公开(公告)号：WO2012131075A1

公开(公告)日：2012-10-04

申请号：PCT/EP2012/055894

申请日：2012-03-30

Applicant: SOITEC ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  SADAKA, Mariam ,  RADU, Ionut ,  LANDRU, Didier ,  DI CIOCCIO, Lea

Inventor： SADAKA, Mariam ,  RADU, Ionut ,  LANDRU, Didier ,  DI CIOCCIO, Lea

IPC: H01L21/60 ,  H01L23/485

CPC classification number: H01L24/03 ,  H01L23/481 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L2224/03452 ,  H01L2224/03464 ,  H01L2224/03466 ,  H01L2224/03845 ,  H01L2224/03848 ,  H01L2224/039 ,  H01L2224/03901 ,  H01L2224/05546 ,  H01L2224/08121 ,  H01L2224/08146 ,  H01L2224/0903 ,  H01L2224/80097 ,  H01L2224/80099 ,  H01L2224/80201 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01067 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2224/034

Abstract: Methods of bonding together semiconductor structures include annealing a first metal feature on a first semiconductor structure, bonding the first metal feature to a second metal feature of a second semiconductor structure to form a bonded metal structure that comprises the first metal feature and the second metal feature, and annealing the bonded metal structure. Annealing the first metal feature may comprise subjecting the first metal feature to a pre-bonding thermal budget, and annealing the bonded metal structure may comprise subjecting the bonded metal structure to a post-bonding thermal budget that is less than the pre-bonding thermal budget. Bonded semiconductor structures are fabricated using such methods.

Abstract translation: 将半导体结构结合在一起的方法包括退火第一半导体结构上的第一金属特征，将第一金属特征结合到第二半导体结构的第二金属特征，以形成包含第一金属特征和第二金属特征 ，并对结合的金属结构进行退火。 退火第一金属特征可以包括使第一金属特征经受预结合热预算，并且对接合的金属结构进行退火可以包括使结合的金属结构经受低于预粘合热预算的后粘合热预算 。 使用这种方法制造粘合的半导体结构。

公开(公告)号：WO2005057637A3

公开(公告)日：2006-03-30

申请号：PCT/FR2004050656

申请日：2004-12-06

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  MORICEAU HUBERT ,  MORALES CHRISTOPHE ,  DI CIOCCIO LEA

Inventor： MORICEAU HUBERT ,  MORALES CHRISTOPHE ,  DI CIOCCIO LEA

IPC: H01L21/18 ,  H01L21/20 ,  H01L21/98 ,  H01L25/065 ,  H01L21/58

CPC classification number: H01L25/50 ,  H01L25/0657 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a method for the direct molecular adhesion of an electronic component (6) to a polymer (4). According to the invention, the polymer (4) is covered with a bonding layer (5), for example, of silicon oxide, which eliminates the problems caused by the presence of hydrocarbons. The inventive method can be used to produce three-dimensional structures (10) without glue.

Abstract translation: 本发明涉及一种将电子部件（6）直接分子粘合到聚合物（4）上的方法。 根据本发明，聚合物（4）被例如氧化硅的接合层（5）覆盖，这消除了由烃的存在引起的问题。 本发明的方法可用于生产没有胶水的三维结构（10）。

公开(公告)号：WO2012028793A3

公开(公告)日：2012-06-07

申请号：PCT/FR2011000484

申请日：2011-08-31

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  VANDROUX LAURENT ,  DI CIOCCIO LEA ,  GUEGUEN PIERRIC

Inventor： VANDROUX LAURENT ,  DI CIOCCIO LEA ,  GUEGUEN PIERRIC

IPC: H01L21/02 ,  H01L21/98 ,  H01L23/00

CPC classification number: H01R43/02 ,  C09J2205/31 ,  C09J2400/163 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/185 ,  H01L21/2007 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L25/50 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05546 ,  H01L2224/05571 ,  H01L2224/05576 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/05688 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/13099 ,  H01L2224/80012 ,  H01L2224/80013 ,  H01L2224/8002 ,  H01L2224/80097 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80905 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01058 ,  H01L2924/01079 ,  H01L2224/80001 ,  H01L2224/05552

Abstract: A method of bonding between a first surface (1) provided with at least one copper zone (3), surrounded by a silicon oxide zone (4) and a second surface (1') comprises an operation of treating the first surface (1) with a plasma before the first surface (1) is brought into contact with the second surface (V). The plasma is generated from a gas source containing an agent for nitriding the silicon oxide and an agent for reducing the copper oxide, based on hydrogen. The gas source may comprise an N2/NH3 and/or N2/H2 gas mixture or even an N2O/H2 gas mixture or else ammonia gas, which then acts both as nitriding agent and reducing agent. The plasma obtained from this gas source then necessarily comprises nitrogen and hydrogen, thereby making it possible, in a single operation, to provide a strong bond between the first and second surfaces (1, 1').

Abstract translation: 设置有由氧化硅区域（4）包围的至少一个铜区域（3）的第一表面（1）和第二表面（1'）之间的接合方法包括处理第一表面（1）的操作， 在第一表面（1）与第二表面（V）接触之前具有等离子体。 基于氢气，从含有用于氮化氧化硅的试剂和用于还原氧化铜的试剂的气体源产生等离子体。 气源可以包括N 2 / NH 3和/或N 2 / H 2气体混合物或甚至N 2 O / H 2气体混合物或氨气，其然后作为氮化剂和还原剂起作用。 从该气体源获得的等离子体必然包含氮和氢，从而在单次操作中可以在第一和第二表面（1,1'）之间提供强结合。

公开(公告)号：WO2006043000A3

公开(公告)日：2006-12-21

申请号：PCT/FR2005050863

申请日：2005-10-18

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  KOSTRZEWA MAREK ,  DI CIOCCIO LEA ,  ZUSSY MARC

Inventor： KOSTRZEWA MAREK ,  DI CIOCCIO LEA ,  ZUSSY MARC

IPC: H01L21/68 ,  H01L21/00

CPC classification number: H01L24/83 ,  H01L21/561 ,  H01L21/568 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L24/29 ,  H01L24/96 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/2919 ,  H01L2224/8385 ,  H01L2224/83894 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01032

Abstract: The invention relates to a method for transferring at least one micrometer or millimeter sized object to a reception substrate by means of a handle. The inventive method consists in fixing a polymer handle to said object in such a way that a deformable structure consisting of the superimposed handle and object is obtainable, in preparing the surface of the object face which is opposite to the handle for the adhesion thereof to the reception substrate face, in bringing said object face into contact with said reception substrate face, adhering it thereto after the deformation at least of the handle and in removing the polymer handle.

Abstract translation: 本发明涉及一种借助于手柄将至少一个微米或毫米大小的物体转移到接收基板的方法。 本发明的方法在于将聚合物手柄固定到所述物体上，使得可以获得由叠加的手柄和物体组成的可变形结构，在制备物体表面的与手柄相对的表面以便粘附到手柄和物体上 在使所述物体表面与所述接收基板表面接触时，在所述手柄的至少一部分变形并且在移除所述聚合物手柄之后将所述物体表面粘附到其上。

公开(公告)号：WO2004027844A3

公开(公告)日：2004-05-21

申请号：PCT/FR0350044

申请日：2003-09-01

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  SOITEC SILICON ON INSULATOR ,  DI CIOCCIO LEA ,  TEMPLIER FRANCOIS ,  BILLON THIERRY ,  LETERTRE FABRICE

Inventor： DI CIOCCIO LEA ,  TEMPLIER FRANCOIS ,  BILLON THIERRY ,  LETERTRE FABRICE

IPC: H01L29/872 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L21/338 ,  H01L21/76 ,  H01L27/12 ,  H01L29/47 ,  H01L29/786 ,  H01L29/812 ,  H01L29/861

CPC classification number: H01L21/7602 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/2007

Abstract: The invention relates to a method for the production of a composite SiCOI-type substrate comprising the following stages: provision of an initial substrate comprising an Si or SiC support (1) supporting an SiO2 layer (2) on which a thin SiC layer (3) is applied; expitaxy of the SiC (4) on the thin SiC layer (3). Epitaxy is carried out at the following temperatures: from 1450 DEG C in order to obtain 6H or 4H polytype epitaxy (4) on the thin, applied 6H or 4H polytype layer (3) respectively; if the support (1) is made of SiC, from 1350C in order to obtain 3C polytype epitaxy (4) on the thin, applied 3C polytype layer (3); if the support (1) is made of Si or SiC, from 1350 DEG C in order to obtain 6H or 4H polytype epitaxy (4) on a thin, applied 6H or 4H polytype layer (3) respectively if the support (1) is made of Si.

Abstract translation: 本发明涉及一种生产复合SiCOI型基片的方法，包括以下阶段：提供包括支撑SiO 2层（2）的Si或SiC载体（1）的初始基底，其上形成有薄的SiC层（3 ） 被申请;被应用; SiC（4）在薄SiC层（3）上的析晶。 外延在以下温度下进行：从1450℃分别在薄的施加的6H或4H多型层（3）上分别获得6H或4H多型外延（4）; 如果支撑体（1）由SiC制成，则在1350℃下，在薄的应用的3C多型层（3）上获得3C多型外延（4）; 如果载体（1）由Si或SiC由1350℃制成，以便在薄的施加的6H或4H多型层（3）上分别获得6H或4H多型外延（4），如果载体（1）为 由Si制成。

公开(公告)号：WO2012010662A3

公开(公告)日：2012-05-24

申请号：PCT/EP2011062540

申请日：2011-07-21

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  DI CIOCCIO LEA ,  GUEGUEN PIERRIC

Inventor： DI CIOCCIO LEA ,  GUEGUEN PIERRIC

IPC: H01L21/60 ,  H01L21/98 ,  H01L23/485

CPC classification number: H01L21/70 ,  H01L21/2007 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/11 ,  H01L24/12 ,  H01L24/80 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05562 ,  H01L2224/0557 ,  H01L2224/05647 ,  H01L2224/08121 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81894 ,  H01L2224/83894 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05552

Abstract: Process for direct bonding a first (I) and a second (II) element, each element being provided with a surface comprising copper portions (6, 106) separated by a dielectric material (4, 104), said process comprising: A) a step of polishing said surfaces so that the surfaces to be joined can be direct bonded; B) a step of selectively forming a diffusion barrier (10, 110) on the copper portions (6, 106) of the first and second elements, the surface of the second diffusion barrier of the first and second elements being flush with said surface to within less than 5 nanometres; and C) a step of bringing the two surfaces into contact with each other so that the copper portions (6, 106) of one surface at least partially cover the copper portions (106, 6) of the other surface, and so that the surfaces are direct bonded.

Abstract translation: 用于直接接合第一（I）和第二（II）元件的方法，每个元件设置有包括由电介质材料（4,104）分隔的铜部分（6,106）的表面，所述方法包括：A） 对所述表面进行抛光的步骤，使得待接合的表面可以直接粘合; B）在第一和第二元件的铜部分（6,106）上选择性地形成扩散阻挡层（10,110）的步骤，第一和第二元件的第二扩散阻挡层的表面与所述表面齐平 小于5纳米; 以及C）使两个表面彼此接触的步骤，使得一个表面的铜部分（6,106）至少部分地覆盖另一个表面的铜部分（106,6），并且使得表面 是直接粘合。

公开(公告)号：WO2009019265A2

公开(公告)日：2009-02-12

申请号：PCT/EP2008060261

申请日：2008-08-05

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  BORDEL DAMIEN ,  DI CIOCCIO LEA

Inventor： BORDEL DAMIEN ,  DI CIOCCIO LEA

IPC: H01L21/762 ,  H01L21/20

CPC classification number: H01L21/2007

Abstract: The invention relates to a method for transferring a layer (2) to be transferred onto a support, comprising: - the transfer of said layer, assembled on an initial substrate (4), onto a liquid layer (10) previously deposited on said support (12), - the release of said layer from the initial substrate (4), by chemical attack, - the evacuation of the liquid layer (10) to allow the molecular adhesion of the layer to the support (12).

Abstract translation: 本发明涉及一种用于转移待转移到载体上的层（2）的方法，包括：将组装在初始衬底（4）上的所述层转移到预先沉积在所述载体上的液体层（10）上， （12）， - 通过化学侵蚀从所述初始基底（4）释放所述层， - 液体层（10）的抽空以使所述层与所述载体（12）分子粘附。

公开(公告)号：WO2004027878A3

公开(公告)日：2004-05-06

申请号：PCT/FR0350045

申请日：2003-09-01

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  SOITEC SILICON ON INSULATOR ,  TEMPLIER FRANCOIS ,  DI CIOCCIO LEA ,  BILLON THIERRY ,  LETERTRE FABRICE

Inventor： TEMPLIER FRANCOIS ,  DI CIOCCIO LEA ,  BILLON THIERRY ,  LETERTRE FABRICE

IPC: H01L29/20 ,  H01L29/24 ,  H01L29/47 ,  H01L29/868 ,  H01L29/872 ,  H01L27/08

CPC classification number: H01L29/872 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/868

Abstract: The invention relates to a power semiconductor device made of an epitaxied semiconductor material on a stacked structure (10), comprising a semiconductor material layer (13) which is applied to a first surface of a support substrate (11) and is integral with the support substrate (11) by means of an insulating layer (12), said support substrate comprising electric conduction means between the first surface and the second surface, the applied semiconductor material layer (13) acting as an epitaxy support layer for the epitaxied semiconductor material (14, 15).Means for electric connection (16, 17) of said device are provided on the epitaxied semiconductor material and on the second surface of the support substrate, whereby an electric connection via the electrically insulating layer and electric conduction means electrically links the epitaxied semiconductor material (14, 15) to electric connection means (17) provided on the second surface of the support substrate (11).

Abstract translation: 本发明涉及一种由堆叠结构（10）上的表面半导体材料制成的功率半导体器件，包括半导体材料层（13），其被施加到支撑衬底（11）的第一表面并与支撑体 衬底（11），所述支撑衬底包括在第一表面和第二表面之间的导电装置，所施加的半导体材料层（13）用作表面半导体材料的外延支撑层（13） 所述装置的电连接（16,17）的尺寸设置在所述表面半导体材料和所述支撑基板的所述第二表面上，由此经由所述电绝缘层和导电装置的电连接将所述 表面半导体材料（14,15）设置在设置在支撑基板（11）的第二表面上的电连接装置（17）上。

公开(公告)号：WO2009019266A3

公开(公告)日：2009-05-22

申请号：PCT/EP2008060262

申请日：2008-08-05

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  BORDEL DAMIEN ,  DI CIOCCIO LEA ,  KOSTRZEWA MAREK

Inventor： BORDEL DAMIEN ,  DI CIOCCIO LEA ,  KOSTRZEWA MAREK

IPC: H01L21/762

CPC classification number: H01L21/2007 ,  H01L21/187 ,  H01L21/76256 ,  H01L51/0024

Abstract: The invention relates to a method of treating and/or transferring at least one part of an initial substrate, this method comprising: - a) the assembling of at least one initial substrate, and of a first support (6) using a layer (4) of self-assembled molecules, - b) a treatment of said initial substrate, and/or a transfer of at least one part of this initial substrate (2) to a second support (10), - c) an evacuation or an elimination of said layer (4) of self-assembled molecules in order to allow the removal of the first support (6).

Abstract translation: 本发明涉及一种处理和/或转移初始基板的至少一部分的方法，该方法包括：a）使用层（4）装配至少一个初始基板和第一支撑件（6） ）的自组装分子， - b）所述初始基材的处理，和/或该初始基材（2）的至少一部分转移到第二载体（10）， - c）疏散或消除 （4）的自组装分子，以允许去除第一支撑物（6）。

公开(公告)号：WO2007074153A3

公开(公告)日：2008-01-17

申请号：PCT/EP2006070211

申请日：2006-12-26

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  CENTRE NAT RECH SCIENT ,  DI CIOCCIO LEA ,  BORDEL DAMIEN ,  GRENET GENEVIEVE ,  REGRENY PHILIPPE

Inventor： DI CIOCCIO LEA ,  BORDEL DAMIEN ,  GRENET GENEVIEVE ,  REGRENY PHILIPPE

IPC: H01L21/68

CPC classification number: H01L21/76251 ,  H01L21/6835 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/83894 ,  H01L2924/01079 ,  Y10S438/977

Abstract: The invention concerns a method for relaxing a stressed thin film (9), secured via a first main surface to an initial support (9), the second main surface of the thin film (9) being called contact surface, the method including the following successive steps: supplying an intermediate carrier comprising a polymer layer (2); adhesively contacting the contact surface of the stressed thin film (9) with the contact surface of the polymer (2); removing the initial support (9); increasing the temperature of the polymer layer (2); securing the first main surface of the thin film (8) to one surface of the receiving substrate (10); removing the intermediate carrier (6).

Abstract translation: 本发明涉及一种用于松弛经由第一主表面固定到初始支撑件（9）的应力薄膜（9）的方法，所述薄膜（9）的第二主表面被称为接触表面，该方法包括以下 连续步骤：提供包含聚合物层（2）的中间载体; 将应力薄膜（9）的接触表面与聚合物（2）的接触表面粘合地接触; 删除初始支持（9）; 提高聚合物层（2）的温度; 将所述薄膜（8）的第一主表面固定到所述接收基板（10）的一个表面; 移除中间载体（6）。