公开(公告)号：WO2012130933A1

公开(公告)日：2012-10-04

申请号：PCT/EP2012055620

申请日：2012-03-29

Applicant: IMEC ,  UNIV LEUVEN KATH ,  VINCENT BENJAMIN ,  GENCARELLI FEDERICA ,  LOO ROGER ,  CAYMAX MATTY

Inventor： VINCENT BENJAMIN ,  GENCARELLI FEDERICA ,  LOO ROGER ,  CAYMAX MATTY

IPC: H01L21/02 ,  H01L21/205

CPC classification number: H01L21/02532 ,  H01L21/02535 ,  H01L21/0262

Abstract: A method is provided for depositing a monocrystalline Sn-containing semiconductor material on a substrate, comprising providing a semiconductor material precursor, a Sn precursor and a carrier gas in a chemical vapor deposition (CVD) reactor, and epitaxially growing the Sn- containing semiconductor material on the substrate, wherein the Sn precursor comprises tin tetrachloride (SnC14). SnC14 is used as Sn-precursor for chemical vapor deposition of Sn comprising semiconductor materials.

Abstract translation: 提供了一种用于在衬底上沉积单晶含Sn半导体材料的方法，包括在化学气相沉积（CVD）反应器中提供半导体材料前体，Sn前体和载气，并外延生长含Sn半导体材料 其中Sn前体包括四氯化锡（SnC14）。 SnC14用作用于Sn的半导体材料的化学气相沉积的Sn前体。

公开(公告)号：WO2012130933A9

公开(公告)日：2012-10-04

申请号：PCT/EP2012/055620

申请日：2012-03-29

Applicant: IMEC ,  KATHOLIEKE UNIVERSITEIT LEUVEN ,  VINCENT, Benjamin ,  GENCARELLI, Federica ,  LOO, Roger ,  CAYMAX, Matty

Inventor： VINCENT, Benjamin ,  GENCARELLI, Federica ,  LOO, Roger ,  CAYMAX, Matty

IPC: H01L21/02 ,  H01L21/205

Abstract: A method is provided for depositing a monocrystalline Sn-containing semiconductor material on a substrate, comprising providing a semiconductor material precursor, a Sn precursor and a carrier gas in a chemical vapor deposition (CVD) reactor, and epitaxially growing the Sn- containing semiconductor material on the substrate, wherein the Sn precursor comprises tin tetrachloride (SnC14). SnC1 4 is used as Sn-precursor for chemical vapor deposition of Sn comprising semiconductor materials.