公开(公告)号：WO1997006548A2

公开(公告)日：1997-02-20

申请号：PCT/RO1995000009

申请日：1995-07-31

Applicant: SC TIBESTI S.A. ALBA IULIA ,  FANICA, Mircea, Mihail ,  IVASCU, Marin ,  STAICU, Liliana ,  ILAS, Germina ,  DUMITRU, Ion

Inventor： SC TIBESTI S.A. ALBA IULIA

IPC: H01J00/00

CPC classification number: H01L21/479 ,  B01D59/16 ,  C30B29/02 ,  C30B33/00 ,  H01L21/324 ,  H01L21/326 ,  H01L21/477

Abstract: An isotope separation method for use in the field of semiconductors is provided. The method is an improvement to the invention disclosed in OSIM patent application no. 95-01302 of 13.07.1995. Specifically, a method is provided for processing a semiconductor element having a cubic, rhombic or hexagonal crystalline structure and containing at least two stable isotopes, to enable the concentration of the various isotopes to be altered. The method comprises exposing the element to a temperature adjacent to its diffusion temperature, simultaneously applying to the element a 1 Amp, 4-30 KV electric current proportional to the ionisation energy expressed in Kcal/g mol, arranging the element being processed in a gaseous medium containing at least one inert gas to prevent oxidation of the element, and continuing the process for around 2 hours. An antimony (Sb) element with an isotope ratio of Sb 121 (P1,P2):Sb 123 (P3) = 1.70 is also provided.

Abstract translation: 提供了一种用于半导体领域的同位素分离方法。 该方法是对OSIM专利申请no。 95-01302，共13.07.1995。 具体地，提供了一种用于处理具有立方晶系，菱形或六边形晶体结构并且含有至少两个稳定同位素的半导体元件的方法，以使各种同位素的浓度能够被改变。 该方法包括将元件暴露于与其扩散温度相邻的温度，同时向元件施加与以Kcal / g mol表示的电离能成比例的1 Amp，4-30KV电流，将待处理的元件设置在气态 含有至少一种惰性气体的介质以防止元件的氧化，并持续该过程约2小时。 还提供同位素比Sb 121（P1，P2）：Sb 123（P3）= 1.70的锑（Sb）元素。

公开(公告)号：WO1997003235A1

公开(公告)日：1997-01-30

申请号：PCT/RO1995000008

申请日：1995-07-17

Applicant: S.C. TIBESTI S.A., ALBA IULIA ,  FANICA MIRCEA, Mihail ,  IVASCU, Marin ,  ISTRATE, Ion ,  MARUNTELU, Tudor, George ,  ILAS, Germina ,  ARGHIROPOL, Viorel ,  DUMITRU, Ion ,  IORDACHE, Virgil ,  GAVRILAS, Weber, Daniel

Inventor： S.C. TIBESTI S.A., ALBA IULIA

IPC: C30B30/00

CPC classification number: B01D59/08 ,  C30B7/00 ,  C30B11/00 ,  C30B13/00 ,  C30B15/00

Abstract: This invention refers to a method concerning the modification of the isotopic ratios of the isotopes introduced in the cubic and hexagonal crystalline nets, using the interaction of the isotopes with the cubic and hexagonal crystalline nets. The method, according to this invention provides the modification of the natural ratio of the isotopes, introducing them in the cubic and hexagonal crystalline nets. When a real definite isotopic blending is introduced in the process of the growth of the cubic and hexagonal monocristal, as a result of the variation of the physical and chemical parameters of the process of growth of the monocrystal, some modifications of the natural isotopic ratio up to 30 % from the initial value (depending on the type of the isotope) take place during a single growth of the monocrystal. This invention can be applied in: electronics, electro-technics, nuclear energetics, geology, biotechnologies, supraconductors.

Abstract translation: 本发明涉及使用同位素与立方晶和六方晶网的相互作用来改变导入立方晶和六方晶网的同位素比例的方法。 根据本发明的方法提供了同位素的天然比率的改变，将它们引入立方晶和六方晶网。 当在立方晶和六边形单晶的生长过程中引入真正的同位素共混时，由于单晶生长过程的物理和化学参数的变化，天然同位素比例的一些修改 至30％（取决于同位素的类型）发生在单晶生长期间。 本发明可应用于：电子，电子技术，核能，地质学，生物技术，超光栅。

公开(公告)号：RO82282B1

公开(公告)日：1984-03-30

申请号：RO10981083

申请日：1983-01-22

Applicant: FANICA MIRCEA MIHAIL ,  NEICU VERONICA ,  BLAGA AURELIAN

Inventor： FANICA MIRCEA MIHAIL ,  NEICU VERONICA ,  BLAGA AURELIAN

IPC: G21F1/00

Abstract: Inventia se refera la un procedeu pentru protectia la neuroni a dispozitivelor semiconductoare si a echipamentelor electronice. Procedeul, conform inventiei, prevede aplicarea unui strat protector realizat prin amestecul boran trimetilaminei sau a boran tertiar butilaminei, în functie de concentratiile de 10 la puterea B sau de H pe care le solicita fluxul de neutroni pentru care se realizeaza protectie si a compondului rasina poliesterica fenolica melaminica pe suprafata capsulei metalice a dispozitivului semiconductor sau pe folie metalica cu care se placheaza inferior carcasa echipamentului electronic, reticularea acestei pelicule la temperatura, în vederea diminuarii fluxului de neuroni prin reactiile din care au rezultat particule încarcate a caror actiune este anihilata prin proprietatile custii lui Faradaz constituita în cazul dispozitivelor semiconductoare din capsula si ambaza iar în cazul echipamentelor electronice din folia metalica.