公开(公告)号：WO0163637A2

公开(公告)日：2001-08-30

申请号：PCT/RU0100073

申请日：2001-02-22

Applicant: OOO VYSOKIE T ,  BLYABLIN ALEXANDR ALEXANDROVIC ,  RAKHIMOV ALEXANDR TURSUNOVICH ,  SAMORODOV VLADIMIR ANATOLIEVIC ,  SUETIN NIKOLAI VLADISLAVOVICH

Inventor： BLYABLIN ALEXANDR ALEXANDROVIC ,  RAKHIMOV ALEXANDR TURSUNOVICH ,  SAMORODOV VLADIMIR ANATOLIEVIC ,  SUETIN NIKOLAI VLADISLAVOVICH

IPC: C23C16/26 ,  H01J1/30 ,  H01J9/02 ,  H01J17/06 ,  H01J

CPC classification number: H01J9/025

Abstract: The inventive method relates to microelectronic and consists in the application of an emission layer to elements of an addressable field-emission electrode with the aid of a gas-phase synthesis method in a hydrogen flow accompanied by a supply of a carbonaceous gas. A dielectric backing is made of a high-temperature resistant material and discrete elements of the addressable field-emission electrode are made of a high-temperature resistant metal. the growth rate of the emission layer on the dielectric backing is smaller than the growth rate of the emission layer on the metallic discrete elements as a result of a selected process of depositing the carbonaceous emission layer, namely the backing temperature, the temperature of the reactor threads, the pumping speed of a gas mixture through the reactor, a selected distance between the reactor threads and the backing and a settling time. The cathode metallic discrete elements can be made of two metallic layers. The upper metallic layer is removed before the formation of required configurations from the remaining layer. The layer materials are selected in such a way that the emission characteristics thereof can ensure a required current from the upper metallic layer. For producing a display structure, a control grid is obtained from the metal layer having an emission threshold higher than a field density at which the cathode emits the required current. The inventive method enables to avoid operations of removing the emission layer making it possible to produce flat displays having high characteristics in addition to high performance and low cost.

Abstract translation: 本发明的方法涉及微电子，并且在于借助于伴随着碳质气体供应的氢气流中的气相合成方法将发射层应用于可寻址场致发射电极的元件。 电介质背衬由耐高温材料制成，可寻址场致发射电极的分立元件由耐高温金属制成。 电介质背衬上的发射层的生长速率小于金属离散元件上的发射层的生长速率，这是由于选择的沉积碳质发射层的过程的结果，即背衬温度，反应器的温度 螺纹，通过反应器的气体混合物的泵送速度，反应器螺纹和背衬之间的选定距离和沉降时间。 阴极金属分立元件可以由两个金属层制成。 在从剩余的层形成所需的构造之前去除上部金属层。 以这样的方式选择层材料，即其发射特性可确保来自上金属层的所需电流。 为了制造显示结构，从具有高于阴极发射所需电流的场密度的发光阈值的金属层获得控制栅。 本发明的方法能够避免除去发射层的操作，使得除了高性能和低成本之外，还可以生产具有高特性的平板显示器。

公开(公告)号：WO9960597A9

公开(公告)日：2000-02-24

申请号：PCT/RU9900166

申请日：1999-05-19

Applicant: BLYABLIN ALEXANDR ALEXANDROVIC ,  KANDIDOV ANTON VALERIEVICH ,  TIMOFEEV MIKHAIL ARKADIEVICH ,  SELEZNEV BORIS VADIMOVICH ,  PILEVSKY ANDREI ALEXANDROVICH ,  RAKHIMOV ALEXANDR TURSUNOVICH ,  SUETIN NIKOLAI VLADISLAVOVICH ,  SAMORODOV VLADIMIR ANATOLIEVIC

Inventor： BLYABLIN ALEXANDR ALEXANDROVIC ,  KANDIDOV ANTON VALERIEVICH ,  TIMOFEEV MIKHAIL ARKADIEVICH ,  SELEZNEV BORIS VADIMOVICH ,  PILEVSKY ANDREI ALEXANDROVICH ,  RAKHIMOV ALEXANDR TURSUNOVICH ,  SUETIN NIKOLAI VLADISLAVOVICH ,  SAMORODOV VLADIMIR ANATOLIEVIC

IPC: H01J1/30 ,  H01J1/304 ,  H01J9/02

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30457 ,  Y10S977/788 ,  Y10S977/813 ,  Y10S977/89

Abstract: The present invention may be used in the production of highly efficient films for electron field emitters. The cold-emission cathode of the present invention comprises a substrate having a carbon film with an irregular structure applied thereon. This structure comprises carbon micro- and nano-ridges and/or micro- and nano-threads which are perpendicular to the surface of the substrate, which have a characteristic scale of between 0.01 and 1 micron as well as a distribution density of between 0.1 and 100 mu m, and which are coated with a diamond nano-film whose thickness represents a fraction of a micron. The method for producing the cathode involves sequentially depositing two carbon films. A carbon film with nano-barbs is first deposited on a substrate arranged on an anode by igniting a direct-current discharge at a density of between 0.15 and 0.5 A. This deposition is carried out in a mixture containing hydrogen and a carbon-containing additive, under a global pressure of between 50 and 300 torrs, using vapours of ethylic alcohol at a 5 to 15 % concentration or vapours of methane at a 6 to 30 % concentration, and at a temperature on the substrate of between 600 and 1100 DEG C. A diamond nano-film is then deposited on the graphite film thus grown.

Abstract translation: 本发明可用于生产用于电子场发射体的高效膜。 本发明的冷发射阴极包括其上施加有不规则结构的碳膜的基板。 该结构包括垂直于衬底表面的碳微米和纳米脊和/或微米和纳米线，其特征尺度为0.01至1微米，分布密度为0.1至 100微米，并且其上涂覆有厚度为微米级分的金刚石纳米薄膜。 制造阴极的方法包括依次沉积两个碳膜。 首先通过以0.15-0.5A的密度点燃直流放电，首先将具有纳米倒钩的碳膜沉积在布置在阳极上的衬底上。该沉积在含有氢和含碳添加剂的混合物中进行 在50至300托之间的全球压力下，使用浓度为5至15％的乙醇的蒸气或6至30％浓度的甲烷蒸气，并且在600至1100℃的温度下 然后在由此生长的石墨膜上沉积金刚石纳米膜。