公开(公告)号：WO2011056484A3

公开(公告)日：2011-08-04

申请号：PCT/US2010053858

申请日：2010-10-22

Applicant: LAM RES CORP ,  SINGH HARMEET ,  SANT SANKET ,  CHOU SHANG-I ,  VAHEDI VAHID ,  CASAES RAPHAEL ,  RAMACHANDRAN SEETHARAMAN

Inventor： SINGH HARMEET ,  SANT SANKET ,  CHOU SHANG-I ,  VAHEDI VAHID ,  CASAES RAPHAEL ,  RAMACHANDRAN SEETHARAMAN

IPC: H01L21/302 ,  H01L21/677

CPC classification number: H01L21/02057 ,  H01L21/67017 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

Abstract: A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or H2O. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.

Abstract translation: 将晶片设置在入口加载锁定室中。 在入口装载锁定室中产生真空。 晶片被输送到处理工具。 在处理室中处理晶片以提供经处理的晶片，其中处理形成卤素残余物。 在处理晶片之后，在处理室中提供脱气步骤。 将经处理的晶片转移到脱气室中。 处理的晶片在脱气室中用UV光和包含臭氧，氧气或H 2 O中的至少一种的气体流进行处理。 停止气体流动。 UV灯停止。 将经处理的晶片从脱气室中取出。

公开(公告)号：WO2011056484A2

公开(公告)日：2011-05-12

申请号：PCT/US2010/053858

申请日：2010-10-22

Applicant: LAM RESEARCH CORPORATION ,  SINGH, Harmeet ,  SANT, Sanket ,  CHOU, Shang-I ,  VAHEDI, Vahid ,  CASAES, Raphael ,  RAMACHANDRAN, Seetharaman

Inventor： SINGH, Harmeet ,  SANT, Sanket ,  CHOU, Shang-I ,  VAHEDI, Vahid ,  CASAES, Raphael ,  RAMACHANDRAN, Seetharaman

IPC: H01L21/302 ,  H01L21/677

CPC classification number: H01L21/02057 ,  H01L21/67017 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

Abstract: A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or H 2 O. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.

Abstract translation: 将晶片提供到入口负载锁定室中。 在入口负载锁定室中产生真空。 晶圆被运送到加工工具。 晶片在处理室中处理以提供处理后的晶片，其中处理形成卤素残余物。 在处理晶片之后在处理室中提供脱气步骤。 处理后的晶片被转移到脱气室中。 处理后的晶片在除气室中用UV光和包含臭氧，氧气或H 2 O中的至少一种的气流处理。 气体流动停止。 紫外线停止。 处理后的晶圆从脱气室中取出。