Abstract:
A method and apparatus for packaging semiconductor dies for increased thermal conductivity and simpler fabrication when compared to conventional semiconductor packaging techniques are provided. The packaging techniques described herein may be suitable for various semiconductor devices, such as light-emitting diodes (LEDs), central processing units (CPUs), graphics processing units (GPUs), microcontroller units (MCUs), and digital signal processors (DSPs). For some embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower cavity with one or more metal layers deposited therein to dissipate heat away from the semiconductor dies. For other embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower surface with one or more metal layers deposited thereon for efficient heat dissipation.
Abstract:
A thermal interface material (10) includes 100 parts by weight of a silicone oil (11) and 800˜1200 parts by weight of a metal powder (12) mixed into the silicone oil. An outer surface of each metal particle (121) of the metal powder is coated with a metal oxide layer (122). A method of producing the thermal interface material includes steps of: (1) applying a layer of organo coupling agent on the metal powder; (2) heating the metal powder at a temperature between 200 to 300° C. to coat a metal oxide layer on an outer surface of the metal powder; and (3) adding the metal powder with the coated metal oxide layer to a silicone oil. The thermal interface material has an excellent thermal conductivity and an excellent electrical insulating property.
Abstract:
Light-emitting diode (LED) packages with improved heat transfer paths for LED dies encased therein when compared to conventional LED packages are provided. For some embodiments, the LED package includes a ceramic substrate having a top cavity with one or more LED dies disposed within and having a bottom cavity for receiving a metallic insert to dissipate heat away from the LED dies. For other embodiments, an LED package is provided that includes a ceramic substrate having a heat spreader coupled to thermal vias filled with a highly thermally conductive composite.
Abstract:
A semiconductor device (10) includes a heat source (12), a heat-dissipating component (13) for dissipating heat generated by the heat source, and a thermal interface material (14) filled in spaces formed between the heat source and the heat-dissipating component. The thermal interface material includes 30% to 60% by weight of bismuth, up to 40% by weight of tin, and the rest indium.
Abstract:
A semiconductor device (10) includes a heat source (12), a heat-dissipating component (13) for dissipating heat generated by the heat source, and a thermal interface material (14) filled in a space formed between the heat source and the heat-dissipating component. The thermal interface material includes a mixture of first copper powders having an average particle size of 2 um and second copper powders having an average particle size of 5 um, a silicone oil having a viscosity from 50 to 50,000 cs at 25° C., and at least one oxide powder selected from the group consisting of zinc oxide and alumina powders. The mixture of copper powders is 50% to 90% in weight, the silicone oil is 5% to 15% in weight and the at least one oxide powder is 0% to 35% in weight of the thermal interface material.
Abstract:
A semiconductor device includes a heat source, a heat-dissipating component for dissipating heat generated by the heat source, and thermal interface material filled in a space formed between the heat source and the heat-dissipating component. The thermal interface material includes 50% to 90% in weight of at least one metal powders having an average particle size of 2 to 20 μm and selected from the group consisting of spherical tin powders and powders of memory alloy, and 5% to 15% in weight of silicone oil having a viscosity from 50 tO 50,000 cs at 25° C.
Abstract:
A heat pipe (10) includes a pipe body (20) having an inner wall (22) and a screen mesh (30) disposed on the inner wall of the pipe body. The screen mesh is in the form of a multi-layer structure with at least one layer thereof having an average pore size different from that of the other layers. The layer with large-sized pores is capable of reducing the flow resistance to the condensed fluid to flow back, whereas the layer with small-size pores is capable of providing a relatively large capillary pressure for drawing the condensed fluid from the condensing section to the evaporating section.
Abstract:
A heat pipe (10) includes a pipe body (30) filled with working fluid, a screen mesh (50) located in the pipe body, a porous support member (70) supporting the screen mesh to contact with an inner wall (32) of the pipe body.
Abstract:
A solid state light module incorporating light emitting diodes (LEDs) disposed on a metal substrate, a solid state lighting system employing such modules, and method of replacing LEDs of the light modules are provided. The metal substrate may allow for lower LED junction temperature and, hence, a longer device lifetime. In addition, the metal substrate may allow for the potential omission of a heat sink, which may reduce light module size, when compared to conventional solid state light emitters.
Abstract:
A thermal interface material includes 100 parts by weight of base oil including amino-modified silicone fluid and at least one of methylphenylsilicone fluid and fluorosilicone fluid, and 800 to 1200 parts by weight of fillers filled in the base oil. The fillers have an average particle size of 0.1 to 5 um and are selected from the group consisting of zinc oxide powder, alumina powder and metallic aluminum powder.