公开(公告)号：KR100430671B1

公开(公告)日：2004-05-10

申请号：KR1020010055264

申请日：2001-09-08

Applicant: 한국전기연구원

Inventor： 송재성 ,  민복기 ,  김인성 ,  김현식 ,  김형준 ,  신동훈

IPC: H01F41/02

CPC classification number: H01F10/147

Abstract: PURPOSE: A method for manufacturing a FeTaN softmagnetism thin film for magnetic devices is provided to increase the magnetic anisotropy by adding a Ti lower layer on the FeTaN softmagnetism thin film. CONSTITUTION: A substrate is provided at a position apart from a Ti target in order to form a thin film. The Ti target and the substrate are used as a cathode and an anode, respectively. A predetermined DC(Direct Current) power is applied between the Ti target and the substrate, to thereby form a Ti lower layer on the substrate through sputtering. After changing the Ti target into a Fe target, a plurality of Ta leaflets are placed on a surface of the Fe target. Then, a predetermined DC power is applied between the Fe target and the substrate under a predetermined gas pressure to form a FeTaN thin film on the Ti lower layer. The FeTaN thin film is post-heated to form a fine crystal within the FeTaN thin film.

Abstract translation: 目的：提供一种用于制造用于磁性器件的FeTaN软磁薄膜的方法，以通过在FeTaN软磁薄膜上添加Ti下层来增加磁各向异性。 构成：为了形成薄膜，在离开Ti靶的位置提供衬底。 Ti靶和衬底分别用作阴极和阳极。 在Ti靶和衬底之间施加预定的DC（直流）功率，从而通过溅射在衬底上形成Ti下层。 在将Ti目标改变为Fe目标之后，将多个Ta小叶放置在Fe目标的表面上。 然后，在预定的气压下，在Fe靶和衬底之间施加预定的DC功率，以在Ti下层上形成FeTaN薄膜。 FeTaN薄膜后加热以在FeTaN薄膜内形成精细晶体。

公开(公告)号：KR1020030021825A

公开(公告)日：2003-03-15

申请号：KR1020010055264

申请日：2001-09-08

Applicant: 한국전기연구원

Inventor： 송재성 ,  민복기 ,  김인성 ,  김현식 ,  김형준 ,  신동훈

IPC: H01F41/02

CPC classification number: H01F10/147

Abstract: PURPOSE: A method for manufacturing a FeTaN softmagnetism thin film for magnetic devices is provided to increase the magnetic anisotropy by adding a Ti lower layer on the FeTaN softmagnetism thin film. CONSTITUTION: A substrate is provided at a position apart from a Ti target in order to form a thin film. The Ti target and the substrate are used as a cathode and an anode, respectively. A predetermined DC(Direct Current) power is applied between the Ti target and the substrate, to thereby form a Ti lower layer on the substrate through sputtering. After changing the Ti target into a Fe target, a plurality of Ta leaflets are placed on a surface of the Fe target. Then, a predetermined DC power is applied between the Fe target and the substrate under a predetermined gas pressure to form a FeTaN thin film on the Ti lower layer. The FeTaN thin film is post-heated to form a fine crystal within the FeTaN thin film.

Abstract translation: 目的：提供一种制造用于磁性器件的FeTaN软磁薄膜的方法，通过在FeTaN软磁薄膜上添加Ti下层来提高磁各向异性。 构成：为了形成薄膜，在与Ti靶分离的位置处设置基板。 Ti靶和基板分别用作阴极和阳极。 在Ti靶和衬底之间施加预定的DC（直流）功率，从而通过溅射在衬底上形成Ti下层。 将Ti靶变为Fe靶后，将多个Ta叶放置在Fe靶的表面上。 然后，在规定的气体压力下，在Fe靶和基板之间施加规定的直流电力，在Ti下层上形成FeTaN薄膜。 FeTaN薄膜被后加热以在FeTaN薄膜内形成细晶体。