公开(公告)号：WO2011108732A3

公开(公告)日：2012-01-12

申请号：PCT/JP2011055153

申请日：2011-02-28

Applicant: CANON KK ,  UNIV KYOTO ,  KUBOTA MAKOTO ,  TAKEDA KENICHI ,  HAYASHI JUMPEI ,  SHIMADA MIKIO ,  SHIMAKAWA YUICHI ,  AZUMA MASAKI ,  NAKAMURA YOSHITAKA ,  KAWAI MASANORI

Inventor： KUBOTA MAKOTO ,  TAKEDA KENICHI ,  HAYASHI JUMPEI ,  SHIMADA MIKIO ,  SHIMAKAWA YUICHI ,  AZUMA MASAKI ,  NAKAMURA YOSHITAKA ,  KAWAI MASANORI

IPC: H01L41/18 ,  B41J2/045 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/16 ,  C04B35/00 ,  H01L41/08 ,  H01L41/09 ,  H01L41/187 ,  H01L41/29 ,  H01L41/316 ,  H01L41/317 ,  H01L41/39 ,  H02N2/00

CPC classification number: H01L41/1878 ,  B41J2/14233 ,  H01L41/0478 ,  H01L41/081 ,  H01L41/0973 ,  H01L41/318 ,  H02N2/106 ,  H02N2/163 ,  Y10T29/42

Abstract: Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15=c/a=1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.

Abstract translation: 提供一种压电薄膜，其具有混合菱方结构和四边形结构的压电性，以及使用压电薄膜的压电元件。 压电薄膜包括钙钛矿型金属氧化物，其中钙钛矿型金属氧化物是至少具有菱方结构和四方结构的混晶系，以及a轴晶格参数与c轴晶格之比 四方结构的参数满足1.15 = c / a = 1.30。 压电元件包括​​在基板上：上述压电薄膜; 以及设置成与压电薄膜接触的一对电极。

公开(公告)号：WO2011108732A2

公开(公告)日：2011-09-09

申请号：PCT/JP2011055153

申请日：2011-02-28

Applicant: CANON KK ,  UNIV KYOTO ,  KUBOTA MAKOTO ,  TAKEDA KENICHI ,  HAYASHI JUMPEI ,  SHIMADA MIKIO ,  SHIMAKAWA YUICHI ,  AZUMA MASAKI ,  NAKAMURA YOSHITAKA ,  KAWAI MASANORI

Inventor： KUBOTA MAKOTO ,  TAKEDA KENICHI ,  HAYASHI JUMPEI ,  SHIMADA MIKIO ,  SHIMAKAWA YUICHI ,  AZUMA MASAKI ,  NAKAMURA YOSHITAKA ,  KAWAI MASANORI

IPC: H01L41/18 ,  B41J2/045 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/16 ,  C04B35/00 ,  H01L41/08 ,  H01L41/09 ,  H01L41/187 ,  H01L41/29 ,  H01L41/316 ,  H01L41/317 ,  H01L41/39 ,  H02N2/00

CPC classification number: H01L41/1878 ,  B41J2/14233 ,  H01L41/0478 ,  H01L41/081 ,  H01L41/0973 ,  H01L41/318 ,  H02N2/106 ,  H02N2/163 ,  Y10T29/42

Abstract: Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15=c/a=1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.

Abstract translation: 提供一种压电薄膜，其具有混合菱方结构和四边形结构的压电性，以及使用压电薄膜的压电元件。 压电薄膜包括钙钛矿型金属氧化物，其中钙钛矿型金属氧化物是至少具有菱方结构和四方结构的混晶系，以及a轴晶格参数与c轴晶格之比 四方结构的参数满足1.15 = c / a = 1.30。 压电元件包括​​在基板上：上述压电薄膜; 以及设置成与压电薄膜接触的一对电极。

公开(公告)号：WO2011108732A4

公开(公告)日：2011-09-09

申请号：PCT/JP2011/055153

申请日：2011-02-28

Applicant: CANON KABUSHIKI KAISHA ,  KYOTO UNIVERSITY ,  KUBOTA, Makoto ,  TAKEDA, Kenichi ,  HAYASHI, Jumpei ,  SHIMADA, Mikio ,  SHIMAKAWA, Yuichi ,  AZUMA, Masaki ,  NAKAMURA, Yoshitaka ,  KAWAI, Masanori

Inventor： KUBOTA, Makoto ,  TAKEDA, Kenichi ,  HAYASHI, Jumpei ,  SHIMADA, Mikio ,  SHIMAKAWA, Yuichi ,  AZUMA, Masaki ,  NAKAMURA, Yoshitaka ,  KAWAI, Masanori

IPC: H01L41/18 ,  H01L41/22 ,  H01L41/09 ,  B41J2/14

Abstract: Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15≤c/a≤1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.