公开(公告)号：US20170104140A1

公开(公告)日：2017-04-13

申请号：US15389476

申请日：2016-12-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Jinwei Yang ,  Michael Shur

IPC: H01L33/56 ,  H01L33/48 ,  H01L31/024 ,  H01L33/50 ,  H01L31/0203 ,  H01L31/0232 ,  H01L33/58 ,  H01L33/64

CPC classification number: H01L33/56 ,  C09D163/00 ,  H01L31/0203 ,  H01L31/02322 ,  H01L31/02327 ,  H01L31/024 ,  H01L33/502 ,  H01L33/641 ,  H01L2933/0091 ,  Y10T428/23

Abstract: A composite material, which can be used as an encapsulant for an ultraviolet device, is provided. The composite material includes a matrix material and at least one filler material incorporated in the matrix material that are both at least partially transparent to ultraviolet radiation of a target wavelength. The filler material includes microparticles and/or nanoparticles and can have a thermal coefficient of expansion significantly smaller than a thermal coefficient of expansion of the matrix material for relevant atmospheric conditions. The relevant atmospheric conditions can include a temperature and a pressure present during each of: a curing and a cool down process for fabrication of a device package including the composite material and normal operation of the ultraviolet device within the device package.

公开(公告)号：US09562171B2

公开(公告)日：2017-02-07

申请号：US13624162

申请日：2012-09-21

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Jinwei Yang ,  Michael Shur

IPC: C09D163/00 ,  C09K11/02 ,  H01L33/56

CPC classification number: C09D163/00 ,  C09K11/02 ,  C09K11/08 ,  H01L33/56 ,  Y10T428/23

Abstract: A composite material, which can be used as an encapsulant for an ultraviolet device, is provided. The composite material includes a matrix material and at least one filler material incorporated in the matrix material that are both at least partially transparent to ultraviolet radiation of a target wavelength. The filler material includes microparticles and/or nanoparticles and can have a thermal coefficient of expansion significantly smaller than a thermal coefficient of expansion of the matrix material for relevant atmospheric conditions. The relevant atmospheric conditions can include a temperature and a pressure present during each of: a curing and a cool down process for fabrication of a device package including the composite material and normal operation of the ultraviolet device within the device package.

Abstract translation: 提供了可用作紫外线装置的密封剂的复合材料。 复合材料包括基体材料和掺入基质材料中的至少部分对目标波长的紫外线辐射部分透明的填料。 填充材料包括微粒和/或纳米颗粒，并且可以具有明显小于相关大气条件下的基质材料的热膨胀系数的热膨胀系数。 相关的大气条件可以包括以下各项中存在的温度和压力：用于制造包括复合材料的器件封装的固化和冷却过程以及器件封装内的紫外线器件的正常操作。

公开(公告)号：US09406840B2

公开(公告)日：2016-08-02

申请号：US14984342

申请日：2015-12-30

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Jinwei Yang ,  Remigijus Gaska ,  Mikhail Gaevski

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/18 ,  H01L33/30 ,  H01L33/32 ,  H01L33/382 ,  H01L2224/14 ,  H01L2933/0016 ,  H01S5/3209 ,  H01S5/3413 ,  H01S5/34333

Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.

公开(公告)号：US09397260B2

公开(公告)日：2016-07-19

申请号：US13647885

申请日：2012-10-09

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Wenhong Sun ,  Jinwei Yang ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L27/15 ,  H01L31/072 ,  H01L33/22 ,  H01L33/12 ,  H01L33/32 ,  H01L21/02 ,  H01L29/66 ,  H01L29/20 ,  H01L29/34 ,  H01L29/778 ,  H01L33/24

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02658 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/34 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0091

Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.

Abstract translation: 提供具有具有用于改善半导体层的生长的图案化表面的层的器件，例如具有高浓度铝的III族氮化物基半导体层。 图案化表面可以包括基本上平坦的顶表面和多个减压区域，例如开口。 基本上平坦的顶表面可以具有小于约0.5纳米的均方根粗糙度，并且应力减小区域可以具有在约0.1微米至约5微米之间的特征尺寸和至少0.2微米的深度。 III族氮化物材料层可以在第一层上生长并且具有至少是应力减小区域的特征尺寸的两倍的厚度。

公开(公告)号：US09330906B2

公开(公告)日：2016-05-03

申请号：US14266900

申请日：2014-05-01

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Jinwei Yang ,  Wenhong Sun ,  Rakesh Jain ,  Michael Shur ,  Remigijus Gaska

IPC: H01L31/00 ,  H01L21/02 ,  H01L29/20 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L29/158 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/007 ,  H01L33/12

Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.

公开(公告)号：US20160118531A1

公开(公告)日：2016-04-28

申请号：US14944538

申请日：2015-11-18

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Maxim S. Shatalov ,  Jinwei Yang ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/00 ,  H01L33/14

CPC classification number: H01L33/002 ,  H01L31/022408 ,  H01L31/035236 ,  H01L31/105 ,  H01L33/0062 ,  H01L33/025 ,  H01L33/04 ,  H01L33/145 ,  H01L33/32 ,  H01L2933/0008

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

公开(公告)号：US20160093771A1

公开(公告)日：2016-03-31

申请号：US14660125

申请日：2015-03-17

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/32 ,  G06F17/50 ,  H01L33/22 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L33/22 ,  G06F17/5068 ,  G06F2217/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2224/16225

Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns. One or more of the substantially flat top surfaces can be patterned based on target radiation.

Abstract translation: 提供了用于改善半导体层的生长的图案化表面，例如III族氮化物基半导体层。 图案化表面可以包括一组基本平坦的顶表面和多个开口。 每个基本上平坦的顶表面可以具有小于约0.5纳米的均方根粗糙度，并且开口可以具有在约0.1微米和5微米之间的特征尺寸。 基本平坦的顶表面中的一个或多个可以基于目标辐射进行图案化。

公开(公告)号：US20150337442A1

公开(公告)日：2015-11-26

申请号：US14804401

申请日：2015-07-21

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： Igor Agafonov ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska ,  Alexander Dobrinsky

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  C23C16/52

CPC classification number: C23C16/45565 ,  C23C16/45563 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/0254 ,  H01L21/0262 ,  H01L22/12 ,  H01L22/26

Abstract: A solution for manufacturing semiconductors is provided. An embodiment provides a chemical vapor deposition reactor, which includes a chemical vapor deposition chamber. A substrate holder located in the chemical vapor deposition chamber can be rotated about its own axis at a first angular speed, and a gas injection component located in the chemical vapor deposition chamber can be rotated about an axis of the gas injection component at a second angular speed. The angular speeds are independently selectable and can be configured to cause each point on a surface of a substrate wafer to travel in an epicyclical trajectory within a gas flow injected by the gas injection component. An angle between the substrate holder axis and the gas injection component axis and/or a distance between the substrate holder axis and the gas injection component axis can be controlled variables.

Abstract translation: 提供制造半导体的解决方案。 实施例提供了一种化学气相沉积反应器，其包括化学气相沉积室。 位于化学气相沉积室中的衬底保持器可以以其第一角速度围绕其自身的轴线旋转，并且位于化学气相沉积室中的气体注入组件可以围绕气体注入部件的轴线以第二角度 速度。 角速度是可独立选择的，并且可以被配置成使得衬底晶片的表面上的每个点在由气体注入部件注入的气流中的行星轨迹中行进。 衬底保持器轴线和气体注入部件轴线之间的角度和/或衬底保持器轴线和气体注入部件轴线之间的距离可以是受控变量。

公开(公告)号：US20150255672A1

公开(公告)日：2015-09-10

申请号：US14721082

申请日：2015-05-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Jinwei Yang

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  B82Y10/00 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/778 ,  H01L33/0025 ,  H01L33/32

Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

公开(公告)号：US08791450B2

公开(公告)日：2014-07-29

申请号：US13623381

申请日：2012-09-20

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Remigijus Gaska ,  Jinwei Yang

IPC: H01L33/26

CPC classification number: H01L33/06 ,  H01L33/025 ,  H01L33/04 ,  H01L33/14 ,  H01L33/325

Abstract: A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a percolated carbon atomic plane.

Abstract translation: 提供了碳掺杂短周期超晶格。 异质结构包括短周期超晶格，其包括与多个势垒交替的多个量子阱。 量子阱和/或势垒中的一个或多个包括一个过孔碳原子面。