公开(公告)号：WO2011055347A3

公开(公告)日：2011-06-30

申请号：PCT/IB2010055063

申请日：2010-11-08

Applicant: IBM ,  LAMPRECHT TOBIAS P ,  MORF THOMAS E ,  WEISS JONAS R

Inventor： LAMPRECHT TOBIAS P ,  MORF THOMAS E ,  WEISS JONAS R

IPC: G02B26/02 ,  B29C33/00 ,  B29D11/00 ,  G02B3/00 ,  G02B26/08 ,  G02F1/01 ,  G09F9/37

CPC classification number: G09F9/372 ,  B29C33/38 ,  B29C33/42 ,  B29C35/02 ,  B29C35/0805 ,  B29C37/0053 ,  B29C37/0067 ,  B29C2035/0827 ,  B29D11/00557 ,  B82Y25/00 ,  G02B3/0031 ,  G02B26/004 ,  G02B26/0825 ,  Y10T428/24479

Abstract: The invention is directed to a device (10, 10a - 10d) comprising: a set of on- chip circuits (110 - 160, 170, 180), each of the circuits configured to generate a magnetic field (300) perpendicular to a planar surface of the set when energized; a ferrofluidic layer (40) interfaced to the planar surface; and a logic circuit (50) configured to selectively energize (200, 200a) one ore more circuits of the set such as to generate a magnetic field at the energized circuits and a deformation (41, 44, 45) of the ferrofluidic layer in response thereto and to modulate optical beams (IR1, IR2) directed to the ferrofluid layer. Preferably, an additional liquid layer (60) is interfaced to the ferrofluid layer, opposite to the on-chip circuits, which is not miscible with the ferrofluid layer. The invention can be applied to micro- display/projection devices, programmable optical reflecting lenses, or to micro- molding applications for surface replication.

Abstract translation: 本发明涉及一种装置（10,10a-10d），包括：一组片上电路（110-160,170,180），每个电路被配置为产生垂直于平面的磁场（300） 通电时组件表面; 与所述平坦表面接合的铁磁流体层（40） 和逻辑电路（50），其被配置为选择性地激励（200,200a）所述组中的一个或多个电路，以响应于所述激励电路和所述铁磁性流体层的变形（41,44,45）产生磁场 并且调制指向铁磁流体层的光束（IR1，IR2）。 优选地，附加的液体层（60）与铁磁流体层相接，与片上电路相对，其不与铁磁流体层混溶。 本发明可以应用于微型显示/投影设备，可编程光学反射透镜或用于表面复制的微成型应用。

公开(公告)号：WO2009090123A2

公开(公告)日：2009-07-23

申请号：PCT/EP2009/050094

申请日：2009-01-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  FERTIG, Matthias ,  PFLUEGER, Thomas ,  MORF, Thomas E. ,  MOLL, Nikolaj

Inventor： FERTIG, Matthias ,  PFLUEGER, Thomas ,  MORF, Thomas E. ,  MOLL, Nikolaj

IPC: H01L31/0216

CPC classification number: H01L31/0687 ,  H01L25/043 ,  H01L31/02167 ,  H01L31/043 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  H01L2924/00

Abstract: A multi- junction opto-electronic device comprising a stack of wavelength selective absorption layers is proposed. The absorption layers comprise each a first layer with a grating of a specific pitch defining the wavelength of the incident light to be absorbed within a subjacent second electrically active layer itself on a third electrically inactive layer. The second electrically active layer within the different absorption layers is in electrical connection with lateral contacts to extract the electrical charge carriers generated by the absorbed incident light within the active layer. The grating within the first layer of the absorption layers is defined by periodic stripes of specific width depending on the wavelength to be absorbed by the respective absorption layers. The period of the stripes alignment is defined by the pitch of the grating. Advantageously, ordinary silicon technology can be used.

Abstract translation: 提出了包括一叠波长选择吸收层的多结光电子器件。 吸收层包括每个具有特定间距的光栅的第一层，其限定入射光的波长，以在第三电无活性层上的相邻的第二电活性层本身内被吸收。 不同吸收层内的第二电活性层与横向触点电连接以提取由活性层内的吸收的入射光产生的电荷载流子。 吸收层的第一层内的光栅由具有特定宽度的周期性条纹限定，这取决于要被各个吸收层吸收的波长。 条纹对准的周期由光栅的间距限定。 有利地，可以使用普通的硅技术。

公开(公告)号：WO2011055347A2

公开(公告)日：2011-05-12

申请号：PCT/IB2010/055063

申请日：2010-11-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  LAMPRECHT, Tobias, P. ,  MORF, Thomas, E. ,  WEISS, Jonas, R.

Inventor： LAMPRECHT, Tobias, P. ,  MORF, Thomas, E. ,  WEISS, Jonas, R.

IPC: G02B26/02

CPC classification number: G09F9/372 ,  B29C33/38 ,  B29C33/42 ,  B29C35/02 ,  B29C35/0805 ,  B29C37/0053 ,  B29C37/0067 ,  B29C2035/0827 ,  B29D11/00557 ,  B82Y25/00 ,  G02B3/0031 ,  G02B26/004 ,  G02B26/0825 ,  Y10T428/24479

Abstract: The invention is directed to a device (10, 10a - 10d) comprising: a set of on- chip circuits (110 - 160, 170, 180), each of the circuits configured to generate a magnetic field (300) perpendicular to a planar surface of the set when energized; a ferrofluidic layer (40) interfaced to the planar surface; and a logic circuit (50) configured to selectively energize (200, 200a) one ore more circuits of the set such as to generate a magnetic field at the energized circuits and a deformation (41, 44, 45) of the ferrofluidic layer in response thereto and to modulate optical beams (IR1, IR2) directed to the ferrofluid layer. Preferably, an additional liquid layer (60) is interfaced to the ferrofluid layer, opposite to the on-chip circuits, which is not miscible with the ferrofluid layer. The invention can be applied to micro- display/projection devices, programmable optical reflecting lenses, or to micro- molding applications for surface replication.

Abstract translation: 本发明涉及一种包括：一组片上电路（110-160,170,180）的设备（10,10a-10d），每个电路被配置为产生垂直于平面的电场（300）的磁场（300） 电源表面; 与所述平面连接的铁磁流体层（40） 以及逻辑电路（50），其被配置为选择性地（200,200a）激励所述组的一个或多个电路，以便在所述通电电路处产生磁场，并响应于所述铁磁流体层的变形（41,44,45） 并调制指向铁磁流体层的光束（IR1，IR2）。 优选地，另外的液体层（60）与不与铁磁流体层混合的片上电路相对的铁磁流体层相接合。 本发明可以应用于微型显示/投影设备，可编程光学反射镜，或用于表面复制的微型成型应用。

公开(公告)号：WO2009090123A3

公开(公告)日：2010-01-14

申请号：PCT/EP2009050094

申请日：2009-01-07

Applicant: IBM ,  FERTIG MATTHIAS ,  PFLUEGER THOMAS ,  MORF THOMAS E ,  MOLL NIKOLAJ

Inventor： FERTIG MATTHIAS ,  PFLUEGER THOMAS ,  MORF THOMAS E ,  MOLL NIKOLAJ

IPC: H01L25/04 ,  H01L27/146 ,  H01L31/04

CPC classification number: H01L31/0687 ,  H01L25/043 ,  H01L31/02167 ,  H01L31/043 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  H01L2924/00

Abstract: A multi- junction opto-electronic device comprising a stack of wavelength selective absorption layers is proposed. The absorption layers comprise each a first layer with a grating of a specific pitch defining the wavelength of the incident light to be absorbed within a subjacent second electrically active layer itself on a third electrically inactive layer. The second electrically active layer within the different absorption layers is in electrical connection with lateral contacts to extract the electrical charge carriers generated by the absorbed incident light within the active layer. The grating within the first layer of the absorption layers is defined by periodic stripes of specific width depending on the wavelength to be absorbed by the respective absorption layers. The period of the stripes alignment is defined by the pitch of the grating. Advantageously, ordinary silicon technology can be used.

Abstract translation: 提出了包括一叠波长选择吸收层的多结光电子器件。 吸收层包括每个具有特定间距的光栅的第一层，其限定入射光的波长，以在第三电无活性层上的相邻的第二电活性层本身内被吸收。 不同吸收层内的第二电活性层与横向触点电连接以提取由活性层内的吸收的入射光产生的电荷载流子。 吸收层的第一层内的光栅由具有特定宽度的周期性条纹限定，这取决于要被各个吸收层吸收的波长。 条纹对准的周期由光栅的间距限定。 有利地，可以使用普通的硅技术。