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公开(公告)号：WO2004060548A2
公开(公告)日：2004-07-22
申请号：PCT/US0338687
申请日：2003-12-05
Applicant: GEN ELECTRIC , D EVELYN MARK PHILIP , LEONELLI ROBERT VINCENT JR , ALLISON PETER SAM , NARANG KRISTI JEAN , GIDDINGS ROBERT ARTHUR
Inventor： D EVELYN MARK PHILIP , LEONELLI ROBERT VINCENT JR , ALLISON PETER SAM , NARANG KRISTI JEAN , GIDDINGS ROBERT ARTHUR
IPC: B01J3/06
CPC classification number: B01J3/065 , B01J3/062 , B01J2203/0655 , B01J2203/0665 , B30B15/34 , Y10T117/1004
Abstract: A high temperature/high pressure (HP/HT) apparatus for converting feedstock housed in a capsule into product crystals, comprising at least two electrical heating paths for independent control of both the mean temperature in the reaction cell and the temperature gradient across the reaction cell.
Abstract translation: 用于将容纳在胶囊中的原料转化成产品晶体的高温/高压（HP / HT）装置，包括用于独立控制反应池中的平均温度和跨过反应池的温度梯度的至少两个电加热路径 。
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公开(公告)号：WO2009002635A3
公开(公告)日：2010-07-29
申请号：PCT/US2008064178
申请日：2008-05-20
Applicant: GEN ELECTRIC , MCNULTY THOMAS FRANCIS , LEMAN JOHN THOMAS , LOU VICTOR LIENKONG , MENDICINO FRANK DOMINIC , SHUBA ROMAN , D EVELYN MARK PHILIP , LEWIS LARRY NEIL , HEINRICH VAN DONGEREN JOHAN
Inventor： MCNULTY THOMAS FRANCIS , LEMAN JOHN THOMAS , LOU VICTOR LIENKONG , MENDICINO FRANK DOMINIC , SHUBA ROMAN , D EVELYN MARK PHILIP , LEWIS LARRY NEIL , HEINRICH VAN DONGEREN JOHAN
IPC: C01B33/021 , H01L31/02
CPC classification number: C01B33/025 , C01B33/023 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550°C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.
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公开(公告)号：WO2007078844A3
公开(公告)日：2007-08-30
申请号：PCT/US2006047743
申请日：2006-12-15
Applicant: GEN ELECTRIC , LEMAN JOHN THOMAS , PARK DONG-SIL , D EVELYN MARK PHILIP , PETERSON MILES STANDISH , SHARIFI FRED , HIBSHMAN JOELL RANDOLPH
Inventor： LEMAN JOHN THOMAS , PARK DONG-SIL , D EVELYN MARK PHILIP , PETERSON MILES STANDISH , SHARIFI FRED , HIBSHMAN JOELL RANDOLPH
IPC: C30B29/40
CPC classification number: C30B25/00 , C01B21/0602 , C01B21/0632 , C01B21/0722 , C01P2002/52 , C01P2002/90 , C01P2004/03 , C01P2004/61 , C01P2006/11 , C01P2006/14 , C01P2006/80 , C30B29/403 , C30B29/406
Abstract: A composition including a polycrystalline metal nitride having a number of grains is provided. These grains have a columnar structure with one or more properties such as, an average grain size, a tilt angle, an impurity content, a porosity, a density, and an atomic fraction of the metal in the metal nitride. The metal nitride is made via a method comprising the steps of introducing at least a group III metal in a chamber, flowing a nitrogen-containing material and a hydrogen halide into the chamber, wherein the nitrogen-containing material reacts with the group III metal in the chamber to form the metal nitride. An apparatus for preparing a group III polycrystalline metal nitride is provided wherein group III metal is introduced into the chamber through a raw material inlet as a raw material feedstock.
Abstract translation: 提供了包含多个晶粒的多晶金属氮化物的组合物。 这些晶粒具有在金属氮化物中具有金属的平均晶粒尺寸，倾斜角，杂质含量，孔隙率，密度和原子分数等一个或多个性质的柱状结构。 金属氮化物是通过以下方法制备的，所述方法包括以下步骤：在室中引入至少III族金属，将含氮材料和卤化氢流入室中，其中含氮材料与III族金属反应 该室形成金属氮化物。 提供了一种用于制备III族多晶金属氮化物的设备，其中通过作为原料原料的原料入口将III族金属引入室中。
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Patent Agency Ranking
公开(公告)号：WO2009002635A8
公开(公告)日：2010-12-02
申请号：PCT/US2008064178
申请日：2008-05-20
Applicant: GEN ELECTRIC , MCNULTY THOMAS FRANCIS , LEMAN JOHN THOMAS , LEWIS LARRY NEIL , D EVELYN MARK PHILIP , LOU VICTOR LIENKONG , SHUBA ROMAN , LEWIS KENRICK MARTIN , MENDICINO FRANK DOMINIC , HEINRICH VAN DONGEREN JOHAN
Inventor： MCNULTY THOMAS FRANCIS , LEMAN JOHN THOMAS , LEWIS LARRY NEIL , D EVELYN MARK PHILIP , LOU VICTOR LIENKONG , SHUBA ROMAN , LEWIS KENRICK MARTIN , MENDICINO FRANK DOMINIC , HEINRICH VAN DONGEREN JOHAN
IPC: C01B33/021 , H01L31/02
CPC classification number: C01B33/025 , C01B33/023 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550°C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.
Abstract translation: 公开了一种形成高纯度元素硅的方法。 该方法包括加热硅胶组合物或源自硅胶组合物的中间组合物的步骤，其中硅胶组合物或中间组合物包含至少约5重量％的碳，并且加热温度高于约1550℃ C。 加热步骤导致生产包含元素硅的产品。 本发明的另一方面涉及一种制造光伏电池的方法。 该方法包括由如本公开所述制备的元素硅形成半导体衬底的步骤。 然后进行额外的步骤来制造光伏器件。
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公开(公告)号：WO2009002635A9
公开(公告)日：2010-09-30
申请号：PCT/US2008064178
申请日：2008-05-20
Applicant: GEN ELECTRIC , MCNULTY THOMAS FRANCIS , LEMAN JOHN THOMAS , LOU VICTOR LIENKONG , MENDICINO FRANK DOMINIC , SHUBA ROMAN , D EVELYN MARK PHILIP , LEWIS LARRY NEIL , HEINRICH VAN DONGEREN JOHAN
Inventor： MCNULTY THOMAS FRANCIS , LEMAN JOHN THOMAS , LOU VICTOR LIENKONG , MENDICINO FRANK DOMINIC , SHUBA ROMAN , D EVELYN MARK PHILIP , LEWIS LARRY NEIL , HEINRICH VAN DONGEREN JOHAN
IPC: C01B33/021 , H01L31/02
CPC classification number: C01B33/025 , C01B33/023 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550°C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.
Abstract translation: 公开了形成高纯度元素硅的方法。 该方法包括加热硅胶组合物或由硅胶组合物衍生的中间体组合物的步骤，其中硅胶组合物或中间体组合物包含至少约5重量％的碳，加热温度高于约1550℃ C。 加热步骤导致包括元素硅的产品的生产。 本发明的另一方面涉及一种制造光伏电池的方法。 该方法包括从如本公开所述制备的元素硅形成半导体衬底的步骤。 然后进行附加步骤以制造光伏器件。
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公开(公告)号：WO2008085998A3
公开(公告)日：2008-10-09
申请号：PCT/US2008000302
申请日：2008-01-09
Applicant: MOMENTIVE PERFORMANCE MAT INC , D EVELYN MARK PHILIP , PARK DONG-SIL , LEBOEUF STEVEN FRANCIS , ROWLAND LARRY BURTON , NARANG KRISTI JEAN , HONG HUICONG , ARTHUR STEPHEN DALEY , SANDVIK PETER MICAH
Inventor： D EVELYN MARK PHILIP , PARK DONG-SIL , LEBOEUF STEVEN FRANCIS , ROWLAND LARRY BURTON , NARANG KRISTI JEAN , HONG HUICONG , ARTHUR STEPHEN DALEY , SANDVIK PETER MICAH
CPC classification number: C30B29/406 , C30B7/10 , H01S5/305 , H01S5/32341 , Y10T428/21
Abstract: A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3x10 18 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.
Abstract translation: 提供了包括镓和氮的结晶组合物。 结晶组合物可以具有以每立方厘米小于约3×10 18的浓度存在的氧量，并且在确定体积的结晶组合物中可以没有二维平面边界缺陷。 该体积可以具有至少一个尺寸为约2.75毫米或更大，并且该体积可具有小于约10,000每平方厘米的一维线性缺陷位错密度。
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公开(公告)号：WO2004060548A8
公开(公告)日：2005-11-03
申请号：PCT/US0338687
申请日：2003-12-05
Applicant: GEN ELECTRIC , D EVELYN MARK PHILIP , LEONELLI ROBERT VINCENT JR , ALLISON PETER SAM , NARANG KRISTI JEAN , GIDDINGS ROBERT ARTHUR
Inventor： D EVELYN MARK PHILIP , LEONELLI ROBERT VINCENT JR , ALLISON PETER SAM , NARANG KRISTI JEAN , GIDDINGS ROBERT ARTHUR
IPC: B01J3/06
CPC classification number: B01J3/065 , B01J3/062 , B01J2203/0655 , B01J2203/0665 , B30B15/34 , Y10T117/1004
Abstract: A high temperature/high pressure (HP/HT) apparatus for converting feedstock housed in a capsule into product crystals, comprising at least two electrical heating paths for independent control of both the mean temperature in the reaction cell and the temperature gradient across the reaction cell.
Abstract translation: 用于将容纳在胶囊中的原料转化成产品晶体的高温/高压（HP / HT）装置，包括用于独立控制反应池中的平均温度和跨过反应池的温度梯度的至少两个电加热路径 。
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公开(公告)号：WO2008051585A3
公开(公告)日：2008-10-02
申请号：PCT/US2007022592
申请日：2007-10-25
Applicant: MOMENTIVE PERFORMANCE MAT INC , D EVELYN MARK PHILIP , PARK DONG-SIL , LEBOEUF STEVEN FRANCIS , ROWLAND LARRY BURTON , NARANG KRISTI JEAN , HONG HUICONG , SANDVIK PETER MICAH
Inventor： D EVELYN MARK PHILIP , PARK DONG-SIL , LEBOEUF STEVEN FRANCIS , ROWLAND LARRY BURTON , NARANG KRISTI JEAN , HONG HUICONG , SANDVIK PETER MICAH
CPC classification number: C30B29/406 , C30B7/10
Abstract: There is provided a GaN single crystal at least about 2.75 millimeters in diameter, with a dislocation density less than about 10 4 cm -1 , and having substantially no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.
Abstract translation: 提供了直径至少约2.75毫米的GaN单晶，位错密度小于约10 -4厘米-1，并且基本上没有倾斜边界。 还公开了形成GaN单晶的方法。 该方法包括在室中提供成核中心，GaN源材料和GaN溶剂。 该室被加压。 在室中产生第一和第二温度分布，使得溶剂在室的成核区域中过饱和。 第一和第二温度分布在室内具有不同的温度梯度。
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