公开(公告)号：SG188150A1

公开(公告)日：2013-03-28

申请号：SG2013010889

申请日：2009-02-11

Applicant: ADVANCED TECH MATERIALS ,  SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

Inventor： SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

Abstract: ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMSCleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.[ No Suitable Figure ]

公开(公告)号：EP1423480A4

公开(公告)日：2008-06-11

申请号：EP01952383

申请日：2001-06-29

Applicant: UNIV ARKANSAS ,  VALENITE INC ,  MALSHE AJAY P ,  YEDAVE SHARAD N ,  BROWN WILLIAM D ,  RUSSELL WILLIAM C

Inventor： MALSHE AJAY P ,  YEDAVE SHARAD N ,  BROWN WILLIAM D ,  RUSSELL WILLIAM C ,  BHAT DEEPAK G

IPC: B05D3/10 ,  B32B18/00 ,  C04B35/56 ,  C04B35/563 ,  C04B35/58 ,  C04B35/583 ,  C04B35/5831 ,  C09C1/68 ,  C23C12/02 ,  C23C16/04 ,  C23C28/04 ,  C23C30/00 ,  B05D5/00 ,  B24D3/02 ,  B32B9/00 ,  B32B19/00 ,  C23C8/00 ,  C23C16/00

CPC classification number: C04B35/5831 ,  C04B35/5626 ,  C04B35/58014 ,  C04B2235/3839 ,  C04B2235/3843 ,  C04B2235/386 ,  C04B2235/3886 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C23C12/02 ,  C23C16/045 ,  C23C30/005 ,  Y10S427/10

Abstract: A composition including a first phase selected from nitrides, carbides, carbonitrides, borides, sulphides, chalcogenides, oxides, and silicides, and a second phase selected from nitrides, carbides, carbonitrides, borides, sulphides, chalcogenides, oxides, and silicides, wherein said second phase comprises a multiplicity of discrete portions positioned into the first phase, with these multiplicity of portions comprising a continuous second phase, and made thereof, coatings and articles, especially, machining, cutting and shaping tools, wearparts, and methods of making and using the composition, coating and articles.

公开(公告)号：EP1423480A1

公开(公告)日：2004-06-02

申请号：EP01952383.6

申请日：2001-06-29

Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS ,  VALENITE INC. ,  Malshe, Ajay P. ,  Yedave, Sharad N. ,  Brown, William D. ,  Russell, William C.

Inventor： MALSHE, Ajay, P. ,  YEDAVE, Sharad N. ,  BROWN, William, D. ,  RUSSELL, William, C. ,  BHAT, Deepak, G.

IPC: C09C1/68 ,  C23C8/00 ,  C23C16/00 ,  B05D5/00 ,  B24D3/02 ,  B32B9/00 ,  B32B19/00

CPC classification number: C04B35/5831 ,  C04B35/5626 ,  C04B35/58014 ,  C04B2235/3839 ,  C04B2235/3843 ,  C04B2235/386 ,  C04B2235/3886 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C23C12/02 ,  C23C16/045 ,  C23C30/005 ,  Y10S427/10

Abstract: A composition including a first phase selected from nitrides, carbides, carbonitrides, borides, sulphides, chalcogenides, oxides, and silicides, and a second phase selected from nitrides, carbides, carbonitrides, borides, sulphides, chalcogenides, oxides, and silicides, wherein said second phase comprises a multiplicity of discrete portions positioned into the first phase, with these multiplicity of portions comprising a continuous second phase, and made thereof, coatings and articles, especially, machining, cutting and shaping tools, wearparts, and methods of making and using the composition, coating and articles.

公开(公告)号：EP1423480B1

公开(公告)日：2014-08-13

申请号：EP01952383.6

申请日：2001-06-29

Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS ,  VALENITE INC. ,  Malshe, Ajay P. ,  Yedave, Sharad N. ,  Brown, William D. ,  Russell, William C. ,  Bhat, Deepak G.

Inventor： MALSHE, Ajay, P. ,  YEDAVE, Sharad N. ,  BROWN, William, D. ,  RUSSELL, William, C. ,  BHAT, Deepak, G.

IPC: C09C1/68 ,  C23C8/00 ,  C23C16/00 ,  B05D5/00 ,  B24D3/02 ,  B32B9/00 ,  B32B19/00

CPC classification number: C04B35/5831 ,  C04B35/5626 ,  C04B35/58014 ,  C04B2235/3839 ,  C04B2235/3843 ,  C04B2235/386 ,  C04B2235/3886 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C23C12/02 ,  C23C16/045 ,  C23C30/005 ,  Y10S427/10

公开(公告)号：EP2248153A4

公开(公告)日：2012-01-18

申请号：EP09709805

申请日：2009-02-11

Applicant: SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING ,  ADVANCED TECH MATERIALS

Inventor： SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

IPC: H01L21/265 ,  C23C16/44 ,  C23G5/00 ,  H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J37/317

CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C14/54 ,  C23C14/564 ,  H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J2237/082 ,  H01J2237/22

公开(公告)号：EP2248153A2

公开(公告)日：2010-11-10

申请号：EP09709805.7

申请日：2009-02-11

Applicant: Sweeney, Joseph D. ,  Yedave, Sharad N. ,  Byl, Oleg ,  Kaim, Robert ,  Eldridge, David ,  Sergi, Steven ,  Feng, Lin ,  Bishop, Steven E. ,  Olander, Karl W. ,  Tang, Ying ,  Advanced Technology Materials, Inc.

Inventor： SWEENEY, Joseph, D. ,  YEDAVE, Sharad, N. ,  BYL, Oleg ,  KAIM, Robert ,  ELDRIDGE, David ,  SERGI, Steven ,  FENG, Lin ,  BISHOP, Steven, E. ,  OLANDER, Karl, W. ,  TANG, Ying

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C14/54 ,  C23C14/564 ,  H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J2237/082 ,  H01J2237/22

Abstract: Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.

公开(公告)号：WO2012024310A3

公开(公告)日：2012-05-31

申请号：PCT/US2011047942

申请日：2011-08-16

Applicant: ADVANCED TECH MATERIALS ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  YEDAVE SHARAD N ,  JONES EDWARD E ,  ZOU PENG ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  RAY RICHARD S

Inventor： KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  YEDAVE SHARAD N ,  JONES EDWARD E ,  ZOU PENG ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  RAY RICHARD S

IPC: C01B35/06 ,  C01B9/08

CPC classification number: C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract translation: 一种同位素富集的含硼化合物，其包含两个或更多个硼原子和至少一个氟原子，其中至少一个硼原子含有浓度或比率大于天然丰度浓度或其比率的所需硼同位素 。 该化合物可以具有B2F4的化学式。 描述了这些化合物的合成方法，以及使用这些化合物的离子注入方法，以及储存和分配容器，其中富含同位素的含硼化合物有利地包含在随后的分配用途中。

公开(公告)号：WO2009102762A2

公开(公告)日：2009-08-20

申请号：PCT/US2009/033754

申请日：2009-02-11

Applicant: SWEENEY, Joseph, D. ,  YEDAVE, Sharad, N. ,  BYL, Oleg ,  KAIM, Robert ,  ELDRIDGE, David ,  SERGI, Steven ,  FENG, Lin ,  BISHOP, Steven, E. ,  OLANDER, Karl, W. ,  TANG, Ying

Inventor： SWEENEY, Joseph, D. ,  YEDAVE, Sharad, N. ,  BYL, Oleg ,  KAIM, Robert ,  ELDRIDGE, David ,  SERGI, Steven ,  FENG, Lin ,  BISHOP, Steven, E. ,  OLANDER, Karl, W. ,  TANG, Ying

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C14/54 ,  C23C14/564 ,  H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J2237/082 ,  H01J2237/22

Abstract: Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.

Abstract translation: 通过适当地控制电弧室中的温度，利用能够在电弧室的离子源中生长/蚀刻长丝的反应清洁试剂来清洁离子注入系统或其组件， 期望的长丝生长或替代长丝蚀刻。 还描述了使用活性气体，例如XeFx，WFx，AsFx，PFx和TaFx，其中x具有化学计量适当的值或数值范围，用于在离子注入机或注入机的部件的原位或异位清洁区域 清洁布置，在环境温度，升高的温度或等离子体条件下。 在特定的反应性清洁剂中，BrF3被描述为可用于清洁离子注入系统或其部件，在原位或非原位清洁装置中。 还描述了一种清洁离子注入系统的前级以至少部分地从所述前级去除电离相关沉积物的方法，包括使所述前级线路与清洁气体接触，其中所述清洁气体与所述沉积物发生化学反应。 还描述了改善离子注入系统的性能和延长寿命的方法，包括使阴极与气体混合物接触。

公开(公告)号：WO2011056515A2

公开(公告)日：2011-05-12

申请号：PCT/US2010/053977

申请日：2010-10-25

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  JONES, Edward, E. ,  YEDAVE, Sharad, N. ,  TANG, Ying ,  CHAMBERS, Barry, Lewis ,  KAIM, Robert ,  SWEENEY, Joseph, D. ,  BYL, Oleg ,  ZOU, Peng

Inventor： JONES, Edward, E. ,  YEDAVE, Sharad, N. ,  TANG, Ying ,  CHAMBERS, Barry, Lewis ,  KAIM, Robert ,  SWEENEY, Joseph, D. ,  BYL, Oleg ,  ZOU, Peng

IPC: H01J37/317 ,  H01L21/265

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/52 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32055 ,  H01J37/32412 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/022

Abstract: An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

Abstract translation: 一种离子注入系统和方法，用于提供掺杂剂气体供给管线中的掺杂气体的冷却，以通过例如使用诸如B2F4之类的硼源材料或其他BF3替代物的电弧室发热来抵抗掺杂气体的加热和分解。 描述了各种电弧室热管理布置，以及等离子体性质，特定流程布置，清洁过程，功率管理，平衡偏移，提取光学优化，流通道沉积物检测和源寿命优化等方面的改进，以实现高效率 离子注入系统的操作。

公开(公告)号：WO2007127865A3

公开(公告)日：2008-12-11

申请号：PCT/US2007067542

申请日：2007-04-26

Applicant: ADVANCED TECH MATERIALS ,  DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

Inventor： DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

IPC: C25F1/00 ,  C25F3/12

CPC classification number: C23C14/564 ,  C23C16/4405 ,  H01J37/32412 ,  H01J37/32862

Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.

Abstract translation: 一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。 为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。 当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。 当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。 使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F， ，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。