公开(公告)号：KR1020070119358A

公开(公告)日：2007-12-20

申请号：KR1020060053897

申请日：2006-06-15

Applicant: 한국전자통신연구원

Inventor： 박래만 ,  김상협 ,  맹성렬 ,  박종혁

IPC: B82B3/00 ,  B82Y40/00

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  C01B33/02 ,  C01B33/027 ,  C30B25/00 ,  C30B29/06 ,  C30B29/602 ,  H01L21/02532 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/16

Abstract: A method for manufacturing silicon nanotubes is provided to produce silicon nanotubes more effectively by growing silicon nanotubes using doughnut-shape catalytic metal. A method for manufacturing silicon nanotubes includes the steps of: forming non-catalytic metal islands(104) on a substrate(100); forming catalytic metal doughnuts(106) to surround the non-catalytic metal islands; and growing silicon nanotubes(108) on the catalytic metal doughnuts. The non-catalytic metal island is formed by forming a non-catalytic metal layer on the substrate, followed by heat-treating the non-catalytic metal layer. Further, the non-catalytic metal layer is chrome, platinum or vanadium.

Abstract translation: 提供一种制造硅纳米管的方法，通过使用环形催化金属生长硅纳米管，更有效地制造硅纳米管。 制造硅纳米管的方法包括以下步骤：在衬底（100）上形成非催化金属岛（104）; 形成催化金属甜甜圈（106）以包围所述非催化金属岛; 以及在催化金属甜甜圈上生长硅纳米管（108）。 通过在基板上形成非催化金属层，然后对非催化金属层进行热处理，形成非催化金属岛。 此外，非催化金属层是铬，铂或钒。

公开(公告)号：KR100723882B1

公开(公告)日：2007-05-31

申请号：KR1020060053896

申请日：2006-06-15

Applicant: 한국전자통신연구원

Inventor： 박래만 ,  김상협 ,  박종혁 ,  맹성렬

IPC: H01L21/20 ,  B82Y40/00

Abstract: 본 발명은 기판 상에 실리콘 나노점을 갖는 실리콘 나노점 박막을 형성하고, 상기 실리콘 나노점을 핵생성층으로 하여 상기 실리콘 나노점 박막 상에서 실리콘 나노 와이어를 성장시킨다. 본 발명은 금속 촉매 아일랜드를 사용하지 않고 실리콘 질화물 기저체 내에 실리콘 나노점이 형성된 실리콘 나노점 박막을 핵생성층으로 하여 실리콘 나노와이어를 제조할 수 있다.

Abstract translation: 本发明是生长在硅纳米点的硅纳米线和所述硅纳米点的薄膜，并且形成具有在衬底上的成核层的纳米硅纳米点的硅薄膜。 本发明能够制造使用硅纳米薄膜硅形成于硅氮化物的基体，而不使用在爱尔兰成核层的金属催化剂纳米点的硅纳米线。

公开(公告)号：KR1020030056328A

公开(公告)日：2003-07-04

申请号：KR1020010086529

申请日：2001-12-28

Applicant: 한국전자통신연구원

Inventor： 하정숙 ,  박경완 ,  박승민 ,  박종혁

IPC: H01L21/203 ,  B82Y40/00

CPC classification number: C23C14/28 ,  B82Y20/00 ,  C23C14/16 ,  Y10T117/10

Abstract: PURPOSE: A method for manufacturing an Er-doped silicon nano dot array and a laser ablation equipment used for the same are provided to be capable of preventing the contamination due to impurities, and forming an Er-doped silicon layer having a high purity. CONSTITUTION: A target(1300) including a silicon region(1350) and an erbium region(1310), is prepared. A silicon substrate is loaded opposite to the surface of the target. An erbium doped silicon layer is formed on the silicon substrate by using a plum(1700) containing silicon vaporized from the silicon region and erbium vaporized from the erbium region. At this time, the plum is generated by irradiating laser beam onto the target. Then, the erbium doped silicon layer is patterned.

Abstract translation: 目的：提供一种用于制造掺铒硅纳米点阵列的方法和用于其的激光烧蚀设备，以能够防止由杂质引起的污染，并形成具有高纯度的Er掺杂硅层。 构成：制备包括硅区（1350）和铒区（1310）的靶（1300）。 硅衬底与靶的表面相对地加载。 通过使用含有从硅区蒸发的硅和从铒区蒸发的铒的含有李子（1700），在硅衬底上形成掺铒硅层。 此时，通过将激光束照射到靶上而产生李子。 然后，对掺铒硅层进行图案化。