公开(公告)号：WO2011124481A3

公开(公告)日：2012-05-03

申请号：PCT/EP2011054599

申请日：2011-03-25

Applicant: IBM ,  FERTIG MATTHIAS ,  PFLUEGER THOMAS ,  MORF THOMAS ,  MOLL NIKOLAJ

Inventor： FERTIG MATTHIAS ,  PFLUEGER THOMAS ,  MORF THOMAS ,  MOLL NIKOLAJ

IPC: H01L31/113 ,  G02B6/12 ,  G02B6/42 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/11

CPC classification number: H01L31/02327 ,  G02B6/124 ,  H01L27/14625 ,  H01L27/14681 ,  H01L31/02019 ,  H01L31/0232 ,  H01L31/1105 ,  H01L31/1136

Abstract: The photo detector (100, 300, 500, 600, 700, 900) comprises a photo transistor (102, 902). The photo transistor has a light sensitive region (112, 910) for controlling the transistor action of the photo transistor. The photo detector further comprises a dielectric layer (118). The dielectric layer is in contact with the photo transistor. The photo detector further comprises a grating pattern (114, 604, 914, 1010) in contact with the dielectric layer. The grating layer and the dielectric layer are adapted for focusing electromagnetic radiation in the light sensitive region.

Abstract translation: 光电检测器（100,300,500,600,700,900）包括光电晶体管（102,902）。 光电晶体管具有用于控制光电晶体管的晶体管作用的光敏区域（112,910）。 光电检测器还包括电介质层（118）。 电介质层与光电晶体管接触。 光电检测器还包括与电介质层接触的光栅图案（114,604,914,1010）。 光栅层和电介质层适于将电磁辐射聚焦在光敏区域中。

公开(公告)号：WO2009090123A3

公开(公告)日：2010-01-14

申请号：PCT/EP2009050094

申请日：2009-01-07

Applicant: IBM ,  FERTIG MATTHIAS ,  PFLUEGER THOMAS ,  MORF THOMAS E ,  MOLL NIKOLAJ

Inventor： FERTIG MATTHIAS ,  PFLUEGER THOMAS ,  MORF THOMAS E ,  MOLL NIKOLAJ

IPC: H01L25/04 ,  H01L27/146 ,  H01L31/04

CPC classification number: H01L31/0687 ,  H01L25/043 ,  H01L31/02167 ,  H01L31/043 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  H01L2924/00

Abstract: A multi- junction opto-electronic device comprising a stack of wavelength selective absorption layers is proposed. The absorption layers comprise each a first layer with a grating of a specific pitch defining the wavelength of the incident light to be absorbed within a subjacent second electrically active layer itself on a third electrically inactive layer. The second electrically active layer within the different absorption layers is in electrical connection with lateral contacts to extract the electrical charge carriers generated by the absorbed incident light within the active layer. The grating within the first layer of the absorption layers is defined by periodic stripes of specific width depending on the wavelength to be absorbed by the respective absorption layers. The period of the stripes alignment is defined by the pitch of the grating. Advantageously, ordinary silicon technology can be used.

Abstract translation: 提出了包括一叠波长选择吸收层的多结光电子器件。 吸收层包括每个具有特定间距的光栅的第一层，其限定入射光的波长，以在第三电无活性层上的相邻的第二电活性层本身内被吸收。 不同吸收层内的第二电活性层与横向触点电连接以提取由活性层内的吸收的入射光产生的电荷载流子。 吸收层的第一层内的光栅由具有特定宽度的周期性条纹限定，这取决于要被各个吸收层吸收的波长。 条纹对准的周期由光栅的间距限定。 有利地，可以使用普通的硅技术。

公开(公告)号：WO2011124481A2

公开(公告)日：2011-10-13

申请号：PCT/EP2011/054599

申请日：2011-03-25

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  FERTIG, Matthias ,  PFLUEGER, Thomas ,  MORF, Thomas ,  MOLL, Nikolaj

Inventor： FERTIG, Matthias ,  PFLUEGER, Thomas ,  MORF, Thomas ,  MOLL, Nikolaj

IPC: H01L31/0232

CPC classification number: H01L31/02327 ,  G02B6/124 ,  H01L27/14625 ,  H01L27/14681 ,  H01L31/02019 ,  H01L31/0232 ,  H01L31/1105 ,  H01L31/1136

Abstract: The photo detector (100, 300, 500, 600, 700, 900) comprises a photo transistor (102, 902). The photo transistor has a light sensitive region (112, 910) for controlling the transistor action of the photo transistor. The photo detector further comprises a dielectric layer (118). The dielectric layer is in contact with the photo transistor. The photo detector further comprises a grating pattern (114, 604, 914, 1010) in contact with the dielectric layer. The grating layer and the dielectric layer are adapted for focusing electromagnetic radiation in the light sensitive region.

Abstract translation: 光电检测器（100,300,500,600,700,900）包括光电晶体管（102,902）。 光电晶体管具有用于控制光电晶体管的晶体管作用的光敏区域（112,910）。 光电检测器还包括电介质层（118）。 电介质层与光电晶体管接触。 光电检测器还包括与电介质层接触的光栅图案（114,604,914,1010）。 光栅层和电介质层适于将电磁辐射聚焦在光敏区域中。

公开(公告)号：WO2009090123A2

公开(公告)日：2009-07-23

申请号：PCT/EP2009/050094

申请日：2009-01-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  FERTIG, Matthias ,  PFLUEGER, Thomas ,  MORF, Thomas E. ,  MOLL, Nikolaj

Inventor： FERTIG, Matthias ,  PFLUEGER, Thomas ,  MORF, Thomas E. ,  MOLL, Nikolaj

IPC: H01L31/0216

CPC classification number: H01L31/0687 ,  H01L25/043 ,  H01L31/02167 ,  H01L31/043 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  H01L2924/00

Abstract: A multi- junction opto-electronic device comprising a stack of wavelength selective absorption layers is proposed. The absorption layers comprise each a first layer with a grating of a specific pitch defining the wavelength of the incident light to be absorbed within a subjacent second electrically active layer itself on a third electrically inactive layer. The second electrically active layer within the different absorption layers is in electrical connection with lateral contacts to extract the electrical charge carriers generated by the absorbed incident light within the active layer. The grating within the first layer of the absorption layers is defined by periodic stripes of specific width depending on the wavelength to be absorbed by the respective absorption layers. The period of the stripes alignment is defined by the pitch of the grating. Advantageously, ordinary silicon technology can be used.

Abstract translation: 提出了包括一叠波长选择吸收层的多结光电子器件。 吸收层包括每个具有特定间距的光栅的第一层，其限定入射光的波长，以在第三电无活性层上的相邻的第二电活性层本身内被吸收。 不同吸收层内的第二电活性层与横向触点电连接以提取由活性层内的吸收的入射光产生的电荷载流子。 吸收层的第一层内的光栅由具有特定宽度的周期性条纹限定，这取决于要被各个吸收层吸收的波长。 条纹对准的周期由光栅的间距限定。 有利地，可以使用普通的硅技术。