INTEGRATED MEMS TRANSDUCER AND CIRCUITRY
    1.
    发明申请
    INTEGRATED MEMS TRANSDUCER AND CIRCUITRY 审中-公开
    集成MEMS传感器和电路

    公开(公告)号:WO2010092399A2

    公开(公告)日:2010-08-19

    申请号:PCT/GB2010/050233

    申请日:2010-02-12

    Abstract: The invention relates to the integration of MEMS transducers with electronic circuitry on the same substrate. A method of fabricating and integrated MEMS transducer and circuitry is disclosed which is fully compatible with standard CMOS processing and requires no post processing. The transducer is formed by forming at least one membrane layer, a plurality of back-plate layer sand at least one sacrificial structure such that removal of the sacrificial structure leaves the membrane free to move relative to the fixed back-plate. The method also forms circuit layers on the substrate to form the circuit components and involves sharing layers of material such that at least some of the layers which form the back-plate of the transducer also forms one of the circuit layer sand such layer include at least one metal layer and at least one dielectric layer. The method thus reduces the number of processing steps required compared with sequential fabrication of the circuitry and the transducer. Integrated transducer and electronics devices are also taught.

    Abstract translation: 本发明涉及MEMS换能器与同一基板上的电子电路的集成。 公开了一种制造和集成MEMS换能器和电路的方法,其与标准CMOS处理完全兼容,并且不需要后处理。 换能器通过形成至少一个膜层,多个背板层砂形成至少一个牺牲结构而形成,使得去除牺牲结构离开膜相对于固定背板自由移动。 该方法还在衬底上形成电路层以形成电路部件并涉及共享材料层,使得形成换能器的背板的至少一些层也形成电路层砂之一,至少包括 一个金属层和至少一个电介质层。 该方法因此减少了与电路和换能器的顺序制造相比所需的处理步骤的数量。 还教授了集成的传感器和电子设备。

    INTEGRATED MEMS TRANSDUCER AND CIRCUITRY
    2.
    发明申请
    INTEGRATED MEMS TRANSDUCER AND CIRCUITRY 审中-公开
    集成MEMS传感器和电路

    公开(公告)号:WO2010092399A3

    公开(公告)日:2011-05-05

    申请号:PCT/GB2010050233

    申请日:2010-02-12

    Abstract: The invention relates to the integration of MEMS transducers with electronic circuitry on the same substrate. A method of fabricating and integrated MEMS transducer and circuitry is disclosed which is fully compatible with standard CMOS processing and requires no post processing. The transducer is formed by forming at least one membrane layer, a plurality of back-plate layer sand at least one sacrificial structure such that removal of the sacrificial structure leaves the membrane free to move relative to the fixed back-plate. The method also forms circuit layers on the substrate to form the circuit components and involves sharing layers of material such that at least some of the layers which form the back-plate of the transducer also forms one of the circuit layer sand such layer include at least one metal layer and at least one dielectric layer. The method thus reduces the number of processing steps required compared with sequential fabrication of the circuitry and the transducer. Integrated transducer and electronics devices are also taught.

    Abstract translation: 本发明涉及MEMS换能器与同一基板上的电子电路的集成。 公开了一种制造和集成MEMS换能器和电路的方法,其与标准CMOS处理完全兼容,并且不需要后处理。 换能器通过形成至少一个膜层,多个背板层砂形成至少一个牺牲结构而形成,使得去除牺牲结构离开膜相对于固定背板自由移动。 该方法还在衬底上形成电路层以形成电路部件并涉及共享材料层,使得形成换能器的背板的至少一些层也形成电路层砂之一,至少包括 一个金属层和至少一个电介质层。 该方法因此减少了与电路和换能器的顺序制造相比所需的处理步骤的数量。 还教授了集成的传感器和电子设备。

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