公开(公告)号：WO2012102765A1

公开(公告)日：2012-08-02

申请号：PCT/US2011/053230

申请日：2011-09-26

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CHARNS, Leslie ,  CUMMINGS, Jason, E. ,  HUPKA, Lukasz, J. ,  KOLI, Dinesh, R. ,  KONNO, Tomohisa ,  KRISHNAN, Mahadevaiyer ,  LOFARO, Michael, F. ,  NALASKOWSKI, Jakub ,  NODA, Masahiro ,  PENIGALAPATI, Dinesh ,  YAMANAKA, Tatsuya

Inventor： CHARNS, Leslie ,  CUMMINGS, Jason, E. ,  HUPKA, Lukasz, J. ,  KOLI, Dinesh, R. ,  KONNO, Tomohisa ,  KRISHNAN, Mahadevaiyer ,  LOFARO, Michael, F. ,  NALASKOWSKI, Jakub ,  NODA, Masahiro ,  PENIGALAPATI, Dinesh ,  YAMANAKA, Tatsuya

IPC: H01L21/304 ,  H01L21/76

CPC classification number: H01L21/31053 ,  C09G1/02 ,  H01L21/76224

Abstract: A polishing method includes polishing, in a first polish, a wafer to remove overburden and planarize a top layer leaving a portion remaining on an underlying layer. A second polishing step includes two phases. In a first phase, the top layer is removed and the underlying layer is exposed, with a top layer to underlying layer selectivity of between about 1:1 to about 2:1 to provide a planar topography. In a second phase, residual portions of the top layer are removed from a top of the underlying layer to ensure complete exposure of an underlying layer surface.

Abstract translation: 抛光方法包括在第一抛光剂中抛光晶片以去除覆盖层并平坦化顶层，留下保留在下层上的部分。 第二抛光步骤包括两个阶段。 在第一阶段中，去除顶层并暴露下层，其顶层至基层选择性为约1:1至约2:1，以提供平面形貌。 在第二阶段中，顶层的残余部分从下层的顶部去除，以确保下层的表面完全曝光。

公开(公告)号：WO2012047770A2

公开(公告)日：2012-04-12

申请号：PCT/US2011/054521

申请日：2011-10-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CHANG, Josephine, B. ,  CHARNS, Leslie ,  CUMMINGS, Jason, E. ,  GUILLORN, Michael, A. ,  HUPKA, Lukasz, J. ,  KOLI, Dinesh ,  KONNO, Tomohisa ,  KRISHNAN, Mahadevaiyer ,  LOFARO, Michael, F. ,  NALASKOWSKI, Jakub, W. ,  NODA, Masahiro ,  PENIGALAPATI, Dinesh, K. ,  YAMANAKA, Tatsuya

Inventor： CHANG, Josephine, B. ,  CHARNS, Leslie ,  CUMMINGS, Jason, E. ,  GUILLORN, Michael, A. ,  HUPKA, Lukasz, J. ,  KOLI, Dinesh ,  KONNO, Tomohisa ,  KRISHNAN, Mahadevaiyer ,  LOFARO, Michael, F. ,  NALASKOWSKI, Jakub, W. ,  NODA, Masahiro ,  PENIGALAPATI, Dinesh, K. ,  YAMANAKA, Tatsuya

IPC: H01L21/304 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L21/31053 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545

Abstract: A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying layers of a second material and a third material such that a selectivity of the top layer material to the second material to the third material is between about 1:1:1 to about 2:1:1 to provide a planar topography.

Abstract translation: 平坦化方法包括在第一化学机械抛光步骤中平坦化半导体晶片，以去除覆盖层并平坦化顶层，在底层上留下顶层材料的厚度。 顶层材料在第二化学机械抛光步骤中被平面化以进一步去除顶层并暴露第二材料和第三材料的下层，使得顶层材料对第二材料对第三材料的选择性介于 约1:1:1至约2:1:1以提供平面形貌。

公开(公告)号：WO2012047770A3

公开(公告)日：2012-06-21

申请号：PCT/US2011054521

申请日：2011-10-03

Applicant: IBM ,  CHANG JOSEPHINE B ,  CHARNS LESLIE ,  CUMMINGS JASON E ,  GUILLORN MICHAEL A ,  HUPKA LUKASZ J ,  KOLI DINESH ,  KONNO TOMOHISA ,  KRISHNAN MAHADEVAIYER ,  LOFARO MICHAEL F ,  NALASKOWSKI JAKUB W ,  NODA MASAHIRO ,  PENIGALAPATI DINESH K ,  YAMANAKA TATSUYA

Inventor： CHANG JOSEPHINE B ,  CHARNS LESLIE ,  CUMMINGS JASON E ,  GUILLORN MICHAEL A ,  HUPKA LUKASZ J ,  KOLI DINESH ,  KONNO TOMOHISA ,  KRISHNAN MAHADEVAIYER ,  LOFARO MICHAEL F ,  NALASKOWSKI JAKUB W ,  NODA MASAHIRO ,  PENIGALAPATI DINESH K ,  YAMANAKA TATSUYA

IPC: H01L21/304 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L21/31053 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545

Abstract: A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying layers of a second material and a third material such that a selectivity of the top layer material to the second material to the third material is between about 1:1:1 to about 2:1:1 to provide a planar topography.

Abstract translation: 平面化方法包括在第一化学机械抛光步骤中平坦化半导体晶片以去除覆盖层并平坦化顶层，从而在顶层之上留下厚度的顶层材料。 顶层材料在第二化学机械抛光步骤中被平坦化，以进一步去除顶层并暴露第二材料和第三材料的下层，使得顶层材料对第二材料对第三材料的选择性在 约1：1至约2：1：1，以提供平面形貌。