公开(公告)号：JP2005245061A

公开(公告)日：2005-09-08

申请号：JP2004048128

申请日：2004-02-24

Applicant: Matsushita Electric Works Ltd ,  松下電工株式会社

Inventor： HARADA HIROSHI ,  OKA NAOMASA ,  SUZUKI YUJI ,  FUKUSHIMA HIROSHI ,  NOGE HIROSHI ,  OGIWARA ATSUSHI ,  KONO KIYOHIKO ,  USHIYAMA NAOKI ,  YOSHIHARA TAKAAKI

IPC: G02B26/02 ,  B81B3/00 ,  H02N1/00

Abstract: PROBLEM TO BE SOLVED: To provide an actuator that stably releases a latch state of being held by an engagement unit, and an optical device. SOLUTION: The actuator comprises: central electrode units 13, 14 displaceable in first and second directions; the engagement unit 2a that is held in at least one state out of first and second displaced states and a central state by being engaged with the central electrode unit; a first side electrode unit 18 that applies stress to the central electrode unit in the first direction and releases the second displaced state that the engagement unit is held by being displaced in the second direction; and a second side electrode unit 21 that imparts stress to the central electrode unit in the second direction and releases the first displaced state that the engagement unit is held by being displaced in the first direction. When the first side electrode unit starts the release operation of the second displaced state or the central state, the second side electrode unit imparts stress to the central electrode unit in the second direction. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种稳定地释放由接合单元保持的闩锁状态的致动器和光学装置。 解决方案：致动器包括：可在第一和第二方向上移位的中心电极单元13,14; 通过与中心电极单元接合而保持在第一和第二移位状态中的至少一个状态的接合单元2a和中心状态; 第一侧电极单元18，其在第一方向上向中心电极单元施加应力，并且通过沿第二方向移位而释放接合单元被保持的第二位移状态; 以及第二侧面电极单元21，其在第二方向上向中心电极单元施加应力，并且通过沿第一方向移位而释放接合单元被保持的第一位移状态。 当第一侧电极单元开始第二位移状态或中心状态的释放操作时，第二侧电极单元在第二方向上向中心电极单元施加应力。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005096069A

公开(公告)日：2005-04-14

申请号：JP2004247322

申请日：2004-08-26

Applicant: Matsushita Electric Works Ltd ,  松下電工株式会社

Inventor： HARADA HIROSHI ,  OKA NAOMASA ,  SUZUKI YUJI ,  FUKUSHIMA HIROSHI ,  NOGE HIROSHI ,  OGIWARA ATSUSHI ,  KONO KIYOHIKO

IPC: G02B26/08 ,  B81B3/00

Abstract: PROBLEM TO BE SOLVED: To provide an actuator and optical device capable of displacing a movable part to a plurality of states by voltage application for a short time and holding the states. SOLUTION: This actuator and optical device have a central electrode unit capable of displacing in each of a first direction and a second direction opposed to the first direction, a fitting unit for holding the central electrode unit in at least one state of the first displacement state for displacing the central electrode unit in the first direction, the second displacement state for displacing the unit in the second direction, a center state in which the unit does not displace in either one of the first and second directions, a first side electrode unit for releasing the second displacement state or the center state held by the fitting unit by displacement in the second direction, and a second side electrode unit for releasing the first displacement state or the center state held by the fitting unit by displacement in the first direction. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种致动器和光学装置，其能够通过短时间的电压施加将可动部件移动到多个状态并保持状态。 解决方案：该致动器和光学装置具有能够沿与第一方向相反的第一方向和第二方向各自位移的中心电极单元，用于将中心电极单元保持在至少一个状态的装配单元 用于使所述中心电极单元沿第一方向移位的第一位移状态，用于使所述单元沿所述第二方向移位的所述第二位移状态，所述单元在所述第一和第二方向中的任一方向上不移位的中心状态;第一侧 电极单元，用于通过在第二方向上的位移来释放由装配单元保持的第二位移状态或中心状态;以及第二侧电极单元，用于通过位移在第一方向上释放由装配单元保持的第一位移状态或中心状态 方向。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005096009A

公开(公告)日：2005-04-14

申请号：JP2003331135

申请日：2003-09-24

Applicant: Matsushita Electric Works Ltd ,  松下電工株式会社

Inventor： JOMI HIROTAKA ,  OKA NAOMASA ,  YOSHIHARA TAKAAKI ,  FUKUSHIMA HIROSHI ,  NOGE HIROSHI ,  SUZUKI YUJI ,  HARADA HIROSHI ,  USHIYAMA NAOKI

IPC: G02B26/08 ,  B81C1/00

Abstract: PROBLEM TO BE SOLVED: To prevent side etching at both longitudinal ends of a plate-like structure to carry out integration. SOLUTION: A semiconductor substrate (a silicon substrate) is wet-etched to form the plate-like structure with the side faces formed as (111) faces almost perpendicular to the main surface of the substrate. At this time, etching is performed to form compensation parts 22 at both longitudinal ends of the plate-like structure. The compensation part is composed of an extended part 23 extending each end of the plate-like structure, and a (111) face structure part 24 extending in a (111) face direction intersecting the plate-like structure. Side etching occurs at the (111) face structure part. There is therefore no need to take side etching into consideration when setting the length of the plate-like structure. The formed plate-like structure is used as a mirror in an optical switching device. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了防止板状结构的两个纵向端部的侧面蚀刻以进行一体化。 解决方案：半导体衬底（硅衬底）被湿式蚀刻以形成板状结构，其侧面形成为（111）面几乎垂直于衬底的主表面。 此时，进行蚀刻以在板状结构的两个纵向端部处形成补偿部22。 补偿部分由延伸部分23构成，延伸部分23延伸到板状结构的每一端，以及（111）面结构部分24，其沿与板状结构相交的（111）面方向延伸。 在（111）面结构部分发生侧面蚀刻。 因此，在设定板状结构的长度时，不需要考虑侧面蚀刻。 所形成的板状结构用作光开关装置中的反射镜。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005066805A

公开(公告)日：2005-03-17

申请号：JP2003303443

申请日：2003-08-27

Applicant: Matsushita Electric Works Ltd ,  松下電工株式会社

Inventor： FUKUSHIMA HIROSHI ,  HARADA HIROSHI ,  OKA NAOMASA ,  NOGE HIROSHI ,  SUZUKI YUJI ,  OGIWARA ATSUSHI ,  KONO KIYOHIKO

IPC: G02B26/08 ,  B81B3/00 ,  H02N1/00

Abstract: PROBLEM TO BE SOLVED: To provide a small and highly yielding drive device and optical device. SOLUTION: This drive device is arranged in a first layer and a second layer overlapped on a first layer through an intermediate and has a drive part having a fixed electrode and a movable electrode arranged in the first layer and meshing with each other, a movable plate arranged in the second layer and a flexible supporting part connected to the movable electrode and the movable plate. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种小而高效的驱动装置和光学装置。 解决方案：该驱动装置布置在第一层中，第二层通过中间层重叠在第一层上，并且具有驱动部分，其具有固定电极和布置在第一层中的可动电极并彼此啮合， 布置在第二层中的可动板和连接到可动电极和可移动​​板的柔性支撑部分。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004341262A

公开(公告)日：2004-12-02

申请号：JP2003138046

申请日：2003-05-16

Applicant: Matsushita Electric Works Ltd ,  松下電工株式会社

Inventor： HARADA HIROSHI ,  NOGE HIROSHI ,  OKA NAOMASA ,  FUKUSHIMA HIROSHI ,  OGIWARA ATSUSHI ,  KONO KIYOHIKO ,  JOMI HIROTAKA ,  TSUJI KOJI

IPC: G02B6/00

Abstract: PROBLEM TO BE SOLVED: To provide an optical fiber fixing structure capable of positioning an optical fiber with high accuracy even when foreign matters, such as dust and contaminant, are present in manufacturing environment, to provide an optical device provided with the same, and to provide a manufacturing method of the optical device. SOLUTION: In the optical fiber fixing structure S for inserting an optical fiber F into a fiber insertion part 2 formed in the shape of groove on the surface 1a of a substrate 1 and fix it, a foreign matter removal part 3 storing foreign matters is arranged so as to be open toward the fiber insertion part 2 and to occupy the most part of the part 2 in the groove direction by the opening. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 解决问题的方案为了提供即使在制造环境中存在诸如灰尘和污染物等异物也能够高精度地定位光纤的光纤固定结构，以提供具有该光纤固定结构的光学装置 并且提供一种光学装置的制造方法。 解决方案：在用于将光纤F插入形成为基板1的表面1a上的凹槽形状的光纤插入部分2并固定的光纤固定结构S中，存储外部的异物去除部分3 布置成朝向纤维插入部2开放，并且通过开口在槽方向上占据部分2的大部分。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004082288A

公开(公告)日：2004-03-18

申请号：JP2002247802

申请日：2002-08-27

Applicant: Matsushita Electric Works Ltd ,  松下電工株式会社

Inventor： MURAI AKIHIKO ,  HASEGAWA YUYA ,  KIRIHARA MASAO ,  OKA NAOMASA ,  HIRATA KATSUHIRO ,  KAWADA HIROSHI ,  TAKAKURA NOBUYUKI ,  MIYAJIMA HISAKAZU ,  OGIWARA ATSUSHI ,  YAMAMOTO MASAHIRO ,  MITSUTAKE YOSHIO

IPC: G02B26/08 ,  B81B3/00 ,  H02N1/00

Abstract: PROBLEM TO BE SOLVED: To provide a small electrostatic actuator suitable for an optical switch, particularly a large-scale matrix optical switch.
SOLUTION: The small electrostatic actuator comprises a fixed member 1, a driving member 2 and a rotary supporting member 3. The fixed member 1 has a fixed frame section 11 and a fixed electrode section 12 comprising a fixed comb-shaped electrode part 121 and a fixed comb-shaped connection part 122. The driving member 2 moved by electrostatic power against the fixed electrode section has a movable electrode section 21 comprising a movable comb-shaped electrode part 211 and a movable comb-shaped connection part 212 and being insulated electrically from the fixed electrode section, a working section 23 which moves for a distance longer than the stroke of the movable electrode section in conjunction with the move of the movable electrode section, and a displacement section 22 connecting the movable electrode section and the working section. The rotary supporting member 3 connects, with the fixed frame section, a portion nearer to the movable electrode section than the center position of a straight line linking the working section of the driving member to the movable electrode section, and supports the displacement section oscillating with the move of the movable electrode section.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2002353460A

公开(公告)日：2002-12-06

申请号：JP2001158328

申请日：2001-05-28

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： OGIWARA ATSUSHI ,  OKA NAOMASA ,  SUZUKI YUJI

IPC: H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device where irregularities of the characteristics are reduced, and stable yield can be obtained. SOLUTION: A field oxide film 3 is formed on a surface of an N type active layer 2. The field oxide film 3 in a part, where an N type source region of high concentration and an N type drain region of high concentration are formed, is eliminated by a photolithographic process and an etching process, and aperture parts 4a, 4b are formed. In this case, a plurality of mask patterns of the photolithographic process are prepared. A mask pattern, whose drift length Ld is short is used for each wafer of one lot where the average value of thickness of active layers 1c, is at least a specified value. A mask pattern, whose drift length Ld is long is used for each wafer of one lot where the average value of thickness of the active layers 1c is less than the specified value.

公开(公告)号：JP2002353379A

公开(公告)日：2002-12-06

申请号：JP2001158295

申请日：2001-05-28

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： OGIWARA ATSUSHI ,  OKA NAOMASA

IPC: H01L23/29 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/31 ,  H01L23/52 ,  H01L27/04 ,  H01L27/14 ,  H01L31/12

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device improving reliability and its manufacturing method. SOLUTION: A light shielding film 14 is arranged opposite to a protection film 13 covering a semiconductor device in the main surface side of a substrate 1, and a gap between the protection film 13 and the light shielding film 14 is held a prescribed distance by a support part 15 consisting of the same metal material as the light shielding film 14. The light shielding film 14 is rectangularly formed in a face orthogonal to the thickness direction of the substrate 1, and the support part 15 is formed along one side of the light shielding film 14. The light shielding film 14 and the support part 15 are continuously integrally formed. Thus, the gap is formed between the light shielding film 14 and the protection film 13, and the light shielding film 14 and the protection film 13 are continued to only the support part 15 formed by the same metal material as the light shielding film 14.

公开(公告)号：JP2001093908A

公开(公告)日：2001-04-06

申请号：JP27152299

申请日：1999-09-27

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： OGIWARA ATSUSHI ,  OKA NAOMASA

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which has a small element area and can suppress damages caused by wire bonding, and a method for manufactur ing the device. SOLUTION: In a semiconductor device, an n+-type drain diffusion areas 4 which is formed as an impurity diffusion layer is formed in the n-type silicon layer (silicon active layer) of an SOI substrate constituted by forming the silicon layer 3 on a single-crystal silicon substrate 1 through a silicon oxide insulating layer 2. The surface-side part of the portion overlapping the diffusion area 4 of a drain electrode 7 constituting metallic wiring becomes a drain pad 17 serving as a bonding pad. An impact relieving section 9 composed of a silicon oxide film is provided between the drain pad 17 and the diffusion area 4 so as to relieve the impact given to the diffusion area 4 at the time of performing wire bonding. The impact relieving section 9 is formed on the portion overlapping the drain pad 17 of the diffusion area 4.

公开(公告)号：JP2001007112A

公开(公告)日：2001-01-12

申请号：JP17763299

申请日：1999-06-24

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： OKUTO TAKASHI ,  OKA NAOMASA ,  OGIWARA ATSUSHI

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming an aluminum wiring good in surface condition. SOLUTION: In a method of forming an aluminum wiring comprising the step of forming an insulation layer 2 on one main surface of a semiconductor substrate 1, the step of removing a part of the insulation layer 2 to expose the surface of the semiconductor substrate 1 surface the step of, forming an Al wiring 3 with a specified pattern on the exposed surface of the substrate 1 and the insulation layer 2, and the step of forming a passivation film 4 on the insulation layer 2 and the Al wiring 3, silicon 34 is implanted only at positions corresponding to the exposed part of the substrate 1 in at least either the Al wiring 3 or the semiconductor substrate 1.