公开(公告)号：US20230098957A1

公开(公告)日：2023-03-30

申请号：US17485235

申请日：2021-09-24

Applicant: INTEL CORPORATION

Inventor： Feras Eid ,  Aleksandar Aleksov ,  Adel Elsherbini ,  Henning Braunisch

IPC: H01L23/00

Abstract: A conformal power delivery structure, a three-dimensional (3D) stacked die assembly, a system including the 3D stacked die assembly, and a method of forming the conformal power delivery structure. The power delivery structure includes a package substrate, a die adjacent to and electrically coupled to the package substrate; a first power plane adjacent the upper surface of the package substrate and electrically coupled thereto; a second power plane at least partially within recesses defined by the first power plane and having a lower surface that conforms with the upper surface of the first power plane; and a dielectric material between the first power plane and the second power plane.

公开(公告)号：US20230094979A1

公开(公告)日：2023-03-30

申请号：US17484299

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Henning Braunisch ,  Feras Eid ,  Adel Elsherbini ,  Stephen Morein ,  Yoshihiro Tomita ,  Thomas L. Sounart ,  Johanna Swan ,  Brandon M. Rawlings

IPC: H01L23/50 ,  H01L23/532

Abstract: Technologies for conformal power delivery structures near high-speed signal traces are disclosed. In one embodiment, a dielectric layer may be used to keep a power delivery structure spaced apart from high-speed signal traces, preventing deterioration of signals on the high-speed signal traces due to capacitive coupling to the power delivery structure.

公开(公告)号：US11532574B2

公开(公告)日：2022-12-20

申请号：US16394905

申请日：2019-04-25

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Georgios Dogiamis ,  Telesphor Kamgaing ,  Gilbert W. Dewey ,  Hyung-Jin Lee

IPC: H01L21/00 ,  H01L23/66 ,  H01L23/13 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01P3/16 ,  H01P3/06 ,  H01P11/00

Abstract: Embodiments may relate to a semiconductor package that includes a die and a package substrate. The package substrate may include one or more cavities that go through the package substrate from a first side of the package substrate that faces the die to a second side of the package substrate opposite the first side. The semiconductor package may further include a waveguide communicatively coupled with the die. The waveguide may extend through one of the one or more cavities such that the waveguide protrudes from the second side of the package substrate. Other embodiments may be described or claimed.

公开(公告)号：US20220399324A1

公开(公告)日：2022-12-15

申请号：US17344348

申请日：2021-06-10

Applicant: Intel Corporation

Inventor： Han Wui Then ,  Adel A. Elsherbini ,  Kimin Jun ,  Johanna M. Swan ,  Shawna M. Liff ,  Sathya Narasimman Tiagaraj ,  Gerald S. Pasdast ,  Aleksandar Aleksov ,  Feras Eid

IPC: H01L25/00 ,  H01L25/065 ,  H01L23/00

Abstract: A die assembly comprising: a first component layer having conductive through-connections in an insulator, a second component layer comprising a die, and an active device layer (ADL) at an interface between the first component layer and the second component layer. The ADL comprises active elements electrically coupled to the first component layer and the second component layer. The die assembly further comprises a bonding layer electrically coupling the ADL to the second component layer. In some embodiments, the die assembly further comprises another ADL at another interface between the first component layer and a package support opposite to the interface. The first component layer may comprise another die having through-substrate vias (TSVs). The die and the another die may be fabricated using different process nodes.

公开(公告)号：US11495552B2

公开(公告)日：2022-11-08

申请号：US16024702

申请日：2018-06-29

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Thomas Sounart ,  Kristof Darmawikarta ,  Henning Braunisch ,  Prithwish Chatterjee ,  Andrew J. Brown

IPC: H01L23/64 ,  H01L23/498 ,  H01L21/48 ,  H01L23/00

Abstract: Embodiments include an electronic package that includes a dielectric layer and a capacitor on the dielectric layer. In an embodiment, the capacitor comprises a first electrode disposed over the dielectric layer and a capacitor dielectric layer over the first electrode. In an embodiment, the capacitor dielectric layer is an amorphous dielectric layer. In an embodiment, the electronic package may also comprise a second electrode over the capacitor dielectric layer.

公开(公告)号：US11488918B2

公开(公告)日：2022-11-01

申请号：US16177022

申请日：2018-10-31

Applicant: Intel Corporation

Inventor： Kristof Darmawaikarta ,  Robert May ,  Sashi Kandanur ,  Sri Ranga Sai Boyapati ,  Srinivas Pietambaram ,  Steve Cho ,  Jung Kyu Han ,  Thomas Heaton ,  Ali Lehaf ,  Ravindranadh Eluri ,  Hiroki Tanaka ,  Aleksandar Aleksov ,  Dilan Seneviratne

IPC: H01L21/00 ,  H01L23/00 ,  H01L23/522 ,  H01L21/768

Abstract: Embodiments described herein include electronic packages and methods of forming such packages. An electronic package includes a package substrate, first conductive pads formed over the package substrate, where the first conductive pads have a first surface area, and second conductive pads over the package substrate, where the second conductive pads have a second surface area greater than the first surface area. The electronic package also includes a solder resist layer over the first and second conductive pads, and a plurality of solder resist openings that expose one of the first or second conductive pads. The solder resist openings of the electronic package may include conductive material that is substantially coplanar with a top surface of the solder resist layer. The electronic package further includes solder bumps over the conductive material in the solder resist openings, where the solder bumps have a low bump thickness variation (BTV).

公开(公告)号：US11421376B2

公开(公告)日：2022-08-23

申请号：US16072165

申请日：2016-04-01

Applicant: Intel Corporation

Inventor： Shawna M. Liff ,  Feras Eid ,  Aleksandar Aleksov ,  Sasha N. Oster ,  Baris Bicen ,  Thomas L. Sounart ,  Valluri R. Rao ,  Johanna M. Swan

IPC: H01L41/047 ,  D06M10/06 ,  D06M11/46 ,  D06M11/47 ,  H01L41/316 ,  D06M17/00 ,  H01L41/087 ,  D06M11/83 ,  H01L41/187 ,  H01L41/29 ,  D01F11/00

Abstract: Embodiments of the invention include an active fiber with a piezoelectric layer that has a crystallization temperature that is greater than a melt or draw temperature of the fiber and methods of forming such active fibers. According to an embodiment, a first electrode is formed over an outer surface of a fiber. Embodiments may then include depositing a first amorphous piezoelectric layer over the first electrode. Thereafter, the first amorphous piezoelectric layer may be crystallized with a pulsed laser annealing process to form a first crystallized piezoelectric layer. In an embodiment, the pulsed laser annealing process may include exposing the first amorphous piezoelectric layer to radiation from an excimer laser with an energy density between approximately 10 and 100 mJ/cm2 and pulse width between approximately 10 and 50 nanoseconds. Embodiments may also include forming a second electrode over an outer surface of the crystallized piezoelectric layer.

公开(公告)号：US11387187B2

公开(公告)日：2022-07-12

申请号：US16021966

申请日：2018-06-28

Applicant: Intel Corporation

Inventor： Andrew Paul Collins ,  Jianyong Xie ,  Sujit Sharan ,  Henning Braunisch ,  Aleksandar Aleksov

IPC: H01L23/495 ,  H01L23/053 ,  H01L23/48 ,  H01L21/4763 ,  H01L23/538 ,  H01L25/065 ,  H01L21/48 ,  H01L23/498 ,  H01L23/522 ,  H01L21/768 ,  H01L23/528 ,  H01L25/07

Abstract: Embodiments may relate to an interposer that has a first layer with a plurality of first layer pads that may couple with a die. The interposer may further include a second layer with a power delivery component. The interposer may further include a very high density (VHD) layer, that has a VHD pad coupled by a first via with the power delivery component and coupled by a second via with a first layer pad. Other embodiments may be described and/or claimed.

公开(公告)号：US20220201843A1

公开(公告)日：2022-06-23

申请号：US17695118

申请日：2022-03-15

Applicant: Intel Corporation

Inventor： Georgios Dogiamis ,  Aleksandar Aleksov ,  Feras Eid ,  Telesphor Kamgaing ,  Johanna M. Swan

IPC: H05K1/02 ,  H05K1/16 ,  H05K3/12 ,  H05K3/40 ,  H05K9/00

Abstract: Embodiments may relate to a microelectronic package or a die thereof which includes a die, logic, or subsystem coupled with a face of the substrate. An inductor may be positioned in the substrate. Electromagnetic interference (EMI) shield elements may be positioned within the substrate and surrounding the inductor. Other embodiments may be described or claimed.

公开(公告)号：US20220189861A1

公开(公告)日：2022-06-16

申请号：US17121093

申请日：2020-12-14

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Mohammad Enamul Kabir ,  Adel A. Elsherbini ,  Shawna M. Liff ,  Johanna M. Swan ,  Feras Eid

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/538

Abstract: Disclosed herein are microelectronic assemblies including microelectronic components coupled by direct bonding, and related structures and techniques. In some embodiments, a microelectronic assembly may include a first microelectronic component including a first guard ring extending through at least a portion of a thickness of and along a perimeter; a second microelectronic component including a second guard ring extending through at least a portion of a thickness of and along a perimeter, where the first and second microelectronic components are coupled by direct bonding; and a seal ring formed by coupling the first guard ring to the second guard ring. In some embodiments, a microelectronic assembly may include a microelectronic component coupled to an interposer that includes a first liner material at a first surface; a second liner material at an opposing second surface; and a perimeter wall through the interposer and connected to the first and second liner materials.