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    COLOR CENTER-CONTAINING MAGNESIUM OXIDE AND THIN FILM OF SAME, WAVELENGTH-VARIABLE LASER MEDIUM, LASER DEVICE, AND LIGHT SOURCE DEVICE
    3.
    发明申请
    COLOR CENTER-CONTAINING MAGNESIUM OXIDE AND THIN FILM OF SAME, WAVELENGTH-VARIABLE LASER MEDIUM, LASER DEVICE, AND LIGHT SOURCE DEVICE 审中-公开
    含颜料中心氧化镁和薄膜，波长可变激光介质，激光器件和光源设备

    公开(公告)号：WO2010024447A2

    公开(公告)日：2010-03-04

    申请号：PCT/JP2009065252

    申请日：2009-09-01

    Applicant: NEW IND RES ORGANIZATION ,  UCHINO TAKASHI ,  OKUTSU DAISUKE

    Inventor： UCHINO TAKASHI ,  OKUTSU DAISUKE

    IPC: H01S3/16 ,  C01F5/04 ,  C09K11/55 ,  H01J29/20 ,  H01J31/12

    CPC classification number: H01J31/12 ,  C01F5/04 ,  C09K11/636 ,  C30B1/10 ,  C30B29/16 ,  H01S3/163 ,  H01S3/1681 ,  H01S3/1685 ,  H01S3/30

    Abstract: Provided is a color center laser medium that is a wide-spectrum laser medium with a laser oscillation wavelength band that ranges from a near-ultraviolet region, with a shorter wavelength than that of a conventional laser medium utilizing color centers, to the visible region, and that is capable of operating at room temperature without requiring a laser cavity and liquid nitrogen cooling. The color center-containing magnesium oxide is created by means of a solid-phase reaction between silicon monoxide (SiO), boron trioxide (B2O3), or ferric oxide (Fe2O3) and metallic magnesium. The wavelength-variable laser medium then utilizes color centers (color center) in the magnesium oxide created by the solid-phase reaction. More specifically, silicon monoxide and metallic magnesium are heated for several hours in an argon atmosphere at a prescribed temperature in order to obtain a magnesium oxide sublimate. Laser oscillation occurs by the sublimate being directly irradiated with an excitation pulsed laser beam using a pump energy higher than a prescribed energy that is the laser oscillation threshold value.

    Abstract translation: 提供了一种彩色中心激光介质，其是具有激光振荡波长带的宽频激光介质，其波长比使用彩色中心的传统激光介质的波长短的近紫外区域到可见光区域， 并且能够在室温下操作而不需要激光腔和液氮冷却。 含有着色中心的氧化镁通过一氧化硅（SiO），三氧化硼（B2O3）或氧化铁（Fe2O3）和金属镁之间的固相反应产生。 然后，波长可变激光介质利用由固相反应产生的氧化镁中的色心（色心）。 更具体地说，一氧化硅和金属镁在规定温度下在氩气气氛中加热数小时，以获得氧化镁升华。 使用高于作为激光振荡阈值的规定能量的泵浦能量，通过激发脉冲激光束直接照射的升华发生激光振荡。

    TRANSPARENT SILICA GLASS LUMINESCENT MATERIAL AND PROCESS FOR PRODUCING THE SAME
    4.
    发明申请
    TRANSPARENT SILICA GLASS LUMINESCENT MATERIAL AND PROCESS FOR PRODUCING THE SAME 审中-公开
    透明二氧化硅玻璃发光材料及其制造方法

    公开(公告)号：WO2005021449A3

    公开(公告)日：2005-04-21

    申请号：PCT/JP2004012373

    申请日：2004-08-27

    Applicant: NEW IND RES ORGANIZATION ,  UCHINO TAKASHI ,  YAMADA TOMOKO

    Inventor： UCHINO TAKASHI ,  YAMADA TOMOKO

    IPC: C03B20060101 ,  C03B19/06 ,  C03B20/00 ,  C03C12/00 ,  C09K11/00 ,  C09K11/08 ,  C09K11/59

    CPC classification number: C03C12/00 ,  C03B19/06 ,  C03B19/066 ,  C03B20/00 ,  C03B2201/03 ,  C03B2201/04

    Abstract: A luminescent element of next-generation optical device that by photoluminescence (PL), exhibits a large half-value width of emission spectrum in the wavelength region of visible light so as to realize broad light emitting characteristics and enables white light emission. Silica glass is produced through a firing operation for firing a product of pressure molding of silica microparticles such as fumed silica, wherein the firing temperature is regulated within a range not exceeding 1000°C so as to satisfactorily carry out dehydration condensation reaction with respect to OH groups of silica microparticles to thereby attain clearing and wherein amorphous defects having occurred during the reaction are retained without being reduced. This silica glass is used as a phosphor.

    Abstract translation: 下一代光学器件的发光元件通过光致发光（PL）在可见光的波长区域中显示发射光谱的大半值宽度，从而实现宽的发光特性并使白光发射成为可能。 二氧化硅玻璃是通过焙烧煅烧二氧化硅微粒如煅制二氧化硅的产物的煅烧操作来生产的，其中煅烧温度被控制在不超过1000℃的范围内，以便令人满意地对OH进行脱水缩合反应 从而实现二氧化硅微粒的清除，并且其中在反应过程中发生的无定形缺陷未被还原而保留。 该石英玻璃被用作荧光体。

    IMPROVEMENTS IN AND RELATING TO ELECTROSLAG WELDING
    5.
    发明申请
    IMPROVEMENTS IN AND RELATING TO ELECTROSLAG WELDING 审中-公开
    电焊机焊接中的改进和相关

    公开(公告)号：WO1981000531A1

    公开(公告)日：1981-03-05

    申请号：PCT/AU1980000048

    申请日：1980-08-22

    Applicant: COMMONWEALTH SCIENTIFIC & IND RES ORGANIZATION ,  FRENCH I ,  KIMPTON G

    Inventor： COMMONWEALTH SCIENTIFIC & IND RES ORGANIZATION

    IPC: B23K25/00

    CPC classification number: B23K25/00

    Abstract: A process for electroslag welding permitting utilization of a gap width of from 3 to 8 mm between members (16, 18) to be welded, in which there is used a sheet electrode (28) having a width of the order of the width of the members (16, 18) at the gap; the electrode (28) having a central layer (33) of metal and, on each of the major surfaces of the metal layer (33), a layer (34) of slag forming flux.

    Abstract translation: 一种用于电渣焊接的方法，其允许使用待焊接的部件（16,18）之间的间隙宽度为3至8mm，其中使用具有宽度为宽度的宽度的片状电极（28） 成员（16,18）处于差距; 所述电极（28）具有金属的中心层（33），并且在所述金属层（33）的每个主表面上形成熔渣形成焊剂的层（34）。

    SEMICONDUCTOR MEMORY AND PROGRAM
    6.
    发明申请
    SEMICONDUCTOR MEMORY AND PROGRAM 审中-公开
    半导体存储器和程序

    公开(公告)号：WO2009088020A3

    公开(公告)日：2009-09-11

    申请号：PCT/JP2009050086

    申请日：2009-01-07

    Applicant: NEW IND RES ORGANIZATION ,  YOSHIMOTO MASAHIKO ,  KAWAGUCHI HIROSHI ,  FUJIWARA HIDEHIRO ,  OKUMURA SHUNSUKE

    Inventor： YOSHIMOTO MASAHIKO ,  KAWAGUCHI HIROSHI ,  FUJIWARA HIDEHIRO ,  OKUMURA SHUNSUKE

    IPC: G11C11/41 ,  G11C11/401 ,  G11C11/412

    CPC classification number: G11C11/4125 ,  G11C5/005

    Abstract: A memory wherein the bit reliability of the memory cells can be dynamically varied depending on the application or the memory status, the operation stability is ensured, and thereby a low power consumption and a high reliability are realized. Either a mode (a 1-bit/1-cell mode) in which one bit is composed of one memory cell or a mode (a 1-bit/n-cell mode) in which one bit is composed of n (n is two or more) connected memory cells is dynamically selected. When the 1-bit/n-cell mode is selected, the read/write stability of one bit is enhanced, the cell current during read is increased (read is speeded up), and a bit error, if occurs, is self-corrected. Especially, a pair of CMOS transistors and a control line for performing control so as to permit the CMOS transistors to conduct are added between the data holding nodes of n adjacent memory cells. With this, the word line (WL) is controlled, and thereby the operation stability is further improved.

    Abstract translation: 可以根据应用或存储器状态来动态地改变存储器单元的位可靠性的存储器，从而确保操作稳定性，从而实现低功耗和高可靠性。 一个位由一个存储器单元组成的模式（1位/ 1单元模式）或其中一个位由n组成的模式（1位/ n单元模式） 或更多）连接的存储器单元被动态地选择。 当选择1位/ n单元模式时，增加了一位的读/写稳定性，读取期间的单元电流增加（读取速度加快），如果出现位错误，则自校正 。 特别地，在n个相邻的存储单元的数据保持节点之间添加一对CMOS晶体管和用于执行控制以允许CMOS晶体管导通的控制线。 由此，对字线（WL）进行控制，从而进一步提高操作稳定性。

    PROCESS FOR COMPOSITE POLYMER BEADS
    8.
    发明申请
    PROCESS FOR COMPOSITE POLYMER BEADS 审中-公开
    复合聚合物珠的工艺

    公开(公告)号：WO1980002687A1

    公开(公告)日：1980-12-11

    申请号：PCT/AU1980000018

    申请日：1980-06-02

    Applicant: ICI AUSTRALIA LTD ,  COMMONWEALTH SCIENTIFIC IND RES ORGANIZATION ,  LUBBOCK F ,  ELDRIDGE R ,  MOK C

    Inventor： ICI AUSTRALIA LTD ,  COMMONWEALTH SCIENTIFIC IND RES ORGANIZATION

    IPC: C08F02/44

    CPC classification number: C08F2/44

    Abstract: A process of incorporating non-polymeric particulate matter such as magnetic materials, pigments and minerals, into a cross-linked styrene-base polymeric matrix, which process comprises dispersing the non-polymeric particles with a polymeric dispersant in a medium containing one or more vinyl monomers and a crosslinking agent, and adding a polymerization initiator. Typical polymeric dispersants are copolymers, styrenes and tertiary-nitrogen-containing vinyl monomers. Non-polymeric particulate matter incorporated into polymeric beads by this process is resistant to chemical attack and the beads may be used to prepare composite adsorbents or ion exchange resins.

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