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公开(公告)号：US3078151A
公开(公告)日：1963-02-19
申请号：US84236459
申请日：1959-09-25
Applicant: SIEMENS AG
Inventor： RUDOLF KAPPELMEYER
CPC classification number: C30B15/24 , C30B15/10 , Y10S117/90 , Y10S148/107 , Y10T117/1036 , Y10T117/1052
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公开(公告)号：US3030194A
公开(公告)日：1962-04-17
申请号：US40961054
申请日：1954-02-11
Applicant: SIEMENS AG
Inventor： REIMER EMEIS
CPC classification number: C30B13/28 , C30B13/16 , C30B13/26 , C30B13/32 , C30B15/002 , C30B15/02 , C30B15/30 , Y10S117/901 , Y10S117/91 , Y10S117/917 , Y10T117/1036 , Y10T117/1076
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公开(公告)号：US2927008A
公开(公告)日：1960-03-01
申请号：US61889956
申请日：1956-10-29
Applicant: SHOCKLEY TRANSISTOR CORP
Inventor： WILLIAM SHOCKLEY
CPC classification number: C30B15/08 , C30B15/02 , C30B15/14 , C30B15/22 , Y10S117/91 , Y10T117/1036 , Y10T117/1068
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公开(公告)号：EP1922437A4
公开(公告)日：2014-10-29
申请号：EP06733126
申请日：2006-05-10
Applicant: ELKEM SOLAR AS
Inventor： FRIESTAD KENNETH
IPC: C30B11/00 , C01B20060101 , C30B29/06
CPC classification number: C30B29/06 , C30B11/003 , Y10T117/10 , Y10T117/1024 , Y10T117/1032 , Y10T117/1036 , Y10T117/1044 , Y10T117/1068 , Y10T117/1072 , Y10T117/108 , Y10T117/1088
Abstract: A method for the directional solidification of silicon or other materials. A cooled plate is lowered into a silicon melt and an ingot of solid silicon is solidified downwards.
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公开(公告)号：EP1623202A4
公开(公告)日：2007-04-18
申请号：EP04722504
申请日：2004-03-22
Applicant: CORNELL RES FOUNDATION INC
Inventor： THORNE ROBERT E , STUM ZACHARY , O'NEILL KEVIN , KMETKO JAN
CPC classification number: C30B29/58 , C30B35/00 , G01N23/20 , G01N23/20025 , Y10S269/90 , Y10S269/908 , Y10S269/909 , Y10T29/53961 , Y10T117/1036
Abstract: Sample mounts (10) for mounting microcrystals of biological macromolecules for X-ray crystallography are prepared by using patterned thin polyimide films (12) that have curvature imparted thereto, for example, by being attached to a curved outer surface of a small metal rod (16). The patterned film (12) preferably includes a tapered tip end (24) for holding a crystal. Preferably, a small sample aperture is disposed in the film for reception of the crystal. A second, larger aperture can also be provided that is connected to the sample aperture by a drainage channel, allowing removal of excess liquid and easier manipulation in viscous solutions. The curvature imparted to the film (12) increases the film's rigidity and allows a convenient scoop-like action for retrieving crystals. The polyimide contributes minimally to background and absorption, and can be treated to obtain desired hydrophobicity or hydrophilicity.
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Patent Agency Ranking
公开(公告)号：EP1372805A2
公开(公告)日：2004-01-02
申请号：EP01998076.2
申请日：2001-12-20
Applicant: RWE Schott Solar Inc.
Inventor： MACKINTOSH, Brian, H. , OUELLETTE, Marc
IPC: B01D1/00
CPC classification number: C30B29/06 , C30B15/20 , C30B15/34 , Y10T117/10 , Y10T117/1036 , Y10T117/104 , Y10T117/1056 , Y10T117/1068
Abstract: An improved mechanical arrangement controls the introduction of silicon particles into an EFG (Edge-defined Film-fed Growth) crucible/die unit (20A) for melt replenishment during a crystal growth run. A feeder unit (124) injects silicon particles upwardly through a center hub (114) of the crucible/die unit (20A) and the mechanical arrangement intercepts the injected particles and directs them so that they drop into the melt in a selected region of the crucible and at a velocity which reduces splashing, whereby to reduce the likelihood of interruption of the growth process due to formation of solid mass of silicon on the center hub (114) and adjoining components. The invention also comprises use of a Faraday ring (300) to alter the ratio of the electrical currents flowing through primary (296) and secondary (298) induction heating coils that heat the crucible die unit (20A) and the mechanical arrangement.
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公开(公告)号：EP0805501A4
公开(公告)日：1998-09-23
申请号：EP96925134
申请日：1996-07-30
Applicant: UNION MATERIAL INC
Inventor： SAKURAGI SHIRO
CPC classification number: C30B29/06 , C30B11/00 , C30B11/007 , C30B29/08 , C30B29/46 , C30B29/60 , F25B21/02 , F25D11/00 , H01L35/32 , H01L35/34 , H01L2924/0002 , Y10T117/1036 , H01L2924/00
Abstract: A shaper (2) is arranged within a shaping vessel (1). A raw material for a crystal is inserted into the shaping vessel (1) and a crystal melt (5) is formed by setting it in a predetermined atmosphere and heating it. A mechanical force F1 is applied to the crystal melt (5), which is present on the upper surface of the shaper (2), by a pressuring member (4) from above. The crystal melt (5) has nowhere to escape but a gap (3) formed by the shaper( 2), so it is injected into that gap (3) as shown by the arrow. This method of fabricating a shaped crystal is suitable for fabricating a monocrystal or multicrystal semiconductor from a material such as silicon, germanium, or bismuth telluride.
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公开(公告)号：EP0608213A1
公开(公告)日：1994-08-03
申请号：EP91916079.0
申请日：1991-07-09
Applicant: SAPHIKON, INC.
Inventor： LOCHER, John, W. , MADSEN, Joseph, E.
IPC: C30B15
CPC classification number: C30B15/34 , C30B15/00 , C30B29/20 , C30B29/60 , Y10T117/1036 , Y10T117/104
Abstract: A single crystal dome is formed from a surface of revolution and grown from a liquid material on a linear die surface wettable by the molten material. A seed crystal is supported in a position spaced from an axis of revolution which lies in the plane of the wettable surface, and the seed crystal is rotated around the axis of revolution to generate a curved surface having a predetermined radius of curvature. The seed crystal is supported in a predetermined orientation of one of its axes with respect to the wetted surface of commencement of growth.
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公开(公告)号：EP0217158A3
公开(公告)日：1988-11-09
申请号：EP86112146
申请日：1986-09-02
Inventor： Stock, Horst, Dipl.-Phys. , Huber, Lothar , Priewasser, Georg
CPC classification number: C30B29/605 , C30B11/002 , C30B15/08 , Y10S117/90 , Y10S117/91 , Y10T117/1008 , Y10T117/1036 , Y10T117/1044 , Y10T117/1056 , Y10T117/1068
Abstract: Es wird ein Verfahren zur Herstellung von Siliciumstäben mit einer Kolumnarstruktur aus einkristallinen Kristall bezirken mit kristallographischer Vorzugsorientierung an gegeben. Aus einem Siliciumreservoir wird schmelzflüssiges Silicium in eine Kristallisationskammer überführt, welche durch in Form des gewünschten Stabquerschnittes fugen dicht angeordnete Rollen gebildet wird. Dort bildet das Sil icium zunächst eine stabile Außenschale aus erstarrtem Mat erial aus und wird, während es weiter durchkristallisiert, nach unten abgezogen und von den Rollen freigegeben. Wegen des kurzen Kontaktes mit einer Gefäßwandung wird ein be sonders verunreinigungsarmer Siliciumstab erhalten.
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公开(公告)号：EP0217158A2
公开(公告)日：1987-04-08
申请号：EP86112146.5
申请日：1986-09-02
Inventor： Stock, Horst, Dipl.-Phys. , Huber, Lothar , Priewasser, Georg
CPC classification number: C30B29/605 , C30B11/002 , C30B15/08 , Y10S117/90 , Y10S117/91 , Y10T117/1008 , Y10T117/1036 , Y10T117/1044 , Y10T117/1056 , Y10T117/1068
Abstract: Es wird ein Verfahren zur Herstellung von Siliciumstäben mit einer Kolumnarstruktur aus einkristallinen Kristallbezirken mit kristallographischer Vorzugsorientierung angegeben. Aus einem Siliciumreservoir wird schmelzflüssiges Silicium in eine Kristallisationskammer überführt, welche durch in Form des gewünschten Stabquerschnittes fugendicht angeordnete Rollen gebildet wird. Dort bildet das Silicium zunächst eine stabile Außenschale aus erstarrtem Material aus und wird, während es weiter durchkristallisiert, nach unten abgezogen und von den Rollen freigegeben. Wegen des kurzen Kontaktes mit einer Gefäßwandung wird ein besonders verunreinigungsarmer Siliciumstab ernalten.
Abstract translation: 提供了一种用于生产具有与给定的结晶优选取向单晶晶体区的柱状结构的硅棒的过程。 从硅贮存熔融硅转移到由在布置在期望的横截面杆接头密封辊的形式形成的结晶室。 在那里，第一硅形成固化的材料的稳定的外壳和，因为它继续通过结晶的下方拉出，并从卷轴松开。 因为与血管壁的短接触的获得特别低的杂质硅棒。
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