公开(公告)号：WO2005020265A2

公开(公告)日：2005-03-03

申请号：PCT/US2004/027189

申请日：2004-08-20

Applicant: VEECO INSTRUMENTS, INC. ,  BURTNER, David, Matthew ,  SIEGFRIED, Daniel, E. ,  BLACKER, Richard ,  ALEXEYEV, Valery ,  KEEM, John ,  ZELENKOV, Vsevolod ,  KRIVORUCHKO, Mark

Inventor： BURTNER, David, Matthew ,  SIEGFRIED, Daniel, E. ,  BLACKER, Richard ,  ALEXEYEV, Valery ,  KEEM, John ,  ZELENKOV, Vsevolod ,  KRIVORUCHKO, Mark

IPC: H01J

CPC classification number: H01J1/00

Abstract: Shielding associated with an ion source, such as an anode layer source, reduces the amount and/or concentration of sputtered contaminants impinging and remaining on the surface of a target substrate. While passing the ion beam through to the target substrate, shielding can reduce the total amount of sputtered contaminants impinging the substrate before, during, and/or after passage of the substrate through the envelope of the etching beam. Particularly, a shield configuration that blocks the contaminants from impinging the substrate after the substrate passes through the etching beam (i.e., outside of the envelope of the etching beam) yields a higher quality substrate with reduced substrate contamination.

Abstract translation: 与离子源（例如阳极层源）相关联的屏蔽减少了撞击并残留在目标衬底表面上的溅射污染物的量和/或浓度。 当将离子束通过目标衬底时，屏蔽可以减少在衬底通过蚀刻光束的外壳之前，之中和/或之后撞击衬底的溅射污染物的总量。 特别地，在衬底通过蚀刻光束（即，蚀刻光束的外壳之外）阻挡污染物撞击衬底的屏蔽结构产生具有降低的衬底污染的较高质量的衬底。

公开(公告)号：WO2005020265A3

公开(公告)日：2006-04-20

申请号：PCT/US2004027189

申请日：2004-08-20

Applicant: VEECO INSTR INC ,  BURTNER DAVID MATTHEW ,  SIEGFRIED DANIEL E ,  BLACKER RICHARD ,  ALEXEYEV VALERY ,  KEEM JOHN ,  ZELENKOV VSEVOLOD ,  KRIVORUCHKO MARK

Inventor： BURTNER DAVID MATTHEW ,  SIEGFRIED DANIEL E ,  BLACKER RICHARD ,  ALEXEYEV VALERY ,  KEEM JOHN ,  ZELENKOV VSEVOLOD ,  KRIVORUCHKO MARK

IPC: H01J20060101 ,  G21K5/10

CPC classification number: H01J1/00

Abstract: Shielding (108) associated with an ion source (102), such as an anode layer source, reduces the amount and/or concentration of sputtered contaminants impinging and remaining on the surface of a target substrate (110). While passing the ion beam through to the target substrate (110), shielding (108) can reduce the total amount of sputtered contaminants impinging the substrate (110) before, during, and/or after passage of the substrate (110) through the envelope of the etching beam. Particularly, a shield configuration (108) that blocks the contaminants from impinging the substrate (110) after the substrate (100) passes through the etching beam (i.e., outside of the envelope of the etching beam) yields a higher quality substrate (110) with reduced substrate (110) contamination.

Abstract translation: 与诸如阳极层源的离子源（102）相关联的屏蔽（108）减少了撞击并保留在目标衬底（110）的表面上的溅射污染物的量和/或浓度。 当通过离子束通过目标衬底（110）时，屏蔽（108）可以减少在衬底（110）穿过信封之前，期间和/或之后撞击衬底（110）的溅射污染物的总量 的蚀刻光束。 特别地，在衬底（100）通过蚀刻光束（即，蚀刻光束的外壳之外）阻挡污染物撞击衬底（110）的屏蔽配置（108）产生更高质量的衬底（110） 具有减少的基底（110）污染。

公开(公告)号：WO2005010911A3

公开(公告)日：2005-02-03

申请号：PCT/US2004/023890

申请日：2004-07-22

Applicant: VEECO INSTRUMENTS, INC. ,  SIEGFRIED, Daniel, E. ,  BURTNER, David, Matthew ,  TOWNSEND, Scott, A. ,  KEEM, John ,  KRIVORUSCHKO, Mark ,  ALEXEYEV, Valery ,  ZELENKOV, Vsevolod

Inventor： SIEGFRIED, Daniel, E. ,  BURTNER, David, Matthew ,  TOWNSEND, Scott, A. ,  KEEM, John ,  KRIVORUSCHKO, Mark ,  ALEXEYEV, Valery ,  ZELENKOV, Vsevolod

IPC: H01J7/24

Abstract: An ion source design and manufacturing techniques allows longitudinal cathode expansion along the length of the anode layer source (ALS) (300). Cathode covers (304) are used to secure the cathode plates (302) to the source body assembly (308) of an ion source. The cathode covers (304) allow the cathode plate (302) to expand along the longitudinal axis of the ion source, thereby relieving the stress introduced by differential thermal expansion. In addition, the cathode cover (304) configuration allows for less expensive cathode plates (302), including modular cathode plates. Such plates can be adjusted relative to the cathode-cathode gap to prolong the life of a given cathode plate and maintain source performance requirements. A cathode plate (302) in a linear section of an ion source has symmetrical edges and can, therefore, be flipped over to exchange the first (worn) cathode edge with the second (unworn) cathode edge.

公开(公告)号：WO2005010911A2

公开(公告)日：2005-02-03

申请号：PCT/US2004023890

申请日：2004-07-22

Applicant: VEECO INSTR INC ,  SIEGFRIED DANIEL E ,  BURTNER DAVID MATTHEW ,  TOWNSEND SCOTT A ,  KEEM JOHN ,  KRIVORUSCHKO MARK ,  ALEXEYEV VALERY ,  ZELENKOV VSEVOLOD

Inventor： SIEGFRIED DANIEL E ,  BURTNER DAVID MATTHEW ,  TOWNSEND SCOTT A ,  KEEM JOHN ,  KRIVORUSCHKO MARK ,  ALEXEYEV VALERY ,  ZELENKOV VSEVOLOD

IPC: H01J20060101 ,  H01J7/24 ,  H01J27/00 ,  H01J

CPC classification number: H01J27/143

Abstract: An ion source design and manufacturing techniques allows longitudinal cathode expansion along the length of the anode layer source (ALS). Cathode covers are used to secure the cathode plates to the source body assembly of an ion source. The cathode covers allow the cathode plate to expand along the longitudinal axis of the ion source, thereby relieving the stress introduced by differential thermal expansion. In addition, the cathode cover configuration allows for less expensive cathode plates, including modular cathode plates. Such plates can be adjusted relative to the cathode-cathode gap to prolong the life of a given cathode plate and maintain source performance requirements. A cathode plate in a linear section of an ion source has symmetrical edges and can, therefore, be flipped over to exchange the first (worn) cathode edge with the second (unworn) cathode edge.

Abstract translation: 离子源设计和制造技术允许纵向阴极沿阳极层源（ALS）的长度膨胀。 阴极盖用于将阴极板固定到离子源的源体组件。 阴极盖允许阴极板沿着离子源的纵向轴线膨胀，从而减轻由差动热膨胀引入的应力。 此外，阴极盖构造允许较便宜的阴极板，包括模块化阴极板。 这样的板可以相对于阴极 - 阴极间隙进行调节，以延长给定阴极板的使用寿命并保持源性能要求。 离子源的线性部分中的阴极板具有对称的边缘，因此可以翻转以与第二（未损坏的）阴极边缘交换第一（磨损）的阴极边缘。