公开(公告)号：JP2008258434A

公开(公告)日：2008-10-23

申请号：JP2007099549

申请日：2007-04-05

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SAKUMA HISASHI ,  SAKAI TADASHI ,  ONO TOMIO ,  SUZUKI MARIKO

IPC: H01L21/768 ,  H01L21/28 ,  H01L21/285 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide wiring capable of reducing resistance.
SOLUTION: The wiring 24 for electrically connecting a first conductive film 12 and a second conductive film 26 on the upper layer of the first conductive film 12 comprises a plurality of first metal particles 16 on the first conductive film 12, a plurality of conductive members 18 whose one end is connected to the surface of the first conductive film 12 through each of the plurality of first metal particles 16, a plurality of second metal particles 20 on the side face on the other end side of each of the plurality of conductive members 18, and a plurality of conductive members 22 connected to the surface of each of the plurality of conductive members 18 at one end through each of the plurality of second metal particles 20 and respectively connected to the second conductive film 26.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供能够降低电阻的布线。 ＆lt; P＆gt;解决方案：用于电连接第一导电膜12的上层上的第一导电膜12和第二导电膜26的布线24包括在第一导电膜12上的多个第一金属颗粒16， 导电构件18的一端通过多个第一金属颗粒16中的每一个连接到第一导电膜12的表面，多个第二金属颗粒20在多个第一金属颗粒16的另一端侧的侧面上 导电构件18和多个导电构件22，多个导电构件22的一端通过多个第二金属颗粒20中的每一个连接到多个导电构件18的表面，并分别连接到第二导电膜26。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008210756A

公开(公告)日：2008-09-11

申请号：JP2007049063

申请日：2007-02-28

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  SUZUKI MARIKO

IPC: H01J1/16 ,  H01J1/15 ,  H01J37/07

CPC classification number: H01J1/16

Abstract: PROBLEM TO BE SOLVED: To provide a thermal electron source in which heat radiation from a thermoionic cathode is reduced and an integration and an enlargement of an area are made possible to reduce a power consumption and moreover a rapid response after being conducted is made possible and a standby power is dispensed with to reduce a power consumption. SOLUTION: The thermal electron source includes a substrate 2 and a conductive thermoionic cathode 3 which is provided on the substrate 2 and has a plurality of fine holes 6 on its surface, and a radiation from the thermoionic cathode 3 is reduced and an integration and an enlargement of an area are made possible and a rapid response after being conducted is made possible to reduce a power consumption. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种热电子源，其中来自热电阴极的热辐射减少，并且使得区域的积分和扩大成为可能降低功耗，而且在进行后的快速响应是 成为可能，并且省略了待机功率以降低功耗。 解决方案：热电子源包括基板2和导电热分子阴极3，其设置在基板2上，并且在其表面上具有多个细孔6，并且来自热分离阴极3的辐射减小， 集成和扩大区域成为可能，并且在进行之后的快速响应成为可能以降低功耗。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2005243579A

公开(公告)日：2005-09-08

申请号：JP2004055308

申请日：2004-02-27

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  YOSHIDA HIROAKI ,  SUZUKI MARIKO

IPC: B09B3/00 ,  H01J9/50 ,  H01J61/06

CPC classification number: Y02W30/828

Abstract: PROBLEM TO BE SOLVED: To provide an electric discharge electrode and a discharge lamp using the electric discharge electrode improving efficiency and a service life while reducing the applied amount of rare metal and metallic materials whose load on global environment is being regarded as a problem. SOLUTION: The electric discharge electrode has a sealing tube 9 sealing electric discharge gas, a conductive base material 1 formed of a carbon-based material and passing through the sealing tube 9 from the outside of the sealing tube 9 to extend into the sealing tube 9, and a diamond crystal layer 5 formed on the surface of the conductive base material 1 located inside the sealing tube 9. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供一种放电电极和放电灯，其使用放电电极的提高效率和使用寿命，同时将减少对全球环境负荷的稀有金属和金属材料的使用量视为一种 问题。 解决方案：放电电极具有密封放电气体的密封管9，由碳基材料形成并从密封管9的外部穿过密封管9的导电基材1延伸到 密封管9和形成在位于密封管9内部的导电性基材1的表面上的金刚石晶体层5.权利要求（C）2005，JPO＆NCIPI

公开(公告)号：JP2005045463A

公开(公告)日：2005-02-17

申请号：JP2003202000

申请日：2003-07-25

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SUZUKI KAZUHIRO ,  FUNAKI HIDEYUKI ,  SHIGENAKA KEITARO ,  ONO TOMIO ,  SAKAI TADASHI ,  NARUSE YUJIRO ,  IIDA YOSHINORI ,  FUJIWARA IKUO

IPC: G01H9/00 ,  G02B5/18 ,  H04R23/00

Abstract: PROBLEM TO BE SOLVED: To provide a sound-to-electric transducer element of a simple small-area structure which has a wide dynamic range and is usable for various purposes.
SOLUTION: The sound-to-electric transducer element is equipped with a diaphragm 2 which is equipped with a diffraction grating and vibrates with sound pressure, a light source 1 which irradiates the diffraction grating with light, and an optical detector 3 which detects and converts the light diffracted by the diffraction grating into an electric signal. The optical detector 3 uses an image sensor such as a photodiode array. The optical detector 3 detects the diaphragm 2 being displaced in two dimensions by detecting not a difference in light intensity, but a two-dimensional image of a diffraction image. When the light emitted by the light source 1 is incident on the diaphragm 2, the light wave emitted by the light source 1 is reflected by the diaphragm 2 since the reflection diffraction grating is formed on the diaphragm 2 to form the diffraction image on the surface of the photodiode array 3. The optical detector 3 optically detects the diaphragm 2 with the reflection diffraction grating being displaced and further converts the displacement into the electric signal.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有宽动态范围并且可用于各种目的的简单小面积结构的声电传感器元件。 解决方案：声 - 电换能器元件配备有装备有衍射光栅并且具有声压振动的光阑2，用光照射衍射光栅的光源1和光学检测器3，光检测器3 检测并将由衍射光栅衍射的光转换成电信号。 光检测器3使用诸如光电二极管阵列的图像传感器。 光检测器3通过检测光强度的差异而不检测衍射图像的二维图像来检测膜片2的二维位移。 当由光源1发射的光入射到光阑2上时，光阑1发射的光被光阑2反射，因为在光阑2上形成反射衍射光栅，以在表面上形成衍射图像 光检测器3以反射衍射光栅位移光学地检测光阑2，并进一步将位移转换为电信号。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005044606A

公开(公告)日：2005-02-17

申请号：JP2003202518

申请日：2003-07-28

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  SUZUKI MARIKO ,  YOSHIDA HIROAKI

IPC: C30B29/04 ,  H01J1/05 ,  H01J1/15 ,  H01J9/04 ,  H01J31/15 ,  H01J61/06 ,  H01J61/067 ,  H01J61/073

CPC classification number: H01J9/042 ,  H01J1/15 ,  H01J61/0677 ,  H01J61/0737

Abstract: PROBLEM TO BE SOLVED: To provide a thermionic cathode in which sufficient conductivity is obtained from the starting time at room temperature, and which is capable of efficient heating and thermionic emission and has a long life.
SOLUTION: This cathode is provided with an encapsulated tube 9 in which discharge gas 11 is encapsulated, a fluorescent film 10 applied on the inner wall of the encapsulated tube 9, and a pair of discharge electrodes arranged at both ends of the encapsulated tube 9. The discharge electrodes are provided with insulating substrates 7a, and wide forbidden band semiconductor layers 1a on the insulating substrates 7a. Contact films 23a, 24a are formed on the surface of the wide forbidden band semiconductor layers 1a. Stem reeds 21a, 22a are connected to the wide forbidden band semiconductor layers 1a via the contact films 23a, 24a. The stem reeds 21a, 22a are respectively contacted to backsides of the insulating substrates 7a opposed to the contact films 23a, 24a, and pinch like a spring and retain from both sides a laminated structure composed of the insulating substrates 7a and the wide forbidden band semiconductor layers 1a.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供从室温起始时间获得足够的导电性并且能够有效地加热和热离子发射并具有长寿命的热离子阴极。 解决方案：该阴极设置有封装管9，其中封装有放电气体11，施加在封装管9的内壁上的荧光膜10和布置在封装的管的两端的一对放电电极 放电电极在绝缘基板7a上设置有绝缘基板7a和宽禁带半导体层1a。 接触膜23a，24a形成在宽禁带半导体层1a的表面上。 杆簧21a，22a经由接触膜23a，24a连接到宽禁带半导体层1a。 杆簧21a，22a分别接触与接触膜23a，24a相对的绝缘基板7a的背面，并且像弹簧一样夹紧，并且从两侧保持由绝缘基板7a和宽禁带半导体构成的层叠结构 层1a。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004111296A

公开(公告)日：2004-04-08

申请号：JP2002274365

申请日：2002-09-20

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  SUZUKI MARIKO

IPC: B81B3/00 ,  B81C1/00 ,  H01H1/02 ,  H01H1/025 ,  H01H1/027 ,  H01H1/10 ,  H01H59/00

CPC classification number: H01H59/0009 ,  H01H1/027 ,  H01H1/10 ,  H01H2001/0089

Abstract: PROBLEM TO BE SOLVED: To provide a microswitch which uses a diamond as a contact point and has a low ON-resistance and high reliability, and to provide a method for manufacturing it.
SOLUTION: Thin holes measuring about several tens of nm in diameter are formed in diamond thin films 19, 24 at intervals of the same order of the diameter, small metal electrodes 17a, 17b are embedded in the thin holes, and the respective distances for current passages from metal electrodes 25, 26 to the diamond thin films 19, 24 are made several tens of nm to reduce the ON-resistance by a large amount. This realizes the microswitch having a low ON-resistance and making use of high reliability inherent in a diamond.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003017967A

公开(公告)日：2003-01-17

申请号：JP2001197647

申请日：2001-06-29

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  CHO AKIMI

IPC: H03H3/08 ,  H03H9/145

Abstract: PROBLEM TO BE SOLVED: To provide a surface acoustic wave element with an excellent characteristic such as a broadband frequency characteristic by using a diamond for a propagation medium and to provide its manufacturing method.
SOLUTION: A LiNbO
3 single crystal substrate 12 with a greater electromechanical coupling coefficient to which hydrogen ions are impregnated is directly joined with a polycrystal diamond layer 11 formed on an Si (100) substrate 10 and a thin LiNbO
3 single crystal substrate layer 13 is formed by separating the substrate by heat treatment. The LiNbO
3 single crystal substrate layer 13 with the greater electromechanical coupling coefficient is used to be joined with the polycrystal diamond layer 11 at an optimum crystal azimuth to easily manufacture the surface acoustic wave element whose temperature coefficient is zero or close to zero.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：通过使用用于传播介质的金刚石来提供具有优异特性的表面声波元件，例如宽带频率特性，并提供其制造方法。 解决方案：具有氢离子浸渍的较大机电耦合系数的LiNbO 3单晶衬底12与形成在Si（100）衬底10上的多晶金刚石层11直接接合，薄的LiNbO 3单晶衬底层13由 通过热处理分离衬底。 使用具有较大机电耦合系数的LiNbO 3单晶衬底层13以最佳晶体方位与多晶金刚石层11接合，以容易地制造温度系数为零或接近于零的表面声波元件。

公开(公告)号：JP2002298777A

公开(公告)日：2002-10-11

申请号：JP2001097416

申请日：2001-03-29

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  CHO AKIMI

IPC: H01J1/30 ,  H01J61/067 ,  H01J61/16

Abstract: PROBLEM TO BE SOLVED: To provide a cold cathode discharge lamp exhibiting enhanced emission efficiency and long service life by a cold cathode having enhanced secondary electron emission efficiency and sputtering resistance. SOLUTION: The cold cathode discharge lamp exhibiting enhanced emission efficiency and long life can be achieved by using carbonaceous cold cathodes 19 and 20 constituted by a mixed phase of diamond and graphite. It is preferable to add an element having a main emission wavelength of 200 nm or less, such as Xe, into a discharge gas.

公开(公告)号：JP2001185714A

公开(公告)日：2001-07-06

申请号：JP36707499

申请日：1999-12-24

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  CHO TOSHI

IPC: H01L29/06 ,  H01J1/304 ,  H01L29/66

Abstract: PROBLEM TO BE SOLVED: To prevent the occurrence of the dielectric breakdown which is apt to occur between an emitter and a gate. SOLUTION: An electron emitting element comprises a structural substrate, an emitter which is formed on the substrate and has a sharp front end, and an insulating layer which is formed around the emitter in such a way that the front end of the emitter is exposed. The element also comprises a gate electrode which covers the insulating layer in such a way that the front end of the emitter is exposed. The opening of the gate is made smaller in size than the base section of the emitter and the distance from the emitter to the gate along the insulating layer is made longer than the linear distance from the emitter to the gate.

公开(公告)号：JP2000251615A

公开(公告)日：2000-09-14

申请号：JP4980299

申请日：1999-02-26

Applicant: TOSHIBA CORP

Inventor： SAKUMA HISASHI ,  SAKAI TADASHI ,  ONO TOMIO ,  CHO TOSHI

IPC: H01J1/304 ,  H01J9/02

Abstract: PROBLEM TO BE SOLVED: To provide a new vacuum micro element producing method and a structure thereof showing a highest characteristic obtained, when a diamond is used for an emitter. SOLUTION: A thermally oxidated film 104 serving as a gate insulation layer is formed at an Si substrate 101, having a recessed portion 102 whose bottom is made sharp, and a diamond layer being an emitter layer is formed only in a mold. The Si substrate 101 is connected to a glass substrate which is a second substrate, and the substrate 101 is removed by etching. A gate layer and a thermally oxidated film which is the gate layer are etched in order to expose a protruding portion of the diamond layer 103 being the emitter layer, and thereby a diamond emitter is formed.