Abstract:
A high-voltage power supply for an electron-beam gun with a heatable cathode and an anode and of the type having an electronic switch connected in the current circuit for the cathode and controllable for blocking the current to the cathode, includes an impulse protecting filter connected in the current circuit for the cathode. The filter comprises a capacitor connected in parallel to the cathode, a choke connected in series with the cathode current circuit, a blocking diode and a discharge resistor connected in series therewith, with the diode and resistor connected in parallel with the choke.
Abstract:
The diameter of an electron beam at a crossover point can be set to a predetermined value by adjusting a heater current through a heater of an electron gun and a voltage between an emitter of the electron gun and wehnelt electrode. The diameter of the electron beam incident onto an object to be exposed can be varied by varying the diameter of the electron beam at the crossover point. This can be done without adjusting an electron beam lens and deflection electrode of an electron beam exposing apparatus. The diameter of the electron beam incident onto an object to be exposed can be set to a predetermined value dependent upon a pattern to be described.
Abstract:
An electron beam unit for heat treatment by the electron bombardment technique wherein the resistor for limiting the discharge current arising in the vacuum chamber between the cathode and the accelerating electrode of the electron beam gun is connected between the positive pole of the power supply and the accelerating electrode, the accelerating electrode being insulated from the material being processed by means of an insulator.
Abstract:
An electron gun comprising a changeover chamber and changeover circuit between the gun chamber and the insulated cable which connects the power supply circuits to the electrodes which enables adjustment of electrode potentials to accomplish electrode treatment without excessive gun currents.
Abstract:
An arrangement for regulating the operating parameters of an electron beam generator in which the main cathode is indirectly heated by a directly-heated auxiliary cathode. A regulating circuit connected to the auxiliary cathode has three individual regulators connected in tandem for regulating the auxiliary cathode. Three separate signals corresponding to the accelerating voltage of the auxiliary cathode, the emission current of the auxiliary cathode, and the emission current of the main cathode are applied respectively to the inputs of the three individual regulators in feedback arrangement.
Abstract:
An arrangement for regulating the operating parameters of an electron beam generator in which the main cathode is indirectly heated by a directly-heated auxiliary cathode. A regulating circuit connected to the auxiliary cathode has three individual regulators connected in tandem for regulating the auxiliary cathode. Three separate signals corresponding to the heating current of the auxiliary cathode, the emission current of the auxiliary cathode, and the emission current of the main cathode are applied respectively to the inputs of the three individual regulators in feedback arrangement.
Abstract:
A power supply of an electron beam unit has switching components and comprises means which enables the power supply to operate both as a current source and as a voltage source, said means being in the form of at least one reactive component connected in the circuit of the power supply by at least one of its switching components.
Abstract:
The characteristic deterioration of device can be prevented by removing charges using corona of the substrate surface after the substrate processing process using plasma. Provided is the manufacturing method of the semiconductor device. A step is for loading a substrate within the chamber. A step is for performing the substrate by generating the plasma within the chamber. A step is for generating the corona within the chamber. The photosensitive film removing formed in the substrate surface, or the substrate is washed, or the process of injecting the ion into substrate is performed.