公开(公告)号：WO2007143056A3

公开(公告)日：2007-12-13

申请号：PCT/US2007/012875

申请日：2007-05-31

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  KANDEL, Daniel ,  LEVINSKI, Vladimir ,  ADEL, Michael, E. ,  SELIGSON, Joel, L.

Inventor： KANDEL, Daniel ,  LEVINSKI, Vladimir ,  ADEL, Michael, E. ,  SELIGSON, Joel, L.

IPC: G01N21/00 ,  G01B11/30

Abstract: Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.

公开(公告)号：WO2007109103A2

公开(公告)日：2007-09-27

申请号：PCT/US2007/006569

申请日：2007-03-15

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  ADEL, Michael, E. ,  ROBINSON, John ,  IZIKSON, Pavel ,  EICHELBERGER, Brad ,  WIDMANN, Amir ,  KATO, Atsuhiko

Inventor： ADEL, Michael, E. ,  ROBINSON, John ,  IZIKSON, Pavel ,  EICHELBERGER, Brad ,  WIDMANN, Amir ,  KATO, Atsuhiko

IPC: G01J1/00

CPC classification number: G03F7/70458 ,  G03F7/70525 ,  G03F7/706 ,  G03F9/7046

Abstract: A method for optimizing alignment performance in a fleet of exposure systems involves characterizing each exposure system in a fleet of exposure systems to generate a set of distinctive distortion profiles associated with each exposure system. The set of distinctive distortion profiles are stored in a database. A wafer having reference pattern formed thereon is provided for further pattern fabrication and an exposure system is selected from the fleet to fabricate a next layer on the wafer. Linear and higher order parameters of the selected exposure system are adjusted using the distinctive distortion profiles to model the distortion of the reference pattern. Once the exposure system is adjusted, it is used to form a lithographic pattern on the wafer.

Abstract translation: 用于优化曝光系统队列中的对准性能的方法涉及表征曝光系统中的每个曝光系统，以产生与每个曝光系统相关联的一组独特的失真曲线。 一组有特色的失真简档存储在数据库中。 提供具有形成在其上的参考图案的晶片用于进一步的图案制造，并且从车队中选择曝光系统以在晶片上制造下一层。 使用不同的失真曲线来调整所选曝光系统的线性和高阶参数以对参考图案的失真进行建模。 一旦调整曝光系统，就用于在晶片上形成平版印刷图案。

公开(公告)号：WO2007053376A2

公开(公告)日：2007-05-10

申请号：PCT/US2006041514

申请日：2006-10-23

Applicant: KLA TENCOR TECH CORP ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  FROMMER AVIV ,  KANDEL DANIEL

Inventor： LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  FROMMER AVIV ,  KANDEL DANIEL

IPC: H01L23/58 ,  H01L21/66

CPC classification number: H01L23/544 ,  G03F7/70633 ,  H01L22/12 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction. A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction. A target structure and a method for generating a calibration curve are also described.

Abstract translation: 用于制造包括几个目标结构的半导体管芯的方法和装置。 形成第一层，其包括在第一方向上延伸的一个或多个线或沟槽结构。 形成第二层，其包括在垂直于第一结构的第二方向上延伸的一个或多个线或沟槽结构，使得目标结构沿着第一方向的突起独立于第二方向和投影 沿着第二方向的目标结构与第一方向无关。 还描述了用于产生校准曲线的目标结构和方法。

公开(公告)号：WO2005079498A3

公开(公告)日：2006-08-03

申请号：PCT/US2005005253

申请日：2005-02-17

Applicant: KLA TENCOR TECH CORP ,  ADEL MICHAEL E ,  SELIGSON JOEL L ,  KANDEL DANIEL

Inventor： ADEL MICHAEL E ,  SELIGSON JOEL L ,  KANDEL DANIEL

IPC: G01B11/00 ,  G03F7/00 ,  G03F7/20 ,  H01L21/66 ,  H01L21/76 ,  H01L23/544

CPC classification number: G03F7/70683 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/70633 ,  H01L22/12

Abstract: The present invention relates to overlay marks and methods for determining overlay error. One aspect of the present invention relates to a continuously varying offset mark. The continuously varying offset mark is a single mark that includes over laid periodic structures, which have offsets that vary as a function of position. By way of example, the periodic structures may correspond to gratings with different values of a grating characteristic such as pitch. Another aspect of the present invention relates to methods for determining overlay error from the continuously varying offset mark. The method generally includes determining the center of symmetry of the continuously varying offset mark and comparing it to the geometric center of the mark. If there is zero overlay, the center of symmetry tends to coincide with the geometric center of the mark. If overlay is non zero (e.g., misalignment between two layers), the center of symmetry is displaced from the geometric center of the mark. The displacement in conjunction with the preset gain of the continuously varying offset mark is used to calculate the overlay error.

Abstract translation: 本发明涉及用于确定覆盖误差的覆盖标记和方法。 本发明的一个方面涉及连续变化的偏移标记。 连续变化的偏移标记是单个标记，其包括覆盖周期性结构，其具有作为位置的函数而变化的偏移。 作为示例，周期性结构可以对应于具有诸如间距的光栅特性的不同值的光栅。 本发明的另一方面涉及用于从连续变化的偏移标记确定覆盖误差的方法。 该方法通常包括确定连续变化的偏移标记的对称中心并将其与标记的几何中心进行比较。 如果零覆盖，则对称中心倾向于与标记的几何中心一致。 如果覆盖层不为零（例如，两层之间的未对准），则对称中心从标记的几何中心位移。 结合连续变化的偏移标记的预设增益的位移用于计算重叠误差。

公开(公告)号：WO2010080732A3

公开(公告)日：2010-10-07

申请号：PCT/US2010020046

申请日：2010-01-04

Applicant: KLA TENCOR CORP ,  ADEL MICHAEL E ,  MANASSEN AMNON ,  KANDEL DANIEL

Inventor： ADEL MICHAEL E ,  MANASSEN AMNON ,  KANDEL DANIEL

IPC: H01L21/66

CPC classification number: G03F7/70683 ,  G03F7/705 ,  G03F7/70633 ,  H01L22/12

Abstract: A metrology target design may be optimized using inputs including metrology target design information, substrate information, process information, and metrology system information. Acquisition of a metrology signal with a metrology system may be modeled using the inputs to generate one or more optical characteristics of the metrology target. A metrology algorithm may be applied to the characteristics to determine a predicted accuracy and precision of measurements of the metrology target made by the metrology system. Part of the information relating to the metrology target design may be modified and the signal modeling and metrology algorithm may be repeated to optimize the accuracy and precision of the one or more measurements. The metrology target design may be displayed or stored after the accuracy and precision are optimized.

Abstract translation: 度量目标设计可以使用包括度量衡目标设计信息，衬底信息，过程信息和度量衡系统信息的输入来优化。 采用计量系统采集计量信号可以使用输入来建模以产生计量目标的一个或多个光学特性。 计量算法可以应用于特征以确定由计量系统制造的计量目标的测量的预测精度和精度。 与计量目标设计有关的部分信息可能会被修改，信号建模和计量算法可能会重复，以优化一个或多个测量的准确度和精确度。 计量目标设计可以在精确度和精度得到优化之后显示或存储。

公开(公告)号：WO2010011560A2

公开(公告)日：2010-01-28

申请号：PCT/US2009050834

申请日：2009-07-16

Applicant: KLA TENCOR CORP ,  ADEL MICHAEL E ,  POSLAVSKY LEONID ,  FIELDEN JOHN ,  MADSEN JONATHAN MICHAEL ,  PETERS ROBERT

Inventor： ADEL MICHAEL E ,  POSLAVSKY LEONID ,  FIELDEN JOHN ,  MADSEN JONATHAN MICHAEL ,  PETERS ROBERT

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Metrology may be implemented during semiconductor device fabrication by a) modeling a first measurement on a first test cell formed in a layer of a partially fabricated device; b) performing a second measurement on a second test cell in the layer; c) feeding information from the second measurement into the modeling of the first measurement; and after a lithography pattern has been formed on the layer including the first and second test cells, d) modeling a third and a fourth measurement on the first and second test cells respectively using information from a) and b) respectively.

Abstract translation: 可以在半导体器件制造期间通过以下步骤来实现计量：a）对形成在部分制造的器件的层中的第一测试单元上的第一测量进行建模; b）对所述层中的第二测试单元执行第二测量; c）将第二测量中的信息馈送到第一测量的建模中; 并且在包括第一和第二测试单元的层上形成光刻图案之后，d）分别使用来自a）和b）的信息对第一和第二测试单元上的第三和第四测量进行建模。

公开(公告)号：WO2009143200A2

公开(公告)日：2009-11-26

申请号：PCT/US2009/044594

申请日：2009-05-20

Applicant: KLA-TENCOR CORPORATION ,  IZIKSON, Pavel ,  ADEL, Michael, E. ,  KANDEL, Daniel

Inventor： IZIKSON, Pavel ,  ADEL, Michael, E. ,  KANDEL, Daniel

IPC: H01L21/66

CPC classification number: G03F7/70641 ,  G05B19/41845 ,  G05B2219/32187 ,  G05B2219/36307 ,  H01L22/20 ,  Y02P90/16 ,  Y02P90/22

Abstract: A method of characterizing a process by selecting the process to characterize, selecting a parameter of the process to characterize, determining values of the parameter to use in a test matrix, specifying an eccentricity for the test matrix, selecting test structures to be created in cells on a substrate, processing the substrate through the process using in each cell the value of the parameter as determined by the eccentric test matrix, measuring a property of the test structures in the cells, and developing a correlation between the parameter and the property.

Abstract translation: 一种通过选择表征过程来表征过程的方法，选择过程的参数来表征，确定在测试矩阵中使用的参数的值，指定测试矩阵的偏心度，选择要在单元格中创建的测试结构 在基板上，通过在每个单元中使用由偏心测试矩阵确定的参数值来处理基板，测量单元中的测试结构的性质，以及发展参数与特性之间的相关性。

公开(公告)号：WO2007109103A3

公开(公告)日：2008-09-25

申请号：PCT/US2007006569

申请日：2007-03-15

Applicant: KLA TENCOR TECH CORP ,  ADEL MICHAEL E ,  ROBINSON JOHN ,  IZIKSON PAVEL ,  EICHELBERGER BRAD ,  WIDMANN AMIR ,  KATO ATSUHIKO

Inventor： ADEL MICHAEL E ,  ROBINSON JOHN ,  IZIKSON PAVEL ,  EICHELBERGER BRAD ,  WIDMANN AMIR ,  KATO ATSUHIKO

IPC: H01J37/153

CPC classification number: G03F7/70458 ,  G03F7/70525 ,  G03F7/706 ,  G03F9/7046

Abstract: A method for optimizing alignment performance in a fleet of exposure systems involves characterizing each exposure system in a fle of exposure systems to generate a set of distinctive distortion profiles (301) associated with each exposure system The set of distinct distortion profiles are stored in a database (303) A wafer having reference pattern formed thereon is provided for further pattern fabpcation (305) and an exposure system is selected from the fleet to fabricate a next layer on the wafer (307) Linear and higher ord parameters of the selected exposure system are adjusted using the distinctive distortion profiles to model the distortion of the referen pattern (309) Once the exposure system is adjusted, it is used to form a lithographic pattern on the wafer (311).

Abstract translation: 用于优化曝光系统队列中的对准性能的方法涉及表征一系列曝光系统中的每个曝光系统，以产生与每个曝光系统相关联的一组不同的失真曲线（301）。将一组不同的失真曲线存储在数据库中 （303）提供具有形成在其上的参考图案的晶片用于进一步的图案制作（305），并且从车队中选择曝光系统以制造晶片上的下一层（307）所选曝光系统的线性和更高的ord参数 使用独特的失真曲线来调整参考图案的失真（309）。一旦曝光系统被调整，就用于在晶片（311）上形成平版印刷图案。

公开(公告)号：WO2007143056A2

公开(公告)日：2007-12-13

申请号：PCT/US2007012875

申请日：2007-05-31

Applicant: KLA TENCOR TECH CORP ,  KANDEL DANIEL ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  SELIGSON JOEL L

Inventor： KANDEL DANIEL ,  LEVINSKI VLADIMIR ,  ADEL MICHAEL E ,  SELIGSON JOEL L

IPC: G01B11/00

CPC classification number: G03F7/70633

Abstract: Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.

Abstract translation: 公开了用于测量半导体靶的特性（例如覆盖）的装置和方法。 通常，在使用度量系统从目标物收集图像的同时执行顺序选择的成像和/或照明。 在一个实现中，仅在系统的成像路径中提供可调谐空间调制。 在其他实施方式中，在系统的照明和成像路径中提供可调谐的空间调制。 在具体实现中，可调谐空间调制用于以衍射级±n对并行光栅进行成像。 并排光栅可以在不同的层或相同的半导体晶片层中。 通常通过测量光栅的中心对称性之间的距离来发现结构之间的覆盖。 在本实施例中，对于给定的n（其中n是整数且不等于零）的选择，仅选择±n，并且光栅仅以这些衍射级成像。

公开(公告)号：WO2007109103A9

公开(公告)日：2007-11-22

申请号：PCT/US2007006569

申请日：2007-03-15

Applicant: KLA TENCOR TECH CORP ,  ADEL MICHAEL E ,  ROBINSON JOHN ,  IZIKSON PAVEL ,  EICHELBERGER BRAD ,  WIDMANN AMIR ,  KATO ATSUHIKO

Inventor： ADEL MICHAEL E ,  ROBINSON JOHN ,  IZIKSON PAVEL ,  EICHELBERGER BRAD ,  WIDMANN AMIR ,  KATO ATSUHIKO

IPC: G01J1/00

CPC classification number: G03F7/70458 ,  G03F7/70525 ,  G03F7/706 ,  G03F9/7046

Abstract: A method for optimizing alignment performance in a fleet of exposure systems involves characterizing each exposure system in a fleet of exposure systems to generate a set of distinctive distortion profiles associated with each exposure system. The set of distinctive distortion profiles are stored in a database. A wafer having reference pattern formed thereon is provided for further pattern fabrication and an exposure system is selected from the fleet to fabricate a next layer on the wafer. Linear and higher order parameters of the selected exposure system are adjusted using the distinctive distortion profiles to model the distortion of the reference pattern. Once the exposure system is adjusted, it is used to form a lithographic pattern on the wafer.

Abstract translation: 一种用于优化曝光系统的队列中的对准性能的方法涉及表征曝光系统中的每个曝光系统，以产生与每个曝光系统相关联的一组不同的畸变分布。 这组独特的失真配置文件存储在数据库中。 提供其上形成有参考图案的晶片用于进一步的图案制造，并且从该团队中选择曝光系统以制造晶片上的下一层。 所选曝光系统的线性和高阶参数使用独特的失真轮廓进行调整，以模拟参考图案的失真。 一旦曝光系统被调整，它就被用来在晶圆上形成光刻图案。