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公开(公告)号：JPS63274047A
公开(公告)日：1988-11-11
申请号：JP10884687
申请日：1987-05-06
Applicant: CANON KK
Inventor： TSUKAMOTO TAKEO , MIYAWAKI MAMORU , KANEKO TETSUYA , SUZUKI AKIRA , SHIMODA ISAMU , TAKEDA TOSHIHIKO , OKUNUKI MASAHIKO
IPC: H01J37/073 , H01J1/30 , H01J1/304 , H01J9/02
Abstract: PURPOSE:To simplify the manufacture process of the tip of a cathode and to realize a thin type by processing a conductive layer laminated on an insulating base body minutely, and forming an electron emitting electrode with a sharp tip and an opposite electrode opposing to the tip. CONSTITUTION:On an insulating base body 1 of a glass or the like, a conductive layer is laminated, and an electron emitting electrode 2 and an opposite electrode 3 are formed by applying a maskless etching technology such as FIB, for example. The form of the tip of the electron emitting electrode 2 is made with the radius of curvature as small as possible. The radius of curvature of the cathode 2 can be formed as small as possible and the distance between the electron emitting electrode 2 and the opposite electrode 3 can be made at a high accuracy by using a minute process technology in such a way. In such a composition, the manufacture process can be simplified, and moreover, since the electron emitting electrode 2 and the opposite electrode 3 are processed minutely on the same level, a thin type unit can be made easily.
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公开(公告)号：JPS63269531A
公开(公告)日：1988-11-07
申请号：JP10303887
申请日：1987-04-28
Applicant: CANON KK
Inventor： OKUNUKI MASAHIKO , SHIMODA ISAMU , MIYAWAKI MAMORU , TSUKAMOTO TAKEO , SUZUKI AKIRA , KANEKO TETSUYA , TAKEDA TOSHIHIKO , SEKI MITSUAKI
IPC: G11B9/10 , H01J37/305 , H01L21/027 , H01L21/30 , H01L21/66
Abstract: PURPOSE:To enhance a processing speed by a method wherein, when a pattern data is supplied to a charged particle beam generation source, it is transferred via more than two data storage means so that the waiting time of the data at the charged beam generation source is eliminated. CONSTITUTION:If the information designed by a controller CAD is sent out to a one- chip pattern generator PG, the generator PG divides the drawing information on one chip into the drawing information for an upper half and that for a lower half and sends these two pieces of information to individual 1/2 chip memories MU, ML alternately. Because the memories MU, ML are used alternately in this manner, it is possible to substantially eliminate a loss of the time during a data transfer from the generator PG. While each EB source is defelected by its X-direction deflecting electrodes X1, X2 in an X-direction and executes a drawing operation in the X-direction within a range to be covered by a deflection on the basis of the drawing information for the upper half from the memories MU, ML, a wafer WF and a head MB are continuously shifted relatively in a Y-direction. By this setup, all picture elements in the Y-direction in a 1/2 region are drawn. If the drawing operation is repeated while the wafer WF and the head MB are intermittently shifted relatively in the X-direction in the same manner, one chip row in the Y-direction can be drawn.
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公开(公告)号：JPS63269527A
公开(公告)日：1988-11-07
申请号：JP10303187
申请日：1987-04-28
Applicant: CANON KK
Inventor： OKUNUKI MASAHIKO , SHIMODA ISAMU , MIYAWAKI MAMORU , TSUKAMOTO TAKEO , SUZUKI AKIRA , KANEKO TETSUYA , TAKEDA TOSHIHIKO , SEKI MITSUAKI
IPC: H01J37/06 , G11B9/10 , H01J37/305 , H01L21/027 , H01L21/30 , H01L21/66
Abstract: PURPOSE:To realize a high processing speed even for a big medium by a method wherein a plurality of multiple charged particle beam elements where plural charged particle beam generation sources are installed unidimensionally are arranged in rows and these charged particle beam generation sources are actuated on the basis of data of a pattern. CONSTITUTION:Short heads MB1-MB3 are arranged in a Y-direction when it is difficult to manufacture a huge head or in order to cope with a large- diameter wafer WF appropriately. An alignment mark detection part or a part whose strength is to be reinforced is usually required at each end part, it is desirable to arrange the heads in zigzag. While each EB source executes a drawing operation in an X-direction within a range which can be deflected by using an X-direction deflecting electrode, the wafer WF and a head MB are continuously shifted relatively in a Y-direction. By this setup, all pixels in the Y-direction in a 1/2 region are drawn. Each pixel in the Y-direction is corrected by using Y-direction deflecting electrodes Y1, Y2. Furthermore, if this drawing operation is repeated while the wafer WF and the head MB are intermittently shifted relatively in the X-direction, the drawing operation of one chip row on the Y-direction is executed.
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公开(公告)号：JPS63239750A
公开(公告)日：1988-10-05
申请号：JP7360187
申请日：1987-03-27
Applicant: CANON KK
Inventor： TSUKAMOTO TAKEO , SUZUKI AKIRA , SHIMODA ISAMU , KANEKO TETSUYA , TAKEDA TOSHIHIKO , YONEHARA TAKAO , ICHIKAWA TAKESHI , OKUNUKI MASAHIKO
Abstract: PURPOSE:To aim at promotion for low voltage and improvement in electron emission efficiency, by constituting a peak part an electrode from at least the semiconductorcrystal made by unclear growth and a low work function material. CONSTITUTION:With the single nucleus formed in a nucleation base 2 as the center, a monocrystal of Si or the like is grown up while adding n-type impurities to it, and an n-type semiconductor area 9 is formed up, and furthermore a p-type semiconductor area 10 is formed while adding p-type impurities onto this n-type semiconductor area 9. The p-type semiconductor area 10 has a facet peculier to the monocrystal, on which a low work function material area 11 of CsSi or the like is formed, whereby such an electrode as having a peak part serving as an electron emission part is formed. With this constitution, promotion for low voltage is contrivable as well as improvement in electron emission efficiency is promotable.
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公开(公告)号：JPS63218118A
公开(公告)日：1988-09-12
申请号：JP5034487
申请日：1987-03-06
Applicant: CANON KK
Inventor： KANEKO TETSUYA , SUZUKI AKIRA , SHIMODA ISAMU , TSUKAMOTO TAKEO , TAKEDA TOSHIHIKO , YONEHARA TAKAO , ICHIKAWA TAKESHI , OKUNUKI MASAHIKO
IPC: H01J9/02
Abstract: PURPOSE:To make the intensity of electric field even and strong and to suppress the unevenness of the range of voltage at the starting of operation by forming an electrode which has a spire to be an electron emitter in a clean surface at first, and then forming an insulating layer and another electrode, around a single core formed of a minute different sort of material as the center. CONSTITUTION:At the accumulation surface of a base body 1 which consists of an amorphous material such as SiO2, a core forming base 2 of a different sort of material such as Si or Si3N4 is formed, and around a single core as the center, a single crystal of an element such as Mo, W, or Si is grown up, and then an insulating layer 4 is formed on the surface of an electrode 3 with a spire and on the accumulation surface of the base body 1. Then, on the insulating layer 4, an electrode layer 5 of Mo, for example, is formed, and moreover, a photo-resist 6 is spread on the electrode layer 5 and exposed to open the upper part of the spire of the electrode 3. After that, an aperture 7 is made, the insulating layer 4 is etched selectively to arrange an aperture 8, and the spire of the electrode 3 is exposed. In such a way, the electrode 3 with the spire is composed with a single crystal which has little deformation, and the form of the electron emitter of the spire is made even. As a result, the intensity of the electric field is made even and strong, and the unevenness of the range of voltage at the starting of operation can be suppressed.
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Patent Agency Ranking
公开(公告)号：JPS63207028A
公开(公告)日：1988-08-26
申请号：JP3807687
申请日：1987-02-23
Applicant: CANON KK
Inventor： SUZUKI AKIRA , SHIMODA ISAMU , KANEKO TETSUYA , TSUKAMOTO TAKEO , TAKEDA TOSHIHIKO , YONEHARA TAKAO , ICHIKAWA TAKESHI , OKUNUKI MASAHIKO
Abstract: PURPOSE:To make it possible to form the surface of a high resistance membrane to be the electron emitting part stably, and to improve the electron emitting efficiency, by forming it with crystals having plural spires which are grown up from single cores to be different materials. CONSTITUTION:At an oxide base body 1 of an insulating material such as SiO2, core forming bases 6 of different material such as Si, or Si3O4 are formed plurally. By growing up a single crystal such as Mo, W, or Si, around the single core formed on the core forming base 6, a desired size of high resistance membrane 3 having plural approximately conical spires 7 of a single cylistal is formed. Each spire 7 of the high resistance membrane 3 is to be an electron emitting part. By forming the core forming bases 6 at equal intervals, the projections and the recessions of the high resistance membrane 3 can be made almost even. Moreover, the electron emitting efficiency can be improved.
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公开(公告)号：JPS6391926A
公开(公告)日：1988-04-22
申请号：JP23450186
申请日：1986-10-03
Applicant: CANON KK
Inventor： SUGATA MASAO , TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: PURPOSE:To simplify composition of electron emitting elements and to increase disposal density by disposing plural combinations of electron emitting elements and shutter elements and disposing a light source on the side of the shutter elements. CONSTITUTION:The first metal 8, an insulating material 10, and the second metal 12, which are respectively made of prescribed materials, are laminated on a transparent substrate 1, and an power source 14 is connected between the first metal and the second metal which is set on the positive side. A liquid crystal layer 22 is interposed between a transparent electrode 16 on the rear of the substrate and a transparent plate 18 having a transparent electrode 20 facing the electrode 16, so that shutters 6 are composed. Unity regions 26 capable of matrix driving are formed on the superposed part of the electrodes 16 and 20 in the shutters 6. Voltage setting is performed so that electrons are not emitted from the metallic layer 12 when only voltage of the power source 14 is applied. On the unity region 26 without voltage between the electrodes 16 and 20, light is transmitted and so the electrons inside the metal 8 are emitted outside. On the region where the voltage is applied, the light is scattered and not transmitted and so the electrons are not emitted from the metal 8. Hence, composition of an electron emitting element can be simplified and a high density picture element pattern can be formed.
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公开(公告)号：JPS6347968A
公开(公告)日：1988-02-29
申请号：JP19186486
申请日：1986-08-15
Applicant: CANON KK
Inventor： NAKAMURA KENJI , KAN FUMITAKA , TAKENOUCHI MASANORI , HAYAKAWA NAOJI , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: PURPOSE:To obtain a memory which does not erase information even after a long time keeping and can simultaneously invert parallel pieces of information simply by an external control by providing specific control means in the memory having an electron beam source, electron beam detecting means and driving means for driving the source for transmitting and receiving an electron beam in a unit time. CONSTITUTION:An electron beam source E, electron beam detecting means D, and driving means T for driving the source E by a signal of the means D are made one unit, and an electron beam is transmitted and received between two or more units U. Control means is provided between the means D and the source E contained in one unit U so that, when the beam is incident to the means D at the time of logical calculation, the beam is not emitted from the source E, and when the beam is not incident to the means D, the beam is not emitted from the source E. For example, two or more memory units MU having a plurality of the units U are oppositely disposed, and means SE for deflecting the beam emitted from the source E to be incident to the means D contained in the same unit U is provided.
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公开(公告)号：JPS62272169A
公开(公告)日：1987-11-26
申请号：JP11351986
申请日：1986-05-20
Applicant: CANON KK
Inventor： SHIMODA ISAMU , TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SUGATA MASAO , OKUNUKI MASAHIKO
IPC: G01R33/02 , G01R33/028
Abstract: PURPOSE:To measure a magnetic field with high sensitivity by deflecting a linear electron flow electromagnetically by a magnetic field to be measured and measuring the intensity of the magnetic field based on the difference between currents which flow to anode electrodes divided in the deflection direction. CONSTITUTION:The divided anode electrodes for sucking electron currents are provided at specific distance from the electron emission surface of an electron emitting element 1 and division electrodes 2 and 3 are constituted on the anode electrodes. If a magnetic field 8 with magnetic flux density B is present between the element 1 and electrodes 2 and 3, an electron flow 9 is deflected electromagnetically to cause a shift in the arrival position of the electron flow 9 toward the electrode 2 by deflection distance (h), and consequently a current I1 increases and a current I2 decreases. If the values of the currents I1 and I2 are proportional to the lengths of the electron flow 9 on the electrodes 2 and 3, the distance (h) is found from the difference between the currents I1 and I2 and an angle theta. Therefore, the magnetic flux density B is calculated from a prescribed expression. Thus, the magnetic field with high sensitivity is measured.
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公开(公告)号：JPS60235160A
公开(公告)日：1985-11-21
申请号：JP9021484
申请日：1984-05-08
Applicant: CANON KK
Inventor： SHIMODA ISAMU
IPC: H01L21/30 , G03F9/00 , G03G9/00 , H01L21/027
Abstract: PURPOSE:To control the positioning of an illumination light source to a minimum necessary extend and evade unnecessary exposure of the photosensitive material, etc., of a wafer by turning on the light source only for detecting a positioning signal when plural bodies with a positioning mark are illuminated to detect reflected light and then positioned. CONSTITUTION:A controller 9 turns on a thyratron 10 after a wafer 7 is moved to a specific position to turn on a laser 1 and also turns on a positioning signal detector 8. A laser beam 2 from the laser 1 illuminates the wafer 7 through a reflecting mirror 3, beam splitter (BS)4, master 5, and projection lens 6. Reflected light from the positioning mark of the wafer 7 travels backward and is reflected by the BS4 to be made incident on the positioning signal detector 8, which calculates the positions shift of the wafer 7 to position the wafer 7 on the basis of the detection output. When the detector 8 detects a positioning signal, on the other hand, the controller 9 turns off the thyratron 10 and detector 8.
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