Abstract:
PURPOSE: A multiple analyzer and a method for analyzing cancer cells in blood are provided to analyze cancer cells in each cancer. CONSTITUTION: A multiple analyzer comprises a magnetophoresis sorting part, a magnetic field measuring unit, and an analyzing and determining unit. The magnetophoresis sorting part comprises: a solution inlet; a saline solution inlet; a channel which is connected to the solution inlet and the saline solution inlet; one or more ferromagnetism patterns which are placed under the bottom of the channel; a first discharging path which is connected to the channel and discharges a first kind of material contained in the solution; and a second discharge path which is connected to the channel and discharges a second kind of material contained in the solution. A method for analyzing cancer cells in blood comprises the following steps: a step of mixing blood to be tested with a magnetic nanoparticle which is conjugated with a cancer cell-specific antibody, and preparing a mixture solution(S10); a step of dividing the mixture solution into normal cells and cancer cells by magnetophoresis(S20); a step of continuously measuring a magnetic field of the cancer cells(S30); and a step of analyzing and determining cancer cells in each cancer using the magnetic field of the cancer cell(S40). [Reference numerals] (AA) Blood; (BB) Magnetic nanoparticles; (CC) Mixture solution; (S20) Magnetophoresis division: dividing cancer cells and normal cells; (S30) Continuously measuring the magnetic field of the cancer cells; (S40) Analyzing/determining the cancer kinds of cancer cells
Abstract:
PURPOSE: A multiple sorting apparatus and a method for sorting cancer cells in blood using the same are provided to sort the cancer cells by each kind of cancer and to simply diagnose cancer development. CONSTITUTION: A multiple sorting apparatus(100) comprises a first magnetophoresis sorting part(MP1) and a second magnetophoresis sorting part(MP2). The first magnetophoresis sorting part has a first channel(CH1). One side of the first channel is connected with a mixture solution inlet port(IP1) and a first saline solution inlet port(IP2). The other side of the first channel is connected with a first outlet port(OP1) and a preliminary separation path(PSP). The second magnetophoresis sorting part has a second channel. One side of the first channel is connected with a second saline solution inlet port(IP3) and a preliminary separation path. The other side of the second channel is connected with the second outlet port(OP2).
Abstract:
본 발명에 따른 적외선 센서의 제조 방법은 기판 상에 질화 금속 박막을 증착하는 단계, 상기 질화 금속 박막을 포토리소그래피 공정을 통하여 패터닝하는 단계, 그리고 패터닝된 상기 질화 금속 박막을 환원 분위기에서 플라즈마 처리하는 단계를 포함한다. 따라서, 본 발명에 따른 적외선 센서 제조 방법은 흡수층 또는 전극 패터닝 후의 플라즈마 처리 공정에서 산소 플라즈마에 의해 부분적으로 산화된 전극 또는 흡수층을 다시 환원시켜 본래의 저항값에 근접하게 회복시켜 주며 저항값의 균일도를 크게 개선시켜주는 효과를 가진다. 멤스, 적외선 센서, 볼로미터, 전극, 흡수층
Abstract:
PURPOSE: A non-cooling type infrared ray sensor and a manufacturing method thereof are provided to increase the infrared absorptivity of a microbolometer by forming a dual absorption layer above/under a structure film for a microbolometer. CONSTITUTION: A reflecting layer(30) is formed on a substrate(10). A first absorption layer(60) is formed by being separated from the reflecting layer. A resistant layer(80) is formed on the first absorption layer. A second absorption layer(100) is formed on the resistant layer. An insulating layer which electrically insulates each layer is formed between the reflecting layer, the first absorption layer, the resistant layer, and the second absorption layer.
Abstract:
PURPOSE: A bolometer structure including a supplementation absorbing layer, a pixel for sensing infrared rays using the same, and a manufacturing method thereof are provided to improve a processing yield by thinly forming the depth of a bolometer structure. CONSTITUTION: A first metal layer(410) is formed on the single-side of a temperature sensitivity type register(414). The first metal layer absorbs infrared rays. A second metal layer(416) is formed on the other side of the temperature sensitivity type register. The second metal layer outputs a resistance change of the temperature sensitivity type register to the outside. An insulating layer(412) is formed between the temperature sensitivity type register and the first metal layer.
Abstract:
본 발명은 폴리이미드 박막을 희생층으로 사용하는 멤스 구조체의 제작과정에 있어 엥커 공정시에 격자형태의 더미 패턴을 형성하여 균열을 방지하는 방법에 관한 것이다. 본 발명의 멤스 구조체 제조 방법은, (a) 기판을 형성하는 단계; 및 (b) 다수개의 비워진 영역이 구비된 형태의 희생층을 상기 기판 상에 형성하고, 상기 비워진 영역에 소자를 형성하는 단계를 포함하되, 상기 희생층의 상기 각 비워진 영역들 사이에 적어도 일방향의 격자 홈들이 위치하는 것을 특징으로 한다. 본 발명에 의해 제안된 방법을 이용함으로써 멤스 구조체의 균열 현상을 줄일 수 있으며 이를 이용하여 더욱 얇은 두께를 가지는 멤스 구조체를 제조하는 것이 현저히 용이해진다. 멤스, 폴리이미드, 희생층, 균열
Abstract:
본 발명은 잡음 감소 및 온도 감지에 대한 정밀도가 향상된 볼로미터 및 그 제조 방법에 관한 것으로, 결정화도가 높은 단결정 실리콘(Si) 또는 실리콘 게르마늄(Si 1-x Ge x , x=0.2~0.5)으로 저항층을 형성함으로써, 종래의 비정질 실리콘 볼로미터에 비하여 1/f 잡음을 감소시킬 수 있으며, 이에 따라 적외선 센서의 온도 감지에 대한 정밀도를 획기적으로 향상시킬 수 있는 것을 특징으로 한다. 볼로미터, 저항체, 단결정, 실리콘, 실리콘 게르마늄
Abstract:
A MEMS infrared sensor and a manufacturing method thereof are provided to improve a characteristic of the sensor by increasing an area of a senor unit by reducing the area occupied by a support arm. A sacrificial layer is formed on a substrate(10) including a reflective film. A step(12) for a support arm structure of the three-dimensional structure is formed. An anchor(13) is patterned in a lower part of the step. A lower protective film(14) is deposited in the front side of the sacrificial layer. A contact hole(15) is formed in the lower protective film. An electrode(16) is formed on the lower protective film of the support arm structure. A sensor material(17) is deposited in the front side of the sacrificial layer. An upper protective film(18) is deposited in the front side of the sacrificial layer. A path(19) of the etchant material is formed by patterning the upper protective film.
Abstract:
A bolometer and a manufacturing method thereof are provided to reduce 1/f noise and improve the sense accuracy of an infrared sensor by forming a resistance layer with a single-crystal silicon and silicon-germanium. A semiconductor substrate(210) comprises a detection circuit inside it, and a reflective film(214) is built up in a partial region on the surface of the semiconductor substrate. A metal pad(212) is formed at both sides of a reflective film by a certain space, and a sensor structure(230) is formed on the substrate while being separated from the surface of the reflective film by lambda/4 of an infrared. A sensor structure comprises a body part including a resistance layer(234) composed of the single-crystal silicon having a doped impurity or a silicon-germanium.
Abstract:
본 발명은 어스펙트비가 큰 전도성 물질과 절연성 고분자 물질로 된 가스 센서용 복합재료 및 이를 제조하는 방법에 관한 것이다. 이와 같이 어스펙트비가 큰 전도성 물질을 사용함에 따라 복합재료에 첨가되는 전도성 물질의 함량을 감소시킬 수 있으면서 동시에 높은 감지 감도를 얻을 수 있다. 가스 센서, 카본 나노튜브, 감도, 분산