公开(公告)号：WO03085709A9

公开(公告)日：2005-02-24

申请号：PCT/JP0304615

申请日：2003-04-11

Applicant: HOYA CORP ,  ISHIBASHI SHINICHI ,  SHOKI TSUTOMU ,  HOSOYA MORIO ,  SHIOTA YUKI ,  KUREISHI MITSUHIRO

Inventor： ISHIBASHI SHINICHI ,  SHOKI TSUTOMU ,  HOSOYA MORIO ,  SHIOTA YUKI ,  KUREISHI MITSUHIRO

IPC: G03F1/52 ,  G03F1/00 ,  G03F1/50 ,  H01L21/027 ,  G03F1/16

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/58 ,  G03F1/74 ,  Y10T428/31616

Abstract: A reflection type mask blank comprising a substrate (11), and, sequentially formed thereon, a reflection layer (12) for reflecting an exposure light in a short-wave region including an extreme ultraviolet region and an absorber layer (16) for absorbing an exposure light. The absorber layer (16) has a structure of at least two layers consisting of as a lower layer an exposure light absorbing layer (14) composed of an absorber of an exposure light in a short-wave region including an extreme ultraviolet region, and as an upper layer a low-reflectance layer (15) composed of an absorber of an inspection light used for mask pattern inspection. The upper layer consists of a material containing tantalum (Ta), boron (B) and nitrogen (N), B content being 5 at%-30 at%, a composition ratio between Ta and N (Ta:N) being 8:1 to 2:7. Alternatively, the reflection type mask blank may comprise a substrate, and, sequentially formed thereon, a multi-layer reflection film and an absorber layer, wherein the absorber layer consists of a material containing tantalum (Ta), boron (B) and nitrogen (N), B content being 5 at%-25 at%, a composition ratio between Ta and N (Ta:N) being 8:1 to 2:7.

Abstract translation: 一种反射型掩模坯料，包括基板（11），并且依次形成有用于反射包括极紫外区域的短波区域中的曝光用光的反射层（12）和吸收层 曝光灯 吸收层（16）具有由下层组成的至少两层的结构，曝光光吸收层（14）由包括极紫外区域的短波区域中的曝光光的吸收体构成，并且 上层，由用于掩模图案检查的检查光的吸收体构成的低反射率层（15）。 上层由含钽（Ta），硼（B）和氮（N）的材料组成，B含量为5原子％-30原子％，Ta和N（Ta：N）的组成比为8：1 至2：7。 或者，反射型掩模坯料可以包括基底，并且依次形成多层反射膜和吸收层，其中吸收层由含有钽（Ta），硼（B）和氮（ N），B含量为5原子％-25原子％，Ta与N（Ta：N）的组成比为8：1〜2：7。