公开(公告)号：EP2051138A1

公开(公告)日：2009-04-22

申请号：EP08450160.0

申请日：2008-10-17

Applicant: Austrian Research Centers Gmbh - Arc

Inventor： Pacher, Christoph ,  Finger, Norman

IPC: G02F1/39 ,  G06N1/00 ,  G02F1/355

CPC classification number: G02F1/395 ,  B82Y10/00 ,  G02F1/3558 ,  G02F2001/3548 ,  G02F2201/063 ,  G02F2201/18 ,  G02F2202/20 ,  G06N99/002 ,  H04L9/0858

Abstract: Einrichtung (10) zur Erzeugung von polarisationsverschränkten Photonen mittels parametrischer Abwärtskonvertierung mit einer Wellenleiterstruktur, die in einem Substrat aus optisch nichtlinearem Material mit periodisch gepolten Bereichen ausgebildet ist, und die zwei Wellenleiter (26, 27) aufweist, wobei im Betrieb dem einen Wellenleiter (26) über einen Strahlteiler (30) ein Anteil α der Pumpphotonen (p) und dem anderen Wellenleiter (27) der restliche Anteil (1- α) der Pumpphotonen (p) zuführbar ist, wobei die Pumpphotonen (p) im einen Wellenleiter (26) in vertikal polarisierte und im anderen Wellenleiter (27) in horizontal polarisierte Signal- (s) und Idlerphotonen (i) zerfallen, die über eine Vereinigungsstrecke (31) einer Vorrichtung (34) zur spektralen Trennung von Signal- und Idlerphotonen zugeführt werden; zumindest dem anderen Wellenleiter (27) ist ein thermisches (40) und/oder elektrooptisches Abstimmelement (28, 29) zur Feineinstellung der Wellenlängenverhältnisse bei der Abwärtskonvertierung zugeordnet; zumindest dem einen Wellenleiter (26) ist eine elektrooptische Einrichtung (29, 39) zur Justierung der relativen Phasenlage zwischen den horizontal und vertikal polarisierten Zuständen, die an der Trennvorrichtung (34) zugeordneten Ausgängen (35, 36) anliegen, zugeordnet.

Abstract translation: 装置（10）具有包括肋状扩散区波导（26,27）的波导结构（21）。 将金属电极（28）和另一个电极（29）分配给波导（27）以微调波长比。 下变频光学块（38）被分配给波导（26），用于调节水平和垂直极化状态之间的相对相位，其位于分配的波导输出（35,36）的波长滤波器（34）上。 波导通过钛或锌的扩散形成，并且该结构的衬底（20）由铌酸锂形成。

公开(公告)号：EP1779161A2

公开(公告)日：2007-05-02

申请号：EP05750940.8

申请日：2005-05-18

Applicant: Luxtera, Inc.

Inventor： GUNN, Lawrence, C., III ,  KOUMANS, Roger ,  LI, Bing ,  LI, Guo, Liang ,  PINGUET, Thierry, J.

IPC: G02B6/12

CPC classification number: G02F1/025 ,  G02B2006/12097 ,  G02B2006/12142 ,  G02F1/2257 ,  G02F2201/063

Abstract: High speed optical modulators (100) can be made of a reverse biased lateral PN diode (105) formed in a silicon rib optical waveguide (112) disposed on a SOI or other silicon based substrate (100). A PN junction is formed at the boundary of the P and N doped regions (120, 130) The depletion region at the PN junction (106) overlaps with the center of a guided optical mode propagating through the waveguide (110). Electrically modulating a reverse biased lateral PN diode (105) causes a phase shift in an optical wave propagating through the waveguide (110). Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

公开(公告)号：EP1584975A4

公开(公告)日：2006-09-06

申请号：EP03781005

申请日：2003-12-22

Applicant: MATSUSHITA ELECTRIC IND CO LTD ,  NGK INSULATORS LTD

Inventor： MIZUUCHI KIMINORI ,  YAMAMOTO KAZUHISA ,  IMAEDA MINORU ,  KAWAGUCHI TATSUO ,  YOSHINO TAKASHI

IPC: G02B6/12 ,  G02F1/355 ,  G02F1/365 ,  G02F1/377 ,  H01S3/06

CPC classification number: G02F1/3775 ,  G02F1/3558 ,  G02F1/365 ,  G02F2201/063

Abstract: An optical waveguide device comprises a waveguide layer for converting an incident light and emitting the converted light. The waveguide layer is provided with a ridge waveguide and slab waveguides formed on both sides of the ridge waveguide with recess portions intervening therebetween. The waveguide layer satisfies multimode conditions with respect to the incident light, and the light transmitted in the ridge waveguide is in single mode.

Abstract translation: 的光波导路装置（100）包括波导层（102）没有入射的光的波长转换并转换发光。 在波导层（102），脊波导（103）和板条形波导（105）被提供，该板条形波导（105）形成在所述脊形波导（103）与介于其间有凹部（104）的bothsides。 波导层（102）满足​​的多模条件为入射光，并且光穿过脊波导（103）中传播是在一个单一的模式。

公开(公告)号：EP1584975A1

公开(公告)日：2005-10-12

申请号：EP03781005.8

申请日：2003-12-22

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ,  NGK INSULATORS, LTD.

Inventor： MIZUUCHI, Kiminori ,  YAMAMOTO, Kazuhisa ,  IMAEDA, Minoru ,  KAWAGUCHI, Tatsuo ,  YOSHINO, Takashi

IPC: G02F1/377

CPC classification number: G02F1/3775 ,  G02F1/3558 ,  G02F1/365 ,  G02F2201/063

Abstract: An optical waveguide device (100) includes a waveguide layer (102) that converts a wavelength of incident light and emits converted light. In the waveguide layer (102), a ridge waveguide (103) and slab waveguides (105) are provided, the slab waveguides (105) being formed on both sides of the ridge waveguide (103) with recess portions (104) intervening therebetween. The waveguide layer (102) satisfied a multi mode condition for the incident light, and light propagating through the ridge waveguides (103) is in a single mode.

公开(公告)号：EP1362257A2

公开(公告)日：2003-11-19

申请号：EP02701414.1

申请日：2002-02-22

Applicant: Bookham Technology PLC

Inventor： VONSOVICI, Adrian Petru ,  DAY, Ian Edward

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2201/063 ,  G02F2202/06 ,  G02F2202/105

Abstract: An electro-optic device includes a semiconducting layer in which is formed a waveguide, a modulator formed across the waveguide comprising a p-doped region to one side and an n-doped region to the other side of the waveguide, wherein at least one of the doped regions extends from the base of a recess formed in the semiconducting layer. In this way, the doped regions can extend further into the semiconducting layer and further hinder escape of charge carriers without the need to increase the diffusion distance of the dopant and incur an additional thermal burden on the device. In an SOI device, the doped region can extend to the insulating layer. Ideally, both the p and n-doped regions extend from the base of a recess, but this may be unnecessary in some designs. Insulating layers can be used to ensure that dopant extends from the base of the recess only, giving a more clearly defined doped region. The (or each) recess can have non-vertical sides, such as are formed by v-groove etches, A combination of a vertical sidewall at the base of the recess and a non-vertical sidewall at the opening could be used.

公开(公告)号：EP1361683A1

公开(公告)日：2003-11-12

申请号：EP02290318.1

申请日：2002-02-08

Applicant: MOTOROLA, INC.

Inventor： Labbe, Patrick ,  Filoramo, Arianna ,  Toussaere, Eric ,  Zyss, Joseph

IPC: H04B10/12

CPC classification number: G02F2/002 ,  G02F1/3534 ,  G02F2201/063 ,  G02F2201/127 ,  G02F2202/022 ,  G02F2202/07 ,  H04B10/2575 ,  H04B10/66

Abstract: An optical to radio frequency detector comprising an optical guide (11 to 14) for receiving two optical signal components having frequencies that differ by an amount corresponding to a radio frequency, and a radio signal guide (15, 16) coupled with an interaction zone (14) of the optical guide for propagating a radio signal from the interaction zone at the radio frequency. The interaction zone (14) of the optical guide comprises an interaction material presenting a second-order non-linear optical polarisation characteristic to the propagation of the optical signal components, and the radio signal guide (15, 16) is in travelling-wave coupling with the interaction zone. The interaction material includes electrically orientated diazobenzene.
The radio signal guide (15, 16) comprises an electrically conductive strip (15) juxtaposed with and extending along the interaction zone (14) on one side thereof and an electrically conductive ground plane (16) juxtaposed with and extending along the interaction zone (14) on an opposite side thereof.

Abstract translation: 一种光到射频检测器，包括用于接收具有与射频相对应的频率不同的频率的两个光信号分量的光导（11至14）以及与交互区耦合的无线信号引导（15,16） 14），用于在射频上传播来自交互区的无线电信号。 光导体的相互作用区域（14）包括对光信号分量的传播呈现二阶非线性光学偏振特性的相互作用材料，无线电信号引导件（15,16）处于行波耦合中 与交互区。 相互作用材料包括电取向的重氮苯。 无线电信号引导器（15,16）包括一个导电条（15），该导电条（15）在其一侧上与相互作用区（14）并置并延伸，并且导电接地平面（16）并置并沿着其延伸 相互作用区域（14）。

公开(公告)号：EP0579166B1

公开(公告)日：1997-06-18

申请号：EP93111190.0

申请日：1993-07-13

Applicant: NIPPON TELEGRAPH AND TELEPHONE CORPORATION

Inventor： Shibata, Yasuo ,  Ikeda, Masahiro

IPC: G02F1/35 ,  G02B6/12

CPC classification number: G02F1/3521 ,  G02F2201/063 ,  G02F2201/066 ,  G02F2201/30 ,  G02F2202/10

公开(公告)号：EP0121401A3

公开(公告)日：1984-11-28

申请号：EP84302084

申请日：1984-03-28

Applicant: SUMITOMO ELECTRIC INDUSTRIES LIMITED

Inventor： Tada, Kunio ,  Nishiwaki, Yoshikazu c/o OSAKA WORKS ,  Matsuoka, Shunji c/o OSAKA WORKS

IPC: G02F01/015 ,  G02F01/31 ,  G02B05/14

CPC classification number: G02F1/025 ,  G02F1/3133 ,  G02F2001/0151 ,  G02F2201/063 ,  G02F2202/101

Abstract: A light modulation device comprises a substrate (1), a substrate layer (2), an optical waveguide layer (3) and buffer layers (4), in that order, formed of either all n-type or all p-type compound semiconductor crystal. In orderto capture the light in the optical waveguide layer, the composition ratio of the compound semiconductor is so determined that the refractive index is at least approximately 0.1% higher in the optical waveguide layers than in the substrate layer and in the buffer layers. Furthermore, the carrier density is low in the optical waveguide layer and in the buffer layers, so that the applied voltage is effectively applied mainly to the optical waveguide layer. Due to the construction of the light modulation device, strict control of the etching process is not required, the device has a low absorption loss of light, and it can be made as a monolithic optical integrated circuit.

公开(公告)号：KR1020170032393A

公开(公告)日：2017-03-22

申请号：KR1020177004079

申请日：2014-07-31

Applicant: 후아웨이 테크놀러지 컴퍼니 리미티드

Inventor： 리야밍 ,  청부원

IPC: G02F1/025 ,  H01L27/15

CPC classification number: G02F1/025 ,  G02F2001/0157 ,  G02F2201/063 ,  H01L27/15

Abstract: 실리콘기판(112) 및실리콘기판상에배치된산화막(114)을포함하는기판층(110), 산화막(114) 상에형성된최상층실리콘(120), 여기서도파층(112)이최상층실리콘상에형성되고, 제1 도핑패널(132) 및제2 도핑패널(133)을포함하는도핑층, 여기서제1 유형광 도핑영역(134)이제1 도핑패널(132) 상에형성되고, 제2 유형광 도핑영역(135)이제2 도핑패널(133) 상에형성되며, 제1 유형광 도핑영역(134), 도파층(122), 및제2 유형광 도핑영역(135)은 PIN 접합을형성하며, 도파층(122) 상에배치되고 PIN 접합에병렬로연결된변조층(140)을포함하는전계흡수모듈레이터(100)가제공된다. 특정파장의입사빔(beam)에대해, 변조전기신호가 PIN 접합에역으로인가되는때, 빔에대한변조층(140)의광 흡수계수는변조전기신호에따라변화하며, 빔이변조영역을통과한후, 빔에대해전계-광(electro-optic) 변조가구현될수 있도록, 빔의광 파워도대응하여변화한다.

Abstract translation: 在硅衬底112和基底层110，形成在包括114设置在硅衬底上的氧化膜的氧化膜114硅120的顶层，这里也引导层112的硅的顶部层上形成 第一掺杂面板132和第二掺杂面板133，其中第一类型轻掺杂区域134现在形成在第一掺杂面板132和第二类型轻掺杂区域132上 135）现在形成的第二掺杂面板133上，第一种类型的光掺杂区域134，波导层122，mitje第二类型光掺杂区域135形成PIN结，波导层（122 ）和与PIN结并联连接的调制层（140）。 对于具有特定波长，当施加回PIN结的调制电信号的入射光束（光束），用于射束的调制层140 uigwang吸收系数的变化取决于调制电信号，所述光束穿过调制区域 之后，光束的光功率也相应地改变，以便可以在光束上实施电光调制。

公开(公告)号：KR1020150013528A

公开(公告)日：2015-02-05

申请号：KR1020147031951

申请日：2013-04-16

Applicant: 인터내셔널 비지네스 머신즈 코포레이션

Inventor： 그린,윌리엄엠 ,  로젠버그,제시씨 ,  블라소프,유리에이

IPC: H01L21/761

CPC classification number: G02B6/1347 ,  G02B6/12 ,  G02B2006/12061 ,  G02F1/025 ,  G02F2201/063 ,  G02F2201/15 ,  G02F2202/06 ,  G02F2202/105

Abstract: 광 모듈레이터 디바이스 제조 방법은 기판 상에는 n-타입 층을, 상기 n-타입 층의 부분 상에는 제1 산화물 부분을, 상기 n-타입 층의 제2 부분 상에는 제2 산화물 부분을 형성하는 단계; 상기 제1 산화물 부분, 상기 n-타입 층의 평평한 표면의 부분들, 및 상기 제2 산화물 부분의 부분들 위에 제1 마스킹 층을 패턴하는 단계; 제1 p-타입 영역 및 제2 p-타입 영역을 형성하기 위하여 상기 n-타입 층 내에 p-타입 도펀트들을 임플란트하는 단계; 상기 제1 마스킹 층을 제거하는 단계; 상기 제1 산화물 부분, 상기 제1 p-타입 영역의 부분, 및 상기 n-타입 층의 부분 위에 제2 마스킹 층을 패턴하는 단계; 그리고 상기 n-타입 층의 노출된 부분들, 상기 제1 p-타입 영역의 노출된 부분들, 및 상기 n-타입 층의 영역들 그리고 상기 기판과 상기 제2 산화물 부분 사이에 배치된 상기 제2 p-타입 영역 내에 p-타입 도펀트들을 임플란트하는 단계를 포함한다.