公开(公告)号：FR2929758B1

公开(公告)日：2011-02-11

申请号：FR0852302

申请日：2008-04-07

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： MOULET JEAN SEBASTIEN ,  DI CIOCCIO LEA ,  MIGETTE MARION

IPC: H01L21/78

公开(公告)号：DE602005006324T2

公开(公告)日：2009-07-09

申请号：DE602005006324

申请日：2005-12-06

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： KOSTRZEWA MAREK ,  DI CIOCCIO LEA ,  DELAPIERRE GUILLAUME

IPC: C09J5/02

Abstract: A method for bonding two free surfaces, respectively of first and second different substrates, includes a formation step, on the free surface of the first substrate, of a self-assembled mono-molecular layer consisting of a thiol compound of the SH-R-X type, where -R is a carbonaceous chain and -X is a group selected from the group consisting in -H, -OH and -COOH, at least said free surface of the first substrate being formed by a material able to form molecular bonds with the -SH group of the thiol compound. The method also includes preparing the free surface of the second substrate consisting in saturating the free surface of the second substrate with -H groups if -X is a -H group or with -OH groups if -X is selected from the group consisting in -OH and -COOH, and placing the two free surfaces in contact.

公开(公告)号：FR2925221A1

公开(公告)日：2009-06-19

申请号：FR0759893

申请日：2007-12-17

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： DI CIOCCIO LEA

IPC: H01L21/762

Abstract: L'invention concerne un procédé de transfert d'une couche mince (5) à partir d'un substrat (1) initial comportant les étapes suivantes :a) assemblage par collage direct de ce substrat (1) initial avec une face (25) d'une couche (20) de polymère de type silicone, cette face ayant subi un traitement sous rayonnement ultra-violet,c) amincissement du substrat (1) initial, pour former la couche mince (5) sur la couche (20) de polymère de type silicone.

公开(公告)号：DE602005004945D1

公开(公告)日：2008-04-10

申请号：DE602005004945

申请日：2005-03-15

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： FEDELI JEAN-MARC ,  DI CIOCCIO LEA

IPC: G02B6/43 ,  G02B6/12 ,  G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  H05K1/02

Abstract: The method involves forming an optical waveguide in a silicon layer of a SOI plate having a silicon substrate and an intermediate oxide layer (62). The waveguide is assembled with a CMOS type electronic circuit. An active optical component e.g. photo detector, is formed over the assembly of waveguide and electronic circuit, provided on the layer (62) which has thickness of 100 nanometers (nm) with a uniformity of +/- 10 nm. An independent claim is also included for an optoelectronic device.

公开(公告)号：FR2895562A1

公开(公告)日：2007-06-29

申请号：FR0554110

申请日：2005-12-27

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  CENTRE NAT RECH SCIENT ,  LYON ECOLE CENTRALE

Inventor： DI CIOCCIO LEA ,  BORDEL DAMIEN ,  GRENET GENEVIEVE ,  REGRENY PHILIPPE

IPC: H01L21/20 ,  C30B25/18

Abstract: L'invention concerne un procédé de relaxation d'une couche mince contrainte, solidaire par une première face principale d'un support initial, la deuxième face principale de la couche mince étant dite face de contact, le procédé comprenant les étapes successives suivantes :- fourniture d'un support intermédiaire comprenant une couche de polymère reposant, par l'une de ses faces principales, sur un substrat, et dont l'autre face principale est dite face de contact, le coefficient de dilatation thermique du polymère étant supérieur à celui de la couche mince,- mise en contact adhérent de la face de contact de la couche mince contrainte avec la face de contact de la couche de polymère,- élimination du support initial, provoquant ainsi la relaxation de la couche mince par formation d'ondulations et révélant la première face principale de la couche mince,- augmentation de la température de la couche de polymère afin d'étirer la couche mince relaxée et de supprimer les ondulations,- solidarisation de la première face principale de la couche mince avec une face d'un substrat de réception,- élimination du support intermédiaire pour obtenir une couche mince relaxée solidaire du substrat de réception.

公开(公告)号：FR2863405B1

公开(公告)日：2006-02-03

申请号：FR0350999

申请日：2003-12-08

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： MORICEAU HUBERT ,  MORALES CHRISTOPHE ,  DI CIOCCIO LEA

IPC: H01L21/18 ,  H01L21/20 ,  H01L21/98 ,  H01L25/16 ,  H01L25/065 ,  H05K13/04

Abstract: The molecular adhesion of a second electronic composite on to a first electronic composite (1), the contact surface of the first containing a polymer (4), comprises the coating by a linking layer (5) of at least a part of the polymer surface. The molecular adhesion takes place between the linking layer and the second electronic composite. An independent claim is also included for a three-dimensional matrix of electronic composites produced by this method of molecular adhesion.

公开(公告)号：FR2867898A1

公开(公告)日：2005-09-23

申请号：FR0450535

申请日：2004-03-17

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： FEDELI JEAN MARC ,  DI CIOCCIO LEA

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  G02B6/43 ,  H05K1/02 ,  H01L21/71 ,  G02B6/42 ,  G02B6/10 ,  H01L31/0352

Abstract: The method involves forming an optical waveguide in a silicon layer of a SOI plate having a silicon substrate and an intermediate oxide layer (62). The waveguide is assembled with a CMOS type electronic circuit. An active optical component e.g. photo detector, is formed over the assembly of waveguide and electronic circuit, provided on the layer (62) which has thickness of 100 nanometers (nm) with a uniformity of +/- 10 nm. An independent claim is also included for an optoelectronic device.

公开(公告)号：FR2844095B1

公开(公告)日：2005-01-28

申请号：FR0210884

申请日：2002-09-03

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： TEMPLIER FRANCOIS ,  DI CIOCCIO LEA ,  BILLON THIERRY ,  LETERTRE FABRICE

IPC: H01L29/872 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L21/338 ,  H01L21/76 ,  H01L27/12 ,  H01L29/47 ,  H01L29/786 ,  H01L29/812 ,  H01L29/861 ,  H01L21/762 ,  H01L29/06

公开(公告)号：FR2842648B1

公开(公告)日：2005-01-14

申请号：FR0209118

申请日：2002-07-18

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  SOITEC SILICON ON INSULATOR

Inventor： DI CIOCCIO LEA ,  LETERTRE FABRICE ,  HUGONNARD BRUYERE ELSA

IPC: C23C14/48 ,  H01L21/205 ,  H01L21/76 ,  H01L21/762 ,  H01L21/265 ,  H01L21/322 ,  H01L21/324

Abstract: A method for transferring an electrically active thin film from an initial substrate to a target substrate including: ion implantation through one face of the initial substrate to create a buried, embrittled film at a determined depth relative to the implanted face of the initial substrate, thus delimiting a thin film between the implanted face and the buried face; fastening the implanted face of the initial substrate with a face of the target substrate; separating the thin film from the remainder of the initial substrate at the level of the buried film; and thinning down the thin film transferred on the target substrate. The implantation dosage, energy, and current are chosen, during the ion implantation, so that concentration in implantation defects is less than a determined threshold, resulting in, within the thinned down thin film, a number of acceptor defects compatible with desired electrical properties of the thin film.

公开(公告)号：FR2844095A1

公开(公告)日：2004-03-05

申请号：FR0210884

申请日：2002-09-03

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： TEMPLIER FRANCOIS ,  DI CIOCCIO LEA ,  BILLON THIERRY ,  LETERTRE FABRICE

IPC: H01L29/872 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L21/338 ,  H01L21/76 ,  H01L27/12 ,  H01L29/47 ,  H01L29/786 ,  H01L29/812 ,  H01L29/861 ,  H01L21/762 ,  H01L29/06

Abstract: Fabrication of a composite SiCOI substrate comprises the provision of an initial substrate incorporating a support (1) of Si or SiC supporting a layer (2) of SiO2 carrying a thin film (3) of SiC and the epitaxy of SiC (4) on the thin film of SiC. The epitaxy is realised at the following temperatures: (a) from 1450 degrees C to obtain an epitaxy of polytype 6H or 4H on a carried thin film of polytype 6H or 4H respectively, if the support is of SiC; (b) from 1350 degrees C to obtain an epitaxy of polytype 3C on a carried thin layer of polytype 3C, if the support is of Si or SiC; (c) from 1350 degrees C to obtain an epitaxy of polytype 6H or 4H on a carried thin film of polytype 6H or 4H respectively, if the support is of Si. An Independent claim is also included for a semiconductor device produced on a composite SiCOI substrate obtained.