公开(公告)号：US12009271B2

公开(公告)日：2024-06-11

申请号：US16511360

申请日：2019-07-15

Applicant: Intel Corporation

Inventor： Edvin Cetegen ,  Jacob Vehonsky ,  Nicholas S. Haehn ,  Thomas Heaton ,  Steve S. Cho ,  Rahul Jain ,  Tarek Ibrahim ,  Antariksh Rao Pratap Singh ,  Nicholas Neal ,  Sergio Chan Arguedas ,  Vipul Mehta

IPC: H01L23/16 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L23/16 ,  H01L23/3185 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/16227 ,  H01L2924/18161

Abstract: Embodiments disclosed herein include electronic packages with underfill flow control features. In an embodiment, an electronic package comprises a package substrate and a plurality of interconnects on the package substrate. In an embodiment, a die is coupled to the package substrate by the plurality of interconnects and a flow control feature is adjacent on the package substrate. In an embodiment, the flow control feature is electrically isolated from circuitry of the electronic package. In an embodiment, the electronic package further comprises an underfill surrounding the plurality of interconnects and in contact with the flow control feature.

公开(公告)号：US20240096561A1

公开(公告)日：2024-03-21

申请号：US17948586

申请日：2022-09-20

Applicant: Intel Corporation

Inventor： Mahdi Mohammadighaleni ,  Benjamin Duong ,  Shayan Kaviani ,  Joshua Stacey ,  Miranda Ngan ,  Dilan Seneviratne ,  Thomas Heaton ,  Srinivas Venkata Ramanuja Pietambaram ,  Whitney Bryks ,  Jieying Kong

IPC: H01G4/33 ,  H01G4/012

CPC classification number: H01G4/33 ,  H01G4/012 ,  H01L28/92 ,  H01L25/16

Abstract: An apparatus, system, and method for in-situ three-dimensional (3D) thin-film capacitor (TFC) are provided. A 3D TFC can include a glass core, a through glass via (TGV) in the glass core including first conductive material, the first conductive material forming a first electrode of the 3D MIM capacitor, a second conductive material acting as a second electrode of the 3D MIM capacitor, and a dielectric material in contact with the first and second conductive materials, the dielectric material extending vertically and horizontally and physically separating the first and second conductive materials.

公开(公告)号：US11309239B2

公开(公告)日：2022-04-19

申请号：US17075533

申请日：2020-10-20

Applicant: Intel Corporation

Inventor： Srinivas Pietambaram ,  Jung Kyu Han ,  Ali Lehaf ,  Steve Cho ,  Thomas Heaton ,  Hiroki Tanaka ,  Kristof Darmawikarta ,  Robert Alan May ,  Sri Ranga Sai Boyapati

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/498 ,  H01L23/538 ,  H01L25/18 ,  H01L21/48 ,  H01L23/00 ,  H01L25/00

Abstract: A package assembly includes a substrate and at least a first die having a first contact array and a second contact array. First and second via assemblies are respectively coupled with the first and second contact arrays. Each of the first and second via assemblies includes a base pad, a cap assembly, and a via therebetween. One or more of the cap assembly or the via includes an electromigration resistant material to isolate each of the base pad and the cap assembly. Each first cap assembly and via of the first via assemblies has a first assembly profile less than a second assembly profile of each second cap assembly and via of the second via assemblies. The first and second cap assemblies have a common applied thickness in an application configuration. The first and second cap assemblies have a thickness variation of ten microns or less in a reflowed configuration.

公开(公告)号：US10854541B2

公开(公告)日：2020-12-01

申请号：US16554008

申请日：2019-08-28

Applicant: Intel Corporation

Inventor： Srinivas Pietambaram ,  Jung Kyu Han ,  Ali Lehaf ,  Steve Cho ,  Thomas Heaton ,  Hiroki Tanaka ,  Kristof Darmawikarta ,  Robert Alan May ,  Sri Ranga Sai Boyapati

IPC: H01L27/082 ,  H01L23/498 ,  H01L23/538 ,  H01L25/18 ,  H01L21/48 ,  H01L23/00 ,  H01L25/00

Abstract: A package assembly includes a substrate and at least a first die having a first contact array and a second contact array. First and second via assemblies are respectively coupled with the first and second contact arrays. Each of the first and second via assemblies includes a base pad, a cap assembly, and a via therebetween. One or more of the cap assembly or the via includes an electromigration resistant material to isolate each of the base pad and the cap assembly. Each first cap assembly and via of the first via assemblies has a first assembly profile less than a second assembly profile of each second cap assembly and via of the second via assemblies. The first and second cap assemblies have a common applied thickness in an application configuration. The first and second cap assemblies have a thickness variation of ten microns or less in a reflowed configuration.

公开(公告)号：US20190393145A1

公开(公告)日：2019-12-26

申请号：US16554008

申请日：2019-08-28

Applicant: Intel Corporation

Inventor： Srinivas V. Pietambaram ,  Jung Kyu Han ,  Ali Lehaf ,  Steve Cho ,  Thomas Heaton ,  Hiroki Tanaka ,  Kristof Darmawikarta ,  Robert Alan May ,  Sri Ranga Sai Boyapati

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/538 ,  H01L25/18 ,  H01L25/00 ,  H01L21/48

Abstract: A package assembly includes a substrate and at least a first die having a first contact array and a second contact array. First and second via assemblies are respectively coupled with the first and second contact arrays. Each of the first and second via assemblies includes a base pad, a cap assembly, and a via therebetween. One or more of the cap assembly or the via includes an electromigration resistant material to isolate each of the base pad and the cap assembly. Each first cap assembly and via of the first via assemblies has a first assembly profile less than a second assembly profile of each second cap assembly and via of the second via assemblies. The first and second cap assemblies have a common applied thickness in an application configuration. The first and second cap assemblies have a thickness variation of ten microns or less in a reflowed configuration.

公开(公告)号：US10431537B1

公开(公告)日：2019-10-01

申请号：US16014134

申请日：2018-06-21

Applicant: Intel Corporation

Inventor： Srinivas Pietambaram ,  Jung Kyu Han ,  Ali Lehaf ,  Steve Cho ,  Thomas Heaton ,  Hiroki Tanaka ,  Kristof Darmawikarta ,  Robert Alan May ,  Sri Ranga Sai Boyapati

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/498 ,  H01L23/538 ,  H01L25/18 ,  H01L21/48 ,  H01L23/00 ,  H01L25/00

Abstract: A package assembly includes a substrate and at least a first die having a first contact array and a second contact array. First and second via assemblies are respectively coupled with the first and second contact arrays. Each of the first and second via assemblies includes a base pad, a cap assembly, and a via therebetween. One or more of the cap assembly or the via includes an electromigration resistant material to isolate each of the base pad and the cap assembly. Each first cap assembly and via of the first via assemblies has a first assembly profile less than a second assembly profile of each second cap assembly and via of the second via assemblies. The first and second cap assemblies have a common applied thickness in an application configuration. The first and second cap assemblies have a thickness variation of ten microns or less in a reflowed configuration.

公开(公告)号：US11935857B2

公开(公告)日：2024-03-19

申请号：US17952080

申请日：2022-09-23

Applicant: Intel Corporation

Inventor： Kristof Darmawaikarta ,  Robert May ,  Sashi Kandanur ,  Sri Ranga Sai Boyapati ,  Srinivas Pietambaram ,  Steve Cho ,  Jung Kyu Han ,  Thomas Heaton ,  Ali Lehaf ,  Ravindranadh Eluri ,  Hiroki Tanaka ,  Aleksandar Aleksov ,  Dilan Seneviratne

IPC: H01L21/00 ,  H01L21/768 ,  H01L23/00 ,  H01L23/522

CPC classification number: H01L24/17 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/5226 ,  H01L24/09 ,  H01L24/11 ,  H01L2924/01029 ,  H01L2924/0105

Abstract: Embodiments described herein include electronic packages and methods of forming such packages. An electronic package includes a package substrate, first conductive pads formed over the package substrate, where the first conductive pads have a first surface area, and second conductive pads over the package substrate, where the second conductive pads have a second surface area greater than the first surface area. The electronic package also includes a solder resist layer over the first and second conductive pads, and a plurality of solder resist openings that expose one of the first or second conductive pads. The solder resist openings of the electronic package may include conductive material that is substantially coplanar with a top surface of the solder resist layer. The electronic package further includes solder bumps over the conductive material in the solder resist openings, where the solder bumps have a low bump thickness variation (BTV).

公开(公告)号：US11776864B2

公开(公告)日：2023-10-03

申请号：US16511376

申请日：2019-07-15

Applicant: Intel Corporation

Inventor： Jacob Vehonsky ,  Nicholas S. Haehn ,  Thomas Heaton ,  Steve S. Cho ,  Rahul Jain ,  Tarek Ibrahim ,  Antariksh Rao Pratap Singh ,  Edvin Cetegen ,  Nicholas Neal ,  Sergio Chan Arguedas

IPC: H01L23/16 ,  H01L23/498 ,  H01L23/367 ,  H01L23/00

CPC classification number: H01L23/16 ,  H01L23/3675 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/10152 ,  H01L2224/11011 ,  H01L2224/11462 ,  H01L2224/16227 ,  H01L2924/381

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment an electronic package comprises a package substrate, and a first level interconnect (FLI) bump region on the package substrate. In an embodiment, the FLI bump region comprises a plurality of pads, and a plurality of bumps, where each bump is over a different one of the plurality of pads. In an embodiment, the electronic package further comprises a guard feature adjacent to the FLI bump region. In an embodiment, the guard feature comprises, a guard pad, and a guard bump over the guard pad, wherein the guard feature is electrically isolated from circuitry of the electronic package.

公开(公告)号：US11488918B2

公开(公告)日：2022-11-01

申请号：US16177022

申请日：2018-10-31

Applicant: Intel Corporation

Inventor： Kristof Darmawaikarta ,  Robert May ,  Sashi Kandanur ,  Sri Ranga Sai Boyapati ,  Srinivas Pietambaram ,  Steve Cho ,  Jung Kyu Han ,  Thomas Heaton ,  Ali Lehaf ,  Ravindranadh Eluri ,  Hiroki Tanaka ,  Aleksandar Aleksov ,  Dilan Seneviratne

IPC: H01L21/00 ,  H01L23/00 ,  H01L23/522 ,  H01L21/768

Abstract: Embodiments described herein include electronic packages and methods of forming such packages. An electronic package includes a package substrate, first conductive pads formed over the package substrate, where the first conductive pads have a first surface area, and second conductive pads over the package substrate, where the second conductive pads have a second surface area greater than the first surface area. The electronic package also includes a solder resist layer over the first and second conductive pads, and a plurality of solder resist openings that expose one of the first or second conductive pads. The solder resist openings of the electronic package may include conductive material that is substantially coplanar with a top surface of the solder resist layer. The electronic package further includes solder bumps over the conductive material in the solder resist openings, where the solder bumps have a low bump thickness variation (BTV).

公开(公告)号：US20200006273A1

公开(公告)日：2020-01-02

申请号：US16022453

申请日：2018-06-28

Applicant: Intel Corporation

Inventor： Manish Dubey ,  Kousik Ganesan ,  Suddhasattwa Nad ,  Thomas Heaton ,  Sri Chaitra Jyotsna Chavali ,  Amruthavalli Pallavi Alur

IPC: H01L23/00 ,  H01L23/498 ,  H01L21/48

Abstract: A microelectronic device is formed including two or more structures physically and electrically engaged with one another through coupling of conductive features on the two structures. The conductive features may be configured to be tolerant of bump thickness variation in either of the structures. Such bump thickness variation tolerance can result from a contact structure on a first structure including a protrusion configured to extend in the direction of the second structure and to engage a deformable material on that second structure.