公开(公告)号：EP2248153A4

公开(公告)日：2012-01-18

申请号：EP09709805

申请日：2009-02-11

Applicant: SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING ,  ADVANCED TECH MATERIALS

Inventor： SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

IPC: H01L21/265 ,  C23C16/44 ,  C23G5/00 ,  H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J37/317

CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C14/54 ,  C23C14/564 ,  H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J2237/082 ,  H01J2237/22

公开(公告)号：EP2248153A2

公开(公告)日：2010-11-10

申请号：EP09709805.7

申请日：2009-02-11

Applicant: Sweeney, Joseph D. ,  Yedave, Sharad N. ,  Byl, Oleg ,  Kaim, Robert ,  Eldridge, David ,  Sergi, Steven ,  Feng, Lin ,  Bishop, Steven E. ,  Olander, Karl W. ,  Tang, Ying ,  Advanced Technology Materials, Inc.

Inventor： SWEENEY, Joseph, D. ,  YEDAVE, Sharad, N. ,  BYL, Oleg ,  KAIM, Robert ,  ELDRIDGE, David ,  SERGI, Steven ,  FENG, Lin ,  BISHOP, Steven, E. ,  OLANDER, Karl, W. ,  TANG, Ying

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C14/54 ,  C23C14/564 ,  H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J2237/082 ,  H01J2237/22

Abstract: Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.

公开(公告)号：SG188150A1

公开(公告)日：2013-03-28

申请号：SG2013010889

申请日：2009-02-11

Applicant: ADVANCED TECH MATERIALS ,  SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

Inventor： SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

Abstract: ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMSCleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.[ No Suitable Figure ]

公开(公告)号：WO2007127865A3

公开(公告)日：2008-12-11

申请号：PCT/US2007067542

申请日：2007-04-26

Applicant: ADVANCED TECH MATERIALS ,  DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

Inventor： DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

IPC: C25F1/00 ,  C25F3/12

CPC classification number: C23C14/564 ,  C23C16/4405 ,  H01J37/32412 ,  H01J37/32862

Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.

Abstract translation: 一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。 为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。 当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。 当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。 使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F， ，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。

公开(公告)号：WO2006047410A8

公开(公告)日：2006-07-27

申请号：PCT/US2005038173

申请日：2005-10-24

Applicant: ADVANCED TECH MATERIALS ,  DIETZ JAMES ,  BISHOP STEVEN E ,  MCMANUS JAMES V ,  LURCOTT STEVEN M ,  WODJENSKI MICHAEL J ,  KAIM ROBERT ,  DIMEO FRANK JR

Inventor： DIETZ JAMES ,  BISHOP STEVEN E ,  MCMANUS JAMES V ,  LURCOTT STEVEN M ,  WODJENSKI MICHAEL J ,  KAIM ROBERT ,  DIMEO FRANK JR

IPC: H01L21/66 ,  B67D7/06 ,  B67D99/00

CPC classification number: G01N33/00 ,  F17C11/00 ,  G01F15/063 ,  G01F22/02 ,  G01F23/0076 ,  G01M3/32 ,  G01M3/3236 ,  G06Q10/087 ,  G06Q30/04 ,  G06Q50/04 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L22/10 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L25/03 ,  H01L25/0652 ,  H01L25/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24011 ,  H01L2224/2518 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/19042 ,  H05K1/185 ,  H05K3/4602 ,  H05K2203/0165 ,  H05K2203/085 ,  H05K2203/1469 ,  Y02P90/30 ,  Y10T29/4913 ,  Y10T29/49133 ,  Y10T29/49165 ,  Y10T29/53183 ,  H01L2224/45099

Abstract: A monitoring system (100) for monitoring fluid in a fluid supply vessel (22, 24, 26, 28, 108) during operation including dispensing of fluid from the fluid supply vessel. The monitoring system includes (i) one or more sensors (114, 126) for monitoring a characteristic of the fluid supply vessel or the fluid dispensed therefrom, (ii) a data acquisition module (40, 132, 146) operatively coupled to the one or more sensors to receive monitoring data therefrom and responsively generate an output correlative to the characteristic monitored by the one or more sensors, and (iii) a processor (50, 150) and display (52, 150) operatively coupled with the data acquisition module and arranged to process the output from the data acquisition module and responsively output a graphical representation of fluid in the fluid supply vessel, billing documents, usage reports, and/or resupply requests.

Abstract translation: 一种用于在操作期间监测流体供应容器（22,24,26,28,108）中的流体的监测系统（100），包括从所述流体供应容器分配流体。 监测系统包括（i）用于监测流体供应容器或从其分配的流体的特性的一个或多个传感器（114,126），（ii）可操作地耦合到一个的数据采集模块（40,132,146） 或多个传感器以从其接收监测数据并且响应地产生与由所述一个或多个传感器监测的特性相关的输出，以及（iii）处理器（50,150）和显示器（52,150），其与所述数据采集模块 并且被布置成处理来自数据采集模块的输出并且响应地输出流体供应容器中的流体的图形表示，计费凭证，使用报告和/或再供应请求。

公开(公告)号：WO2006047373A2

公开(公告)日：2006-05-04

申请号：PCT/US2005/038102

申请日：2005-10-21

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  DIMEO, Frank, Jr. ,  DIETZ, James ,  OLANDER, W., Karl ,  KAIM, Robert ,  BISHOP, Steven, E. ,  NEUNER, Jeffrey, w. ,  ARNO, Jose, I.

Inventor： DIMEO, Frank, Jr. ,  DIETZ, James ,  OLANDER, W., Karl ,  KAIM, Robert ,  BISHOP, Steven, E. ,  NEUNER, Jeffrey, w. ,  ARNO, Jose, I.

IPC: B08B6/00 ,  B08B9/00

CPC classification number: C23G5/00 ,  C23C14/564 ,  H01J37/08 ,  H01J37/32862 ,  H01J2237/022 ,  H01J2237/31701

Abstract: A method and apparatus for cleaning residue from components of the vacuum chamber and beaming of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region of the vacuum chamber.

Abstract translation: 一种用于清洁真空室的部件的残留物和用于制造微电子器件的离子注入机的抛光的方法和装置。 为了有效地除去残留物，将组分与气相反应性卤化物组合物接触足够的时间并在足够的条件下至少部分地除去残余物。 选择气相反应性卤化物组合物与残留物选择性反应，而不与真空室的离子源区域的组分反应。

公开(公告)号：WO2006047410A3

公开(公告)日：2006-05-04

申请号：PCT/US2005/038173

申请日：2005-10-24

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  DIETZ, James ,  BISHOP, Steven, E. ,  MCMANUS, James, V. ,  LURCOTT, Steven, M. ,  WODJENSKI, Michael, J. ,  KAIM, Robert ,  DIMEO, Frank, Jr.

Inventor： DIETZ, James ,  BISHOP, Steven, E. ,  MCMANUS, James, V. ,  LURCOTT, Steven, M. ,  WODJENSKI, Michael, J. ,  KAIM, Robert ,  DIMEO, Frank, Jr.

IPC: H01L21/44 ,  H01L21/31 ,  C23C16/30

Abstract: A monitoring system (100) for monitoring fluid in a fluid supply vessel (22, 24, 26, 28, 108) during operation including dispensing of fluid from the fluid supply vessel. The monitoring system includes (i) one or more sensors (114, 126) for monitoring a characteristic of the fluid supply vessel or the fluid dispensed therefrom, (ii) a data acquisition module (40, 132, 146) operatively coupled to the one or more sensors to receive monitoring data therefrom and responsively generate an output correlative to the characteristic monitored by the one or more sensors, and (iii) a processor (50, 150) and display (52, 150) operatively coupled with the data acquisition module and arranged to process the output from the data acquisition module and responsively output a graphical representation of fluid in the fluid supply vessel, billing documents, usage reports, and/or resupply requests.

公开(公告)号：WO2006047373A8

公开(公告)日：2006-08-10

申请号：PCT/US2005038102

申请日：2005-10-21

Applicant: ADVANCED TECH MATERIALS ,  DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I

Inventor： DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I

IPC: B08B6/00 ,  B08B9/00

CPC classification number: C23G5/00 ,  C23C14/564 ,  H01J37/08 ,  H01J37/32862 ,  H01J2237/022 ,  H01J2237/31701

Abstract: A method and apparatus for cleaning residue from components of the vacuum chamber and beamline of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region of the vacuum chamber.

Abstract translation: 一种清洁残余物的方法和装置，用于制造微电子器件中使用的离子注入机的真空室和束线组件。 为了有效地除去残留物，将组分与气相反应性卤化物组合物接触足够的时间并在足够的条件下至少部分地除去残余物。 选择气相反应性卤化物组合物与残留物选择性反应，而不与真空室的离子源区域的组分反应。

公开(公告)号：WO2010093380A1

公开(公告)日：2010-08-19

申请号：PCT/US2009/053520

申请日：2009-08-12

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  SWEENEY, Joseph, D. ,  YEDAVE, Sharad, N. ,  BYL, Oleg ,  KAIM, Robert ,  ELDRIDGE, David ,  FENG, Lin ,  BISHOP, Steven, E. ,  OLANDER, W., Karl ,  TANG, Ying

Inventor： SWEENEY, Joseph, D. ,  YEDAVE, Sharad, N. ,  BYL, Oleg ,  KAIM, Robert ,  ELDRIDGE, David ,  FENG, Lin ,  BISHOP, Steven, E. ,  OLANDER, W., Karl ,  TANG, Ying

IPC: H01L21/265

CPC classification number: H01J37/08 ,  C23C14/48 ,  C23C14/54 ,  C23C14/564 ,  H01J27/08 ,  H01J37/16 ,  H01J37/18 ,  H01J37/3171 ,  H01J37/32862 ,  H01J2237/0209 ,  H01J2237/022 ,  H01J2237/082 ,  H01J2237/22

Abstract: Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.

Abstract translation: 使用温度和/或反应性清洗剂清洁离子注入系统或其组件，使得能够通过监测阴极偏置功率并根据比较值采取校正动作来增加/蚀刻用于离子注入系统的间接加热的阴极中的阴极 以蚀刻或再生阴极。

公开(公告)号：WO2009102762A3

公开(公告)日：2009-11-12

申请号：PCT/US2009033754

申请日：2009-02-11

Applicant: SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

Inventor： SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C14/54 ,  C23C14/564 ,  H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J2237/082 ,  H01J2237/22

Abstract: Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.

Abstract translation: 使用能够在电弧室的离子源中生长/蚀刻细丝的反应性清洁剂来清洁离子注入系统或其组分，通过适当地控制电弧室中的温度以实现所需的长丝生长或替代的细丝蚀刻 。 还描述了使用诸如XeFx，WFx，AsFx，PFx和TaFx的反应性气体，其中x具有化学计量学上适当的值或值范围，用于清除离子注入器或植入物的组分的原位或非原生境 清洁布置，在环境温度，升高的温度或等离子体条件下。 在特定的反应性清洁剂中，BrF3被描述为用于在原位或非原位清洁装置中清洁离子注入系统或其组分。 还描述了一种清洁离子注入系统的前沿以从所述前线至少部分去除电离相关沉积物的方法，包括使所述前沿与清洁气体接触，其中所述清洁气体与所述沉积物化学反应。 还描述了改进离子注入系统的性能和延长寿命的方法，包括使阴极与气体混合物接触。