公开(公告)号：US06342755B1

公开(公告)日：2002-01-29

申请号：US09373028

申请日：1999-08-11

Applicant: Benjamin E. Russ ,  Ichiro Saito ,  Jack Barger

Inventor： Benjamin E. Russ ,  Ichiro Saito ,  Jack Barger

IPC: H01J102

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30403

Abstract: Electrophoretic deposition provides an efficient process for manufacturing a field emission cathode. Particles of an electron emitting material mixed with particles of an insulating material are deposited by electrophoretic deposition on a conducting layer overlying an insulating layer to produce the cathode. By controlling the composition of the deposition bath and by mixing insulating particles with emitting particles, an electrophoretic deposition process can be used to efficiently produce field emission cathodes that provide spatially and temporally stable field emission. The deposition bath for the field emission cathode includes an alcohol, a charging salt, water, and a dispersant. The field emission cathodes can be used as an electron source in a field emission display device.

Abstract translation: 电泳沉积提供了制造场致发射阴极的有效方法。 通过电泳沉积在覆盖绝缘层的导电层上沉积与绝缘材料的颗粒混合的电子发射材料的颗粒，以产生阴极。 通过控制沉积浴的组成并通过将绝缘颗粒与发射颗粒混合，可以使用电泳沉积工艺来有效地产生提供空间和时间上稳定的场发射的场致发射阴极。 用于场致发射阴极的沉积浴包括醇，充电盐，水和分散剂。 场发射阴极可以用作场致发射显示装置中的电子源。

公开(公告)号：US20010044251A1

公开(公告)日：2001-11-22

申请号：US09860397

申请日：2001-05-17

Inventor： Young-Rae Cho ,  Jin-Ho Lee ,  Yoon-Ho Song ,  Seung-Youl Kang ,  Moon-Youn Jung ,  Kyoung-Ik Cho ,  Do-Hyung Kim ,  Chi-Sun Hwang

IPC: H01J009/02

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: A cathode structure for a field emission device, which is an essential component of a field emission device, and a method of fabricating the same are provided. An emitter material for electron emission constituting cathodes is formed in a particulate emitter, the particulate emitter is formed of a material from which electrons can be easily emitted at a low electric field. A significant advantage of the present invention over a conventional art is that the present invention patterns an emitter material to a cathode electrode using a photolithography process or a lift-off process. In the lift-off process, the emitting compound is patterned using a sacrifice layer. Also, in another embodiment of the present invention, there is disclosed a method of easily fabricating cathodes for a triode-type field emission device using a particulate emitter material at a low process temperature. Therefore, the present invention provides a method of fabricating a cathode for a triode-type field emission device using particulate emitter that is synthesized at a high temperature of 600null C. over, as the emitter material.

Abstract translation: 提供了场致发射器件的阴极结构及其制造方法。 用于形成阴极的电子发射用发射体材料形成在颗粒状发射体中，微粒发射体由电子能够以低电场容易地发射的材料形成。 本发明相对于传统技术的显着优点是本发明使用光刻工艺或剥离工艺将发射极材料图案化成阴极电极。 在剥离过程中，使用牺牲层对发光化合物进行图案化。 此外，在本发明的另一个实施例中，公开了一种在低工艺温度下使用颗粒发射体材料容易地制造用于三极管型场致发射器件的阴极的方法。 因此，本发明提供一种使用在600℃的高温下合成的粒子发射体作为发射极材料的三极管型场发射器件的阴极的制造方法。

公开(公告)号：US06284556B1

公开(公告)日：2001-09-04

申请号：US09308271

申请日：1999-07-08

Applicant: Wang Nang Wang ,  Neil Anthony Fox

Inventor： Wang Nang Wang ,  Neil Anthony Fox

IPC: H01L2100

CPC classification number: C23C16/27 ,  B24D18/00 ,  B82Y10/00 ,  C01B32/25 ,  C09K3/1409 ,  C23C16/278 ,  C23C16/44 ,  H01J1/304 ,  H01J9/025 ,  H01J31/123 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/3165

Abstract: A diamond grit surface is formed on a substrate (1) having a metal surface (2), such as nickel, by applying a paste (4) of low-grade diamond grit in a binder to the surface. After driving off the binder, the diamond coated surface is placed in a reactor chamber (10) having a microwave plasma reactor (11) and connected to a hydrogen gas pump (12). The substrate (1) is heated in the hydrogen atmosphere at a reduced pressure. The metal surface (2) acts as a catalyst in the presence of the hydrogen plasma to cause regrowth of the diamond (6), giving an improved size, shape and adhesion. The method may be used to make diamond surfaces in electron emitter devices, circuit boards or abrasive devices.

Abstract translation: 在具有金属表面（2）如镍的基板（1）上，通过将粘合剂中的低等级金刚石砂粒的浆料（4）施加到表面上，形成金刚石砂粒表面。 在驱除粘合剂之后，将金刚石涂覆的表面放置在具有微波等离子体反应器（11）并连接到氢气泵（12）的反应器室（10）中。 基板（1）在氢气氛中减压加热。 金属表面（2）在氢等离子体的存在下起催化剂的作用，引起金刚石（6）的再生长，从而改善了尺寸，形状和粘附性。 该方法可用于在电子发射器件，电路板或研磨器件中制造金刚石表面。

公开(公告)号：US6080325A

公开(公告)日：2000-06-27

申请号：US24877

申请日：1998-02-17

Applicant: David A. Cathey ,  Kevin Tjaden

Inventor： David A. Cathey ,  Kevin Tjaden

IPC: H01J9/02 ,  H01J9/00

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: A method for fabricating sharp asperities. A substrate is provided which has a mask layer disposed thereon, and a layer of micro-spheres is disposed superjacent the mask layer. The micro-spheres are for patterning the mask layer. Portions of the mask layer are selectively removed, thereby forming circular masks. The substrate is isotropically etched, thereby creating sharp asperities.

Abstract translation: 一种制造尖锐凹凸的方法。 提供了具有设置在其上的掩模层的基板，并且一层微球设置在掩模层的上方。 微球用于图案化掩模层。 选择性地去除掩模层的一部分，从而形成圆形掩模。 基板被各向同性地蚀刻，从而产生尖锐的凹凸。

公开(公告)号：US6057172A

公开(公告)日：2000-05-02

申请号：US157946

申请日：1998-09-22

Applicant: Yoshinori Tomihari

Inventor： Yoshinori Tomihari

IPC: H01J1/304 ,  H01J9/02 ,  H01L21/46 ,  H01L21/00

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: In a field-emission cathode, a silicon substrate is heated to cause oxygen present therein to form silicon oxide cores. The silicon oxide cores are used as a mask for forming emitters. Because the cores each has a diameter as small as about 0.1 .mu.m, the emitters can be density arranged. A method of producing such a field-emission cathode is also disclosed.

Abstract translation: 在场发射阴极中，加热硅衬底以引起存在于其中的氧以形成氧化硅芯。 氧化硅芯用作形成发射体的掩模。 因为核心的直径小至约0.1μm，所以发射器可以是密度排列的。 还公开了一种制造这种场致发射阴极的方法。

公开(公告)号：US6028391A

公开(公告)日：2000-02-22

申请号：US953407

申请日：1997-10-17

Applicant: Hideo Makishima

Inventor： Hideo Makishima

IPC: H01J1/304 ,  H01J1/30 ,  H01J3/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J31/127 ,  H01J2201/30403 ,  H01J2201/30426

Abstract: There is provided a field emission thin film cold cathode including a substrate, an electron-emission layer formed on the substrate and having a spherical surface or a curved surface approximated to a spherical surface recessed into the substrate, a first electrode disposed about the electron-emission layer and having a greater height from the substrate than the electron-emission layer, an electrically insulating layer formed on the first electrode, and a second electrode formed on the electrically insulating layer. The electron-emission layer may be made of monocrystalline diamond, polycrystalline diamond or amorphous diamond. The above-mentioned field emission thin film cold cathode provides an electron source which makes it no longer necessary to fabricate a micro-structured device, can be fabricated without a lithography apparatus having a high accuracy, and has a small current modulating voltage.

Abstract translation: 提供一种场致发射薄膜冷阴极，其包括基板，形成在基板上的电子发射层，具有近似于凹入基板的球面的球面或曲面;第一电极， 并且具有比所述电子发射层更高的与所述衬底的高度，形成在所述第一电极上的电绝缘层和形成在所述电绝缘层上的第二电极。 电子发射层可以由单晶金刚石，多晶金刚石或非晶金刚石制成。 上述场发射薄膜冷阴极提供了不再需要制造微结构器件的电子源，可以在没有高精度的光刻设备的情况下制造，并且具有小的电流调制电压。

公开(公告)号：US5977697A

公开(公告)日：1999-11-02

申请号：US6347

申请日：1998-01-13

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC: H01J31/12 ,  H01J1/304 ,  H01J9/02 ,  H01J23/06 ,  H01J29/04 ,  H01J1/30

CPC classification number: H01J23/06 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J61/0677 ,  H01J61/0737

Abstract: Improved diamond particle emitters, useful for flat panel displays, are fabricated by suspending nanometer-sized ultra-fine particles in a solution, applying the suspension as a coating onto a conducting substrate such as n-type Si or metal, subjecting the coated substrate to a plasma of hydrogen, and applying a thin, conformal diamond overcoating layer onto the particles. The resulting emitters show excellent emission properties, such as extremely low turn-on voltage, good uniformity and high current densities. In particular, the electron emitters are capable of producing electron emission current densities of at least 0.1 mA/,mm.sup.2 at extremely low vacuum electric fields of 0.2-3.0 V/.mu.m V/.mu.m. These field values are about an order of magnitude lower than exhibited by the best defective CVD diamond and almost two orders of magnitude lower than p-type semiconducting diamond. It is further found that the emission characteristics remain the same even after the plasma treated diamond surface is exposed to air for several months.

Abstract translation: 用于平板显示器的改进的金刚石颗粒发射器通过将纳米尺寸的超细颗粒悬浮在溶液中来制造，将悬浮液作为涂层施涂到诸如n型Si或金属的导电基材上，使经涂覆的基材 氢的等离子体，并将薄的保形金刚石外涂层施加到颗粒上。 所得到的发射体显示出优异的发射特性，例如极低的导通电压，良好的均匀性和高的电流密度。 特别地，电子发射体在0.2-3.0V / m V /μm的极低真空电场下能够产生至少0.1mA / mm2的电子发射电流密度。 这些场值比由最好的有缺陷的CVD金刚石显示的低一个数量级，比p型半导体金刚石低两个数量级。 进一步发现即使在等离子体处理的金刚石表面暴露于空气几个月之后，发射特性也保持不变。

公开(公告)号：US5813892A

公开(公告)日：1998-09-29

申请号：US678565

申请日：1996-07-12

Applicant: Christopher J. Spindt ,  John M. Macaulay

Inventor： Christopher J. Spindt ,  John M. Macaulay

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A gated electron-emitter is fabricated according to the process in which charged particles are directed towards a track-susceptible layer (48) to form charged-particle tracks (50B.sub.1) through the track-susceptible layer. Apertures (52.sub.1) are formed through the track-susceptible layer by etching along the charged-particle tracks. A gate layer (46) is etched through the apertures to form gate openings (54.sub.1) through the gate layer. An insulating layer (24) is etched through the gate openings to form dielectric open spaces (56.sub.1, 94.sub.1, 106.sub.1, or 114.sub.1) through the insulating layer down to a resistive layer (22B) of an underlying conductive region (22). Electron-emissive elements (30B, 30/88D.sub.1, 98/102.sub.1, or 118.sub.1) are formed in the dielectric open spaces over the resistive layer.

Abstract translation: 根据其中带电粒子指向轨道敏感层（48）以通过轨道敏感层形成带电粒子轨迹（50B1）的工艺制造门控电子发射器。 通过沿着带电粒子轨迹的蚀刻，通过轨道敏感层形成孔径（521）。 通过孔径蚀刻栅极层（46），以形成通过栅极层的栅极开口（541）。 通过栅极开口蚀刻绝缘层（24），以形成通过绝缘层的下行导电区域（22）的电阻层（22B）的电介质开放空间（561,941,1061或1141）。 在电阻层上的电介质开放空间中形成电子发射元件（30B，30 / 88D1,98 / 1011或1181）。

公开(公告)号：US5753130A

公开(公告)日：1998-05-19

申请号：US665620

申请日：1996-06-18

Applicant: David A. Cathey ,  Kevin Tjaden

Inventor： David A. Cathey ,  Kevin Tjaden

IPC: H01J9/02 ,  H01J9/00

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: A method for fabricating sharp asperities. A substrate is provided which has a mask layer disposed thereon, and a layer of micro-spheres is disposed superjacent the mask layer. The micro-spheres are for patterning the mask layer. Portions of the mask layer are selectively removed, thereby forming circular masks. The substrate is isotropically etched, thereby creating sharp asperities.

Abstract translation: 一种制造尖锐凹凸的方法。 提供了具有设置在其上的掩模层的基板，并且在该掩模层的上方布置一层微球。 微球用于图案化掩模层。 选择性地去除掩模层的一部分，从而形成圆形掩模。 基板被各向同性地蚀刻，从而产生尖锐的凹凸。

公开(公告)号：US5744195A

公开(公告)日：1998-04-28

申请号：US752234

申请日：1996-11-19

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Lawrence Seibles ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Lawrence Seibles ,  Wei Zhu

IPC: C30B29/04 ,  C30B30/02 ,  C30B31/20 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/205 ,  C23C16/26 ,  B05D3/06

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm.sup.-1 broadened by a full width at half maximum .DELTA.K in the range 5-15 cm.sup.-1 (and preferably 7-11 cm.sup.-1). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm.sup.2 or more at a low applied field of 25 V/.mu.m or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 .mu.m in diameter at fields of 15 V/.mu.m or less.

Abstract translation: 申请人已经发现了用于制造，处理和使用金刚石的方法，其大大增强了它们的低电压发射能力。 具体来说，申请人已经发现，生长或处理以增加缺陷浓度的富含缺陷的钻石 - 金刚石具有增强的低电压发射性能。 富含缺陷的金刚石的特征在于在1332cm-1处的金刚石峰，在5-15cm -1（优选7-11cm -1）的范围内以最大DELTA K的全宽度加宽的拉曼光谱。 这样的富含缺陷的金刚石可以在25V /μm以下的低施加电场下发射0.1mA / mm 2以上的电子密度。 特别有利的结构在15V /μm或更小的场中使用直径小于10μm的岛或颗粒阵列中的这种金刚石。