骤; 在绝缘层上形成用于电镀的种子层（104）的第三步骤; 在种子层上形成光致抗蚀剂层并使用光致抗蚀剂形成期望的线圈形状的图案的第四步骤; 以及通过电镀工艺形成线圈部分（107）到线圈形状图案的第五步骤; 以及第六步骤，除去残留在第五步骤中形成的线圈部分周围的光致抗蚀剂，并且在所得结构上附着上磁膜（109）。
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公开(公告)号：KR100473620B1
公开(公告)日：2005-03-07
申请号：KR1020000000548
申请日：2000-01-07
Applicant: 한국전기연구원
IPC: H01F1/12
CPC classification number: H01F1/15308 , H01F10/138
Abstract: 본 발명은 MHz대의 고주파수 영역에서 응용 가능한 자심 재료로서의 연자성 재료 및 연자성 박막의 제조 방법에 관한 것으로서, 기존의 일반적인 연자성 박막은 Fe계와 Co계 연자성 박막으로 크게 나눌 수 있는데, 일반적으로 Fe계 박막은 고포화 자화 특성이 우수하지만 자기변형이 크고, 고주파 특성이 나쁘며 열적 안정성이 나쁘며, Co계의 경우 고주파 특성은 우수하지만, 포화자화가 낮다는 단점이 있기 때문에, 본 발명에서는 고투자율, 저손실 및 고포화자화 특성을 동시에 만족하는 새로운 연자성 박막을 개발하기 위해 결정상을 형성하는 Fe-Zr-B계 조성에 Ag를 첨가시킨 Fe
86.7 Zr
3.3 B
4 Ag
6 비정질 박막을 DC 마그네트론 스퍼터링법으로 제조한 후, 일축 자장중에서 1시간 동안 진공 열처리를 한 후 팬(fan)을 이용하여 냉각하여 특성을 조사한 바, Fe
86.7 Zr
3
.3 B
4 Ag
6 박막을 400 ℃에서 열처리한 경우 1.7 T의 높은 포화자화와 0.825 Oe의 낮은 보자력으로 인해 50 MHz에서 투자율이 7800(0.2 mOe)으로 우수한 연자기 특성을 나타내었으며, 1 MHz에서 손실이 1.4 W/cc(0.1 T)로 매우 낮아, 고주파 영역에서 박막 자기소자의 자심재료로 매우 적합하다.-
公开(公告)号：KR1020010068574A
公开(公告)日：2001-07-23
申请号：KR1020000000548
申请日：2000-01-07
Applicant: 한국전기연구원
IPC: H01F1/12
CPC classification number: H01F1/15308 , H01F10/138
Abstract: PURPOSE: A preparation method of fe-zr-b-ag soft magnetic material and thin film are provided to achieve a magnetic core material having characteristic of a high magnetic permeability, low loss and a high saturation magnetization in MHz scale high frequency. CONSTITUTION: The material is prepared by the steps of vapor depositing Ag to the Fe-Zr-B alloy composition, treating resultant thin film with heat and cooling the FeZrBAg thin film to room temperature.
Abstract translation: 目的：提供一种Fe-zr-b-ag软磁材料和薄膜的制备方法，以实现在兆赫级高频下具有高磁导率，低损耗和高饱和磁化特性的磁芯材料。 构成：通过将Ag蒸镀到Fe-Zr-B合金组合物，通过加热处理得到的薄膜并将FeZrBAg薄膜冷却至室温的步骤来制备材料。
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公开(公告)号：KR100430671B1
公开(公告)日：2004-05-10
申请号：KR1020010055264
申请日：2001-09-08
Applicant: 한국전기연구원
IPC: H01F41/02
CPC classification number: H01F10/147
Abstract: PURPOSE: A method for manufacturing a FeTaN softmagnetism thin film for magnetic devices is provided to increase the magnetic anisotropy by adding a Ti lower layer on the FeTaN softmagnetism thin film. CONSTITUTION: A substrate is provided at a position apart from a Ti target in order to form a thin film. The Ti target and the substrate are used as a cathode and an anode, respectively. A predetermined DC(Direct Current) power is applied between the Ti target and the substrate, to thereby form a Ti lower layer on the substrate through sputtering. After changing the Ti target into a Fe target, a plurality of Ta leaflets are placed on a surface of the Fe target. Then, a predetermined DC power is applied between the Fe target and the substrate under a predetermined gas pressure to form a FeTaN thin film on the Ti lower layer. The FeTaN thin film is post-heated to form a fine crystal within the FeTaN thin film.
Abstract translation: 目的：提供一种用于制造用于磁性器件的FeTaN软磁薄膜的方法，以通过在FeTaN软磁薄膜上添加Ti下层来增加磁各向异性。 构成：为了形成薄膜，在离开Ti靶的位置提供衬底。 Ti靶和衬底分别用作阴极和阳极。 在Ti靶和衬底之间施加预定的DC（直流）功率，从而通过溅射在衬底上形成Ti下层。 在将Ti目标改变为Fe目标之后，将多个Ta小叶放置在Fe目标的表面上。 然后，在预定的气压下，在Fe靶和衬底之间施加预定的DC功率，以在Ti下层上形成FeTaN薄膜。 FeTaN薄膜后加热以在FeTaN薄膜内形成精细晶体。
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公开(公告)号：KR100297354B1
公开(公告)日：2001-09-22
申请号：KR1019990000413
申请日：1999-01-11
Applicant: 한국전기연구원
IPC: C23C14/00
Abstract: 본발명은스퍼터링법에의한다층구리막제조방법에관한것으로서, 접착력을우수하게하는증착조건인 200 W, 20 mtorr의조건하에서구리막을 1차증착한후, 전기비저항을가장낮게하는조건인 100 W, 10 mtorr의증착조건하에서다시 2차증착하여 2층구리막(2-layered Cu film)을제조하되, 2층구리막의전체두께에대한상기 1차로증착한하부구리막의두께비율()을약 25로함으로써, Cr, TiN, AlN과같은물질로이루어진중간층박막이나, 열처리와같은복잡한추가공정없이도, 낮은비저항특성과높은접착력특성을동시에만족하는구리막을제조할수 있어서, 제조공정이단순하여경제성이향상되는효과가있는매우유용한발명이다.
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Patent Agency Ranking
公开(公告)号：KR1020000032999A
公开(公告)日：2000-06-15
申请号：KR1019980049645
申请日：1998-11-16
Applicant: 한국전기연구원
IPC: C23F1/16
CPC classification number: C23F1/44
Abstract: PURPOSE: A cobalt- and copper-series multilayer metal film etching solution, a preparation method thereof and an etching method using them are provided, for etching cobalt- and copper-series multilayer simultaneously and for providing an anisotropic section in etching to allow the fine pattern to be easily formed. CONSTITUTION: The etching solution comprises 1-20 mol% of FeCl3.6H2O, 1-40 mol% of HF, water, and optionally 0.5 or less mol% of nitric acid or hydrochloric acid. The etching solution is prepared by mixing FeCl3.6H2O and water during maintaining the temperature to be 30-50°C; and adding HF into the FeCl3 solution. A cobalt- and copper-series metal multilayer is etched by adding the multilayer into the etching solution during the temperature to be 25-30°C.
Abstract translation: 目的：提供钴和铜系多层金属膜蚀刻溶液，其制备方法和使用它们的蚀刻方法，用于同时蚀刻钴和铜系多层膜，并在蚀刻中提供各向异性部分以允许精细 图案容易形成。 构成：蚀刻溶液包含1-20摩尔％的FeCl 3·6H 2 O，1-40摩尔％的HF，水和任选的0.5或更少的摩尔％的硝酸或盐酸。 蚀刻溶液通过在保持温度为30-50℃的条件下混合FeCl3·6H2O和水来制备; 并向FeCl3溶液中加入HF。 通过在25-30℃的温度下将多层加入到蚀刻溶液中来蚀刻钴和铜系金属多层。
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公开(公告)号：KR100440810B1
公开(公告)日：2004-07-21
申请号：KR1020010053990
申请日：2001-09-04
Applicant: 한국전기연구원
IPC: H01F27/245
Abstract: PURPOSE: A method for manufacturing a low loss thin film inductor is provided to reduce coil loss of the inductor by increasing the thickness of the coil of the inductor, while allowing for an ease of manufacture. CONSTITUTION: A method comprises a first step of forming a soft magnetic layer(102) on a substrate(101); a second step of forming an insulating layer(103) on the soft magnetic layer; a third step of forming a seed layer(104) for an electro-plating on the insulating layer; a fourth step of forming a photoresist layer on the seed layer, and forming a pattern of a desired coil shape using the photoresist; and a fifth step of forming a coil portion(107) to the pattern of the coil shape through an electro-plating process; and a sixth step of removing the photoresist remaining around the coil portion formed in the fifth step, and attaching an upper magnetic film(109) on the resultant structure.
Abstract translation: 目的：提供一种用于制造低损耗薄膜电感器的方法，以通过增加电感器的线圈厚度来减小电感器的线圈损耗，同时允许制造容易。 构成：一种方法包括：在衬底（101）上形成软磁层（102）的第一步骤; 在软磁层上形成绝缘层（103）的第二步骤; 在绝缘层上形成用于电镀的籽晶层（104）的第三步骤; 第四步骤，在种子层上形成光致抗蚀剂层，并使用光致抗蚀剂形成所需线圈形状的图案; 以及第五步骤，通过电镀工艺将线圈部分（107）形成为线圈形状的图案; 以及第六步骤，去除残留在第五步骤中形成的线圈部分周围的光致抗蚀剂，并将上磁膜（109）附着在所得到的结构上。
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公开(公告)号：KR1020030021825A
公开(公告)日：2003-03-15
申请号：KR1020010055264
申请日：2001-09-08
Applicant: 한국전기연구원
IPC: H01F41/02
CPC classification number: H01F10/147
Abstract: PURPOSE: A method for manufacturing a FeTaN softmagnetism thin film for magnetic devices is provided to increase the magnetic anisotropy by adding a Ti lower layer on the FeTaN softmagnetism thin film. CONSTITUTION: A substrate is provided at a position apart from a Ti target in order to form a thin film. The Ti target and the substrate are used as a cathode and an anode, respectively. A predetermined DC(Direct Current) power is applied between the Ti target and the substrate, to thereby form a Ti lower layer on the substrate through sputtering. After changing the Ti target into a Fe target, a plurality of Ta leaflets are placed on a surface of the Fe target. Then, a predetermined DC power is applied between the Fe target and the substrate under a predetermined gas pressure to form a FeTaN thin film on the Ti lower layer. The FeTaN thin film is post-heated to form a fine crystal within the FeTaN thin film.
Abstract translation: 目的：提供一种制造用于磁性器件的FeTaN软磁薄膜的方法，通过在FeTaN软磁薄膜上添加Ti下层来提高磁各向异性。 构成：为了形成薄膜，在与Ti靶分离的位置处设置基板。 Ti靶和基板分别用作阴极和阳极。 在Ti靶和衬底之间施加预定的DC（直流）功率，从而通过溅射在衬底上形成Ti下层。 将Ti靶变为Fe靶后，将多个Ta叶放置在Fe靶的表面上。 然后，在规定的气体压力下，在Fe靶和基板之间施加规定的直流电力，在Ti下层上形成FeTaN薄膜。 FeTaN薄膜被后加热以在FeTaN薄膜内形成细晶体。
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公开(公告)号：KR100295805B1
公开(公告)日：2001-10-26
申请号：KR1019980049645
申请日：1998-11-16
Applicant: 한국전기연구원
IPC: C23F1/16
Abstract: 본 발명은 Co계 및 Cu계 다층 금속막 동시 식각(蝕刻)(etching) 용액과 그 제조방법 및 이를 이용한 식각방법에 관한 것으로서, 요구된 조성비로 칭량하여 제조한 염화철(Ⅲ) 육수화물 40g을 약 30 ∼50 ℃순수한 물 40cc에 혼합한 후, 교반기를 이용하여 균일하게 용해하여 염화철(Ⅲ) 육수화물 수용액을 제조하고, 제조된 염화철(Ⅲ) 육수화물 수용액과 불산 2cc를 역시 교반기를 이용하여 균일하게 혼합하여 최종 식각 용액을 제조하되, 상기 염화철(Ⅲ) 육수화물 수용액의 농도는 1∼20 mol%, 상기 불산의 농도는 1∼40 mol%이 되도록 하는 한편, 이를 이용한 습식 식각시의 온도는 약 30 ∼50 ℃로 유지함으로써, 보다 경제적인 습식 식각법을 사용하면서도 Co계 및 Cu계 다층 금속막을 동시에 식각할 수 있고, 식각시 단면이 이방성이어서 미세 패턴을 형성하는데 용이한 매우 유용한 발명인 것이다.
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公开(公告)号：KR1020000050489A
公开(公告)日：2000-08-05
申请号：KR1019990000413
申请日：1999-01-11
Applicant: 한국전기연구원
IPC: C23C14/00
CPC classification number: C23C14/3492 , C23C14/165
Abstract: PURPOSE: A process for preparing a multilayer copper film by controlling only a vapor deposition condition during sputtering is provided which satisfies both low electric resistivity characteristics and high adhesive characteristics. CONSTITUTION: A process comprises the steps of (1) forming a copper layer by the first deposition of a copper film under the deposition condition of 200W and 20 mTorr for providing excellent adhesion and (2) preparing a two-layered copper film by the second deposition of a copper film under the deposition condition of 100W and 10 mTorr for providing low electric resistivity, wherein the thickness ratio of the lower copper film to the total thickness of the two-layered copper film is about 25%. The process produces a film having excellent physical properties without additional complex processes such as an intermediate layer thin film comprising Cr, TiN and AlN and a heat treatment in a simple manner and economically.
Abstract translation: 目的：提供一种通过仅控制溅射时的气相沉积条件来制备多层铜膜的方法，其既满足低电阻率特性又具有高粘合特性。 构成：一种方法包括以下步骤：（1）通过在200W和20mTorr的沉积条件下首次沉积铜膜形成铜层，以提供优异的粘附性，和（2）通过第二层制备双层铜膜 在100W和10mTorr的沉积条件下沉积铜膜以提供低电阻率，其中下层铜膜与双层铜膜的总厚度的厚度比为约25％。 该方法产生具有优异物理性质的膜，而不需要额外的复杂工艺，例如包含Cr，TiN和AlN的中间层薄膜，并且以简单的方式和经济地进行热处理。
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