公开(公告)号：WO2005048285A8

公开(公告)日：2005-08-11

申请号：PCT/JP2004016519

申请日：2004-11-08

Applicant: NEOMAX MATERIALS CO LTD ,  SAITO TOMOHIRO ,  MIURA HIROSHI ,  ISHIO MASAAKI ,  HASEGAWA TSUYOSHI

Inventor： SAITO TOMOHIRO ,  MIURA HIROSHI ,  ISHIO MASAAKI ,  HASEGAWA TSUYOSHI

IPC: H01J1/02 ,  H01J9/02 ,  H01J61/04 ,  H01J61/067

CPC classification number: H01J1/02 ,  H01J61/04 ,  H01J61/0675 ,  Y10T428/12201 ,  Y10T428/12292 ,  Y10T428/12493 ,  Y10T428/12937 ,  Y10T428/12944

Abstract: Disclosed is a discharge electrode material which enables to form a discharge electrode having a life and discharge characteristics equivalent to those of a discharge electrode which is mainly composed of Nb. Furthermore, the discharge electrode material is excellent in weldability to a supporting conductor and enables to reduce the material cost. The cladding material for discharge electrodes comprises a base layer (1) composed of pure Ni, an Ni-base alloy mainly containing Ni or a stainless steel, and a surface layer (2) whichi is joined to the base layer (1) and composed of pure Nb or an Nb-base alloy mainly containing Nb. An intermediate layer composed of a stainless steel is preferably arranged between the base layer (1) and the surface layer (2). The base layer (1) may be formed as a band plate and the surface layer (2) may be superposed only on the central portion of the base layer (1).

Abstract translation: 公开了一种放电电极材料，其能够形成具有与主要由Nb组成的放电电极相同的寿命和放电特性的放电电极。 此外，放电电极材料与支撑导体的焊接性优异，并且能够降低材料成本。 用于放电电极的包层材料包括由纯Ni构成的基底层（1），主要含有Ni或不锈钢的Ni基合金以及与基底层（1）接合的表面层（2） 的纯Nb或主要含有Nb的Nb基合金。 由不锈钢构成的中间层优选配置在基底层（1）和表面层（2）之间。 基层（1）可以形成为带板，并且表层（2）可以仅叠加在基层（1）的中心部分上。

公开(公告)号：WO0052782A8

公开(公告)日：2000-12-07

申请号：PCT/JP9900933

申请日：1999-02-26

Applicant: FUJITSU LTD ,  KAI MANABU ,  YAMANAKA KAZUNORI ,  HASEGAWA TSUYOSHI ,  MANIWA TORU

Inventor： KAI MANABU ,  YAMANAKA KAZUNORI ,  HASEGAWA TSUYOSHI ,  MANIWA TORU

IPC: H01B1/00 ,  H01P1/205 ,  H01P7/04 ,  H01P5/08

CPC classification number: H01P1/202 ,  H01P1/205 ,  H01P1/30 ,  H01P7/04 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

Abstract: A superconducting filter (1) comprises a columnar resonant member (23), one end of which is fixed to an inner wall (22) of a filter case (21) in such a manner that it is not in contact with connectors (27a, 27b) provided for connection with signal input/output cables (5a, 5b). This filter exhibits a stable filter characteristic because of stable superconduction created by extreme limitation of the entrance of heat. Because of its superior power performance, the power loss can be minimized even if the number of filter stages is increased to achieve sharp cutoff frequency discrimination.

Abstract translation: 超导过滤器（1）包括柱状共振构件（23），其一端固定到过滤器壳体（21）的内壁（22），使得其不与连接器（27a， 27b），用于与信号输入/输出电缆（5a，5b）连接。 该过滤器由于热入口极限而产生的稳定的超导体，表现出稳定的过​​滤特性。 由于其优异的功率性能，即使增加滤波器级的数量以实现尖锐的截止频率鉴别，功率损耗可以最小化。

公开(公告)号：WO1994023445A1

公开(公告)日：1994-10-13

申请号：PCT/JP1994000561

申请日：1994-04-05

Applicant: HITACHI, LTD. ,  HASEGAWA, Tsuyoshi ,  HOSOKI, Shigeyuki ,  KOHNO, Makiko ,  ICHIKAWA, Masakazu ,  NAKAHARA, Hitoshi ,  USAGAW, Toshiyuki

Inventor： HITACHI, LTD.

IPC: H01L21/205

CPC classification number: B82Y30/00 ,  B82Y40/00 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  Y10S117/913 ,  Y10S977/855

Abstract: A structural body is formed on a substrate in the following manner. A first-element layer of one or less atomic layer is formed by arranging atoms of a first element of gold, silver, copper, nickel, palladium, platinum or a group IV element in the most stable positions in terms of energy by utilization of the irregular pattern the irregularity of which is the order of one atom and which exists on a crystalline substrate of a semiconductor such as silicon, selenium or other substance, and then, atoms of a second element of at least one kind out of group III elements, group IV elements, and group V elements are deposited by vapor deposition, sputtering, or the like only on a part of the surface of the substrate where the layer of one or less atomic layer is formed.

Abstract translation: 以下述方式在基板上形成结构体。 一个或多个原子层的第一元素层通过使用金，银，铜，镍，钯，铂或IV族元素的第一元素在能量最稳定的位置上排列而形成 不规则图案的不规则性是一个原子的数量级并且存在于诸如硅，硒或其它物质的半导体的晶体衬底上，然后是III族元素中至少一种的第二元素的原子， IV族元素和V族元素仅通过气相沉积，溅射等方式沉积在形成有一个或多个原子层的基底的表面的一部分上。